• Korean Journal of Materials Research
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• v.23 no.3
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• pp.161-167
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• 2013

The ZnO thin films were grown on GaN template substrates by RF magnetron sputtering at different RF powers and n-ZnO/p-GaN heterojunction LEDs were fabricated to investigate the effect of the RF power on the characteristics of the n-ZnO/p-GaN LEDs. For the growth of the ZnO thin films, the substrate temperature was kept constant at $200^{\circ}C$ and the RF power was varied within the range of 200 to 500W at different growth times to deposit films of 100 nm thick. The electrical, optical and structural properties of ZnO thin films were investigated by ellipsometry, X-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL) and by assessing the Hall effect. The characteristics of the n-ZnO/p-GaN LEDs were evaluated by current-voltage (I-V) and electroluminescence (EL) measurements. ZnO thin films were grown with a preferred c-axis orientation along the (0002) plane. The XRD peaks shifted to low angles and the surface roughness became non-uniform with an increase in the RF power. Also, the PL emission peak was red-shifted. The carrier density and the mobility decreased with the RF power. For the n-ZnO/p-GaN LED, the forward current at 20 V decreased and the threshold voltage increased with the RF power. The EL emission peak was observed at approximately 435 nm and the luminescence intensity decreased. Consequently, the crystallinity of the ZnO thin films grown with RF sputtering powers were improved. However, excess Zn affected the structural, electrical and optical properties of the ZnO thin films when the optimal RF power was exceeded. This excess RF power will degrade the characteristics of light emitting devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.111-114
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• 1999

Electroluminescence(EL) devices based on organic thin films have been attracted lots of interests in large-area light-emitting display. In this stuffy, an emissive layer was fabricated using Langmuir-Blodgett(LB) technique in organic light-emitting (OLEDs). This emissive organic material was synthesized and named PECCP[poly(3.6-N-2-ethylhexyl carbazolyl cyanoterephthalidene)] which has a strong electron donor group and an electron acceptor group in main chain repeated unit. This material has good solubility in common organic solvents such as chloroform. THF, etc, and has a good stability in air. The Langmuir-Blodgett(LB) technique has the advantage of precise control of the thickness down to the molecular scale, In particular, by varying the film thickness it is possible to investigate the metal/polymer interface. Optimum conditions for the LB film deposition are usually determined by investigating a relationship between a surface pressure $\pi$ and an effective are A occupied by one molecule on the subphase. The LB films were deposited on an indium-tin-oxide(ITO) glass at a surface pressure of 10 mN/m and dipping speed of 12 mm/min after spreading PECCP solution on distilled water surphase at room temperature, Cell structure was ITO/PECCP LB film/Alq$_3$/Al. We considered PECCP as a hole -transport layer inserted between the emissive layer and ITO. We also used Alq$_3$ as an emissive layer and an electron transport layer. We measured current-voltage(I-V) characteristics, UV/visible absorption, PL spectrum and EL spectrum of the OLEDs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.529-532
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• 1999

본 연구에서는 유기 전기 발광 소자에서 녹색 발광층으로 사용되는 terbium(Tb) complexes와 europium(Eu) complex, 정공 수송층으로 사용되는 TPD (N, N\`-diphenyl-N,\`(3-methylphenyl)-1, 1\`biphenyl-4, 4\`-diamine), 그리고 전자 수송층으로 사용되는 Alq$_{3}$ (trois(8-hydroxyquinolino)aluminum), Bebq$_2$들의 Uv/Vis. 홉광도와 PL 스펙 트럼과 같은 광학적 특성을 조사하였으며 또한 이러한 물질들을 이용하여 다양한 종류의 유기 전기 발광 소자를 제작하고 제작된 소자들의 전류밀도-전압-조도 등의 전기 . 광학적 특성을 조사하였으며, 그 결과 다 음과 같은 결곤을 얻을 수 있었다. 다양한 ligand를 갖는 Tb complex들의 경우에도 EL 스펙트럼의 파장대 (wavelength)는 546nm~548nm의 녹색 발광을 하는 것을 알 수 있었고, 제작된 소자 중에서 Tb(ACAC)$_3$(Phen) 을 발광충으로 하고, TPD, 그리고 Bebq$_2$를 각각 정공 수송층, 전자 수송 층으로 한 소자가 가장 낮은 구동 전압을 갖는다는 것을 확인하였으며 logJ-logV 특성에서도 모든 전계 구간에서 이러한 구조의 소자가 가장 높은 전류밀도를 나타냈으며 저 전계 구간에서 전류밀도 타이가 가장 컸다. 소자의 전류밀도와 휘도의 관계에 있어서는 제작된 네 종류의 소자 중 Tb(ACAC)3(Cl-Phen)를 발광층으로 하고 TPD, 그리고 Bebq2를 각각 정공 수송층, 전자 수송 층으로 한 소자가 가장 휘도가 우수한 것을 알 수 있었다. 또한 red (europium complex), green (terbium complex), 그리고 blue (TPD) 색깔을 나타내는 유기 재료를 사용하여 한 소자에서 백색 소자를 제작하여 cyclic voltametric방법을 이용하여 각 유기 물질들의 에너지 준위를 조사하여, 각각의 소자들을 에너지 밴드 다이어그램(energy band diagram)으로 자세히 설명하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.453-453
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• 2010

