• 한국식품영양학회지
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• 제27권4호
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• pp.558-569
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• 2014

The quality and characteristics of purple sweet potato sponge cake were studied with the addition of different proportions of purple sweet potato powder depending on storage period The pHs, heights, and weights of doughs were in the ranges of 6.3~6.5, 4.8~4.4 cm and 397~418 g, respectively. The sponge cake groups with the addition of different proportions of purple sweet potato powder showed significantly different characteristics in hardness, adhesiveness, cohesiveness, gumminess, and chewiness, according to texture profile analysis. The difference in colors of sponge cakes with addition with purple sweet potato revealed that L-value and b-value were significantly reduced but a-value especially increased according to the density. Using scanning electron microscopy (SEM), it was confirmed that the stoma size of purple sweet potato sponge cake become smaller and the stoma wall became thicker in proportion to the contents of purple sweet potato powder, which could result in an increased level of water content after a long period pf storage. According with the observations, water content remarkably increased after 4~6 days of storage and the ability to keep water content seemed to contribute to extention the shef-life of sponge cakes. In sensory evaluation, sponge cakes with high contents of purple sweet potato were preferred and cakes with the addition of 25% and 30% purple sweet potato powder was most preferred. It was expected that the shelf-life of purple sweet potato sponge cake was 4 days under the normal temperature.

• 공업화학
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• 제8권2호
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• pp.197-203
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• 1997

본 연구에서는 폴리우레탄폼 제조시 사용되는 첨가제가 폴리우레탄폼의 기계적 물성에 미치는 영향에 대하여 조사하였다. 실험에 사용된 수지는 KONIX FA-703 폴리에테르폴리올(80%)과, KONIX FA-733 폴리에테르폴리올(20%)에 촉매, 계면활성제, 가교제 등을 혼합하여 제조하였으며, 이 수지에 이소시아네이트(TDI-80, prepolymer M-200, pure MDI)를 당량비로 첨가하여 발포시킨 폼을 상온에서 72시간 경화시킨 후 물성측정에 사용하였다. 폴리우레탄폼의 기계적 물성은 밀도, 인장강도, 인열강도, 신장율, 흡음율 및 gel profile을 조사함으로써 측정하였고, 셀 크기에 대한 계면활성제의 영향은 주사전자현미경(SEM)을 사용하여 측정하였다. 흡음율은 셀의 크기와 직접적인 관련이 있었으며, 계면활성제(L-5309)의 사용량에 따른 인장강도, 인열강도 및 흡음율 등 기계적 물성은 1.0pphp 까지는 첨가량이 많아질수록 증가하는 경향을 보이다가 점차 감소하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1998년도 제14회 학술발표회 논문개요집
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• pp.77-77
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• 1998

Present silicon dioxide (SiOz) 떠m as intennetal dielectridIMD) layers will result in high parasitic c capacitance and crosstalk interference in 비gh density devices. Low dielectric materials such as f f1uorina뼈 silicon oxide(SiOF) and f1uoropolymer IMD layers have been tried to s이ve this problem. I In the SiOF ftlm, as fluorine concentration increases the dielectric constant of t뼈 film decreases but i it becomes unstable and wa않r absorptivity increases. The dielectric constant above 3.0 is obtain어 i in these ftlms. Fluoropolymers such as polyte$\sigma$따luoroethylene(PTFE) are known as low dielectric c constant (>2.0) materials. However, their $\alpha$)Or thermal stability and low adhesive fa$\pi$e have h hindered 야1리ru뚱 as IMD ma따"ials. 1 The concept of a plasma processing a찌Jaratus with 비gh density plasma at low pressure has r received much attention for deposition because films made in these plasma reactors have many a advantages such as go여 film quality and gap filling profile. High ion flux with low ion energy in m the high density plasma make the low contamination and go어 $\sigma$'Oss피lked ftlm. Especially the h helicon plasma reactor have attractive features for ftlm deposition 야~au똥 of i앙 high density plasma p production compared with other conventional type plasma soun:es. I In this pa야Jr, we present the results on the low dielectric constant fluorocarbonated-SiOF film d밑JOsited on p-Si(loo) 5 inch silicon substrates with 00% of 0dFTES gas mixture and 20% of Ar g gas in a helicon plasma reactor. High density 띠asma is generated in the conventional helicon p plasma soun:e with Nagoya type ill antenna, 5-15 MHz and 1 kW RF power, 700 Gauss of m magnetic field, and 1.5 mTorr of pressure. The electron density and temperature of the 0dFTES d discharge are measUI벼 by Langmuir probe. The relative density of radicals are measured by optic허 e emission spe따'Oscopy(OES). Chemical bonding structure 3I피 atomic concentration 따'C characterized u using fourier transform infrared(FTIR) s야3띠"Oscopy and X -ray photonelectron spl:’따'Oscopy (XPS). D Dielectric constant is measured using a metal insulator semiconductor (MIS;AVO.4 $\mu$ m thick f fIlmlp-SD s$\sigma$ucture. A chemical stoichiome$\sigma$y of 야Ie fluorocarbina$textsc{k}$영-SiOF film 따~si야영 at room temperature, which t the flow rate of Oz and FTES gas is Isccm and 6sccm, res야~tvely, is form려 야Ie SiouFo.36Co.14. A d dielec$\sigma$ic constant of this fIlm is 2.8, but the s$\alpha$'!Cimen at annealed 5OOt: is obtain려 3.24, and the s stepcoverage in the 0.4 $\mu$ m and 0.5 $\mu$ m pattern 킹'C above 92% and 91% without void, res야~tively. res야~tively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
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• pp.7-11
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• 2002

