The aggressive scaling of dynamic random-access memory capacitors has increased the need to maintain high capacitance despite the limited physical thickness of electrodes and dielectrics. This makes it essential to use high-k dielectric materials. TiO2 has a large dielectric constant, ranging from 30~75 in the anatase phase to 90~170 in rutile phase. However, it has significant leakage current due to low energy barriers for electron conduction, which is a critical drawback. Suppressing the leakage current while scaling to achieve an equivalent oxide thickness (EOT) below 0.5 nm is necessary to control the influence of interlayers on capacitor performance. For this, Pt and Ru, with their high work function, can be used instead of a conventional TiN substrate to increase the Schottky barrier height. Additionally, forming rutile-TiO2 on RuO2 with excellent lattice compatibility by epitaxial growth can minimize leakage current. Furthermore, plasma-enhanced atomic layer deposition (PEALD) can be used to deposit a uniform thin film with high density and low defects at low temperatures, to reduce the impact of interfacial reactions on electrical properties at high temperatures. In this study, TiO2 was deposited using PEALD, using substrates of Pt and Ru treated with rapid thermal annealing at 500 and 600 ℃, to compare structural, chemical, and electrical characteristics with reference to a TiN substrate. As a result, leakage current was suppressed to around 10-6 A/cm2 at 1 V, and an EOT at the 0.5 nm level was achieved.
Journal of the Korea Institute of Building Construction
/
v.24
no.3
/
pp.285-295
/
2024
This study investigated the impact of accelerated carbonation on Ordinary Portland Cement(OPC) paste that had undergone steam curing at 500℃·hr. Two carbonation environments were examined: atmospheric carbonation(1atm, 20% CO2) and pressurized carbonation(5atm, 99% CO2). Chemical analysis using X-ray diffraction(XRD) and Fourier-Transform Infrared spectroscopy(FT-IR) were conducted, along with physical characterization via scanning electron microscopy(SEM) and compressive strength testing. Results indicated that atmospheric carbonation with 20% CO2 concentration significantly densified the internal microstructure of the OPC paste, leading to enhanced compressive strength. Conversely, pressurized carbonation at 5atm with 99% CO2 concentration resulted in rapid densification of the surface structure, which hindered CO2 diffusion into the sample. This limited the extent of carbonation and prevented the improvement of physical properties.
Journal of Korean Society of Environmental Engineers
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v.29
no.6
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pp.654-661
/
2007
The goal of this research was to identify the impact of silicate polymerization on the formation of insoluble aluminiumsilicate salts which could be a cause of irreversible fouling in the membrane process by lab-scale test. For this, the amount and characteristics of precipitates that were formed in six samples with different Al and Si concentration were analyzed. And the particles was also observed by SEM-EDS(Scanning Electron Microscope - Electron Dispersion Spectrophotometer) to compare morphology and ratio of Al and Si in each precipitates. Finally the reactive and nonreactive silicate contents in the solution and precipitates were analyzed to calculate silicate form content in each fraction. The amount of precipitates was in proportion to the total concentration of both element in solution. And the amount of insoluble particle that was not dissolved in the acid solution was recorded the highest in the sample 2 of which Si concentration was lower than the saturation concentration, 50 mg/L. The content of reactive silicate in precipitates was also recorded the highest value in sample 2 of which almost silicate form was reactive. When the silicate concentration is same, that value was recorded the highest in the sample with highest Al concentration. The SEM morphology of the precipitates was similar to that of Aluminiumhydroxide and the insoluble precipitates was not dissolved in acidic solution with pH 2.7 was able to observed only in sample 2. The ratio of Al and Si in the precipitates was ranged $0.48\sim3.14$, thai of sample 2 was recorded the highest value, 3.14. It is concluded that the insoluble aluminiumsilicate could be easily formed in the solution of which silicate exist as a reactive form and coexisting Al is sufficient.
