• Transactions of the Korean Society of Mechanical Engineers B
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• v.25 no.9
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• pp.1175-1182
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• 2001

Chemical compositions of polydisperse SiO$_2$/TiO$_2$multicomponent aggregates were measured for different heights from the burner surface and different mobility diameters of aggregates. SiO$_2$/TiO$_2$multicomponent particles were generated in a hydrogen/oxygen coflow diffusion flame from two sets of precursors: TTIP(titanium tetraisopropoxide), TEOS(tetraethylorthosilicate). To maintain 1:1 mole ratio of TTIP:TEOS vapor, flow rate of carrier gas $N_2$was fixed at 0.6lpm for TTIP, at 0.1lpm for TEOS. In-situ sampling probe was used to supply particles into DMA(differential mobility analyzer) which was calibrated with using commercial DMA(TSI, model 3071A) and classifying monodisperse multicomponent particles. Classified monodisperse particles were collected with electrophoretic collector. The distributions of composition from particles to particle were determined using EDS(energy dispersive spectrometry) coupled with TEM(transmission electron microscope). The chemical(atomic) compositions of classified monodisperse particle were obtained for different heights; z=40mm, 60mm, 80mm. The results suggested that the chemical(atomic) composition of SiO$_2$decreased with the height from burner surface and the composition of SiO$_2$and TiO$_2$approached to the value of 1 to 1 fat downstream. It is also found that the composition of SiO$_2$decreases as the mobility diameter of aggregate increases.

• Proceedings of the KSME Conference
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• 2000.04b
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• pp.441-446
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• 2000

Chemical compositions of monodisperse $SiO_2/TiO_2$ multicomponent aggregates were measured for different heights from the burner surface and different mobility diameters of aggregates. $SiO_2/TiO_2$ multicomponent particles were generated in a hydrogen/oxygen coflow diffusion flame from two sets of precursors: TTIP (titanium tetraisopropoxide), TEOS(tetraethylorthosilicate). To maintain 1:1 mole ratio of TTIP:TEOS vapor theoretically, flow rate of carrier gas $N_2$ was fixed at 0.61pm for TTIP, at 0.11pm for TEOS. In situ sampling probe was used to supply particles into differential mobility analyzer(DMA) which was calibrated with using commercial DMA(TSI 3071A) and classifying monodisperse multicomponent particles. Classified particles were collected with electrophoretic collector. The distributions of composition from particle to particle were determined using EDS (energy dispersive spectrometry) coupled with TEM (transmission electron microscope). The chemical (atomic) compositions of classified monodisperse particle were obtained for different heights; z=40mm, 60mm, 80mm. The results suggested that the atomic composition of $SiO_2$ decreased with the height from burner surface and the composition of $SiO_2$ and $TiO_2$ approached to the value of 1 to 1 in far downstream. It is also found that the composition of $SiO_2$ decreases as the mobility diameter of aggregate increases.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.259-259
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• 2010

Periodically polarity inverted (PPI) ZnO structures on (0001) Al2O3 substrates are demonstrated by plasmas assisted molecular beam epitaxy. The patterning and re-growth methods are used to realize the PPI ZnO by employing the polarity controlling method. For the in-situ polarity controlling of ZnO films, Cr-compound buffer layers are used.[1, 2] The region with the CrN intermediate layer and the region with the Cr2O3 and Al2O3 substrate were used to grow the Zn- and O-polar ZnO films, respectively. The growth behaviors with anisotropic properties of PPI ZnO heterostructures are investigated. The periodical polarity inversion is evaluated by contrast images of piezo-response microscopy. Structural and optical interface properties of PPI ZnO are investigated by the transmission electron microcopy (TEM) and micro photoluminescence ($\mu$-PL). The inversion domain boundaries (IDBs) between the Zn and the O-polar ZnO regions were clearly observed by TEM. Moreover, the investigation of spatially resolved local photoluminescence characteristics of PPI ZnO revealed stronger excitonic emission at the interfacial region with the IDBs compared to the Zn-polar or the O-polar ZnO region. The possible mechanisms will be discussed with the consideration of the atomic configuration, carrier life time, and geometrical effects. The successful realization of PPI structures with nanometer scale period indicates the possibility for the application to the photonic band-gap structures or waveguide fabrication. The details of application and results will be discussed.

• Polymer(Korea)
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• v.29 no.4
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• pp.357-362
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• 2005

As a new class of electroluminescent (EL) polymers, PPV-based polymers containing sulfone group in the main chain were synthesized through Witting polymerization reaction to control n-conjugation length and energy levels for predictable light emission and enhanced device performance. These EL polymers showed good solubility in common organic solvents and high thermal stability with initial decomposition temperature of ca. $400^{circ}$ and glass transition temperature around $200^{circ}C$ Emission colors were tuned from green to deep blue by reducing ${\pi}$-conjugated length between sulfone groups. It was also noted from the cyclic voltammetry (CV) measurements and semiempirical calculations that sulfone group with high electron affinity effectively lowered HOMO-LUMO energy levels to enhance EL device performance.

