• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.1930-1932
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• 2005

Colloidal Silica(CS)/methyltrimethoxy silane(MTMS) and CS/MTMS/epoxy silane(Es) sol solutions were prepared in variation with synthesizing parameters such as kinds of CS, kinds of silane and reaction time. In order to understand its physical and chemical properties, sol-gel coating films on glass were fabricated. In the case of CS/MTMS sol, the coating films had high contact angle and more enhanced flat surface than those in the case of CS/MTMS/ES sol. Also, the coating films obtained from single CS had a better flat surface than those obtained from mixed CS. In the case of thermal stability, thermal dissociation of CS/MTMS and CS/MTMS/ES sol-gel coating films did not occur up to $550^{\circ}C$ and $440^{\circ}C$ respectively. The thickness of coating films obtained from CS/MTMS sol increased than those of CS/MTMS/ES sol. In addition, the coating films obtained from single CS were more thicker than those obtained from mixed CS.

• Korean Journal of Metals and Materials
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• v.49 no.2
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• pp.187-191
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• 2011

In order to obtain a suitable back contacting electrode for $Cu(InGa)Se_2$-based photovoltaic devices, a molybdenum thin film was deposited using a chemical vapor transport (CVT) during the hydrogen reduction of $MoO_3$ powder. A $MoO_2$ thin film was successfully deposited on substrates by using the CVT of volatile $MoO_3(OH)_2$ at $550^{\circ}C$ for 60 min in a $H_2$ atmosphere. The Mo thin film was obtained by reduction of $MoO_2$ at $650^{\circ}C$ in a $H_2$ atmosphere. The Mo thin film on the substrate presented a low sheet resistance of approximately $1{\Omega}/sq$.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.20 no.7
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• pp.16-19
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• 2019

A thinner film has superior electrical properties and a better amorphous structure. Amorphous structures can be effective in improving conductivity through a depletion effect. Research is needed on the Schottky contact, where potential barriers are formed, as a way to identify these characteristics. $SiO_2/SnO_2$ thin films were prepared to examine the amorphous structure and Schottky contact, $SiO_2$ thin films were prepared using Ar = 20 sccm. $SnO_2$ thin films were deposited using mixed gas with a flow rate of argon and oxygen at 20 sccm, and $SnO_2$ thin films were added by magnetron sputtering and treated at $100^{\circ}C$ and $150^{\circ}C$. To identify the conditions under which the amorphous structure was constructed, the XRD patterns were investigated and C-V and I-V measurements were taken to make Al electrodes and perform electrical analysis. The depletion layer was formed by the recombination of electrons and holes through the heat treatment process. $SiO_2/SnO_2$ thin films confirmed that the pores were well formed when heat treated at $100^{\circ}C$ and an electric current was applied over the micro area. An amorphous $SiO_2/SnO_2$ thin film with heat treatment at $100^{\circ}C$ showed no reflection at $33^{\circ}\;2{\theta}$ in the XRD pattern, and a reflection at $44^{\circ}2\;{\theta}$. The macroscopic view (-30 V

• Journal of Electrical Engineering and Technology
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• v.6 no.4
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• pp.543-550
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• 2011

Conductive SiC-$ZrB_2$ composites were produced by subjecting a 40:60 (vol%) mixture of zirconium diboride (ZrB2) powder and ${\beta}$-silicon carbide (SiC) matrix to spark plasma sintering (SPS). Sintering was carried out for 5 min in an argon atmosphere at a uniaxial pressure and temperature of 50 MPa and $1500^{\circ}C$, respectively. The composite sintered at a heating speed of $25^{\circ}C$/min and an on/off pulse sequence of 12:2 was denoted as SZ12L. Composites SZ12H, SZ48H, and SZ10H were obtained by sintering at a heating speed of $100^{\circ}C$/min and at on/off pulse sequences of 12:2, 48:8, and 10:9, respectively. The physical, electrical, and mechanical properties of the SiC-$ZrB_2$ composites were examined and thermal image analysis of the composites was performed. The apparent porosities of SZ12L, SZ12H, SZ48H, and SZ10H were 13.35%, 0.60%, 12.28%, and 9.75%, respectively. At room temperature, SZ12L had the lowest flexural strength (286.90 MPa), whereas SZ12H had the highest flexural strength (1011.34 MPa). Between room temperature and $500^{\circ}C$, the SiC-$ZrB_2$ composites had a positive temperature coefficient of resistance (PTCR) and linear V-I characteristics. SZ12H had the lowest PTCR and highest electrical resistivity among all the composites. The optimum SPS conditions for the production of energy-friendly SiC-$ZrB_2$ composites are as follows: 1) an argon atmosphere, 2) a constant pressure of 50 MPa throughout the sintering process, 3) an on/off pulse sequence of 12:2 (pulse duration: 2.78 ms), and 4) a final sintering temperature of $1500^{\circ}C$ at a speed of $100^{\circ}C$/min and sintering for 5 min at $1500^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.320-320
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• 2016

