• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2007.05a
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• pp.417-420
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• 2007

Micro parts are usually used of producing by micro-electro-mechanical systems(MEMS). In this paper, we present some fundamental results concerning on the MEMS, extrusion condition on the micro forming characteristics and new micro forward extrusion machine has been developed. In the first step, we manufactured micro dies in two kinds of sections. One is a circle section, another is a cross section. The process for fabricating micro dies combines a deep UV-lithography, anisotropic etching techniques and metal electroplating with bulk silicon based on Ni with a thickness of $50{\mu}m$. The outer diameter of Ni-micro dies is 3mm and the diameter of extrusion section is $270{\mu}m$ for a cross section, $500{\mu}m$ for a circle section. The low linear density polyethylene(LLEPD) in the shape of a pellet has been used of micro extrusion. The billet was placed in a container manufactured by electric discharge machining and extruded through the micro die by a piezoelectric actuator. The micro extrusion has succeeded in a forming such micro parts as micro bars, micro cross shafts.

• Journal of the Korean Ceramic Society
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• v.40 no.4
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• pp.385-392
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• 2003

Sol-gel preparation technique using a chemical reaction of metal alkoxides has been widely used for the fabrication of various materials including ceramics. However, its mechanism has been studied till now because a number of chemical ways are possible from various alkoxides and additives. In this study, the mechanism of hydrolysis, condensation, and polymerization of alkoxides were investigated from the fabrication of lead-zirconate-titanate (PbZr$\_$x/Ti$\_$l-x/O$_3$; PZT) thin film that is used as various micro-actuator, transducer, and sensor because of its high electro-mechanical coupling factors and thermal stability. Furthermore, the fabrication process and characteristics of self-patternable PZT film using photosensitive stabilizer were studied in order to resolve the problem of physical damage and properties degradation during dry etching for device fabrication. Using an optimum condition to prepare the self-patternable PZT film, more than 5000 ${\AA}$ thick self-patternable PZT film could be fabricated by three times coating. The PZT film showed 28.4 ${\mu}$c/cm$^2$ of remnant polarization (Pr) and 37.0 kV/cm of coercive field (E$\_$c/).

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.132-132
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• 2003

Second-order nonlinear optical(NLO) materials have been extensively studied for applications in photonic devices, such as frequency doubling and electro-optical(EO) modulation, because of their large optical nonlinearity, excellent processibility, low dielectric constant, and high laser damage thresholds. The poling behaviour of NLO chromophore in organic/inorganic matrixes showed the randomization of poled NLO chromophore in the absence of poling Held. The liquid crystal molecules in a droplet showed a long-range orientational order along a director. Therefore, liquid crystal effects on poling behaviour of NLO chromophore dispersed in organically modified inorganic sol-gel materials were investigated. Using sol-gel process for the development of NLO material has received increasing attention, Organically modifked inorganic NLO sol-Eel materials are obtained via incorporation of the organic NLO active chromophore into an alkoxysilane based inorganic network. One of the most important thing in this works was that tetraethoxysilane(TEOS) and methyltrimathoxysilane(HTMS) were used as precursor followed by hydrolysis and condensation without using any acidic catalyst during the process. The NLO chromophores in the liquid crystal nanodomains were well mixed with I/O hybrid matrix, deposited on transparent ITO-coated glasses. The poling behaviour of liquid crystal effects of NLO chromophore dispersed in I/O hybrid matrix were investigated by UV-vis spectroscopy. Size distribution and morphology of the NLO chromophores doped in the liquid crystal nanodomains dispersed in I/O hybrid matrix were investigated by SEM.

• Journal of Environmental Science International
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• v.19 no.9
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• pp.1143-1152
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• 2010

The purpose of this study is to degradation of Rhodamine B (RhB, dye) and N, N-Dimethyl-4-nitrosoaniline (RNO, indicator of the electro-generation of OH radical) in solution using boron doped diamond (BDD) electrode. The effects of applied current (0.2~1.0 A), electrolyte type (NaCl, KCl, and $Na_2SO_4$) and electrolyte concentration (0.5~3.0 g/L), solution pH (3~11) and air flow rate (0~4 L/min) were evaluated. Experimental results showed that RhB and RNO removal tendencies appeared with the almost similar thing, except of current. Optimum current for RhB degradation was 0.6 A, however, RNO degradations was increased with increase of applied current. The RhB and RNO degradation of Cl type electrolyte were higher than that of the sulfate type. The RhB and RNO degradation were increased with increase of NaCl concentration and optimum NaCl dosage was 2.5 g/L. The RhB and RNO concentrations were not influenced by pH under pH 7. Optimum air flow rate for the oxidants generation and RhB and RNO degradation were 2 L/min. Initial removal rate of electrolysis process was expressed Langmuir - Hinshelwood equation, which is used to express the initial removal rate of UV/$TiO_$2 process.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.382-382
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• 2012

