• Elastomers and Composites
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• 제46권3호
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• pp.231-236
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• 2011

본 연구에서는 폴리아크릴레이트/카본나노튜브 복합체를 제조하고 전극재료로서의 응용가능성을 알아보았다. 복합체의 전기전도도는 MWNT의 함량에 따라 증가하였고 시트의 두께가 두꺼워 질수록 증가하였으며 MWNT 50 wt% 함량에서 0.36 ${\Omega}$/sq의 표면저항값이 얻어졌다. 복합체의 열분해온도는 폴리아크릴레이트에 비해 MWNT의 함량에 따라 증가하였으며 50 wt%의 MWNT 복합체 함량에서 $15^{\circ}C$의 증가가 관찰되었다. 복합체의 저장탄성율의 경우도 MWNT의 함량에 따라 증가하였고 특히, 고온에서의 증가가 뚜렷하였다. 폴리아크릴레이트의 열팽창거동은 온도의 증가에 따라 $20^{\circ}C$ 부근부터 수축이 된 반면, 복합체의 경우는 수축되지 않고 약간 팽창하는 경향을 보였다. 복합체의 형태학을 관찰한 결과 폴리아크릴레이트 내에서 MWNT의 분산이 잘 이루어 진 것을 알 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 춘계학술대회 논문집
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• pp.14-16
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• 2008

Built-in voltage in organic light-emitting diodes was studied using modulated photocurrent technique ambient conditions. From the bias voltage-dependent photocurrent, built-in voltage of the device is determined. The applied bias voltage when the magnitude of modulated photocurrent is zero corresponds to a built-in voltage. Built-in voltage in the device is generated due to a difference of work function of the anode and cathode. A device was made with a structure of anode/$Alq_3$/cathode to study a built-in voltage. ITO was used as an anode, and Al and LiAl were used as a cathode. A layer thickness of Al and LiAl were 100nm. Obtained built-in voltage is about 1.0V in the Al layer was used as a cathode. The obatined built-in voltage is about 1.6V in the LiAl layer was used as a cathode. The result of built-in voltage is dependent of cathode. We can see that the built-in voltage increase up to 0.4V when the LiAl layer was used as the cathode. These results correspond to the work function of LiAl which is lower than that of Al. As a result, the barrier height for an electron injection from the cathode to the organic layer could be lowered when the LiAl was used as a cathode.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.399-402
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• 1998

Electroluminescent(EL) devices based on organic thin films have attracted lots of interests in large-area light-emitting display. One of the problems of such device is a lifetime, where a degradation of the cell is possibly due to an organic layers thickness, morphology and interface with electrode. In this study, light-omitting organic electroluminescent devices were fabricated using Alq$_3$(8-hydroxyquinolinate aluminum) and TPD(N,N'-diphenyl-N,N'-bis(3-methylphenyl(1-1\`-biphenyl]-4,4'-diamine). Where Alq$_3$ is an electron-transport and emissive layer, TPD is a hole-transport layer. The cell structure is ITO/TPD/Alq$_3$/Al and the cell is fabricated by vacuum evaporation method. In a measurement of current-voltage characteristics, we obtained a turn-on voltage at about 9 V. We also investigated stability of the devices using buffer layer with blend of PEI (Poly ether imide) and TPD by varying mot ratios between ITO and Alq$_3$. In current-voltage characteristics measurement, we obtained the turn-on voltage at about 6 V and observed an anomalous behavior at 3∼4 V. And we used other buffer layer of PEDT(3,4-pyrazino-3',4'-ethylenedithio-2,2',5,5'-tetrathiafulvalenium) with ITO/PEDT/TPD/Alq$_3$Al structure. We observed a surface morphology by AFM(Atomic Force Microscopy), UV/visible absorption spectrum, and PL(Photoluminescence) spectrum. We obtained the UV/visible absorption peak at 358nm in TPD and at 359nm in Alq$_3$, and the PL peaks at 410nm in TPD and at 510nm in Alq$_3$. We also studied EL spectrum in the cell structure of ITO/(TPD+PEI)/Alq$_3$/Al.

