• Journal of Radiation Protection and Research
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• 제42권1호
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• pp.63-68
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• 2017

Background: The combined effect of the low energy electron (LEE) irradiation and $Cu^{2+}$ ion on DNA damage was investigated. Materials and Methods: Lyophilized pBR322 plasmid DNA films with various concentrations (1-15 mM) of $Cu^{2+}$ ion were independently irradiated by monochromatic LEEs with 5 eV. The types of DNA damage, single strand break (SSB) and double strand break (DSB), were separated and quantified by gel electrophoresis. Results and Discussion: Without electron irradiation, DNA damage was slightly increased with increasing Cu ion concentration via Fenton reaction. LEE-induced DNA damage, with no Cu ion, was only 6.6% via dissociative electron attachment (DEA) process. However, DNA damage was significantly increased through the combined effect of LEE-irradiation and Cu ion, except around 9 mM Cu ion. The possible pathways of DNA damage for each of these different cases were suggested. Conclusion: The combined effect of LEE-irradiation and Cu ion is likely to cause increasing dissociation after elevated transient negative ion state, resulting in the enhanced DNA damage. For the decrease of DNA damage at around 9-mM Cu ion, it is assumed to be related to the structural stabilization due to DNA inter- and intra-crosslinks via Cu ion.

• Restorative Dentistry and Endodontics
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• 제32권1호
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• pp.47-60
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• 2007

치근 우식증은 복합적인 요인에 의해 발생되는 질환으로 고령 인구의 증가로 최근 증가추세에 있으나 아직까지는 병소 깊이, 상아질 탈회의 정도 및 양상, collagen의 파괴 정도 및 수산화인회석 결정 변화에 대한 탈회 완충액의 조직학적 연구는 미비한 실정이다. 본 연구는 우식 형성에 영향을 주는 산 완충용액 내의 pH와 유산의 농도변화에 따른 치근 상아질 우식 병소의 진행에 미치는 변화를 편광현미경을 이용하여 관찰하고 관찰된 우식 병소층의 수산화인회석의 결정 형태 변화를 주사전자현미경으로 관찰하여 탈회 과정을 살펴보고자 세 가지 pH (4.3, 5.0, 5.5)군과 각각의 pH군에 세 가지 유산의 농도 (25mM, 50 mM, 100 mM)를 이용하여 인공치근 우식을 형성한 후 비교 분석하여 다음과 같은 결과를 얻었다. 1. 편광현미경 소견에서 우식 병소의 깊이는 pH보다는 유산의 농도에 의해 더 영향을 많이 받았다. 2. 주사전자현미경 소견에서 유산의 농도가 높아질수록 그리고 pH가 낮아질수록 수산화인회석 결정의 소실이 더 많이 진행되었다. 3. 탈회는 수산화인회석 결정의 변연부가 소실되며 결정 cluster내 결정의 숫자 및 크기가 감소하였고 결정 cluster 사이의 간격이 넓어지는 양상으로 관찰되었다. 4. 표면층에서의 주사전자현미경 관찰 시 유산의 농도가 높아질록 수산화인회석 결정 cluster의 형태는 소실되고 콜라겐 섬유 표면에 수산화인회석 결정의 용해, 재결합된 양상으로 관찰되었다. 5. 탈회 과정에 대한 주사전자현미경 관찰 시 상아질의 탈회는 단순히 탈회만 독립적으로 일어나는 과정이 아닌 탈회와 재광화가 동시에 일어나는 양상으로 관찰되었다. 이상의 결과 산 완충용액 내의 유산의 농도가 높아지고 pH가 낮아질수록 탈회의 속도가 증가하고 탈회의 과정은 수산화인회석 결정 cluster의 표면으로부터 진행되며 시간이 경과함에 따라 수산화인회석 결정의 형태는 원형 또는 타원형에서 불규칙한 형태로 변화되었다.

• 한국염색가공학회지
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• 제17권4호
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• pp.1-6
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• 2005

We studied the degree of variety of indigo for the electrochemical redox reaction in addition of reducing agent and the electrokinetic parameters. The electrokinetic parameters such asthe number of electron and the exchange rate constant were obtained by cyclic voltammetry. With increasing scan rate, the reduction currents of indigo were increased and the reduction potentials were shifted to the negative direction. As the results, the reduction processes of the indigo were proceeding to totally irreversible and diffusion controlled reaction. Also, exchange rate constant ($k^0$) and diffusion coefficient ($D_0$) of indigo were decreased by increasing concentration of reducing agent. We found that the less concentration, the more easily diffused and electron transferred and the product was more stable.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1988년도 추계학술대회 논문집 학회본부
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• pp.363-367
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• 1988

A simple analytical model for the lateral channel electric field in gate - offset structured Lightly Doped Drain MOSFET has been developed. The model's results agree well with two dimensional device simulations. Due to its simplicity, our model gives a better understanding of the mechanisms involved in reducing the electric field in the LDD MOSFET. The model shows clearly the dependencies of the lateral channel electric field as function of drain and gate bias conditions and process, design parameters. Advantages of analytical model over costly 2-D device simulations is to identify the effects of various parameters, such as oxide thickness, junction depth, gate / drain bias, the length and doping concentration of the lightly doped region, on the peak electric field that causes hot - electron phenomena, individually. We are able to find the optimum doping concentration of LDD minimizing the peak electric field and hot - electron effects.

