• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.2
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• pp.169-174
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• 2001

The electron transport coefficients(the electron drift velocity, W, and the longitudinal and transverse diffusion coefficient, D$_{L}$ and D$_{T}$) in SiH$_4$-Ar mixtures containing 0.5% and 5.0% monosilane were calculated over the E/N range from 0.01 to 300 Td and over the gas pressure range 0.5, 1.0 and 1.5 Torr by the time-of-flight(TOF) method of the Boltzmann equation(BE.) and Monte-Carlo simulation(MCS). The electron energy distribution function in each SiH$_4$-Ar mixtures at E/N=10 Td and L=0.2 cm, which in equilibrium region in the mean electron enregy were compared.red.

• Proceedings of the KIEE Conference
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• 2001.07e
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• pp.72-75
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• 2001

In this paper, we describe the results of a combined experimental theoretical study designed to understand and predict the dielectric properties of $SF_6$ and $SF_6+Ar$ mixtures. The electron transport, ionization, and attachment coefficients for pure $SF_6$ and gas mixtures containing $SF_6$ has been analysed over the E/N range $30{\sim}300Td$ by a two term Boltzrnann equation and by a Monte Carlo Simulation using a set of electron cross sections determined by other authors, experimentally the electron swarm parameters for 0.2% and 0.5% $SF_6+Ar$ mixtures were measured by time- of- flight method, The results show that the deduced electron drift velocities, the electron ionization or attachment coefficients, longitudinal and transverse diffusion coefficients and mean energy agree reasonably well with the experimental and theoretical for a rang of E/N values.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.696-699
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• 1999

The electron transport coefficients in $SF_6+N_2$ gas is analysed in range of E/N values from 100~900(Td) by a Monte Carlo simulation and Boltzmann method, using a set of electron collision cross sections determined by the authors. The result of the Monte Carlo simulation such as electron drift velocity, ionization and electron attachment coefficients, longitudinal and transverse diffusion coefficients in nearly agreement with the respective experimental and theoretical for a range of E/N.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.9
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• pp.853-858
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• 2008

The structure of organic light-emitting diodes(OLEDs) with typical heterostructure consists of anode, hole injection layer, hole transport layer, light-emitting layer, electron transport layer, electron injection layer, and cathode. 4,4bis[N-(1-napthyl)-N-phenyl-amino]-biphenyl(NPB) used as a hole transport layer and 4'4-bis(2,2'-diphenyl vinyl)-1,1'-biphenyl(DPVBi) used as a blue light emitting layer were graded-mixed at selected ratio. Interface at heterojunction between the hole transport layer and the elecrtron transport layer restricts carrier's transfer. Mixing of the hole transport layer and the emitting layer reduces abrupt interface between the hole transport layer and the electron transport layer. The operating voltage of OLED devices with graded mixed-layer structure is 2.8 V at 1 $cd/m^2$ which is significantly lower than that of OLED device with typical heterostructure. The luminance of OLED devices with graded mixed-layer structure is 21,000 $cd/m^2$ , which is much higher than that of OLED device with typical heterostructure. This indicates that the graded mixed-layer enhances the movement of carriers by reducing the discontinuity of highest occupied molecular orbital(HOMO) of the interface between hole transport layer and emitting layer.

• Journal of Adhesion and Interface
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• v.23 no.2
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• pp.17-24
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• 2022

Colloidal quantum dots (QDs) have gained attention for applications in quantum dot light emitting diodes (QLEDs) due to their high photoluminescence quantum yield, narrow emission spectra, and tunable bandgap. Nevertheless, non-radiative recombination induced by electron and hole imbalance deteriorates the device efficiency and stability. To overcome the problem, researchers have been trying to enhance hole transport properties of hole transporting layers (HTL) and/or slow down the electron injection in electron transport layer (ETL). Here, we summarize two approaches: i) development of interfacial materials between QD and ETL (or HTL); ii) engineering of HTL by blending or multi-layer approaches.

