• JSTS:Journal of Semiconductor Technology and Science
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• 제6권2호
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• pp.79-86
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• 2006

N-polar, Ga-polar, and non-polar GaN was grown by MBE and MOVPE using various substrates and influence of polarity has been investigated. The GaN growth by MOVPE is along cplane (0001), c-plane (0001), and a-plane (11-20) direction on c-plane (0001), a-plane (11-20) and r-plane (1-102) sapphire substrate respectively. The polarity of the film has a strong influence on the morphology and the optical properties of PA-MBE grown As-doped GaN layers. Strong blue emission from As-doped GaN was observed only in the case of N-polarity (000-1) layers, which was attributed to the highest concentration of Ga dangling bonds for this polarity of a GaN surface.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.160-160
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• 2009

In recent years, the merging of nanomaterials and nano-technology into electro-optic (EO) device technology such as liquid crystal displays (LCDs) has attracted much attention because of their unique electro- and magneto-optic properties and novel display applications. One example of hybrid LC-inorganic systems is semiconductor nanorods added to LC for their strong reorientation effect and tunable refractive index. Doping of nanoparticles in LC or polymers can lead to changes in performance characteristics such as electro-optical, dielectric, memory effect, phase behavior, etc. Due to the tunability of LCDs with mixed inorganic materials, low voltage operation of a LC system can also be achieved using the significant electro-optical effect achieved through suspension of ferroelectric nanoparticles in NLC.

• 대한전자공학회논문지
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• 제27권12호
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• pp.1894-1899
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• 1990

We present an electro-optical voltage sensor. Crystalline bismuth germanate(BI4Ge3O12) used as the electro-opticla crystal exhibited linear birefringences of 1.7x10**-5 to 5.4x10**-4. And these birefringences were observed to be strongly temperature dependent. In order to improve the stability of the electro-opticlal voltage sensor, crystals (Bi4Ge3=12) were annealed and a compensation method was used. After applying this compensation method to the voltage sensor, the temperature stability, pressure stability, and vibration stability of the sensor were highly improved, Noise Equivalent Voltage of this sensor was a few mV/\ulcornerz.

• 한국광학회:학술대회논문집
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• 한국광학회 2001년도 제12회 정기총회 및 01년도 동계학술발표회
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• pp.228-229
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• 2001

Electroluminescent polymers have attracted considerable attention due to possible applications as large-area light-emitting displays. There have been many efforts to improve the electroluminescent efficiency. To design the polymer with high efficiency, it is necessary to understand the luminescent mechanism. In this report, we have investigated two-photon absorption(2PA) characteristics of highly efficient electroluminescent polymer using various techniques such as nonlinear transmission, 2PA-induced photoluminescence(2PA-PL) and 2PA-induced photoconductivity(2PA-PC). (omitted)

• 한국전기전자재료학회논문지
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• 제15권3호
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• pp.253-257
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• 2002

A new photoalignment material PNC, pole norbornene-2,3-dicarboxyolyl cholesterol, was synthesized and the electro-optical (EO) characteristics of the vortical-alignment (VA) liquid crystal display (LCD) photoaligned with UV exposure on the PNC surface were studied. EO characteristics of the photoaligned VA-LCD using a UV filter-less method was better than that of the UV filter method on the PNC surface for short UV exposure time. The response time of the photoaligned VA-LCD on the PNC surface without UV filter on the PNC surface is almost the same compared with the rubbing aligned VA-LCD.