Material Life Cycle Assessment (MLCA) was performed to analyze the environmental impact characteristics of the Mg2NiHx-5 wt% CaO hydrogen storage composites' manufacturing process. The MLCA was carried out by Gabi software. It was based on Eco-Indicator 99' (EI99) and CML 2001 methodology. The Mg2NiHx-5 wt% CaO composites were synthesized by Hydrogen Induced Mechanical Alloying (HIMA). The metallurgical, thermochemical characteristics of the composites were analyzed by using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), specific surface area analysis (Bruner-Emmett-Teller, BET), and thermogravimetric analysis (TGA). As a result of the CML 2001 methodology, the environmental impact was 78% for Global Warming Potential (GWP) and 22% for Eutrophication Potential (ETP). In addition, as a result of applying the EI 99' methodology, the acidification was the highest at 43%, and the ecotoxicity was 31%. Accordingly, the amount of electricity used in the manufacturing process may have an absolute effect on environmental pollution. Also, it is judged that the leading cause of Mg2NiHx-5 wt% CaO is the addition of CaO. Ultimately, it is necessary to research environmental factors by optimizing the process, shortening the manufacturing process time, and exploring eco-friendly alternative materials.
Journal of the Korea Academia-Industrial cooperation Society
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v.16
no.4
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pp.2951-2957
/
2015
The development of worldwide harmful algal blooms(HAB) is a serious problem for public health and fisheries industries. To evaluate the algicidal impact on the HAB species, algicide thiazolidinedione derivative (TD49) and yellow clay were examined, which is focus on assess the algicidal effects and inhibition to photosynthesis of HAB species. To obtain the detailed information, we analyzed the viability of target species related to activity Chl. a, photosynthetic efficiency($F_v/F_m$), and electron transport rate(ETR). Culture experiment was conducted to evaluate the algicidal effects of three harmful species(raphidophyceae Heterosigma akashiwo, Chattonella marina, and dinophyceae Heterocapsa circularisquama) and one non-harmful species (cryptophyceae Rhodomonas salina). Our experiments revealed that three HAB species were easily destroyed of the cell walls after TD49 dosing. Also, they had significantly reducing values of active Chl. a, $F_v/F_m$, and ETR, due to the damage of photosystem II by inter-cellular disturbance. As a result, the algicidal effect(%) for the three HABs were as follows, in the order of greatest to the least: H. circularisquama> C. marina> H. akashiwo. However, the algicidal effect for yellow clay remained to be <30% (p>0.01), implying that it may not have damaged the photosystem II. On the other hand, non-HAB R. salina was promoted at both TD49 and yellow clay treatments. Our results demonstrated that the TD49 is a good agent for the control of HABs H. akashiwo, C. marina, and H. circularisquama, whereas the yellow clay would not be suitable for the field application based on our experimental results.
Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
/
2009.11a
/
pp.55-55
/
2009
Silicon Carbide (SiC) is a material with a wide bandgap (3.26eV), a high critical electric field (~2.3MV/cm), a and a high bulk electron mobility (${\sim}900cm^2/Vs$). These electronic properties allow high breakdown voltage, high frequency, and high temperature operation compared to Silicon devices. Although various SiC DMOSFET structures have been reported so far for optimizing performances. the effect of channel dimension on the switching performance of SiC DMOSFETs has not been extensively examined. In this paper, we report the effect of the interface states ($Q_s$) on the transient characteristics of SiC DMOSFETs. The key design parameters for SiC DMOSFETs have been optimized and a physics-based two-dimensional (2-D) mixed device and circuit simulator by Silvaco Inc. has been used to understand the relationship with the switching characteristics. To investigate transient characteristic of the device, mixed-mode simulation has been performed, where the solution of the basic transport equations for the 2-D device structures is directly embedded into the solution procedure for the circuit equations. The result is a low-loss transient characteristic at low $Q_s$. Based on the simulation results, the DMOSFETs exhibit the turn-on time of 10ns at short channel and 9ns at without the interface charges. By reducing $SiO_2/SiC$ interface charge, power losses and switching time also decreases, primarily due to the lowered channel mobilities. As high density interface states can result in increased carrier trapping, or recombination centers or scattering sites. Therefore, the quality of $SiO_2/SiC$ interfaces is important for both static and transient properties of SiC MOSFET devices.
