• Journal of Electrical Engineering and Technology
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• v.11 no.3
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• pp.781-789
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• 2016

Busbar has been used as electric conductor within extra high voltage (EHV) gas insulated switchgear (GIS), which makes EHV GIS higher security, smaller size and lower cost. However, the main fault of GIS is overheating of busbar connection parts, circuit breaker and isolating switch contact parts, which has been already restricting development of GIS to a large extent. In this study, a coupled magneto-flow-thermal analysis is used to investigate the thermal properties of GIS busbar in steady-state. A three-dimensional (3-D) finite element model (FEM) is built to calculate multiphysics fields including electromagnetic field, flow field and thermal field in steady-state. The influences of current on the magnetic flux density, flow velocity and heat distribution has been investigated. Temperature differences of inner wall and outer wall are investigated for busbar tank and conducting rod. Considering the end effect in the busbar, temperature rise difference is compared between end sections and the middle section. In order to obtain better heat dissipation effect, diameters of conductor and tank are optimized based on temperature rise simulation results. Temperature rise tests have been done to validate the 3-D simulation model, which is observed a good correlation with the simulation results. This study provides technical support for optimized structure of the EHV GIS busbar.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.238-239
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• 2010

Dimethyl sulphoxide (DMSO) is one of the widely-used secondary dopants in order to enhance the conductivity of poly(3, 4-ethylenedioxy-thiophene):poly(styrene sulfonate) (PEDOT:PSS) film. In this work, we investigated the effect of DMSO doping in to PEDOT:PSS on the electrical performance of the bulk heterojunction photovoltaics consisting of poly(3-hexylthiophene-2, 5-diyl) and phenyl-C61-butyric acid methyl ester. Correlation between the power conversion efficiency and the mechanism of improving conductivity, surface morphology, and contact properties was examined. The PEDOT:PSS films, which contain different concentration of DMSO, have been prepared and annealed at different annealing temperatures. The mixture of DMSO and PEDOT:PSS was prepared with a ratio of 1%, 5%, 15%, 25%, 35%, 45%, 55% by volume of DMSO, respectively. The DMSO-contained PEDOT:PSS solutions were stirred for 1hr at $40^{\circ}C$, then spin-coated on the ultra-sonicated glass. The spin-coated films were baked for 10min at $65^{\circ}C$, $85^{\circ}C$, and $120^{\circ}C$ in air. In order to investigate the electrical performance, P3HT:PCBM blended film was deposited with thickness of 150nm on DMSO-doped PEDOT:PSS layer. After depositing 100nm of Al, the device was post-annealed for 30min at $120^{\circ}C$ in vacuum. The fabricated cells, in this study, have been characterized by using several techniques such as UV-Visible spectrum, 4-point probe, J-V characteristics, and atomic force microscopy (AFM). The power conversion efficiency (AM 1.5G conditions) was increased from 0.91% to 2.35% by tuning DMSO doping ratio and annealing temperature. It is believed that the improved power conversion efficiency of the photovoltaics is attributed to the increased conductivity, leading to increasing short-circuit current in DMSO-doped PEDOT:PSS layer.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.38 no.4
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• pp.307-315
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• 1989

In this paper, we have analyzed the temperature variation trend of a slab on between the process of reheating furnace and the termination of roughing mill process during hot rolling process. 1) cooling by radiation and convection current in the air, 2) plastic deformation heat, 3) cooling by descaling water, 4) cooling by contact with rolling rolls and/or transmitting rolls. For the analysis, the factors have been adopted as the problems of the rolling process to be solved such that we have established an application technique in relation to the determination of boundary conditions on the slab surface. We have presented a procedure for an analysis of the cooling phenomenon treated as a problem of two-dimensional transient heat flow using finite difference equation and suggested techniques of implementing sequentialized rolling tasks in correlation with the procedure. From the result of simulation, it is shown that the difference between calculation value and measurement value is within the range of the industrial measurement error. Also, it is proved that the assumptions, conditions, and properties used in the computer simulation is appropriate by showing that the pattern of a drop in temperature at each rolling event is in accord with real circumstances.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.51-54
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• 2002

폴리머 애자용 Shed 재료의 전기방전에 대한 열화내성과 표면발수성은 제품의 장기성능에 있어서 가장 중요한 물성들이다. 그러나 무기보강재의 첨가량이 많아 무결점 성형성을 만족하도록 하기 위해서 Process Oil의 사용이 불가피한데 사용하는 오일의 종류와 양에 따라 옥외절연물의 장기성능에 영향을 주는 표면발수성이나 방전내성은 크게 차이가 나는 것으로 밝혀져 있다. 본 논문에서는 화학적 구조와 점도가 다른 몇 종의 hydroxy silicone oil(HS 오일)을 혼련 (kneading) 하는 과정에 첨가하여 이들 오일의 종류와 양이 고무의 기본적인 물성, 발수성, 방전열화내성， 내트래킹성 등에 어떻게 영향을 주는가를 조사하였다. 코로나 처리시간에 따라서 접촉각의 저하정도와 코로나 처리 후 경과시간에 따른 발수성의 회복특성을 조사하였다. HS 오일의 접도에 따라 초기발수성, 발수성 회복특성의 차이가 많았다. 점도가 낮을수록 초기 발수성 저하는 크며 회복속도는 빠른 반면 점도가 높을수록 초기 발수성 저하는 작은 반변은 발수성 회복속도는 다소 느리게 나타났다 내트래킹성 결과는 점도가 높을수록 우수한 특성을 보였다. 결론적으로 폴리머 애자용 실리콘고무의 컴파운딩에서 실리콘오일의 선택은 성형작업성, 발수성회복특성, 열화내성 외에 가격 등을 고려하여 최적화가 필요하다.

