• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 추계학술대회 논문집 학회본부
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• pp.357-360
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• 1997

Currently, there is a need for the development of an advanced new technology for Low-and Intermediate-Level Radioactive Waste (LILW) treatment from nuclear power plants. The vitrification and melting technology by the use of the electrical equipments such as induction heater and plasma torch based furnace, along with off-gas treatment are considered as the most promising one of the LILW treatment technology since they can produce a very stable waste forms as well as considerably large volume reduction, which is a world-wide trend to apply for radioactive waste treatment. Korea Electric Power Research Institute(KEPRI) has already completed a feasibility study on LILW treatment and conceptual system design of a demonstration plant to be constructed. For this research, KEPRI selected a cold crucible melter(CCM) for the vitrification of combustible waste, and plasma torch based furnace(PT) for the melting of noncombustible waste, along with off-gas treatment for the volatile radioisotopes such as cesium.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.206-207
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• 2005

Display 소재로서 유전체나 격벽재 실링재로 사용되고 있는 frit는 PbO를 주성분으로 갖는 유리가 사용되고 있다. PbO 성분이 함유된(50$\sim$85%) 구성소재는 최근 RoHS 나 WEEE 등의 환경규제 실행에 직면해 있으며, 대체재료의 개발을 위한 많은 연구가 진행되고 있다 PbO 성분을 대체할 성분으로는 $Bi_2O_3$ 계, BaO-ZnO 계, $P_2O_5$ 계 등의 성분이 주요성분으로 이루어져 있으며, PbO 성분을 함유한 유리의 저융점, 저유전율, 고 투과율, 내산성, 내전압, 팽창계수 matching 등의 특성들에 부합되는 재료를 개발하기 위해 많은 노력을 기울이고 있다. 본 연구에서는 SnO-$P_2O_5$ 계 유리 조성을 선택하여 $R_2O_3$의 치환 및 용융분위기의 조절에 따른 저융점 유리로서의 특성과 효과에 대하여 고찰하였다.

• Transactions on Electrical and Electronic Materials
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• 제5권2호
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• pp.55-60
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• 2004

High-temperature Superconductor(HTS) tubes were fabricated in terms of different chemical compositions and various SrSO$_4$additions by centrifugal forming method. For powder melting by induction the optimum range of melting temperatures and preheating temperature were 1050$^{\circ}C$, 1100$^{\circ}C$ and 550$^{\circ}C$ for 30 min, respectively. The mould rotating speed was 1000 rpm. A tube was annealed at 840$^{\circ}C$ for 72 hours in oxygen atmosphere. The plates like grains more than 20 $\mu\textrm{m}$ were well developed along the rotating direction of mould regardless of initial chemical compositions and the amounts of SrSO$_4$in Bi2212. The specimen with Bi2212 composition exhibited T$\_$c/ of 83 K, while the specimens fabricated with other compositions are lower than 60 K. The measured I$\_$c/ and J$\_$c/ at 77 K(B = 0 T) in Bi2212 with 7 % SrSO$_4$ composition were about 680 A and 380 A/$\textrm{cm}^2$.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권12호
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• pp.570-575
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• 2006

In this paper, we have investigated thermal properties by changing the content of carbon nanotube, which is component part of semiconductive shield in underground power transmission cable. Heat capacity (${\Delta}H$), glass transition temperature (Tg) and melting temperature (Tm) were measured with the samples of eight, through DSC (Differential Scanning Calorimetry), and the measurement ranges of temperature selected from $-100[^{\circ}C]\;to\;100[^{\circ}C]$ with heating temperature selected per $4[^{\circ}C/min]$ Also, high temperature, heat degradation initiation temperature, and heat weight loss were measured by TGA (Thermogravimetric Analysis) in the temperature from $0[^{\circ}C]\;to\;700[^{\circ}C]$ with rising temperature of $10[^{\circ}C/min]$. As a result, the Glass transition temperatures of the sample were showed near $-20[^{\circ}C]{\sim}25[^{\circ}C]$, and the heat capacity and melting temperature from the DSC was increased according to increasing the content of carbon nanotube, while, thermal diffusivity was increased according to increasing the content of carbon nanotube. Also, heat degradation initiation temperature from the TGA results was increasing according to increasing the content of carbon nanotube with CNT/EEA. Therefore, heat stabilities of EVA, which contained the we VA (vinyl acetate), showed the lowest.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.545-545
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• 2007

