• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2010년도 춘계학술대회 논문집
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• pp.197-198
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• 2010

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2007년도 춘계학술대회 논문집
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• pp.27-28
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• 2007

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2010년도 추계학술대회 논문집
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• pp.139-140
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• 2010

• 한국해양공학회지
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• 제19권6호통권67호
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• pp.72-77
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• 2005

The materials used in a ship screw propeller are commonly made with brass. The seawater corrosion and seawater cavitation of the screw propeller reduces the propulsive performance of the ship. In screw manufacturing, the corrosion rust of the screw propeller is removed through a hand grinding method. The grinding process produces dust of the heavy metals from the brass. The dust creates a poor working environment that is harmful to the health of the workers. An automatic corrosionrust removing apparatus, using a blasting method, was developed for the improvement of screw polishing conditions and its working environment. The performance of this apparatus was investigated by surface roughness, weight loss rate, hardness, electrochemical corrosion resistance, and cavitation erosion, after removing of the corrosion rust under various blasting conditions. Two medias of alumina and emery were used in this experiment. The surface roughness and hardness of the screw were improved by this apparatus. The electrochemical corrosion potential (Ecorr) and current density (Icorr) were measured by the dynamic polarization method, using a potentiostat,under the conditions of surface polishing with grinding, blasting, wire brushing, and fine sand papering. The test results prove that the new corrosion rust-removing apparatus improves the surface performance of a screw propeller.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.49-49
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• 2007

최근 반도체 소자의 고집적화와 나노 (nano) 크기의 회로 선폭으로 인해 기존에 사용되었던 텅스텐이나 알루미늄 금속배선보다, 낮은 전기저항과 높은 electro-migration resistance가 필요한 Cu 금속배선이 주목받게 되었다. 하지만, Cu CMP 공정 시 높은 압력으로 인하여 low-k 유전체막의 손상과 디싱과 에로젼 현상으로 인한 문제점이 발생하게 되었다. 본 논문에서는, $KNO_3$ 전해액의 농도가 Cu 표면에 미치는 영향을 알아보기 위해 Tafel Curve와 CV (cyclic voltammograms)법을 사용하여 전기화학적 특징을 알아보았고 scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), X-ray Diffraction (XRD) 분석을 통해 금속표면을 비교 분석하였다.

• Corrosion Science and Technology
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• 제22권3호
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• pp.164-174
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• 2023

Electropolishing technology uses an electrochemical reaction and improves surface roughness, glossiness, and corrosion resistance. In this investigation, electropolishing was performed to improve the corrosion resistance of super austenitic stainless steel. As a result of electropolishing, surface roughness (0.16 ㎛) was improved by about 76.5% compared to mechanical polishing (0.68 ㎛). In addition, the electropolished surface was smooth because the average and variance values of the depth histogram were small. Tafel analysis was performed after a potentiodynamic polarization experiment with seawater temperature, and the microstructure was compared and analyzed. The corrosion current density at 30 ℃, 60 ℃, and 90 ℃ was reduced by 0.083 ㎂/cm², 0.296 ㎂/cm², and 0.341 ㎂/cm², respectively. Pitting occurred in the mechanical polished specimen at 30 ℃, but partial intergranular corrosion was observed in the electropolished specimen, and pitting occurred predominantly at both 60 ℃ and 90 ℃. In addition, the damage depths of the electropolished specimen were shallower than those of mechanical polishing at 30 ℃ and 60 ℃, but the opposite result was seen at 90 ℃.

• Transactions on Electrical and Electronic Materials
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• 제6권5호
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• pp.225-228
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• 2005

In this work, we studied the optimized copper thickness in Cu ECP (Electrochemical Plating). In order to select an optimized Cu ECP thickness, we examined Cu ECP bulge (bump, hump or over-plating amount), Cu CMP dishing and electrical properties of via hole and line trench over dual damascene patterned wafers split into different ECP Cu thickness. In the aspect of bump and dishing, the bulge increased according as target plating thickness decreased. Dishing of edge was larger than center of wafer. Also in case of electrical property, metal line resistance distribution became broad gradually according as Cu ECP thickness decreased. In conclusion, at least $20\%$ reduced Cu ECP thickness from current baseline; $0.8\;{\mu}m$ and $1.0\;{\mu}m$ are suitable to be adopted as newly optimized Cu ECP thickness for local and intermediate layer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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• pp.301-306
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• 2000

This paper describes on the fabrication of a SOI substrate by SDB technology and electrochemical etch-stop. The surface of the thinned SDB SOI substrate is more uniform than that of grinding or polishing by mechanical method, and this process was found to be a very accurate method for SOI thickness control. During electrochemical etch-stop, leakage current versus voltage curves were measured for analysis of the open current potential(OCP) point, the passivation potential(PP) point and anodic passivation potential. The surface roughness and the controlled thickness selectivity of the fabricated a SDB SOI substrate were evaluated by using AFM and SEM, respectively.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2000년도 춘계학술대회논문집A
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• pp.792-796
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• 2000

With the development of micro machining, it becomes an important part to fabricate an electrode which has tens of ${\mu}m$ or less. There are two methods to get a narrow hole; non-contact type such as EDM(Electro-discharge machining) and contact type such as punching. A punch which has a tapered shape with a cylindrical tip is fabricated in this paper. To make this punch, a method which was used to fabricate a cylindrical shape by electrochemical process was applied. The control factors for the shape and their limits are verified through an experiment.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.362-365
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• 1999

This paper describes on thinning SDB SOI substrates by SDB technology and electrochemical etch-stop. The surface of the fabricated SDB SOI substrates is more uniform than that grinding or polishing by mechanical method, and this process is possible to accurate SOI thickness control. During Electrochemical etch-stop, leakage current versus voltage curves were measured for analysis of the open current potential (OCP) point and the passivation potential (PP) poin and determinated to anodic substrates were analyzed by using AFM and SEM, respectivelv.