• Transactions on Electrical and Electronic Materials
• /
• v.16 no.2
• /
• pp.99-102
• /
• 2015

Thin film transistors (TFTs) with amorphous 2 wt% silicon-doped zinc tin oxide (a-2SZTO) channel layer were fabricated using an RF magnetron sputtering system, and the effect of post-annealing treatment time on the structural and electrical properties of a-2SZTO systems was investigated. It is well known that Si can effectively reduce the generation of oxygen vacancies. However, it is interesting to note that prolonged annealing could have a bad effect on the roughness of a-2SZTO systems, since the roughness of a-2SZTO thin films increases in proportion to the thermal annealing treatment time. Thermal annealing can control the electrical characteristics of amorphous oxide semiconductor (AOS) TFTs. It was observed herein that prolonged annealing treatment can cause bumpy roughness, which led to increase of the contact resistance between the electrode and channel. Thus, it was confirmed that deterioration of the electrical characteristics could occur due to prolonged annealing. The longer annealing time also decreased the field effect mobility. The a-2SZTO TFTs annealed at 500℃ for 2 hours displayed the mobility of 2.17 cm²/Vs. As the electrical characteristics of a-2SZTO annealed at a fixed temperature for long periods were deteriorated, careful optimization of the annealing conditions for a-2SZTO, in terms of time, should be carried out to achieve better performance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.21 no.10
• /
• pp.885-888
• /
• 2008

We present simulation results on DC characteristics of AlGaN/GaN HEMTs having trench shaped source/drain Ohmic electrodes. In order to reduce the contact resistance in the source and drain region of the conventional AlGaN/GaN HEMTs and thereby to increase their DC output power, we applied narrow-shaped-trench electrode schemes whose size varies from $0.5{\mu}m$ to $1{\mu}m$ to the standard AlGaN/GaN HEMT structure. As a result, we found that the drain current was increased by 13 % at the same gate bias condition and the transconductance (gm) was improved by 11 % for the proposed AlGaN/GaN HEMT, compared with those of the conventional AlGaN/GaN HEMTs.

• Journal of Hydrogen and New Energy
• /
• v.22 no.3
• /
• pp.283-291
• /
• 2011

Polymer electrolyte membrane fuel cells (PEMFCs) use the bipolar plate of various materials between electrolyte and contact electrode for the stable hydrogen ion exchange activation. The bipolar plate of various materials has representatively graphite and stainless steel. Specially, stainless steels have advantage for low cost and high product rate. In this study, SUS 316 was effectively coated with 600 nm thick F-doped tin oxide (SnOx:F) by electron cyclotron resonance-metal organic chemical vapor deposition and investigated in simulated fuel cell bipolar plates. The results showed that an F-doped tin oxide (SnOx:F) coating enhanced the corrosion resistance of the alloys in fuel cell bipolar plates, though the substrate steel has a significant influence on the behavior of the coating. Coating SUS 316 for fuel cell bipolar plates steel further improved the already excellent corrosion resistance of this material. After coating, the increased ICR values of the coated steels compared to those of the fresh steels. The SnOx:F coating seems to add an additional resistance to the native air-formed film on these stainless steels.

• 전기의세계
• /
• v.25 no.5
• /
• pp.63-69
• /
• 1976

Among various types of photo-electric energy conversion element which can transfer solar energy into electric energy through the photo voltaic effect, Si solar cells were investigated on photoelectric characteristics, improvements of its efficiency and economical evaluation for its production cost. To study the above subjects, we decided best conditions on fabricating of thin film Si solar cell by epitaxial growth and knew that the thin solar cell by epitaxial growth was more efficient than that by diffusion process. And also higher photo voltaic output was obtained as a effect of SiO as antireflection coating by several methods, i.e. vacuum evaporating techniques of electrode to decrease the contact resistance and to form best ohmic contact, and concentration techniques of sun's ray by lenz or both-sided illumination through special structure for reflection using mirrors.

• Journal of Korean Tunnelling and Underground Space Association
• /
• v.21 no.2
• /
• pp.267-278
• /
• 2019

Variety of tunnel ahead prediction methods have been performed for safe tunnel construction during tunnel excavation. Pole-pole array among the electrical resistivity survey, which is one of the tunnel ahead prediction method, has been utilized to predict water-bearing sediments or weak zone located within 5 times of tunnel diameter. One of the most important processes is the estimation of virgin ground resistivity and it can be obtained from the following process: 1) calculation of contact area between the electrodes and the medium, and 2) assumption of the electrodes as equivalent spherical electrodes which have a same surface area with the electrodes. This assumption is valid in a small contact area and sufficient distance between the electrodes. Since the measured resistance, in general, varies with the electrode size, shape, and distance between the electrodes, it is necessary to evaluate the influence of these factors. In this study, theoretical equations were derived and experimental tests were conducted considering the electrode size, shape, and distance of cylindrical electrodes which is the most commonly utilized electrode shape. Through this theoretical and experimental study, it is known that one should be careful to use the assumption of the equivalent half-spherical electrode with large ratio between the penetrated depth and radius of the cylindrical electrode, as the error may get larger.