• Nuclear Engineering and Technology
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• v.49 no.6
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• pp.1114-1124
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• 2017

Acceleration/preconditioning strategies available in the SCEPTRE radiation transport code are described. A flexible transport synthetic acceleration (TSA) algorithm that uses a low-order discrete-ordinates ($S_N$) or spherical-harmonics ($P_N$) solve to accelerate convergence of a high-order $S_N$ source-iteration (SI) solve is described. Convergence of the low-order solves can be further accelerated by applying off-the-shelf incomplete-factorization or algebraic-multigrid methods. Also available is an algorithm that uses a generalized minimum residual (GMRES) iterative method rather than SI for convergence, using a parallel sweep-based solver to build up a Krylov subspace. TSA has been applied as a preconditioner to accelerate the convergence of the GMRES iterations. The methods are applied to several problems involving electron transport and problems with artificial cross sections with large scattering ratios. These methods were compared and evaluated by considering material discontinuities and scattering anisotropy. Observed accelerations obtained are highly problem dependent, but speedup factors around 10 have been observed in typical applications.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.404-404
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• 2010

Despite much works have been done on the geometric structures of ripples, defects and edge atoms in a graphene device, there has been no report showing the direct correlation between the structures and the transport property. Unlike scanning tunneling microscopy or other electron microscopes, Scanning Gate Microscope (SGM) is a unique microscopic tool with which the local electronic structure and the transport property of a device can be measured simultaneously. We have performed a transport measurement in nanometer scale using a scanning gate microscope (SGM). We have found the nanoscopic pictures of electron and hole puddles and the role of graphene- device edges in the transport measurements. These experimental findings were successfully explained with a theoretical model.

• Journal of Plant Biology
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• v.34 no.3
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• pp.215-221
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• 1991

Photoxynthetic properties of polyvinylalcohol (PVA)-immobilized chloroplast especially regarded to stability of photosynthetic electron transport and the fluorescence induction pattern were studied. When isolated spinach chloroplasts were immobilized with PVA, it showed good preservation of photosynthetic electron transport activity, especially PS II activity, during storage at -15$^{\circ}C$, 4$^{\circ}C$ and 2$0^{\circ}C$. And immobilized chloroplasts revealed similar thermostability of whole chain electron transport to free chloroplsts. And the absorption peak of red band of chloroplasts showed the blue-shift of 2-4 nm after immobilization. Fv/Fm ratio of chlorophyll fluorescence slightly decreased after immobilization. White light pulse after continuous light do not induced the additional fluorescence rise. This means chlorophyll fluorescence at room temperature reached to Fmax under continuous light in the immobilized chloroplasts. It seems that PVA may be a good candidate for immobilization matrix for the preservation of photosynthetic function of thylakoids and for the continuous use of chloroplast membranes of higher plants for solar energy storage and conversion.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.513-516
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• 2008

The luminance efficiency of the red organic light-emitting devices fabricated utilizing a double electron transport layer (ETL) consisting of an Al-doped and an undoped layer was investigated. The Al atoms existing in the ETL acted as hole blocking sites, resulting in an increase in the luminance efficiency.

• Progress in Superconductivity and Cryogenics
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• v.15 no.1
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• pp.6-10
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• 2013

We investigate the electrical and thermal transport properties of a sesquicarbide superconductor $La_2C_3$, including electrical resistivity, thermoelectric power, and thermal conductivity. The electrical resistivity exhibits a typical metallic character with a saturation behavior at high temperatures. The thermoelectric power shows a metallic behavior with pronounced phonon-drag effect, comparable with pure metals. The broad peak of the thermal conductivity is observed in the superconducting state, which is rapidly suppressed by magnetic fields. These observations suggest that the electron-phonon scattering is significant in $La_2C_3$, which is relevant with the relatively high-$T_c$ in $La_2C_3$ through strong electron-phonon coupling with low frequency phonon modes.