In this study, zinc germanate ($Zn_2GeO_4$) thin films has been synthesized by using radio frequency magnetron sputtering and the divalent manganese-activated luminescence was characterized. X-ray diffraction patterns of the as-deposited $Zn_2GeO_4$:Mn films showed only a broad feature, indicative of an amorphous structure. Scanning electron microscopy images revealed that the as-deposited $Zn_2GeO_4$:Mn has a smooth surface morphology. The $Zn_2GeO_4$:Mn films were found to be crystallized by annealing in air ambient at temperatures as low as $700^{\circ}C$. The annealed $Zn_2GeO_4$:Mn possessed a rhombohedral polycrystalline structure. The broad-band photoluminescent emission spectrum from 470 to 650nm was obtained at room temperature from the $Zn_2GeO_4$:Mn films. The emission peak was centered at around 535nm in the green range, which originates from the intrashell transition of manganese $3d^5$ electrons from $^4T_1$ excited-state level to the $^6A_1$ ground state. The PL emission spectrum had an asymmetric line shape, which results from the $^3d_5$ electron transitions of divalent manganese ions located at different sites of the zinc germanate host crystal lattice. Electroluminescent devices were fabricated using $Zn_2GeO_4$:Mn as an emission layer. The fabricated devices showed a green EL emission similar to the PL emission. The CIE chromaticity color coordinates of the EL emission were determined to be x=0.308 and y=0.657.

• Applied Chemistry for Engineering
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• v.34 no.6
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• pp.633-639
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• 2023

We synthesized 2-(10-methyl-10H-phenothiazin-3-yl)-5-phenyl-1,3,4-oxadiazole (MPPO) and 5,5-(10-methyl-10H-phenothiazin-3,7-diyl)-bis-(2-phenyl-1,3,4-oxadiazole) (DPPO). MPPO has both electron-donating and electron-accepting substituents with asymmetric molecular geometry. By incorporating one extra electron-accepting group into MPPO, we created a symmetric molecule, which is DPPO. The optical and electrochemical properties of these compounds were measured. The lowest unoccupied molecular orbital (LUMO) level of DPPO was lower than that of MPPO. The excited-state dipole moment of DPPO, with symmetric geometry, was calculated to be 4.1 Debye, whereas MPPO, with asymmetric geometry, had a value of 7.0 Debye. The charge-carrier mobility of both compounds was similar. We fabricated non-doped organic light-emitting diodes (OLEDs) using D-A type molecules as an emitting layer. The current efficiency of the DPPO-based device was 7.8 cd/A, and the external quantum efficiency was 2.4% at 100 cd/m², demonstrating significantly improved performance compared to the MPPO-based device. The photophysical and electroluminescence (EL) characteristics of the two D-A type molecules showed that molecular symmetry, as well as the lowered LUMO level of DPPO, played critical roles in the enhancement of EL performance.

• Bulletin of the Korean Chemical Society
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• v.27 no.10
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• pp.1549-1552
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• 2006

We report a new series of blue dopants composed of both electron donating and electron accepting moieties in one molecule, based on nalidixic acid. The EL device derived from the dopant exhibits pure blue light emission (0.15, 0.14) The current efficiency is estimated to be 3.88 cd/A at 100 $cd/m^2$, which shows remarkable enhancement, compared to that of the host itself (2.5 cd/A at 100 $cd/m^2$) under the same conditions. These results demonstrate that the incorporation of a proper guest into the host in a guest-host doped system improves not only the purity of the fluorescent blue emission but also elevates its quantum efficiency, thus improving the OLED performance.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04a
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• pp.29-30
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• 2008