• Membrane Journal
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• v.28 no.4
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• pp.260-264
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• 2018

Poly (ethylene oxide) (PEO)/Ag nanoparticles (AgNPs)(precursor : $AgBF_4$)/p-benzoquinone (p-BQ) composite membrane was prepared for olefin/paraffin separation. As a result, the performance of composite membrane was observed to be maintained at selectivity of 10 and permeance of 15 GPU up to 100 hours. The performance of the membrane was maintained for 100 hours was attributable to that Ag ions could be converted into stable Ag NPs by addition of p-BQ. Furthermore, the surface was partially polarized by the electron acceptor p-BQ, resulting in the formation of olefin carrier. In this study, since the cost of $AgBF_4$ used as a precursor of Ag NPs was relatively higher, $AgNO_3$ was utilized. As a result, it was confirmed that $AgNO_3$ couldn't show the stable formation of nanoparticle, resulting in the poor separation performance.

• Economic and Environmental Geology
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• v.32 no.2
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• pp.189-201
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• 1999

Paleomagnetic and rock magnetic investigations have been carried out for the Cretaceous Hanyang Group, exposed in the Yongyang Sub-Basins within the Kyeongsang Basin, eastern South Korea. A total of 452 oriented core samples was drilled from 31 sits for the study. The in-situ site mean direction is more dispersed than the mean direction after bedding correction, indicating that the fold test is positive at 95% confidence level. In addition, the stepwise unfolding of the characteristic remanent magfold test is positive at 95% confidence level. In addition, the stepwise unfolding of the characteristic remanent magnetization reveals that a maximum value of k is observed at 90% unfolding. Furthermore, the rock magnetic investigations and electron microscope observations of the representative samples show that the main magnetic carrier of the Hayang Group is the detrital specular hematite of single and pseudo-single domain sizes with negligible contribution of pigmentary hematite grains. These results collectively imply that the ChRM direction is the primary component acquired at the time of the formation of the strata. Provided the primary nature of the ChRM, a magnetostratigraphic correlation between polarities of the studied formation and the Geomagnetic Time Scale indicates that the Hayang Group in the Yongyang Sub-Basin can be correlated to the Cretaceous Long Normal superchron. The paleomagnetic pole position from this study is significantly different from those of the Hayang group in the Euiseong the Milyang sub-Basins. Rather the paleomagnetic pole position of the Hayang Group of the study area is closer to that of the Quaternary period or present time of the Korean Peninsula. It is hypothesized that the study area might be rotated about 25$^{\circ}$ aticlockwise with respect to the Euiseong and Milyang Sub-Basins after the formation of the strata and aquisition of the ChRM, although there is not enough geologic evidence supporting the rotation hypothesis.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.490-490
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• 2011

Graphene, hexagonal network of carbon atoms forming a one-atom thick planar sheet, has been emerged as a fascinating material for future nanoelectronics. Huge attention has been captured by its extraordinary electronic properties, such as bipolar conductance, half integer quantum Hall effect at room temperature, ballistic transport over ${\sim}0.4{\mu}m$ length and extremely high carrier mobility at room temperature. Several approaches have been developed to produce graphene, such as micromechanical cleavage of highly ordered pyrolytic graphite using adhesive tape, chemical reduction of exfoliated graphite oxide, epitaxial growth of graphene on SiC and single crystalline metal substrate, and chemical vapor deposition (CVD) synthesis. In particular, direct synthesis of graphene using metal catalytic substrate in CVD process provides a new way to large-scale production of graphene film for realization of graphene-based electronics. In this method, metal catalytic substrates including Ni and Cu have been used for CVD synthesis of graphene. There are two proposed mechanism of graphene synthesis: carbon diffusion and precipitation for graphene synthesized on Ni, and surface adsorption for graphene synthesized on Cu, namely, self-limiting growth mechanism, which can be divided by difference of carbon solubility of the metals. Here we present that large area, uniform, and layer controllable graphene synthesized on Cu catalytic substrate is achieved by acetylene-assisted CVD. The number of graphene layer can be simply controlled by adjusting acetylene injection time, verified by Raman spectroscopy. Structural features and full details of mechanism for the growth of layer controllable graphene on Cu were systematically explored by transmission electron microscopy, atomic force microscopy, and secondary ion mass spectroscopy.

• Journal of the Korean Vacuum Society
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• v.1 no.1
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• pp.126-133
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• 1992

This study deals with the crystal growth and the optical characteristics of CdS thin films activatedby silver. CdS:Ag thin films were deposited by using an electron beam evaporation(EBE) technique in vacuumof 1.5X 10-'torr, voltage of 4 kV, current of 2.5 mA and substrate temperature of 250$^{\circ}$C CdS:Ag photoconductivefilms prepared by EBE method show high photoconductivity after annealing at about 550"c for 0.5 h in air andAr gas.The grain size of CdS:Ag thin films annealed in Ar atmosphere (1 atm) was grown over 1 ym and the thicknessof the films is 4-5 pm. The analysis of X-ray diffraction patterns shows that the crystal structures are hexagonal.The diffraction line by (00.2) plane can only be observed, indicating that c-axis of hexagonal grows preferentiallyperpendicular to the substrate. The profiles of photoluminescence spectra of CdS:Ag films show Gaussian typecurves at room temperature, the maximum peak spectral sensitivity of CdS:Ag is located at the wavelength of520 nm.We annealed CdS:Ag thin films in air and Ar vapor in order to make the CdS photoconductors having theintensive photocurrent, the broad distribution of the photocurrent spectrum and the large value of the ratioof the photocurrent (pc) to the dark current(dc). We found that CdS:Ag thin films annealed in air atmospherewas the best one.air atmosphere was the best one.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.144-144
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• 2012