Proceedings of the Korean Vacuum Society Conference
/
2016.02a
/
pp.77-77
/
2016
Thin films synthesized by plasma processes have been widely applied in a variety of industrial sectors. The structure control of thin film is one of prime factor in most of these applications. It is well known that the structure of this film is closely associated with plasma parameters and species of plasma which are electrons, ions, radical and neutrals in plasma processes. However the precise control of structure by plasma process is still limited due to inherent complexity, reproducibility and control problems in practical implementation of plasma processing. Therefore the study on the fundamental physical properties that govern the plasmas becomes more crucial for molecular scale control of film structure and corresponding properties for new generation nano scale film materials development and application. The thin films are formed through nucleation and growth stages during thin film depostion. Such stages involve adsorption, surface diffusion, chemical binding and other atomic processes at surfaces. This requires identification, determination and quantification of the surface activity of the species in the plasma. Specifically, the ions and neutrals have kinetic energies ranging from ~ thermal up to tens of eV, which are generated by electron impact of the polyatomic precursor, gas phase reaction, and interactions with the substrate and reactor walls. The present work highlights these aspects for the controlled and low-temperature plasma enhanced chemical vapour disposition (PECVD) of Si-based films like crystalline Si (c-Si), Si-quantum dot, and sputtered crystalline C by the design and control of radicals, plasmas and the deposition energy. Additionally, there is growing demand on the low-temperature deposition process with low hydrogen content by PECVD. The deposition temperature can be reduced significantly by utilizing alternative plasma concepts to lower the reaction activation energy. Evolution in this area continues and has recently produced solutions by increasing the plasma excitation frequency from radio frequency to ultra high frequency (UHF) and in the range of microwave. In this sense, the necessity of dedicated experimental studies, diagnostics and computer modelling of process plasmas to quantify the effect of the unique chemistry and structure of the growing film by radical and plasma control is realized. Different low-temperature PECVD processes using RF, UHF, and RF/UHF hybrid plasmas along with magnetron sputtering plasmas are investigated using numerous diagnostics and film analysis tools. The broad outlook of this work also outlines some of the 'Grand Scientific Challenges' to which significant contributions from plasma nanoscience-related research can be foreseen.
Baek, Ji Hyun;Lee, Dong Geon;Jin, Young Un;Han, Man Hyung;Kim, Won Bin;Cho, In Sun;Jung, Hyun Suk
Proceedings of the Korean Vacuum Society Conference
/
2016.02a
/
pp.417-417
/
2016
Global environmental deterioration has become more serious year by year and thus scientific interests in the renewable energy as environmental technology and replacement of fossil fuels have grown exponentially. Photoelectrochemical (PEC) cell consisting of semiconductor photoelectrodes that can harvest light and use this energy directly to split water, also known as photoelectrolysis or solar water splitting, is a promising renewable energy technology to produce hydrogen for uses in the future hydrogen economy. A major advantage of PEC systems is that they involve relatively simple processes steps as compared to many other H2 production systems. Until now, a number of materials including TiO2, WO3, Fe2O3, and BiVO4 were exploited as the photoelectrode. However, the PEC performance of these single absorber materials is limited due to their large charge recombinations in bulk, interface and surface, leading low charge separation/transport efficiencies. Recently, coupling of two materials, e.g., BiVO4/WO3, Fe2O3/WO3 and CuWO4/WO3, to form a type II heterojunction has been demonstrated to be a viable means to improve the PEC performance by enhancing the charge separation and transport efficiencies. In this study, we have prepared a triple-layer heterojunction BiVO4/WO3/SnO2 photoelectrode that shows a comparable PEC performance with previously reported best-performing nanostructured BiVO4/WO3 heterojunction photoelectrode via a facile solution method. Interestingly, we found that the incorporation of SnO2 nanoparticles layer in between WO3 and FTO largely promotes electron transport and thus minimizes interfacial recombination. The impact of the SnO2 interfacial layer was investigated in detail by TEM, hall measurement and electrochemical impedance spectroscopy (EIS) techniques. In addition, our planar-structured triple-layer photoelectrode shows a relatively high transmittance due to its low thickness (~300 nm), which benefits to couple with a solar cell to form a tandem PEC device. The overall PEC performance, especially the photocurrent onset potential (Vonset), were further improved by a reactive-ion etching (RIE) surface etching and electrocatalyst (CoOx) deposition.