New spiro-type host materials, 5'-phenylnaphthyl-spiro[fluorene-7,9'-benzofluorene](BH-lPN) and 5',6-bis(phenylnaphthyl)-spiro[fluorene-7,9'-benzofluorene](BH-6PN) were designed and successfully prepared by the Suzki reaction. The EL characteristics of BH-1PN as blue host material doped with blue dopant materials, BD-1 were evaluated and compared with the existing host MADN:dopant BD-1 system. The structure of the device is ITO/DNTPD/NPB/Host:5% dopant/Alq3/Al-LiF. The device obtained from BH-lPN doped with BD-1 showed a good color purity and efficiency, on the other hand luminance and current-density characteristics are worse than that of MADN doped with BD-1.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.34.2-34.2
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• 2011

본 연구에서는 1986년에 국내 섬 지역에 설치된 태양전지 모듈을 대상으로 전기적 특성값의 열화 및 열화 원인에 대한 분석을 실시하였다. 태양전지 모듈의 초기 최대 출력값은 50 W였고, 5인치 단결정 실리콘 태양전지 36개로 구성되어 있었다. 첫째로, 육안 검사를 통해서 태양전지 모듈의 열화 현상을 관찰하였다. 태양전지 모듈의 절연성은 IEC 61215의 기준으로 측정하였다. 태양전지 모듈의 전기적 특성평가를 통해서 최대 출력값의 변화량을 측정하였고, EL(Electroluminescence) 측정을 통해서 태양전지의 열화를 분석하였다. 이를 통해 분석된 주요 열화 모드는 봉지재 (Encapsulant)의 변색(Discoloration) 및 박리(Delamination)현상이었다. 봉지재의 변색된 부분 및 변색되지 않은 부분의 태양광 반사도를 측정한 결과 변색된 부위의 반사도가 증가한 것을 확인하였다. 두번째로 최대 출력전압을 태양전지 모듈에 인가한 상태에서 태양전지 각각의 온도를 T.C (Thermocouple)을 이용하여 측정하였고, 이를 통해서 태양전지의 열화와 온도와의 관계를 분석하였다. 마지막으로 태양전지 모듈의 단면분석을 통해서 봉지재의 박리현상 및 리본와이어의 솔더 접합계면을 관찰하였다. 또한, 봉지재를 제거한 후에 SEM&EDX를 통해서 리본와이어 및 금속전극의 부식현상을 분석하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.940-943
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• 2003

We report the fabrication and the characterization of white organic light-emitting devices consisting of a red-emitting layer of a new DCM derivative doped into 4,4'bis[N-(1-napthyl)-N-phenyl-amino]-biphenyl (${\alpha}-NPD$) and a blue-emitting layer of 1,4-bis(2,2-diphenyl vinyl)benzene (DPVBi). The device structure is ITO/PEDOT:PSS/${\alpha}-NPD$ (50 nm)/${\alpha}-NPD$:DCM (5 nm, 0.2 %)/DPVBi (x)/Alq3 (40 nm)/LiF (0.5 nm)/Al. The electroluminescence (EL) spectra consist of two broad peaks around 470 nm and 580 nm with the spectral emission depending on the thickness of DPVBi. The device with the DPVBi thickness of about 20 nm show a white light-emission with the Commission Internationale d'Eclairage(CIE) chromaticity coordinates of (0.33, 0.36). The external quantum efficiency is 2.6% and luminous efficiency is 2.0 lm/W at a luminance of 100 $cd/m^{2}$. The maximum luminance is about 30,270 $cd/m^{2}$ at 13.9 V.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.483.1-483.1
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• 2014

태양광 시스템의 발전량의 증가로 인하여 높은 전위차에 의한 새로운 형태의 태양전지 모듈의 열화 및 출력 감소가 보고되고 있다. Potential induced degradation (PID) 이라고 불리는 이 현상은 고 전위차가 모듈을 구성하는 태양전지와 프레임 사이에 인가되며 발생하는 열화 현상이다. PID의 발생은 태양전지와 프레임 사이의 누설 전류의 크기를 통하여 간접적으로 설명이 되고 있다. 그리고 PID의 해결 방법으로 이 누설 전류를 줄이기 위하여 모듈의 구성 재료를 변화시키는 연구가 보고되고 있다. 하지만 아직 누설 전류와 출력 감소의 연관성에 대한 설명이 부족하고 정확한 발생 원인은 밝혀지지 못한 상황이다. PID가 발생된 이후 태양전지에 발생된 변화를 관찰하기 위하여 항온, 항습 챔버와 고전압 발생 장치에서 PID 시험을 하였다. 서로 다른 두 종류의 태양전지를 사용하여 시간에 따른 PID 현상의 차이점을 살펴보았고 출력 변화를 light IV로 관찰하였다. 또한 시간에 따른 모듈의 전기적 특성의 변화는 dark IV와 electroluminescence (EL)를 이용하여 측정하였다.