Recently, innovative process has been investigated in order to replace the conventional high-cost micro patterning processes on the electronic products. To produce desirable profit margins from this low cost products, printed circuit board(PCB), will require dramatic changes in the current manufacturing philosophies and processes. Innovative process using metal nano particles replaces the current industry standard of subtractive etched of copper as a highly efficient way to produce robust circuitry on low cost substrates. An advantage of using metal nano particles process in patterned conductive line manufacturing is that the process is additive. Material is only deposited in desired locations, thereby reducing the amount of chemical and material waste. Simply, it just draws on the substrate as glass epoxy or polyimide with metal nano particles. Particles, when their size becomes nano-meter scale, show some specific characteristics such as enhanced reactivity of surface atoms, decrease in melting point, high electric conductivity compared with the bulk. Melting temperature of metal gets low, the metal nano particles could be formated onto polymer substrates and sintered under $300^{\circ}C$, which would be applied in PCB. It can be getting the metal line of excellent electric conductivity.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.69-72
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• 1999

A Well oriented Bi$_2$re$_2$CaCu$_2$O$\sub$8/(Bi2212) superconductor thick films were formed successfully on a copper substrate by liquid reaction between a Cu-free precursor and Cu tape using method in which Cu-free BSCO powder mixture was printed on copper plate and heat-treated. And we examined the mechanism for the rapid formation of Bi2212 superconducting films from observing the surface microstructure with heat-treatment time. At heat-treatment temperature, the printing layer partially melt by reacting with CuO of the oxidizing copper plate, and the nonsuperconducting phases present in the melt are typically Bi-free phases and Cu-free phases. Following the partial melting, the Bi$_2$Sr$_2$CaCu$_2$O$\sub$8/ superconducting phase is formed at Bi-free phase/liquid interface by nucleation and grows. It was confirmed that the phase colony from the phase diagram of Bi$_2$O$_3$-(SrO+CaO)/2-CuO system is similar to the observed result.

• 한국전기전자재료학회논문지
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• 제22권10호
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• pp.860-863
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• 2009

YBCO bulks with fine $Y_2BaCuO_5$(Y211) particles have been prepared by the top-seed modified powder melting process method, Solid-Liquid Melt Growth(SLMG), with $Y_2O_3$, $BaCuO_2$ and CuO mixing precursor. By using $Y_2O_3$ instead of $Y_2BaCuO_5$ as precursor, the processing became to be simpler and cheaper than the current powder melting process. The microstructures, trapped field and critical current density of the various conditioned YBCO bulks have been analyzed and the effect of Pt additive was studied. The different trapped magnetic field values of the several samples have been explained in the viewpoint of their microstructures. The fabrication of large-sized YBCO single domain has been conducted.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.376-376
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• 2012

Semiconductor nanowires (NWs) are future building block for nano-scale devices. Especially, Ge NWs are fascinated material due to the high electrical conductivity with high carrier mobility. It is strong candidate material for post-CMOS technology. However, thermal stability of Ge NWs are poor than conventional semiconductor material such as Si. Especially, when it reduced size as small as nano-scale it will be melted around CMOS process temperature due to the melting point depression. Recently, Graphene have been intensively interested since it has high carrier mobility with single atomic thickness. In addition, it is chemically very stable due to the $sp^2$ hybridization. Graphene films shows good protecting layer for oxidation resistance and corrosion resistance of metal surface using its chemical properties. Recently, we successfully demonstrated CVD growth of monolayer graphene using Ge catalyst. Using our growth method, we synthesized Ge/graphene core/shell (Ge@G) NW and conducted it for highly thermal stability required devices. We confirm the existence of graphene shell and morphology of NWs using SEM, TEM and Raman spectra. SEM and TEM images clearly show very thin graphene shell. We annealed NWs in vacuum at high temperature. Our results indicated that surface melting phenomena of Ge NWs due to the high surface energy from curvature of NWs start around $550^{\circ}C$ which is $270^{\circ}C$ lower than bulk melting point. When we increases annealing temperature, tip of Ge NWs start to make sphere shape in order to reduce its surface energy. On the contrary, Ge@G NWs prevent surface melting of Ge NWs and no Ge spheres generated. Furthermore, we fabricated filed emission devices using pure Ge NWs and Ge@G NWs. Compare with pure Ge NWs, graphene protected Ge NWs show enhancement of reliability. This growth approach serves a thermal stability enhancement of semiconductor NWs.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1792-1794
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• 1999

PVDF(Polyvinylidene Fluoride) thin films were prepared by using a physical vapor deposition system. Thin films were studied by X-ray diffraction (XRD), differential scanning calorimeter (DSC). The melting point$(T_m)$ of PVDF thin films increases with increasing substrate temperature. It is found that the degree of crystallinity of PVDF thin films increases from 49.8 to 67% with increasing substrate temperature from 30 to $80^{\circ}C$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1995년도 하계학술대회 논문집 C
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• pp.1187-1189
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• 1995

The paper is concerned with the pre-arcing behavior of rapid current limiting fuselink using copper as a melting element. The phenomenon is faced by a numerical simulation(especially, FDM is applicated) of the melting element. Through the results, we can know the trends of the I-t characteristics and temperature distribution along the x axis for different fuselink shapes with circular, rectangular, and skew restriction type respectively, to be good for designing the optimal element.