• Korean Journal of Materials Research
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• v.5 no.6
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• pp.627-632
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• 1995

W-Cu composites utilize the high electrical conductivity of copper and arc erosion resistance of tungsten to provide properties better suited to electrical contact applications than either tungsten or copper alone. W-Cu composite materials were milled in an attritor with an impeller speed of 300rpm for various milling times. The milled powders were compacted at 300MPa into cylinders, 16m in diameter, and approximately 4m high. Sintering was performed in dry H$_2$at temperature ranging from 1200$^{\circ}C$ to 1400$^{\circ}C$. Samples were sectioned and were polished for scanning electron microscopy (SEM) of microstructures. Homogeneous W-Cu composites were formed after 10 hours mechanical alloying and could be attained 99% density at 1330$^{\circ}C$. As mechanical alloying time increased, Fe-concentration was increased linearly. Intermetallic compound formation interupted the growth of W particles Increased hardness.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.9
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• pp.835-843
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• 2008

We have fabricated the source-drain electrodes for OTFTs by screen printing method and manufactured Ag pastes as conductive paste. To obtain excellent conductivity and screen-printability of Ag pastes, the dispersion characteristics of Ag pastes prepared from two types of acryl resins with different molecular structures and Ag powder treated with caprylic acid, triethanol amine and dodecane thiol as surfactant respectively were investigated. The Ag pastes containing Ag powder treated with dodecane thiol having thiol as anchor group or AA4123 with carboxyl group(COOH) of hydrophilic group as binder resin exhibited excellent dispersity. But, Ag pastes(CA-41, TA-41, DT-41) prepared from AA4123 fabricated the insulating layer since the strong interaction between surface of Ag powder and carboxyl group(COOH) of AA4123 interfered with the formation of conduction path among Ag powders. The viscosity behavior of Ag pastes exhibited shear-thinning flow in the high shear rate range and the pastes with bad dispersion characteristic demonstrated higher shear-thinning index than those with good dispersity due to the weak flocculated network structure. The output curve of OTFT device with a channel length of 107 ${\mu}m$ using screen-printed S-D electrodes from DT-30 showed good saturation behavior and no significant contact resistance. And this device exhibited a saturation mobility of $4.0{\times}10^{-3}$ $cm^2/Vs$, on/off current ratio of about $10^5$ and a threshold voltage of about 0.7 V.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.196.2-196.2
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• 2013

본 연구에서는 분자선 에피택시 (MBE)법으로 성장된 InAs submonolayer quantum dot (SML-QD)을 태양전지에 응용하여 광학 및 전기적 특성을 평가하였다. 본 연구에서 사용된 양자점 태양전지(quantum dot solar cell, QDSC)의 구조는 n+-GaAs 기판 위에 n+-GaAs buffer와 n-GaAs base layer를 차례로 성장 한 후, 활성영역에 InAs/InGaAs SML-QD와 n-GaAs spacer layer를 8주기 형성하였다. 그 위에 p+-GaAs emitter, p+-AlGaAs window layer를 성장하고 ohmic contact을 위하여 p+-GaAs 를 성장하였다. SML-QD 구조의 두께는 0.3 ML 이며, 이때 SML-QD의 적층수를 4 stacks 으로 고정하였다. SML-QD 와의 비교를 위하여 2.0 ML크기의 InAs자발 형성 양자점 태양전지(SK-QDSC)과 GaAs 단일 접합 태양전지 (reference-SC)를 동일한 성장조건에서 제작하였다. PL 측정 결과, 300 K에서 SML-QD의 발광 피크는 SK-QD 보다 고에너지에서 나타나는데(1.349 eV), 이것은 SML-QD가 SK-QD보다 작은 크기를 가지기 때문으로 사료된다. SML-QD는 single peak를 보이는 반면, SK-QD는 dual peaks (1.112 / 1.056 eV)을 확인하였다. SML-QD의 반치폭(full width at half maximum, FWHM)이 SK-QD에 비하여 작은 것으로 보아 SML-QD가 SK-QD보다 양자점 크기 분포의 균일도가 높은 것으로 해석된다. Illumination I-V 측정 결과, SML-QDSC의 개방 전압(VOC) 과 단락전류밀도(JSC)는 SK-QDSC의 값과 비교해 보면, 각각 47 mV와 0.88 mA/cm2만큼 증가하였다. 이는 SK-QD보다 상대적으로 작은 크기를 가진 SML-QD로 인해 VOC가 증가되었으며, SML-QD가 SK-QD 보다 태양광을 흡수할 수 있는 영역이 비교적 적지만, QD내에 존재하는 energy level에서 탈출 할 수 있는 확률이 더 높음으로써 JSC가 증가한 것으로 분석 된다.