최근 폴리머를 기판으로 하는 고속 Flexible TFT (Thin film transistor)나 고효율의 박막 태양전지(Thin film solar cell)를 실현시키기 위해 낮은 비저항(resistivity)을 가지며, 높은 홀 속도(carrier hall mobility)와 긴 이동거리를 가지는 다결정 반도체 박막(poly-crystalline semiconductor thin film)을 만들고자 하고 있다. 지금까지 다결정 박막 반도체를 만들기 위해서는 비교적 높은 온도에서 장시간의 열처리가 필요했으며, 이는 폴리머 기판의 문제점을 야기시킬 뿐 아니라 공정시간이 길다는 단점이 있었다. 이에 반도체 박막의 재결정화 온도를 낮추어 주는 metal (Al, Ni, Co, Cu, Ag, Pd, etc.)을 이용하여 결정화시키는 방법(MIC)이 많이 연구되어지고 있지만, 이 또한 재결정화가 이루어진 반도체 박막 안에 잔류 금속(residual metal)이 존재하게 되어 비저항을 높이고, 홀 속도와 이동거리를 감소시키는 단점이 있다. 이에 본 실험은, 종래의 MIC 결정화 방법에서 이용되어진 금속 증착막을 이용하는 대신, HIPIMS (High power impulse magnetron sputtering)와 PIII&D (Plasma immersion ion implantation and deposition) 공정을 복합시킨 방법으로 적은 양의 알루미늄을 이온주입함으로써 재결정화 온도를 낮추었을 뿐 아니라, 잔류하는 금속의 양도 매우 적은 다결정 반도체 박막을 만들 수 있었다. 분석 장비로는 박막의 결정화도를 측정하기 위해 GIXRD (Glazing incident x-ray diffraction analysis)와 Raman 분광분석법을 사용하였고, 잔류하는 금속의 양과 화학적 결합 상태를 알아보기 위해 XPS (X-ray photoelectron spectroscopy)를 통한 분석을 하였다. 또한, 표면 상태와 막의 성장 상태를 확인하기 위하여 HRTEM(High resolution transmission electron microscopy)를 통하여 관찰하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.154-154
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• 2011

자발형성법(Self-assembled)을 이용한 InAs 양자점(Quantum dots)은 성장법의 고유한 물리적 한계로 길이방향에 대한 수직방향 비율(Aspect ratio, AR)이 상대적으로 작은 값을 갖는다. 기존에 보고된 바에 따르면 GaAs 기판에 형성한 InAs 양자점은 일반적으로 AR이 0.3 정도를 보인다. 이러한 높이가 상대적으로 낮은 InAs 양자점은 수직방향으로 운반자(Carrier)의 파동함수 (Wave-function) 구속이 작게 되어 나노 양자점 구조의 0차원적 특성이 저하되게 된다. 본 논문에서는 Arsenic 차단법(Interruption technique)을 이용한 수정자발형성법(Modified self-assembled method, MSAM)으로 InAs 양자점(MSAM-InAs 양자점)을 형성하고 성장 변수에 따라 광 및 구조적 특성을 평가하여 0차원 순도를 분석하였다. MSAM InAs 양자점을 성장하고 12 nm 두께의 GaAs spacer 층을 증착한 후 $600^{\circ}C$에서 30초 동안 Arsenic 분위기에서 열처리(Annealing)를 수행 한 후 다시 InAs을 증착 하였다. 이러한 과정을 5번 반복하여 높이 방향으로 형상을 개선시킨 InAs 양자점을(Vetically-controlled MSAM, VCMSAM) 성장하였다. 기존 자발형성법을 이용한 InAs 양자점과 MSAM-InAs 양자점 단일층 구조를 기준시료로 성장하였다. 상온 포토루미네슨스(Photoluminescence, PL) 실험에서 단일 MSAM InAs 양자점 및 VCMSAM 양자점 시료의 발광에너지는 각각 1.10 eV와 1.13 eV를 나타내었다. VCMSAM InAs 양자점 시료의 PL세기는 단일 MSAM 양자점보다 3.4배 증가되어, 확연히 높게 나타나는 결과를 보였다. 이러한 결과는 높이 방향으로 운반자의 파동함수 구속력이 증가하여 구속준위 (Localized states)의 전자-정공의 파동함수중첩(Overlap integral)이 개선된 것으로 설명할 수 있다. 투과전자현미경(Transmission electron microscopy) 및 원자력간 현미경(Atomic force microscopy)을 이용하여 구조적 특성을 평가하고 이를 비교 분석한 결과를 보고한다.