In this study, Au thin films were etched with a $Cl_2/Ar$ gas combination in an in an inductively coupled plasma. The etch properties were measured for different gas mixing ratios of $Cl_2/(Cl_2+Ar)$ while the other process conditions were fixed at rf power (700 W), dc bias voltage (150 V), and chamber pressure (15 mTorr). The highest etch rate of the Au thin film was 3500 $\AA/min$ and the selectivity of Au to $SiO_2$ was 4.38 at a $Cl_2/(Cl_2+Ar)$ gas mixing ratio of 0.2. The surface reaction of the etched Au thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. There is Au-Cl bonding by chemical reaction between Cl and Au. During the etching of Au thin films in $Cl_2/Ar$ plasma, Au-Cl bond is formed, and these products can be removed by the physical bombardment of Ar ions. In addition, Optical emission spectroscopy (OES) were investigated to analyze radical density of Cl and Ar in plasma. The profile of etched Au investigated with scanning electron microscopy (SEM).

• 한국재료학회지
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• 제25권9호
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• pp.455-461
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• 2015

SnS-$TiO_2$ nanocomposites are synthesized using simple, cheap, and less toxic $SnCl_2$ as the tin (II) precursor. The prepared nanoparticles are characterized using powder X-ray diffraction (XRD), transmission electron microscopy (TEM), and UV-Vis diffuse reflectance spectra (DRS). The XRD and TEM results indicate that the prepared product has SnS nanoparticles and a grain diameter of 30 nm. The DRS demonstrate that SnS-$TiO_2$ possesses the absorption profile across the entire visible light region. The generation of reactive oxygen species is detected through the oxidation reaction from 1,5-diphenyl carbazide (DPCI) to 1,5-diphenyl carbazone (DPCO). It is found that the photocurrent density and photocatalytic effect increase with the modified SnS. Excellent catalytic degradation of Texbrite BA-L (TBA) solution is observed using the SnS-$TiO_2$ composites under visible light irradiation. It is proposed that both the strong visible light absorption and the multiple exciton excitations contribute to the high visible light photocatalytic activity.

• 한국대기환경학회지
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• 제13권5호
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• pp.345-353
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• 1997

The purpose of the study was to stastically classify individual PM-10 measured by SEM/EDX (scanning electron microscopy/energy dispersive x-ray analyzer). The SEM/EDX provided various physical parameters like optical diameter, as well as major 18 chemical information (Mg, Al, Si, P, S, Cl, K, Ca, Ti, V, Cr, Mn, Fe, Ni, Cu, Zn, Br, Pb) for a particle-by-particle basis. The total of 1,419 particles were analyzed for the study. Thus density and mass of each particle can be estimated based on its chemical composition. Further the study developed 4 semisource profiles including highway, oil boiler, incinerator, and soil emissions, where each sample was collected near the source in the ambient air The profiles developed were consisted of mass fractions and their uncertainties based on a particle class concept. To obtain mass fraction of each particle class, an agglomerative hierarchical cluster analysis was initially applied to create particle classes for each sample. Then uncertainties were calculated for each class based on the jacknife method. The 1,258 particles out of 1,419 (88.7%) were assorted in newly generated particle classes. The study provides opportunities to identify particle's source quantitatively and to develope various receptor models.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.292-292
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• 2014