Nanocrystalline Carbon thin films have numerous applications in different areas such as mechanical, biotechnology and optoelectronic devices due to attractive properties like high excellent hardness, low friction coefficient, good chemical inertness, low surface roughness, non-toxic and biocompatibility. In this work, we studied the comparison of pure DC power and pulsed DC power in plasma sputtering process of carbon thin films synthesis. Using a close field unbalanced magnetron sputtering system, films were deposited on glass and Si wafer substrates by varying the power density and pulsed DC frequency variations. The plasma characteristics has been studied using the I-V discharge characteristics and optical emission spectroscopy. The films properties were studied using Raman spectroscopy, Hall effect measurement, contact angle measurement. Through the Raman results, ID/IG ratio was found to be increased by increasing either of DC power density and pulsed DC frequency. Film deposition rate, measured by Alpha step measurement, increased with increasing DC power density and decreased with pulsed DC frequency. The electrical resistivity results show that the resistivity increased with increasing DC power density and pulsed DC frequency. The film surface energy was estimated using the calculated values of contact angle of DI water and di-iodo-methane. Our results exhibit a tailoring of surface energies from 52.69 to $55.42mJ/m^2$ by controlling the plasma parameters.

• Applied Chemistry for Engineering
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• v.29 no.3
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• pp.330-335
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• 2018

A new approach for the fabrication of organic-organic conducting composite thin films using simultaneous co-vaporization vapor phase polymerization (SC-VPP) of two or more monomers that have different polymerization mechanisms (i.e., oxidation-coupling polymerization and radical polymerization) was reported for the first time. In this study, a PEDOT-PSMA composite thin film consisting of poly(3,4-ethylenedioxythiophene)(PEDOT) and poly(styrene-co-maleic anhydride)(PSMA) was prepared by SC-VPP process. The preparation of organic-organic conductive composite thin films was confirmed through FT-IR and $^1H-NMR$ analyses. The surface morphology analysis showed that the surface of PEDOT-PSMA thin film was rougher than that of PEDOT thin film. Therefore, PEDOT-PSMA exhibited lower electrical conductivity than that of PEDOT. But the conductivity can be improved by adding 2-ethyl-4-methyl imidazole as a weak base. The contact angle of PEDOT-PSMA was about $50^{\circ}$, as compared to $62^{\circ}$ for PEDOT. The demonstrated methodology for preparing an organic-organic conductive hybrid thin film is expected to be useful for adjusting intrinsic conductive polymer (ICP)'s surface properties such as mechanical, optical, and roughness properties.

• Korean Journal of Materials Research
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• v.1 no.3
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• pp.132-138
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• 1991

