• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.41 no.4
• /
• pp.41-47
• /
• 2004

In this paper, we analyze the microwave characteristics of traveling-wave electro-absorption modulator (TW-EAM) considering the microwave feedline and the impedance mismatch. The TW-EAM is analyzed by using the equivalent circuit model. The capacitance and the inductance of the equivalent circuit are evaluated by using 3-dimensional finite difference time domain (FDTD) method, while the microwave feedline is analyzed by momentum method. In a viewpoint of microwave characteristics, we present the effect of the structure and the length of microwave feedline.

• 한국정보통신설비학회:학술대회논문집
• /
• 2003.08a
• /
• pp.172-174
• /
• 2003

In this paper, we analyze the traveling-wave electro-absorption modulator (TW-EAM) in consideration of the microwave feed-line. The TW-EAM is analyzed by using the equivalent circuit model. The microwave feed-line isanalyzed by momentum method. In a view point of microwave characteristics, we present the effect of the structure and the length of microwave feed-line.

• Proceedings of the Optical Society of Korea Conference
• /
• 2000.02a
• /
• pp.270-271
• /
• 2000

Among many optical modulators, we are interested in traveling-wave(TW) multiple quantum well(MQW) electro-absorption modulator which can be used for wide-band applications, covering DC to 30GHz or higher frequencies. In this study, we simulate a 1.3mm InGaAs/lnGaAsP TW MQW EAM using the 3D Finite Difference-Time Domain (FDTD) method. We identify that several geometric factors affect Microwave charateristics. Our calculated data provide useful information to optimize and fabricate ridge-type TW CPW EAM.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2012.08a
• /
• pp.319-320
• /
• 2012

Large aperture optical modulator called optical shutter is a key component to realize time-of-flight (TOF) based three dimensional (3D) imaging systems [1-2]. The transmission type electro-absorption modulator (EAM) is a prime candidate for 3D imaging systems due to its advantages such as small size, high modulation performance [3], and ease of forming two dimensional (2D) array over large area [4]. In order to use the EAM for 3D imaging systems, it is crucial to remove GaAs substrate over large area so as to obtain high uniformity modulation performance at 850 nm. In this study, we propose and experimentally demonstrate techniques for backside etching of GaAs substrate over a large area having high uniformity. Various methods such as lapping and polishing, dry etching for anisotropic etching, and wet etching ([20%] C6H8O7 : H2O2 = 5:1) for high selectivity backside etching [5] are employed. A high transmittance of 80% over the large aperture area ($5{\times}5mm^2$) can be obtained with good uniformity through optimized backside etching method. These results reveal that the proposed methods for backside etching can etch the substrate over a large area with high uniformity, and the EAM fabricated by using backside etching method is an excellent candidate as optical shutter for 3D imaging systems.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2013.08a
• /
• pp.220-220
• /
• 2013

Surface-normal transmission electro-absorption modulator (EAM) are attractive for high-definition (HD) three-dimensional (3D) imaging application due to its features such as small system volume and simple epitaxial structure [1,2]. However, EAM in order to be used for HD 3D imaging system requires uniform modulation performance over large area. To achieve highly uniform modulation performance of EAM at the operating wavelength of 850 nm, it is extremely important to remove the GaAs substrate over large area since GaAs material has high absorption coefficient below 870 nm which corresponds to band-edge energy of GaAs (1.424 eV). In this study, we propose and experimentally demonstrate a transmission EAM in which highly selective backside etching methods which include lapping, dry etching and wet etching is carried out to remove the GaAs substrate for achieving highly uniform modulation performance. First, lapping process on GaAs substrate was carried out for different lapping speeds (5 rpm, 7 rpm, 10 rpm) and the thickness was measured over different areas of surface. For a lapping speed of 5 rpm, a highly uniform surface over a large area ($2{\times}1\;mm^2$) was obtained. Second, optimization of inductive coupled plasma-reactive ion etching (ICP-RIE) was carried out to achieve anisotropy and high etch rate. The dry etching carried out using a gas mixture of SiCl4 and Ar, each having a flow rate of 10 sccm and 40 sccm, respectively with an RF power of 50 W, ICP power of 400 W and chamber pressure of 2 mTorr was the optimum etching condition. Last, the rest of GaAs substrate was successfully removed by highly selective backside wet etching with pH adjusted solution of citric acid and hydrogen peroxide. Citric acid/hydrogen peroxide etching solution having a volume ratio of 5:1 was the best etching condition which provides not only high selectivity of 235:1 between GaAs and AlAs but also good etching profile [3]. The fabricated transmission EAM array have an amplitude modulation of more than 50% at the bias voltage of -9 V and maintains high uniformity of >90% over large area ($2{\times}1\;mm^2$). These results show that the fabricated transmission EAM with substrate removed is an excellent candidate to be used as an optical shutter for HD 3D imaging application.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.17 no.8
• /
• pp.1968-1973
• /
• 2013