In an attempt to quantitate and qualitate residual antibiotics and antibacterial agents in meat simultaneously, we studied a gas chromatography-mass spectrometry(GC/M8) analysis. For a simultaneous analysis of penicillin G, chloramphenicol and thiamphenicol in meat, a simple and rapid clean-up procedure including extraction with 0.01 M EDTA-2Na Mcilvaine buffer (pH 4.0), defatting with n-hexane, and elution with 0.01M-methanolic oxalic acid from Bond Elute $C_{18}$ cartridge, and quantitation by selected ion monitoring (SIM) mode after derivatization was performed. The recoveries (%) of penicillin G, chloramphenicol and thiamphenicol (CV, %) at 1 ppm fortification level were 63.5 (7.6), 76.3 (8.1) and 84.7 (2.0), and the detection limits of those were 0.6, 0.085 and $0.084\;\mu\textrm{g}$ beef, respectively. This method using 81M mode allows excellent detection and quantitation of residual antibiotics and antibacterial agents in meat. Moreover, confirmation by a full scan electron impact mass spectrum is possible if residual level in the sample in above 1 ppm.
The impact of effective parameters on the electrodeposition rate optimization of Au-Cu alloy at high thicknesses on the silver substrate was investigated in the present study. After ensuring the formation of gold alloy deposits with the desired and standard percentage of gold with the cartage of 18K and other standard karats that should be observed in the manufacturing of the gold and jewelry artifacts, comparing the rate of gold-copper deposition by direct and pulsed current was done. The rate of deposition with pulse current was significantly higher than direct current. In this process, the duty cycle parameter was effectively optimized by the "one factor at a time" method to achieve maximum deposition rate. Particular parameters in this work were direct and pulse current densities, bath temperature, concentration of gold and cyanide ions in electrolyte, pH, agitation and wetting agent additive. Scanning electron microscopy (SEM) and surface chemical analysis system (EDS) were used to study the effect of deposition on the cross-sections of the formed layers. The results revealed that the Au-Cu alloy layer formed with concentrations of 6gr·L-1 Au, 55gr·L-1 Cu, 24 gr·L-1 KCN and 1 ml·L-1 Lauryl dimethyl amine oxide (LDAO) in the 0.6 mA·cm-2 average current density and 30% duty cycle, had 0.841 ㎛·min-1 Which was the highest deposition rate. The use of electrodeposition of pure and alloy gold thick layers as a production method can reduce the use of gold metal in the production of hallow gold artifacts, create sophisticated and unique models, and diversify production by maintaining standard karats, hardness, thickness and mechanical strength. This will not only make the process economical, it will also provide significant added value to the gold artifacts. By pulsating of currents and increasing the duty cycle means reducing the pulse off-time, and if the pulse off-time becomes too short, the electric double layer would not have sufficient growth time, and its thickness decreases. These results show the effect of pulsed current on increasing the electrodeposition rate of Au-Cu alloy confirming the previous studies on the effect of pulsed current on increasing the deposition rate of Au-Cu alloy.
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