• Optical Science and Technology
• /
• v.18 no.3
• /
• pp.17-22
• /
• 2014

• 한국초전도학회:학술대회논문집
• /
• v.9
• /
• pp.91-94
• /
• 1999

A new type of high-T$_c$ superconducting Josephson junctions has been prepared by Ar ion beam etching and electron beam lithography. YBa$_2Cu_3O_{7-x}$ (YBCO) films deposited on (001) SrTiO$_3$ single crystal substrate by pulsed laser deposition were patterned by Ar ion milling with photolithography. The narrow slit with a electroresist mask, about 1000 ${\AA}$ wide, was constructed over a 3 ${\sim}$ 5 ${\mu}$m bridge of a 1200-${\AA}$-thick YBCO film by electron beam lithography. The slit was then etched by the Ar ion beam to form a damaged 600-${\AA}$-thick YBCO. Thus prepared structure forms an S-N-S (YBCO - damaged YBCO - YBCO) type Josephson junctions. Those junctions exhibit RSI-like I-V characteristics at 77 K. The properties of the Josephson junctions such as I$_c$ R$_N$, and J$_c$ were characterized.

• Journal of the Korean Institute of Telematics and Electronics D
• /
• v.35D no.9
• /
• pp.42-47
• /
• 1998

We have fabricated electron-optical lens for micro E-beam system that can overcome the limitation of current E-beam lithography. Our electron-optical lens consists of multiple silicon electrodes which were fabricated by micromachining technology and assembled by anodic bonding. The assembled system was installed in UHV chamber to observe the emission characteristics of focused electrons by the electro-optical lens. We used STM(Scanning Tunneling Microscope) tip for electron source. By performing lithography with the focused electrons with PMMA(poly-methylmethacrylate) as E-beam resist. We could draw 0.13${\mu}{\textrm}{m}$ nano-scale lines.

• Korean Journal of Materials Research
• /
• v.11 no.9
• /
• pp.792-796
• /
• 2001

For electron beam lithography and SEM(scanning electron microscopy) applications, miniaturized electrostatic lenses called a microcolumn have been fabricated. In this paper, we report the fabrication technique for 20~30$\mu\textrm{m}$ apertures of electron lenses based on silicon and Mo membrane using an active Q-switched Nd:YAG laser. Experimental conditions of laser micromachining for silicon and Mo membrane are improved. The geometrical structures, such as the diameter and the preciseness of the micron-size aperture are dependent upon the total energy of the laser pulse train, laser pulse width, and the diameter of laser spot.

• Applied Chemistry for Engineering
• /
• v.16 no.6
• /
• pp.853-856
• /
• 2005

Inductively coupled plasma reactive ion etching of magnetic tunnel junction (MTJ) stack, which is one of the key elements in magnetic random access memory, was studied. The MTJ stacks were patterned in nanometer size by electron(e)-beam lithography, and TiN thin films were employed as a hard mask. The etch process of TiN hard mask was examined using Ar, $Cl_2/Ar$, and $SF_6/Ar$. The TiN hard mask patterned by e-beam lithography was first etched and then the etching of MTJ stack was performed. The MTJ stacks were etched using Ar, $Cl_2/Ar$, and $BCl_3/Ar$ gases by varying gas concentration and pressure.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2008.11a
• /
• pp.285-286
• /
• 2008

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2008.06a
• /
• pp.943-944
• /
• 2008

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2004.10a
• /
• pp.1017-1020
• /
• 2004

It is not efficient and scarcely out of the question to use commercial expensive electron beam lithography system widely used for semiconductor fabrication process for the manufacturing application field of various devices in the small business scope. Then scanning electron microscope based electron beam machining system is maybe regarded as a powerful model can be used for it simply. To get a complete suite of thus proper system, column unit build up with several electo-magnetic lens is necessarily required more than anything else to modify scanning electron microscope. In this study, various components included several electro-magnetic lens and main body which are essentially constructed for column unit are designed and manufactured. And this established column unit will be used for next connected study in the development step of scanning electron microscope based electron beam machining system.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.43 no.1 s.343
• /
• pp.7-12
• /
• 2006

In this study, we developed irreversible and stable micro-size ferromagnetic structures utilizing hydrogenation and electron-beam lithography processes. The compositionally modulated (CM) Fe-Zr thin films that had average compositions $Fe_XZr_{100-x}$ with $x=65-85\%$ modulation periods of similar to 1 nm, and total thicknesses of similar to 100 m were prepared. The magnetic properties of CM Fe-Zr thin films were measured using a SQUID magnetometer, VSM and B-H loop tracer. After hydrogenation, the CM films exhibited larger magnetic moment increases than similar homogeneous alloy films for all compositions and かey showed largest increase in $Fe_{80}Zr_{20}$ composition. After aging in air at $300^{\circ}K$ the hydrogenated $Fe_{80}Zr_{20}$ CM films showed much larger magnetic moment increases, indicating that they relax to a stable, irreversible, soft magnetic state. The selective hydrogenation through electron-beam lithographed windows were performed after the circle shaped windows were prepared on $Fe_{80}Zr_{20}$ CM films by electron beam lithography. The hydrogenation through electron-beam resist and W lithographic techniques give a $49\%$ magnetic moment increase. This method can be applied to nano scale structures.

• Proceedings of the IEEK Conference
• /
• 2005.11a
• /
• pp.1253-1256
• /
• 2005

We have developed an electron lithography method, Electron Emission Lithography (EEL), which is capable of printing integrated circuits with an exposure time of only a few seconds. The basic design of the mask, manufactured by standard MIM technology, will be discussed. Patterns printed into e-beam resist by a 1:1 projection system show the applicability of the mask for lithography purposes. The minimum feature size projected so far is 10 um in a system capable of 100 m resolution. Further improvements in resolution to 50 nm are possible.