• 제목/요약/키워드: electron transport layer

검색결과 273건 처리시간 0.033초

PECCP LB 박막을 이용한 유기 발광 타이모드의 제작과 이의 특성 (Fabrication and Properties of OLEDs using PECCP Langmuir-Blodgett(LB) Films)

  • Lee, Ho-Sik;Lee, Won-Jae;Park, Myung-Gyu;Songe, Min-Jeng;Park, Jong-Wook
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 하계학술대회 논문집
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    • pp.831-834
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    • 2000
  • Characteristics of organic light-emitting diodes(OLEDs) were studied with devices made by PECCP[poly(3,6-N-2-ethylhexyl carbazolyl cyanoterephthalidene)] Langmuir-Blodget(LB) films. The emissive organic material was synthesized and named PECCP, which has a strong electron donor group and an electron accepter group in main chain repeated unit. The LB technique was employed to investigate the identification of the recombination zone in the ITO/PECCP LB films/Alq$_3$/Al structure by varying the LB film thickness. PECCP was considered as an emissive layer and Alq$_3$was used as an electron-transport layer. We measured current-voltage(I-V) characteristics, UV/visible absorption, PL spectrum, and EL spectrum of those devises.

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ITO/Buffer layer/TPD/$Alq_3$/Al 구조의 유기 발광 소자에서 온도 변화에 따른 전기적 특성 연구 (Temperature-dependent Electrical Properties in organic light-emitting diodes of ITO/Buffer layer/TPD/$Alq_3$/Al structure)

  • 정동회;김상걸;오현석;홍진웅;이준웅;김태완
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 추계학술대회 논문집 Vol.15
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    • pp.534-537
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    • 2002
  • We have studied conduction mechanism that is interpreted in terms of space charge limited current (SCLC) region and tunneling region. The OLEDs are based on the molecular compounds, N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (TPD) as a hole transport, tris (8- hydroxyquinolinoline) aluminum(III) $(Alq_3)$ as an electron injection and transport and emitting later, copper phthalocyanine (CuPc) and poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) and poly(vinylcarbazole) (PVK) as a buffer layer respectively. Al was used as cathode. We manufactured reference structure that has in ITO/TPD/$Alq_3$/Al. Buffer layer effects were compared to reference structure. And we have analyzed out luminance efficiency-voltage characteristics in ITO/Buffer layer/TPD/$Alq_3$/Al with buffer-layer materials.

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왕벚나무 화외밀선의 당액 분비에 관한 미세구조적 연구 (Ultrasturctural Study on Nectar Secretion from Extrafloral Nectary of Prunus yedoensis Matsumura)

  • 정병갑
    • Journal of Plant Biology
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    • 제35권2호
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    • pp.143-153
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    • 1992
  • 한국산 왕벚나무(Prunus yedoensis Matsumura) 화외밀선의 미세구조 및 당액 분비기작을 규명하기 위하여 광학현미경, 주사형 및 투과형 전자현미경을 이용하여 관찰하였다. 밀선은 secretory layer와 subsecretory layer로 구성되어 있었으며 엽병의 유관속은 subsecretory layer에 있는 유관속과 연결되어 있었다. Secretory cell에서는 cristae가 잘 발달되지 않은 다수의 mitochonidria가 관찰되었으나 소포체는 소수 나타났고 골지체가 전혀 관찰되지 않았다. 색소체는 thylakoid가 거의 발달되지 않았으며, 소수가 관찰되었고 $0.2-0.3\;\mu\textrm{m}$ 크기의 소포를 특징적으로 갖고 있었다. subsecretory cell에서는 원형질 연락사가 잘 발달해 있었고 다수의 Calcium oxalate 결정이 관찰되었는데 이는 당투과에 간접적으로 관여하는 것 같다. 당액 전구물질은 사부에서 subsecretory layer를 거쳐 secretory layer까지 이동하는 것을 원형질 연락사를 통한 symplastic transport에 의하여 일어나는 것으로 생각되며 secretory layer에서 당액으로 재합성되어 외부로 배출되는 것 같다. Secertory cell의 맨 바깥쪽 세포벽은 cuticle 에 의하여 덮여 있었으며 secretory cell에서 당액은 원형질막, 세포벽, cuticle을 차례로 통과하는 누출상 분비(eccrine secretion)에 의하여 분비되는 것으로 사료된다.