• 한국전기전자재료학회논문지
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• 제11권10호
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• pp.826-832
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• 1998

In this study the thin films with the structure of Si+SiO$_2$+TiN are made by RF supttering method. TiN, which has small diffusion coefficient and low resistivity, is evaporated between SiO$_2$ and Al layers. It investigates the V-R characteristics depending on the thickness of SiO$_2$ which is used as insulation layer and researches its effects on voltage stability of thin film and varistor. These films show very small resistance valus in negative(-) voltage and large and large value in positive voltage band, and with the increase of voltage, resistance value is rapidly reduced and the satisfactory characteristic of varistor is shown at +1[V]. It is found that resistance value of TiN thin film is small and also TiN thin film has more current than the thin film which is not evaporated by TiN thin film. When Al electrode is evaporated of SiO$_2$ thin film, spiking occurs, but the spiking can be prevented with evaporation of TiN between SiO$_2$ and Al layers and this thin films in made easily because of its good attachment. With the increase of voltage, the resistance is changed into non-linear pattern and the bidirectional varistor characteristic is shown and then its theory can be verified by this experiment. Accordingly, when TiN is evaporated of Si Wafer(n-100), it obtains better voltage-resistance than thin film which is not evaporated and also when varistor character is used electrically to automatic control element such as elimination of flame, power distribution arrestor and constant voltage compensation, satisfactory reproducibilities are expected.

• KSBB Journal
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• 제10권4호
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• pp.468-474
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• 1995

Glucose biosensor용 glucose oxidase 고정화 막의 단일화 벚 일회용의 간편화를 위한 연구로서, glucose oxidase의 고정화 대상막으로는 CTA와 PCL의 촌합비율이 80/20인 혼합막을 사용한 고저화 방법 중에서는 glutaraldehyde one-steD 방법으로 효소고정화층의 건조 전 두께가 $10{\mu}m$ 인 효소고정화 막이 효과적이었다. 이 고정화 막을 천자현미쇠 으로 관찰해 본 결과, 고밀도의 CTA/PCL 막층 위에 GOD-glutaraldehyde 층이 건조 후 $3{\mu}m$ 정도로 덮여 있는 것을 알 수 있었다. Dissolved oxygen전극을 사용하여 glucose농도의 증가에 따른 전류세기의 차이 값을 측정해 본 결과, glucose 7mM의 안도범위 내에서 선형성을 나타냈으므로 이 고정화원이 glucose sensor용 효소고정화 방법으로 가장 적합하였다. 한편, tyrosmase는 CTA와PCL의 혼 합비율이 80/20인 혼합막에 direct CDI 방법으로 고정화한 것이 가장 효과적이었으며, 8일 후에도고 정화된 tyrosmase의 활성이 35% 이상 유지되었다.

• 한국정보통신학회논문지
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• 제13권12호
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• pp.2662-2670
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• 2009

반사기 형태에 따른 경사진 빗살무늬 변환기 SAW 필터 특성을 비교하기 위해 모의실험을 통해 Langasite 기판위에 전극을 형성시켰으며, 전극재료로는 Al-Cu를 사용하였다. 모의실험을 바탕으로 입력단에는 IDT를 직렬형태로 연결시킨 block 형태로 하중을 가하는 전극 방법을 쓰고 출력단은 withdrawal 형태로 하중을 가하는 방법을 써서 제작하였다. 이를 바탕으로 광대역의 SAW 필터 전극 설계 방식에 대한 적절한 위상조건도 얻고자 시도하였다. Langasite 기판위에 형성시킨 입 출력빗살무늬 변환기 전극수는 50쌍, 두께는$5000{\AA}$으로 하였으며, 반사기 폭과 간격은 각각 $3.6{\mu}m$ 및 $2.0{\mu}m$으로 하였다. 제작한필터의 주파수 특성은 중심주파수가 대략 190MHz정도, 대역폭은 8.0MHz 정도로 측정되었으며, matching 후 return-loss는 -16dB 이하이고, 리플 특성은 4dB 정도이며, 반사에 의한 잔향은 -20dB 이하로 측정되었다.