• 대한전자공학회논문지
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• 제25권10호
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• pp.1202-1208
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• 1988

n-AIGaAs/GaAs 계면에서의 2 차원 전자가스(2DEG)의 밀도와 전자상태를 각각 고전역학적인 방법과 양자역학적인 방법으로 계산하였다. Spacer두께와 AIGaAs층의 도핑농도가 2DEG 밀도에 주는 영향과 온도와 GaAs층의 불순물 농도가 전자상태에 미치는 영향을 조사하였다.

• 미생물학회지
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• 제21권1호
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• pp.27-35
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• 1983

The stoichiometry between the consumption of CO and $O_2$ and the production of $CO_2(2CO+O_2{\rightarrow}2CO_2)$) showed that Pseudomonas carboxydohydrogena grows as a typical aerobic CO oxidizer with CO. The optimal concentration of CO for growth was found to be 30% in gas mixture with air. The initial buffer concentration of the culture medium did not affect the growth of this bacterium. P. carboxydohydrogena is an obligate aerobe and dose not use nitrate as a terminal electron acceptor. The CO dehydrogenase is an inducible and soluble enzyme. The reaction rate and stability were maximal at pH7.5, and the Arrhenius plot revealed an activation energy of 37.7kJ/mol (9.0 Kcal/mol). The crude enzyme used methylene blue, thionin, and toluylene blue as electron acceptors for the oxidation of CO to $Co_2$ under anaerobic conditions. It was found that water must be the source of the second oxygen atom for CO oxidation.

• 열처리공학회지
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• 제14권6호
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• pp.345-349
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• 2001

This study has investigated the effect of thermal stability and mechanical property of $Fe_{80-X}P_{10}C_6B_4M_X$(X=2, 4, 6, M=transition metal) amorphous alloys fabricated by the melt-spun process. The glass transition temperature($T_g$), crystallization temperature($T_x$) and hardness increase with decreasing electron concentration (e/a) from about 7.38 to 7.18. The decrease of e/a implies the increase in the attractive bonding state between the M elements and other constituent element. The decrease in a/e leads to the enhancement of the attractive bonding state among the constituent elements which is favorable for the increase in $T_g$, $T_x$ and hardness.

• 한국분무공학회지
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• 제8권2호
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• pp.31-37
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• 2003

Polymeric fibers with nanometer-scale diameters are produced by electrospinning method. When the electrical forces at the surface of a polymer solution or melt overcome the surface tension, then electrospinning occurs and nanofibers are made. Polyethylene oxide(PEO) have been electrospun in our laboratory Electrospun PEO fibers are observed by scanning electron microscopy or transmission electron microscopy In thl:; study. the average diameter of the electrospun fibers decreases with decreasing PEO concentration and increasing electric field strength. The optimal conditions for producing uniform PEO 100nm fibers are the 10wt% PEO concentration at a voltage 25 to 30kV and a distance of 10cm from tip to collector.

• 한국식품영양과학회지
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• 제28권3호
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• pp.593-598
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• 1999

This study was designed to investigate the possible utilization of Zizyphus jujuba leaves as a source of functional ingredients. The physiological activity of different solvent fractions prepared from ethanol extract of Zizyphus jujuba leaves were analyzed. Xanthine oxidase inhibitory effect was very high in all fractions except chloroform fraction. The very high electron donating ability was observed in the ethylacetate fraction and the effect was similar to 0.1% tocopherol. Nitrite scavenging effect of all fractions was more than 40% even at low concentration of 1mg/ml and was increased with increasing concentration. Angiotensin I converting enzyme inhibitory activity was appeared in ethyl acetate and chloroform fractions only at high concentraton.

• 대한전기학회논문지
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• 제38권6호
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• pp.401-415
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• 1989

A simple but accurate analytical model for the lateral channel electric field in gate-offset structured Lightly Doped Drain MOSFET has been developed. Our model assumes Gaussian doping profile, rather than simple uniform doping, for the lightly doped region and our model can be applied to LDD structures where the junction depth of LDD is not identical to the heavily doped drain. The validity of our model has been proved by comparing our analytical results with two dimensional device simulations. Due to its simplicity, our model gives a better understanding of the mechanisms involved in reducing the electric field in the LDD MOSFET. The model shows clearly the dependencies of the lateral channel electric field on the drain and gate bias conditions and process, design parameters. Advantages of our analytical model over costly 2-D device simulations is to identify the effects of various parameters, such as oxide thickness, junction depth, gate/drain bias, the length and doping concentration of the lightly doped region, on the peak electric field that causes hot-electron pohenomena, individually. Our model can also find the optimum doping concentration of LDD which minimizes the peak electric field and hot-electron effects.