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InP 식각정지층을 갖는 InAlAs/InGaAs/GaAs MHEMT 소자의 항복 전압 개선에 관한 연구 (Simulation Study on the Breakdown Enhancement for InAlAs/InGaAs/GaAs MHEMTs with an InP-Etchstop Layer)

  • 손명식
    • 반도체디스플레이기술학회지
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    • 제12권3호
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    • pp.23-27
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    • 2013
  • This paper is for enhancing the breakdown voltage of MHEMTs with an InP-etchstop layer. Gate-recess structures has been simulated and analyzed for the breakdown of the devices with the InP-etchstop layer. The fully removed recess structure in the drain side of MHEMT shows that the breakdown voltage enhances from 2V to almost 4V and that the saturation current at gate voltage of 0V is reduced from 90mA to 60mA at drain voltage of 2V. This is because the electron-captured negatively fixed charges at the drain-side interface between the InAlAs barrier layer and the $Si_3N_4$ passivation layer deplete the InGaAs channel layer more and thus decreases the electron current passing the channel layer. In the paper, the fully-recessed asymmetric gate-recess structure at the drain side shows the on-breakdown voltage enhancement from 2V to 4V in the MHEMTs.

Performances and Electrical Properties of Vertically Aligned Nanorod Perovskite Solar Cell

  • Kwon, Hyeok-Chan;Kim, Areum;Lee, Hongseuk;Lee, Eunsong;Ma, Sunihl;Lee, Yung;Moon, Jooho
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.429-429
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    • 2016
  • Organolead halide perovskite have attracted much attention over the past three years as the third generation photovoltaic due to simple fabrication process via solution process and their great photovoltaic properties. Many structures such as mesoporous scaffold, planar heterojunction or 1-D TiO2 or ZnO nanorod array structures have been studied to enhance performances. And the photovoltaic performances and carrier transport properties were studied depending on the cell structures and shape of perovskite film. For example, the perovskite cell based on TiO2/ZnO nanorod electron transport materials showed higher electron mobility than the mesoporous structured semiconductor layer due to 1-D direct pathway for electron transport. However, the reason for enhanced performance was not fully understood whether either the shape of perovskite or the structure of TiO2/ZnO nanorod scaffold play a dominant role. In this regard, for a clear understanding of the shape/structure of perovskite layer, we applied anodized aluminum oxide material which is good candidate as the inactive scaffold that does not influence the charge transport. We fabricated vertical one dimensional (1-D) nanostructured methylammonium lead mixed halide perovskite (CH3NH3PbI3-xClx) solar cell by infiltrating perovskite in the pore of anodized aluminum oxide (AAO). AAO template, one of the common nanostructured materials with one dimensional pore and controllable pore diameters, was successfully fabricated by anodizing and widening of the thermally evaporated Al film on the compact TiO2 layer. Using AAO as a scaffold for perovskite, we obtained 1-D shaped perovskite absorber, and over 15% photo conversion efficiency was obtained. I-V measurement, photoluminescence, impedance, and time-limited current collection were performed to determine vertically arrayed 1-D perovskite solar cells shaped in comparison with planar heterojunction and mesoporous alumina structured solar cells. Our findings lead to reveal the influence of the shape of perovskite layer on photoelectrical properties.

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P-I-N 역구조 페로브스카이트 태양전지 응용을 위한 Nickel oxide 홀전달층의 열처리 온도 연구 (Annealing Temperature of Nickel Oxide Hole Transport Layer for p-i-n Inverted Perovskite Solar Cells)

  • 김기성;김미정;김효정;양정엽
    • Current Photovoltaic Research
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    • 제11권4호
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    • pp.103-107
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    • 2023
  • A Nickel oxide (NiOx) thin films were prepared via sol-gel process on a transparent conductive oxide glass substrate. The NiOx thin films were spin-coated in ambient air and subsequently annealed for 30 minutes at temperatures ranging from 150℃ to 450℃. The structural and optical characteristics of the NiOx thin films annealed at various temperatures were measured using X-ray diffraction, field emission scanning electron microscopy, and ultraviolet-visible spectroscopy. After optimizing the NiOx coating conditions, perovskite solar cells were fabricated with p-i-n inverted structure, and its photovoltaic performance was evaluated. NiOx thin films annealed at 350℃ exhibited the most favorable characteristics as a hole transport layer, resulting in the highest power conversion efficiency of 17.88 % when fabricating inverted perovskite solar cells using this film.

