• Korean Journal of Materials Research
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• v.12 no.4
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• pp.254-258
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• 2002

To realize channel cross-connecting in optical communications systems, a high speed optical matrix switch was fabricated using z-cut $LiNbO_3$. For switch fabrication was design bending structure and coupling length and four $2{\times}2$ directional couplers were integrated on one substrate far construction of a $4{\times}4$ switch. Single-mode optical waveguides were formed by Ti-diffusion at a wet $O_2$ atmosphere. Ti-diffusion profile, refractive index variation and waveguide morphology were analyzed by Prism coupler and optical microscopy, respectively.

• Proceedings of the KIEE Conference
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• 1993.07a
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• pp.460-463
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• 1993

In this paper, The laser transmitter module is designed as the subsystem of the high repetitive laser rangefinder. The module consists of high voltage power supply, high voltage control circuits, high voltage discharger, electro-optic Q-switch driver, and laser resonator. The high voltage power supply is composed of 2-phase flyback converter. And it has 220W power level and 78% conversion efficiency. From the Q-switch driver of the crossed porro resonator, the phase retardation voltage is switched from 600V to -1500V with 200ns falling time. The module can be operated up to 15Hz. And it generates the laser pulse which has 20ns width and 80mJ.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.2116-2118
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• 2000

In the technique of Q-switching, very fast electronically controlled optical shutters can be made by using the electro-optic effect in crystals or liquids. The driver for the Pockels cell must be a high-speed, high-voltage switch which also must deliver a sizeable current. Common switching techniques include the use of vacuum tubes, cold cathode tubes, thyratrons, SCRs, and avalanche transistors. Semiconductor devices such as SCRs, avalanche transistors, and MOSFETs have been successfully employed to drive Pockels cell Q-switch. In this study, a simple driver for the Pockels cell Q-switch was developed by using SCRs, pulse transformer and TTL ICs. The Pockels cell Q-switch which was operated by this driver was employed in pulsed Nd:YAG laser system to investigate the operating characteristics of this Q-switch. And we have investigated the output characteristics of this Q-switch as a function of the Q-switch delay time to Xe flashlamp current on.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.8
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• pp.153-165
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• 1995

The design procedure of a GaAs/AlGaAs semiconductor matrix optical switch is presented for a simplified tree architecture in the viewpoint of optical loss. A low loss, 0.537 dB/cm, pin type substrate is designed by considering the loss due to imputity doping at 1.3 $\mu$m wavelength. The operating voltage and the device length of a reversed ${\Delta}{\beta}$ electro-optic directional coupler(EODC) swith which is a cross-point device of the 4${\times}$4 matrix optical switch and the bending loss of rib waveguide are caculated as functions of waveguide parameters and bending parameters. There is an optimum bending radius for some waveguide parameters. It is recommened that higher optical confinement conditions such as wide waveguide width and higher rib-height should be chosen for structural parameters of a low loss and a process insensitive 4${\times}$4 matris optical switch. A 4${\times}$4 optical matrix switch which has a 3 dB loss and a 12 volt operating voltage is designed.

• Korean Journal of Optics and Photonics
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• v.7 no.4
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• pp.414-418
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• 1996

An electro-optic polymer digital optical switch was fabricated by using a photobleached waveguide and a self-aligned electrode. It features wavelength insensitive operation, fabrication tolerance and flexible design. And its possible advantages include low coupling losses to the fibers and wide bandwidths. For improving its switching performance, the guided mode profiles of the photobleached waveguides were controlled by photobleaching times to achieve optimized coupling in the branch. And the self-aligned electrode was employed to achieve both efficient overlap of the optical and electric fields and easy introduction of the adiabatically tapered electrodes. The measured crosstalks were better than -21dB at 1.32 ${\mu}{\textrm}{m}$ and 1.55 ${\mu}{\textrm}{m}$, and the extinction ratios of each output port were also more than 20 dB.

• Korean Journal of Optics and Photonics
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• v.8 no.3
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• pp.245-249
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• 1997

An electro-optic polymer digital optical switch with a coupling region modified for optimum coupling is designed and demonstrated. Its branch waveguide is fabricated by reactive ion etching. Then, the modified coupling region is adiabatically introduced along the propagation direction from the branching point of the two waveguides, and it is implemented by photobleaching after the device fabrication. The structure of the modified coupling region and its refractive index profiles are designed to optimize and mode coupling in the Y-branch waveguide. Therefore, the switching performance of the device was shown to be enhanced with a fixed device length. The measured drive voltage is reduced by more than 30 percents, and the crosstalk is also improved by about 4~6 dB.

• Korean Journal of Optics and Photonics
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• v.15 no.4
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• pp.385-390
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• 2004

In this paper, we designed a 4-bit optical true time-delay(TTD) for phased array antennas(PAAs), which is composed of a wavelength-fixed optical source, 2 ${\times}$ 2 optical MEMS switches, and fiber-optic delay lines. A 4-bit TTD with a unit time delay difference of 6 ps for 10-GHz PAAs has been implemented. Measurement results on time delay show an error of -0.4 ps at maximum, corresponding to a radiation angle error of less than 1.63$^{\circ}$. Thus, the TTD implemented in this research performs in excellent agreement with theory. Each TTD line, composed of MEMS switches and fiber-optic delay lines, connected to the corresponding antenna element has insertion loss in between 1.36 ㏈ and 2.40 ㏈ depending upon the setup of the switches. On the other hand, the insertion loss difference between TTD lines was 0.32 ㏈ at maximum for a fixed radiation angle. The TTD structure proposed in this paper might be more reliable and economical than those previously proposed using tunable wavelength sources if proper power equalization either with gain control of RF amplifiers or variable attenuators is achieved.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.2
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• pp.193-204
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• 1998

The single crystal of the $LiTaO_3$has large electro-optic effects, so it is applied to optical switch, acousto-optic deflector, and optical memory device as hologram using photorefractive effect. In this study, optic-grade undoped $LiTaO_3$and Fe:LiTaO$LiTaO_3$single crystals were grown by the Czochralski method and optical transmission and absorption spectrums were measured in the wavelength of UV-VIS range. The curie temperature was determined with DSC and by measuring capacitance for the grown undoped crystal and ceramic powder samples of various Li/Ta ratio. In case of having a 48.6 mol% $Li_2O$ as a starting Li/Ta ratio, the results of concentration variations were below 0.01 mol% $Li_2O$ all over the crystal, so it was confirmed that $LiTaO_3$single crystals were grown under congruent melting composition having optical homogeneity. The curie temperature of the Fe:$LiTaO_3$crystal was increased with increased with increased doped Fe concentrations;by the ratio of $7.5^{\circ}C$ increase per Fe 0.1 wt%. Also, the optical transmittance was about 78 %, which was sufficient for optical device.