Wide band gap semiconductors, such as III-nitrides (GaN, AlN, InN, and their alloys), SiC, and diamond are expected to play an important role in the next-generation electronic devices. Specifically, GaN-based high electron mobility transistors (HEMTs) have been targeted for high power, high frequency, and high temperature operation electronic devices for mobile communication systems, radars, and power electronics because of their high critical breakdown fields, high saturation velocities, and high thermal conductivities. For the stable operation, high power, high frequency and high breakdown voltage and high current density, the fabrication methods have to be optimized with considerable attention. In this study, low ohmic contact resistance and smooth surface morphology to AlGaN/GaN on 2 inch c-plane sapphire substrate has been obtained with stepwise annealing at three different temperatures. The metallization was performed under deposition of a composite metal layer of Ti/Al/Ni/Au with thickness. After multi-layer metal stacking, rapid thermal annealing (RTA) process was applied with stepwise annealing temperature program profile. As results, we obtained a minimum specific contact resistance of $1.6{\times}10^{-7}{\Omega}cm2$.

• 한국진공학회지
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• 제13권3호
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• pp.132-138
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• 2004

대기압의 공기 중에서 코로나 방전 플라스마에 대한 특성을 연구하기 위해 wire-cylinder 형태의 반응로에서 FCT(flux-corrected transport) 알고리즘과 FEM(finite element method) 방법을 적용한 자체 모순이 없는 1차원 수치적 모델을 사용하였다. 코로나 방전 반응로에 펄스 전압과 직류 전압을 인가하였을 때, 플라스마 밀도의 분포를 계산하여 전압의 변화에 따른 플라스마 특성의 변화를 연구하였으며, 또한 반응로의 크기 변화에 따른 플라스마의 특성 변화를 연구하였다. 이 결과로 얻어지는 활동 반경(active radius)의 변화를 Peek의 실험값과 비교해 보았다. 이와 같은 코로나 방전 플라스마에 대한 수치적 계산 결과는 방전 과정에서 일어나는 물리적 특성을 잘 설명하여 환경오염 물질 제거를 위한 반응로의 최적 설계를 위해 유용하게 쓰일 수 있을 것이다.

• 한국태양에너지학회 논문집
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• 제35권4호
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• pp.9-15
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• 2015

Black cobalt solar selective coatings were prepared by using an electroplating method. The changes in the optical properties of the black cobalt selective coating due to thermal degradation were analyzed by using the Auger electron spectroscopy (AES) and spectrophotometer. The black cobalt selective coating was prepared on a copper substrate by using a synthesized electrolyte with $CoCl_2$ and KSCN at a current density of ${\sim}0.5A/dm^2$ for 45s ~ 60s. Its optical properties were a solar absorptance (${\alpha}$) of the order of 0.80 ~ 0.84 and a thermal emittance (${\epsilon}$) of 0.01. From the AES depth profile analysis of heated sample, thermal degradation of the black cobalt selective coating heated for 33 hours at temperature of $350^{\circ}C$ occurred primarily due to interdiffusion at interface of cobalt and copper substrate. This results were predictable that the ${\alpha}$ decreases due to the thermal oxidation and diffusion.

• 한국재료학회지
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• 제13권8호
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• pp.485-490
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• 2003

We have developed a new way of the constant growth technique to maintain a grating height of originally-etched V-groove of submicron gratings up to 1.5 $\mu\textrm{m}$ thickness by a low pressure metalorganic chemical vapor deposition. The constant growth technique is well performed on two kinds of submicron gratings that made by holography and electron (e)-beam lithography GaAs buffer layer grown on thermally deformed submicron gratings has an important role in recovering the deformed grating profile from sinusoidal to V-shaped by reducing mass transport effects. The thermal deformation effect on submicron gratings made by e-beam lithography is less than that on submicron gratings made by holography. The constant growth technique is an important step to realize complex optoelectronic devices such as one-step grown distributed feedback lasers and two-dimensional photonic crystals.