• Proceedings of the Optical Society of Korea Conference
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• 1998.08a
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• pp.200-201
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• 1998

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.319-320
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• 2012

Large aperture optical modulator called optical shutter is a key component to realize time-of-flight (TOF) based three dimensional (3D) imaging systems [1-2]. The transmission type electro-absorption modulator (EAM) is a prime candidate for 3D imaging systems due to its advantages such as small size, high modulation performance [3], and ease of forming two dimensional (2D) array over large area [4]. In order to use the EAM for 3D imaging systems, it is crucial to remove GaAs substrate over large area so as to obtain high uniformity modulation performance at 850 nm. In this study, we propose and experimentally demonstrate techniques for backside etching of GaAs substrate over a large area having high uniformity. Various methods such as lapping and polishing, dry etching for anisotropic etching, and wet etching ([20%] C6H8O7 : H2O2 = 5:1) for high selectivity backside etching [5] are employed. A high transmittance of 80% over the large aperture area ($5{\times}5mm^2$) can be obtained with good uniformity through optimized backside etching method. These results reveal that the proposed methods for backside etching can etch the substrate over a large area with high uniformity, and the EAM fabricated by using backside etching method is an excellent candidate as optical shutter for 3D imaging systems.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.42 no.12
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• pp.53-62
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• 2005

This paper presents an interface configuration between the Access Point(AP) of Wibro and Radio Over Fiber(ROF) transceivers for the wireless broadband internet system. The wireless internet could provides 60km/h mobility and 50Mbps IP based data services for each mobile terminal. Thus, low cost of each cell is inevitably required. This paper suggests an interface configuration between AP and Passive Integrated Picocell(PIP) involving ROF links. Characteristics of a typical Fabry-Perot ROF link and a PIP using a passive Electro-Absorption Modulator(EAM) are described and measured for wireless internet applications. In addition, results of RF coverage of a PIP have been shown.

• Journal of Advanced Navigation Technology
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• v.8 no.2
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• pp.91-97
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• 2004

This paper presents the development of InGaAsP multiple quantum well asymmetric Fabry-Perot modulators(AFPM), which have a vertical structure and high performance and describes measurements of devices operating at 10GHz for next generation broadband wireless communication applications such as picocell systems. Advantages of the AFPM include low drive voltage, which is less than -2V, and -3dB coupling loss, good flatness of the frequency response and simple fiber alignment. A simple link demonstration has been introduced, resulting in 92dB/Hz spurious free dynamic range and 40dB inter-modulation distortion. This modulator could be use for broadband radio over fiber systems such as picocell and multiple RF links.

• Korean Journal of Optics and Photonics
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• v.7 no.3
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• pp.280-286
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• 1996

This paper describes operation mechanism of a novel optical waveguide phase modulator with optical bistability characteristics by self electro-optic effect. The fabricated device structure is an optical waveguide modulator, using a refractive index change by an applied electric field, parallel integrated with SEED with an electrical bistability. GaAs/AlGaAs MQW is used as the core layer of the waveguide modulator and the absorption layer of SEED. The absorbed optical power in SEED changes the diode voltage and controls the optical power propagating through the waveguide phase modulator. Optical bistability of waveguide phase modulator is experimentally obtained by using electrical bistability of SEED. Compared to other waveguide modulators, the proposed one has an asset that the lowest optical power is required to generate optical bistability.

• ETRI Journal
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• v.28 no.4
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• pp.533-536
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• 2006

A distributed Bragg reflector (DBR) laser and a high speed electroabsorption modulator (EAM) are integrated on the basis of the selective area growth technique. The typical threshold current is 4 to 6 mA, and the side mode suppression ratio is over 40 dB with single mode operation at 1550 nm. The DBR laser exhibits 2.5 to 3.3 mW fiber output power at a laser gain current of 100 mA, and a modulator bias voltage of 0 V. The 3 dB bandwidth is 13 GHz. A 10 Gbps non-return to zero operation with 12 dB extinction ratio is obtained. A four-channel laser array with 100 GHz wavelength spacing was fabricated and its operation at the designed wavelength was confirmed.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.220-220
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• 2013