P3HT:PCBM-based on Polymer Photovoltaic Cells with PEDOT:PSS-pentacene as a Hole Conducting Layer

  • Kim, Hyun-Soo;Hwang, Jong-Won;Park, Su-Jin;Chae, Hyun-Hee;Choe, Young-Son
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.313-313
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    • 2010
  • The performance of polymer photovoltaic cells based on blends of poly(3-hexylyhiophene) (P3HT) and phenyl-C61-butyric acid methyl ester (PCBM) is strongly influenced by blend composition and thickness. Polymer photovoltaic cells based on bulk-heterojunction have been fabricated with a structure of ITO/poly(3, 4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS)-pentacene/poly (3-hexylthiophene) (P3HT):phenyl-C61-butyric acid methyl ester (PCBM)/Al. We have prepared PEDOT:PSS by dissolving pentacene in N-methylpyrrolidine (NMP) and mixing with PEDOT:PSS. Pentacene was added a maximum concentration of approximately 5.5mg to the PEDOT:PSS solution and sonicated for 10 min. Active layer (P3HT:PCBM) (1:1) was strongly influenced by PEDOT:PSS-pentacene. We have investigated the performance of photovoltaic device with different concentration of P3HT:PCBM (1:1) 2.0wt%, 2.2wt%, 2.4wt% and 2.6wt%, respectively. The photocurrent and power conversion efficiency (PCE) showed a maximum between 2.0wt% and 2.2wt% concentration of P3HT:PCBM. This implied that both morphology and electron transport properties of the layer influenced the performance of the present photovoltaic cells. As the concentration of P3HT:PCBM blends as an active layer was increased, the power conversion efficiency was decreased. P3HT:PCBM layer and PEDOT:PSS-pentacene layer were characterized by work function, UV-visible absorption, atomic force microscopy (AFM), X-ray diffraction (XRD) and scanning electron microscope (SEM).

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Fabrication of $TiO_2$ Blocking Layers for CuSCN Based Dye-Sensitized Solar Cells by Atomic Layer Deposition Method

  • 백장미;성명모
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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    • pp.310.2-310.2
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    • 2013
  • For enhancement of dye-sensitized solar cell performance, TiO2 blocking layer has been used to prevent recombination between electron and hole at the conducting oxide and electrolyte interface. In solid state dye-sensitized solar cells, it is necessary to fabricate pin-hole free TiO2 blocking layer. In this work, we deposited the TiO2 blocking layer on conducting oxide by atomic layer deposition and compared the efficiency. To compare the efficiency, we fabricate solid state dye-sensitized solar cell with using CuSCN as hole transport material. We see the efficiency improve with 40nm TiO2 blocking layer and the TiO2 blocking layer morphology was characterized by SEM. Also, we used this blocking layer in TiO2/Sb2S3/ CuSCN solar cell.

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Blue-green Electroluminescence from Aluminum and ${\alpha}$-pyridoin Complex

  • Kim, Won-Sam;Lee, Burm-Jong;Tuong, Nguyen Manh;Son, Eun-Mi;Yang, Ki-Sung;Kwon, Young-Soo
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2004년도 Asia Display / IMID 04
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    • pp.605-608
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    • 2004
  • A novel blue-green emitting aluminum complex was developed by employing 8-hydroxyquinoline as co-ligand for enhancement of electron transport and light emission abilities so that the electroluminescent (EL) devices do not need additional electron transport layer. The aluminum complex (PAlQ) of 8-hydroxyquinoline and ${\alpha}$-pyridoin was synthesized The structure of the PAlQ was elucidated by FT-IR, UV-Vis and XPS. The PAlQ complex showed thermal stability up to 350$^{\circ}C$ under nitrogen flow by TGA. The photoluminescence (PL) was measured from solid film of the PAlQ complex on quartz substrate. The EL device was fabricated by the vacuum deposition. The device having the structure of ITO/TPD/PAlQ/Al was studied, where N,N-bis(3-methylphenyl}-N,N'-diphenyl-benzidine (TPD) was used as a hole transporting layer. The EL device emitted a blue-green light.

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