• 한국전기전자재료학회논문지
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• 제26권3호
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• pp.198-203
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• 2013

Dye-sensitized solar cells (DSSCs) based on titanium dioxide ($TiO_2$) have been extensively studied because of their promising low-cost alternatives to conventional semiconductor based solar cells. DSSCs consist of molecular dye at the interface between a liquid electrolyte and a mesoporous wide-bandgap semiconductor oxide. Most efforts for high conversion efficiencies have focused on dye and liquid electrolytes. However, interface engineering between dye and electrode is also important to reduce recombination and improve efficiency. In this work, for interface engineering, we deposited semiconducting ferroelectric $BiFeO_3$ with bandgap of 2.8 eV on $TiO_2$ nanoparticles and nanotubes. Photovoltaic properties of DSSCs were characterized as a function of thickness of $BiFeO_3$. We showed that ferroelectric $BiFeO_3$-coated $TiO_2$ electrodes enable to increase overall efficiency of DSSCs, which was associated with efficient electron transport due to internal electric field originating from electric polarization. It was suggested that engineering the dye-$TiO_2$ interface using ferroelectric materials as inorganic modifiers can be key parameter for enhanced photovoltaic performance of the cell.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.158-161
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• 2004

We have studied a lifetime in organic light-emitting diodes depending on buffer layer. A transparent electrode of indium-tin-oxide(ITO) was used as an anode. And the cathode for electron injection was LiAl. Phthalocyanine Copper(CuPc), Poly(3,4-ethylenedioxythiophene):poly (PEDOT:PSS), or poly (9-vinylcarbazole)(PVK) material was used as a buffer layer. A thermal evaporation was performed to make a thickness of 40nm of TPD layer at a rate of $0.5{\sim}1\;{\AA}/s$ at a base pressure of $5{\times}10^{-6}\;torr$. A material of tris(8-hydroxyquinolinate) Aluminum($Alq_3$) was used as an electron transport and emissive layer. A thermal evaporation of $Alq_3$ was done at a deposition rate of $0.7{\sim}0.8[{\AA}/s]$ at a base pressure of $5{\times}10^{-6}\;torr$. By varying the buffer material, hole injection at the interface could be controlled because of the change in work function. Devices with CuPc and PEDOT:PSS buffer layer are superior to the other PVK buffer layer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.8-9
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• 2006

Hafnium oxide ($HfO_2$) thin films were deposited on p-type (100) silicon wafers by atomic layer deposition (ALD) using TEMAHf and $O_3$. Prior to the deposition of $HfO_2$ films, a thin Hf ($10\;{\AA}$) metal layer was deposited. Deposition temperature of $HfO_2$ thin film was $350^{\circ}C$ and its thickness was $150\;{\AA}$. Samples were then annealed using furnace heating to temperature ranges from 500 to $900^{\circ}C$. The MOS capacitor of round-type was fabricated on Si substrates. Thermally evaporated $3000\;{\AA}$-thick AI was used as top electrode. In this work, We study the interface characterization of $HfO_2$/Hf/Si MOS capacitor depending on annealing temperature. Through AES(Auger Electron Spectroscopy), capacitance-voltage (C-V) and current-voltage (I-V) analysis, the role of Hf layer for the better $HfO_2$/Si interface property was investigated. We found that Hf meta1 layer in our structure effective1y suppressed the generation of interfacial $SiO_2$ layer between $HfO_2$ film and silicon substrate.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.623-626
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• 2005

Toward the practical applications, on operation of conduction-cooled HTS SMES at temperatures well below 77 K should be investigated, in order to take advantage of a greater critical current density of HTS and considerably reduce the size and weight of the system. Recently, research and development concerning application of the conduction-cooled HTS SMES that is easily movement are actively progressing in Korea. Electrical insulation under cryogenic temperature is a key and an important element in the application of this apparatus. Using multi wrapped copper by polyimide film for HIS SMES, the breakdown characteristics of models for turn-to-turn, that is surface contact model, were investigated under ac and impulse voltage at 77 K. A material that is Polyimide film (Kapton) 0.025 mm thickness is used for multi wrapping of the electrode. Statistical analysis of the results using Weibull distribution to examine the wrapping number effects on breakdown voltage under ac and impulse voltage in $LN_2$ was carried.