Surface-normal transmission electro-absorption modulator (EAM) are attractive for high-definition (HD) three-dimensional (3D) imaging application due to its features such as small system volume and simple epitaxial structure [1,2]. However, EAM in order to be used for HD 3D imaging system requires uniform modulation performance over large area. To achieve highly uniform modulation performance of EAM at the operating wavelength of 850 nm, it is extremely important to remove the GaAs substrate over large area since GaAs material has high absorption coefficient below 870 nm which corresponds to band-edge energy of GaAs (1.424 eV). In this study, we propose and experimentally demonstrate a transmission EAM in which highly selective backside etching methods which include lapping, dry etching and wet etching is carried out to remove the GaAs substrate for achieving highly uniform modulation performance. First, lapping process on GaAs substrate was carried out for different lapping speeds (5 rpm, 7 rpm, 10 rpm) and the thickness was measured over different areas of surface. For a lapping speed of 5 rpm, a highly uniform surface over a large area ($2{\times}1\;mm^2$) was obtained. Second, optimization of inductive coupled plasma-reactive ion etching (ICP-RIE) was carried out to achieve anisotropy and high etch rate. The dry etching carried out using a gas mixture of SiCl4 and Ar, each having a flow rate of 10 sccm and 40 sccm, respectively with an RF power of 50 W, ICP power of 400 W and chamber pressure of 2 mTorr was the optimum etching condition. Last, the rest of GaAs substrate was successfully removed by highly selective backside wet etching with pH adjusted solution of citric acid and hydrogen peroxide. Citric acid/hydrogen peroxide etching solution having a volume ratio of 5:1 was the best etching condition which provides not only high selectivity of 235:1 between GaAs and AlAs but also good etching profile [3]. The fabricated transmission EAM array have an amplitude modulation of more than 50% at the bias voltage of -9 V and maintains high uniformity of >90% over large area ($2{\times}1\;mm^2$). These results show that the fabricated transmission EAM with substrate removed is an excellent candidate to be used as an optical shutter for HD 3D imaging application.

• ETRI Journal
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• v.26 no.6
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• pp.589-596
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• 2004

Packaging technologies for a broadband and narrowband modulator with a traveling wave electro-absorption modulator (TWEAM) device were developed. In developing a broadband modulator, the effects of the device and packaging designs on the broadband performance were investigated. The optimized designs were obtained through a simulation with the result that we developed a broadband modulator with a 3 dB bandwidth of 38 GHz in the electrical-to-optical (E/O) response, an electrical return loss of less than -10 dB at up to 26 GHz, an rms jitter of 1.832 ps, and an extinction ratio of 5.38 dB in a 40 Gbps non-return to zero (NRZ) eye diagram. For analog application, the effect of the RF termination scheme on the fractional bandwidth was studied. The microstrip line with a double stub as a matching circuit and a laser trimming process were used to obtain an $S_{11}$ of -34.58 dB at 40 GHz and 2.9 GHz bandwidth of less than -15 dB.

• Proceedings of the Optical Society of Korea Conference
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• 2001.02a
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• pp.156-157
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• 2001

전계 흡수 광 변조기는 우수한 소광비와 낮은 전력 소모로 넓은 대역폭을 확보할 수 있으며 LD와의 단일 집적인 EML(electro-absorption modulator integrated laser diode)의 제작도 용이하므로 Microwave-Photonics 시스템에 매우 적합한 소자로써 근래에 활발한 연구가 진행되어지고 있다. 전계 흡수 광 변조기의 대역폭을 최대한 확보하기 위해서는 진행하는 마이크로파의 위상속도와 광파의 그룹 속도가 정합 되어야 하며 소자의 임피던스가 50Ω에 정합 되어야 한다. (중략)

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.6
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• pp.20-32
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• 1997

An optimum parasitic inductance is observed for maximizing the modulation bandwidth of the multiple quantum well (MQW) electro-absorption optical modulator. For 1.1 pF device cpaacitance of the current MQW optical modulator, the optimum parasitic inductances for maximum bandwidth are calculated for different terminating resistors. In ase of 50.ohm. terminating resistor, the 3-dB modulation bandwidth can be increased 45% wider by using the optimum parasitic inductance than nothing parasitic inductance. This calculated optimum inductance can be practically implemented, since the parasitic inductance of bondwires can be accurately analyzed using the method of moments (MoM) and controlled by changing the length and shpae of bondwires.