• Journal of the Korean Ceramic Society
• /
• v.36 no.9
• /
• pp.982-990
• /
• 1999

YSZ/LSM composite cathode was fabricated by dip-coating of YSZ sol on the internal pore surface of a LSM cathode followed by sintering at low temperature (800-100$0^{\circ}C$) The YSZ coating significantly increased the TPB(Triple Phase Boundary) where the gas the electrode and the electrolyte were in contact with each other. Sinter the formation of resistive materials such as La2Zr2O7 or SrZrO3 was prevented due to the low processing temperature and TPB was increased due to the YSZ film coating the electrode resistance (Rel) was reduced about 100 times compared to non-modified cathode. From the analysis of a.c impedance it was shown that microstructural change of the cathode caused by YSZ film coating affected the oxygen reduction reaction. In the case of non-modified cathode the RDS (rate determining step) was electrode reactions rather than mass transfer or the oxygen gas diffusion in the experimental conditions employed in this study ($600^{\circ}C$-100$0^{\circ}C$ and 0,01-1 atm of Po2) for the YSZ film coated cathode however the RDS involved the oxygen diffusion through micropores of YSZ film at high temperature of 950-100$0^{\circ}C$ and low oxygen partial pressure of 0.01-0.03 atm.

• The Journal of Engineering Geology
• /
• v.30 no.4
• /
• pp.423-433
• /
• 2020

Direct current (DC) electric fields have been used for electro-osmotic dewatering. Under DC conditions, however, the electrical contact resistance between the electrode and the dewatering material increases considerably during the process of dewatering. Such a circumstance hinders the continuation of effective electro-osmotic dewatering. To reduce this hindrance, an applied pulse electric field with periodic reversals of the electrode polarity should improve electro-osmotic dewatering. In this study, electro-osmotic dewatering under pulse conditions was experimentally investigated for electrode polarity reversals. During the dewatering process, the pulse electric field was able to reduce the hindrance caused by the DC, resulting in an increased final dewatered amount relative to that under a DC electric field. For a constant applied voltage, the reversed polarity condition, under which the electric current passing through the material was almost unchanged with time, yielded the maximum final dewatered amount. This technique can be used to enhance drainage from a water storage facility during a period of extreme drought and the seawater desalination plants using reverse osmosis in drought stricken coastal regions.

• 한국신재생에너지학회:학술대회논문집
• /
• 2007.06a
• /
• pp.231-234
• /
• 2007

The solid state dye-sensitized saolrc cells (DSSCs) employing polymer electrolytes show high overall energy conversion efficiency as high as 4.5% at 1 sun conditions. The improved efficiency may be primarily due to the enlarged interfacial contact area between the electrolyte and dyes in addition to the increased ionic conductivity, which were done by utilizing liquid oligomers, followed by in situ self-solidification, to form the solid DSSCs "Oligomer Approach". The effect of the charge transfer resistance at the counter electrode side on the effciency has also been investigated.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.15 no.11
• /
• pp.969-975
• /
• 2002

Thin film transistors(TFT) were made based on the polycrystalline Si (poly-Si) crystallized by sequential lateral solidification(SLS) method. The electrical characteristics of the devices were analyzed. n-type TFTs did not show a superior characteristics compared to p-type TFTs. We analyzed the causes of the failure by focused ion beam(FIB) analysis and automatic spreading resistance(ASR) measurement, to study the structural integrity and the doping distribution, respectively. FIB showed no structural problems but it revealed a non-intermixed layer in the contact holes between the polysilicon and the aluminum electrode. ASR analyses on poly-Si layer with various doping concentrations and activation temperatures showed that the inadequately doped areas were partially responsible for the inferior behavior of the whole device.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2000.01a
• /
• pp.89-90
• /
• 2000

A new technology realizing interconnection between Plastic Film LCDs panel and a driving circuit was developed under the processing condition of low temperature and pressure with ACFs developed for Plastic Film LCDs. The conduction failure of interconnection of the two resulted from elasticity, low thermal resistance and high thermal expansion of plastic substrates. Conductive particles with elasticity similar to the plastic substrate did not damaged a ITO electrode on plastic substrates, and low temperature and pressure process also did not deform the surface of plastic substrates. As a result highly reliable interconnection with minimum contact resistance was accomplished.