A comparision was made on the influence of BPSG flow temperatures on the electrical properties in submicron CMOS DRAMs containing two BPSG layers. Three different combinations of BPSG flow temperature such as $850^{\circ}C/850^{\circ}C,\;850^{\circ}C/900^{\circ}C,\;and\;900^{\circ}C/900^{\circ}C$ were employed and analyzed in terms of threshold, breakdown and isolation voltage along with sheet resistance and contact resistance. In case of $900^{\circ}C/900^{\circ}C$ flow, the threshold voltage of NMOS was decreased rapidly in channel length less than $0.8\mu\textrm{m}$ with no noticeable change in PMOS and a drastic decrease in breakdown voltages of NMOS and PMOS was observed in channel length less than and equal to $0.7\mu\textrm{m}$ and $0.8\mu\textrm{m}$, respectively. Little changes in threshold and breakdown voltages of NMOS and PMOS, however, were shown down to channel length of $0.6\mu\textrm{m}$ in case of $850^{\circ}C/850^{\circ}C$ flow. The isolation voltage was increased with decreasing BPSG flow temperature. A significant increase in the sheet resistance and contact resistance was noticeable with decreasing BPSG flow temperature from $900^{\circ}C$ to $850^{\circ}C$. All these observations were rationalized in terms of dopant diffusion and activation upon BPSG flow temperature. Some suggestions for improving contact resistance were made.

• Korean Journal of Materials Research
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• v.9 no.10
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• pp.1012-1017
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• 1999

Low resistance ohmic contacts to the Si-doped $\textrm{In}_{0.17}\textrm{Ga}_{0.83}\textrm{N}$(~$\times10^{19}\textrm{cm}^{-3}$) were obtained using the W metallization schemes. Specific contact resistance decreased with increasing annealing temperature. The lowest resistance is obtained after a nitrogen ambient annealing at $950^{\circ}C$ for 90 s, which results in a specific contact resistance of $2.75\times10^{-8}\Omega\textrm{cm}^{-3}$. Interfacial reactions and surface are analyzed using x-ray diffraction and scanning electron microscopy (SEM). The X-ray diffraction results show that the reactions between the W film and the $\textrm{In}_{0.17}\textrm{Ga}_{0.83}\textrm{N}$ produce a $\beta$-$W_2N$ phase at the interface. The SEM result shows that the morphology of the contacts is stable up to a temperature as high as $850^{\circ}C$. Possible mechanisms are proposed to describe the annealing temperature dependence of the specific contact resistance.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.1
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• pp.35-41
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• 2015

In this study, in order to improve the reliability of ACF interconnections, solder ACF joints were investigated interms of solder joint morphology and solder wetting areas, and evaluated the electrical properties of Flex-on-Board (FOB) interconncections. Solder ACF joints with the ultrasonic bonding method showed excellent solder wetting by broken solder oxide layers on solder surfaces compared with solder joints with remaining solder oxide layer bonded by the conventional thermo-compression (TC) bonding method. When higher target temperature was used, Sn58Bi solder joints showed concave shape due to lower degree of cure of resin at solder MP by higher heating rate. ACFs with epoxy resins and SAC305 solders showed lower degree of resin cure at solder MP due to the slow curing rate resulting in concave shaped solder joints. In terms of solder wetting area, solder ACFs with $25-32{\mu}m$ diameters and 30-40 wt% showed highest wetted solder areas. Solder ACF joints with the concave shape and the highest wetting area showed lower contact resistances and higher reliability in PCT results than conventional ACF joints. These results indicate that solder morphologies and wetting areas of solder ACF joints can be controlled by adjustment of bonding conditions and material properties of solder and polymer resin to improve reliability of ACF joints.

• Journal of the Korean Chemical Society
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• v.7 no.1
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• pp.17-24
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• 1963

The fundamental investigations of surface properties of scheelite were made by electrophoretic mobility adsorption and contact angle measurements, and results have been correlated with its floatability obtained by Hallimond tube flotation test. The role of the interfacial electrical condition on the adsorption of collectors on mineral surfaces is discussed with the flotation of scheelite. From electrokinetic measurements made on scheelite, $Ca^{++}$ and $WO_4^{--}$ are identified to act as potential-determining ions, thus controlling the surface properties on this mineral. Therefore, at the fixed pH, the scheelite surface become to be less negatively charged with increasing $Ca^{++}$ concentration and more negatively charged with increasing $WO_4^{--}$ concentration in the pulp. Adsorption of collectors then depends strongly on the concentration of $Ca^{++}$ or $WO_4^{--}$ in the solution; anionic collectors are adsorbed on less negatively charged surfaces and cationic collectors on more negatively charged surfaces, which in turn defines the effective flotation range with respective collectors for this mineral.