• Journal of Information Display
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• 제10권2호
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• pp.80-86
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• 2009

The variation of the electrical characteristics of thin-film transistors (TFTs) causes a non-uniform image quality problem, and the differential aging of organic light-emitting diode (OLED) devices causes an image-sticking problem. A video data correction method is proposed herein as an effective solution to the non-uniform electro-optical characteristics of the pixels in activematrix organic light-emitting diode (AMOLED) displays. The results of the simulation that was conducted show that the proposed method successfully senses the electrical characteristics of TFTs and the degradation of OLEDs and effectively compensates for them.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2010년도 춘계학술발표대회
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• pp.20.1-20.1
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• 2010

'Electronic paper (EP)' provides desirable viewing characteristics of paper with being thin, lightweight, flexible, and recordable with minimal power consumption. Currently, a number of different technologies to realize the EP are actively competing. Here we demonstrate a newly developed monolayer rotating ball (MRB) electronic paper display where optically anisotropic rotating balls were disposed in a monolayer, and controllably closely packed with respect to one another. The close packed monolayer configuration provides high brightness and improved contrast with better electrical and optical features in comparison with the typical (Gyrion) rotating ball display. In this talk, we present characteristics of the MRB display in terms of performance, with particular emphasis on the response time as a function of the electric field.

• Current Optics and Photonics
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• 제6권3호
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• pp.323-331
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• 2022

Electro-optic modulator (EOM) takes a vital role in connecting the electric and optical fields. Here, we present a heterogeneously integrated EOM based on the lithium niobate-on-insulator (LNOI) platform. The key modulation waveguide structure is a field-enhanced slot waveguide formed by embedding silicon nanowires in a thin-film lithium niobate (LN), which is different from the previously reported LN ridge or etchless LN waveguides. Based on such slot structure, optical mode field area is reduced and enhanced electric field in the slot region can interact well with LN material with high Electro-optic (EO) coefficient. Therefore, the improvements in both aspects have positive effects on enhancing the modulation performance. From results, the corresponding EOM by adding such modulation waveguide structure achieves better performance, where the key half-wave-voltage-length product (V_𝜋L) and 3 dB EO bandwidth are 1.78 V·cm and 40 GHz under the electrode gap width of only 6 ㎛, respectively. Moreover, Lower V_𝜋L can also be achieved. With these characteristics, such field-enhanced waveguide structure could further promote the development of LNOI-based EOM.

• E2M - 전기 전자와 첨단 소재
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• 제12권8호
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• pp.39-45
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• 1999

Comparative photoresponsive current-volt-age characteristics of n-channel PHEMT and MESFET on GaAs substrate. with (W/L)=200${\mu}{\textrm}{m}$/1${\mu}{\textrm}{m}$ of gates, are reported as a function of electro-optical stimulation (P\ulcorner, λ=830nm) for the first time as far as we know. Significantly different photoresponses are observed in MESFET and PHEMT, mainly due to different optoelectronic mechanisms in the formation and current conduction of channel carriers. Under high optical power, high photoresponsity with a strong non-linearity with P\ulcorner, predominantly due to a parallel conduction via a heavily doped Al\ulcornerGa\ulcornerAs donor layer, was observed in PHEMT while the optically induced drain current has been very small but monotonically increasing with optical stimulation in GaAs MESFET. We also investigated differences in optically stimulated gate leakage currents and photonic gate responses on gate voltage and drain voltage as a function of P\ulcorner. Based on the drain and gate responses to electro-optical stimulation. PHEMTs are expected to be a better candidate for high performance photonically responsive microwave device compared with MESFETs.

• 반도체디스플레이기술학회지
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• 제8권2호
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• pp.59-62
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• 2009

In order to check the validation of LC simulation, 0.7 inch LCOS panel in full-HD resolution was fabricated and used for the electro-optical measurement. Compared the measured data with the calculated data, the averaged difference was 1.72% under 0 ~ +6 V bias on pixel electrode. To improve the optical characteristics of full-HD LCOS panel, the planar structure and trench structures (0.1 um, 0.2 um and 0.3 um-in-depth) between adjacent pixels were investigated with LC simulation. The planar structure showed the higher reflectance and faster reflectance-voltage response time than the trench structure. The optical fill factor and contrast ratio of planar structure were also higher than those of trench structures. As compared 1 um-in-depth trench structure resembled to the real structure with the planar structure, the optical fill factor was improved by 1.15% and the contrast ratio was improved by 5.26%. In order to minimize the loss of luminance and contrast ratio, the planar structure need to be applied between adjacent pixels.