We present the enhancement of narrowband modulation response of an optical source by integrating a dual-electrode distributed feedback (DFB) laser with an electro-absorption modulator (EAM). The dual-electrode DFB laser exhibits a multiple optical modes owing to a self-pulsation in GHz range. By modulating the laser and modulator sections of the integrated device simultaneously, 20-dB of narrowband modulation response enhancement at 6 GHz with 7-GHz tuning range has been observed.

• Journal of the Optical Society of Korea
• /
• v.19 no.4
• /
• pp.371-375
• /
• 2015

The impact of equivalent optical bandwidth on the performance of a system using a reflective electroabsorption modulator (R-EAM) based optical source has been experimentally evaluated with signals operating at 2.5 Gb/s and beyond. The equivalent optical bandwidth of our source with a broadband seed light was simply adjusted by using a bandwidth tunable optical filter. From the measurements, we have estimated the required equivalent optical bandwidth of our source for an error-free transmission (@ bit-error-rate of $10^{-12}$) and a forward error correction (FEC) threshold of $2{\times}10^{-4}$.

• ETRI Journal
• /
• v.28 no.4
• /
• pp.533-536
• /
• 2006

A distributed Bragg reflector (DBR) laser and a high speed electroabsorption modulator (EAM) are integrated on the basis of the selective area growth technique. The typical threshold current is 4 to 6 mA, and the side mode suppression ratio is over 40 dB with single mode operation at 1550 nm. The DBR laser exhibits 2.5 to 3.3 mW fiber output power at a laser gain current of 100 mA, and a modulator bias voltage of 0 V. The 3 dB bandwidth is 13 GHz. A 10 Gbps non-return to zero operation with 12 dB extinction ratio is obtained. A four-channel laser array with 100 GHz wavelength spacing was fabricated and its operation at the designed wavelength was confirmed.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.42 no.12
• /
• pp.53-62
• /
• 2005

This paper presents an interface configuration between the Access Point(AP) of Wibro and Radio Over Fiber(ROF) transceivers for the wireless broadband internet system. The wireless internet could provides 60km/h mobility and 50Mbps IP based data services for each mobile terminal. Thus, low cost of each cell is inevitably required. This paper suggests an interface configuration between AP and Passive Integrated Picocell(PIP) involving ROF links. Characteristics of a typical Fabry-Perot ROF link and a PIP using a passive Electro-Absorption Modulator(EAM) are described and measured for wireless internet applications. In addition, results of RF coverage of a PIP have been shown.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.43 no.9 s.351
• /
• pp.158-164
• /
• 2006

Mobile operators will face many challenges both economically and technically, as WLAN evolve through a bewildering number of different standards during the coming years. Potentially this will require several upgrades to the mobile infrastructure. A new approach for addressing these challenges is evaluated in this paper. It is based on a radio over fiber (RoF) technology that uses electro-absorption modulator (EAM) and optical single sideband (OSSB) modulation technique and it promises to provide solutions that will be transparent to changes in protocols and frequency of operation as well as reducing radio access infrastructure costs. This paper describes the development of prototype RoF system based on the 60GHz band CATV transport distribution system with EAM and the possibility of radio over fiber technology for use in the broadband convergence network (BcN) wireless access infrastructure.