CIGS thin films have received great attention as a promising material for solar cells due to their high absorption coefficient, appropriate bandgap, long-term stability, and low cost production. CIGS thin films are deposited by various methods such as co-evaporation, sputtering, spray pyrolysis and electro-deposition. The deposition technique is one of the most important processes in preparing CIGS thin film solar cells. Among these methods, co-evaporation is one of the best technique for obtaining high quality and stoichiometric CIGS films. However, co-evaporation method is known to be unsuitable for commercialization. The sputtering is known to be very effective and feasible process for mass production. In this study, CIGS thin films have prepared by rf magnetron sputtering using a $Cu(In_{1-x}Ga_x)Se_2$ single quaternary target without post deposition selenization. This process has been examined by the effects of deposition parameters on the structural and compositional properties of the films. In addition, we will explore the influences of substrate temperature and additional annealing treatment after deposition on the characteristics of CIGS thin films. The thickness of CIGS films will be measured by Tencor-P1 profiler. The crystalline properties and surface morphology of the films will be analyzed using X-ray diffraction and scanning electron microscopy, respectively. The optical properties of the films will be determined by UV-Visible spectroscopy. Electrical properties of the films will be measured using van der Pauw geometry and Hall effect measurement at room temperature using indium ohmic contacts.

• Applied Chemistry for Engineering
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• v.35 no.4
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• pp.296-302
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• 2024

An ionic conjugated polymer-iron (III) chloride composite was prepared via in-situ quaternization polymerization of 2-ethynylpyridine (2EP) using iron (III) chloride. Various instrumental methods revealed that the chemical structure of the resulting conjugated polymer (P2EP)-iron (III) chloride composite has the conjugated backbone system having the designed pyridinium ferric chloride complexes. The polymerization mechanism was assumed to be that the activated triple bond of 2-ethynylpyridinium salt, formed at the first reaction step, is easily susceptible to the step-wise polymerization, followed by the same propagation step that contains the propagating macroanion and monomeric 2-ethynylpyridinium salts. The electro-optical and electrochemical properties of the P2EP-FeCl₃ composite were studied. In the UV-visible spectra of P2EP-FeCl₃ composite, the absorption maximum values were 480 nm and 533 nm, and the PL maximum value was 598 nm. The cyclic voltammograms of the P2EP-FeCl₃ composite exhibited irreversible electrochemical behavior between the oxidation and reduction peaks. The kinetics of the redox process of composites were found to be very close to a diffusion-controlled process from the plot of the oxidation current density versus the scan rate.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.97-97
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• 2013

Recently, Cu2ZnSn(S,Se)4 (CZTSS), which is one of the In- and Ga- free absorber materials, has been attracted considerable attention as a new candidate for use as an absorber material in thin film solar cells. The CZTSS-based absorber material has outstanding characteristics such as band gap energy of 1.0 eV to 1.5 eV, high absorption coefficient on the order of 104 cm-1, and high theoretical conversion efficiency of 32.2% in thin film solar cells. Despite these promising characteristics, research into CZTSS based thin film solar cells is still incomprehensive and related reports are quite few compared to those for CIGS thin film solar cells, which show high efficiency of over 20%. I will briefly overview the recent technological development of CZTSS thin film solar cells and then introduce our research results mainly related to sputter based process. CZTSS thin film solar cells are prepared by sulfurization of stacked both metallic and sulfide precursors. Sulfurization process was performed in both furnace annealing system and rapid thermal processing system using S powder as well as 5% diluted H2S gas source at various annealing temperatures ranging from $520^{\circ}C$ to $580^{\circ}C$. Structural, optical, microstructural, and electrical properties of absorber layers were characterized using XRD, SEM, TEM, UV-Vis spectroscopy, Hall-measurement, TRPL, etc. The effects of processing parameters, such as composition ratio, sulfurization pressure, and sulfurization temperature on the properties of CZTSS absorber layers will be discussed in detail. CZTSS thin film solar cell fabricated using metallic precursors shows maximum cell efficiency of 6.9% with Jsc of 25.2 mA/cm2, Voc of 469 mV, and fill factor of 59.1% and CZTS thin film solar cell using sulfide precursors shows that of 4.5% with Jsc of 19.8 mA/cm2, Voc of 492 mV, and fill factor of 46.2%. In addition, other research activities in our lab related to the formation of CZTS absorber layers using solution based processes such as electro-deposition, chemical solution deposition, nano-particle formation will be introduced briefly.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.269-270
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• 2009

The biased vertical alignment (BVA) liquid crystal (LC) mode shows a has a distinct advantage of lower manufacture cost due to the elimination of a lithographic process step to form either ITO-patterning or protrusions on the color-filter substrates. However, those devices have complex voltage conditions which is the respective induce voltage on common electrode, pixel electrode and bias electrode when positive and negative frame. In order to overcome the complex voltage condition, the pretilt angles is controlled by photo polymerization of the UV-curable reactive mesogen (RM). According to our studies, voltages to the cell are critical to achieve an optimized surface-modified quality BVA (Q-BVA) mode which provides the well defined reorientation of the LCs with respect to an electric field.