• Tribology and Lubricants
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• v.38 no.3
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• pp.93-100
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• 2022

Micro-light emitting diode (micro-LED) displays offer numerous advantages such as high brightness, fast response, and low power consumption. Hence, they are spotlighted as the next-generation display. However, defective LEDs may be created due to non-uniform contact loads or LED alignment errors. Therefore, a repair process involving the replacement of defective LEDs with favorable ones is necessitated. The general repair process involves the removal of defective micro-LEDs, interconnection material transfer, as well as new micro-LED transfer and bonding. However, micro-LEDs are difficult to repair since their size decreases to a few tens of micron in width and less than 10 ㎛ in thickness. The conventional nozzle-type dispenser for fluxes and the conventional vacuum chuck for LEDs are not applicable to the micro-LED repair process. In this study, transfer conditions are determined using a micro stamp for repairing micro-LEDs. Results show that the aging time should be set to within 60 min, based on measuring the aging time of the flux. Additionally, the micro-LEDs are subjected to a compression test, and the result shows that they should be transferred under 18.4 MPa. Finally, the I-V curves of micro-LEDs processed by the laser and hot plate reflows are measured to compare the electrical properties of the micro-LEDs based on the reflow methods. It was confirmed that the micro-LEDs processed by the laser reflow show similar electrical performance with that processed by the hot plate reflow. The results can provide guidance for the repair of micro-LEDs using micro stamps.

• Korean Journal of Materials Research
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• v.21 no.9
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• pp.497-501
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• 2011

The CdS thin film used as a window layer in the CdTe thin film solar cell transports photo-generated electrons to the front contact and forms a p-n junction with the CdTe layer. This is why the electrical, optical, and surface properties of the CdS thin film influence the efficiency of the CdTe thin film solar cell. When CdTe thin film solar cells are fabricated, a heat treatment is done to improve the qualities of the CdS thin films. Of the many types of heat treatments, the $CdCl_2$ heat treatment is most widely used because the grain size in CdS thin films increases and interdiffusion between the CdS and the CdTe layer is prevented by the heat treatment. To investigate the changes in the electrical, optical, and surface properties and the crystallinity of the CdS thin films due to heat treatment, CdS thin films were deposited on FTO/glass substrates by the rf magnetron sputtering technique, and then a $CdCl_2$ heat treatment was carried out. After the $CdCl_2$ heat treatment, the clustershaped grains in the CdS thin film increased in size and their boundaries became faint. XRD results show that the crystallinity improved and the crystalline size increased from 15 to 42 nm. The resistivity of the CdS single layer decreased from 3.87 to 0.26 ${\Omega}cm$, and the transmittance in the visible region increased from 64% to 74%.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.119-119
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• 2011

This study examined the synthesis of large area graphene and the change of its characteristics depending on the ratio of CH4/H2 by using the thermal CVD methods and performed the experiments to control the electron-hole conduction and Dirac-point of graphene by using chemical doping methods. Firstly, with regard to the characteristics of the large area graphene depending on the ratio of CH4/H2, hydrophobic characteristics of the graphene changed to hydrophilic characteristics as the ratio of CH4/H2 reduces. The angle of contact also increased to 78$^{\circ}$ from 58$^{\circ}$. According to the results of Raman spectroscopy showing the degree of defect, the ratio of I(D)/I(G) increases to 0.42% from 0.25% and the surface resistance also increased to 950 ${\Omega}$ from 750 ${\Omega}$/sq. As for the graphene synthesis at the high temperature of 1,000$^{\circ}$ by using CH4/H2 in a Cu-Foil, the possibility of graphene formation was determined as a function of the ratio of H2 included in the fixed quantity of CH4 as per specifications of every equipment. It was observed that the excessive amount of H2 prevented graphene from forming, as extra H-atoms and molecules activated the reaction to C-bond of graphene. Secondly, in the experiment for the electron-hole conduction and the Dirac-point of graphene using the chemical doping method, the shift of Dirac-point and the change in the electron-hole conduction were observed for both the N-type (PEI) and the P-type (Diazonium) dopings. The ID-VG results show that, for the N-type (PEI) doped graphene, Dirac-point shifted to the left (-voltage direction) by 90V at an hour and by 130 V at 2 hours respectively, compared to the pristine graphene. Carrier mobility was also reduced by 1,600 cm2/Vs (1 hour) and 1,100 cm2/Vs (2 hours), compared to the maximum hole mobility of the pristine graphene.