• Journal of Adhesion and Interface
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• v.24 no.2
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• pp.60-63
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• 2023

The AlGaN/GaN heterostructure has high electron mobility due to the two-dimensional electron gas (2-DEG) layer, and has the characteristic of high breakdown voltage at high temperature due to its wide bandgap, making it a promising candidate for high-power and high-frequency electronic devices. Despite these advantages, there are factors that affect the reliability of various device properties such as current collapse. To address this issue, this paper used metal-organic chemical vapor deposition to continuously deposit AlGaN/GaN heterostructure and SiN passivation layer. Material and electrical properties of GaN HEMTs with/without SiN cap layer were analyzed, and based on the results, low-frequency noise characteristics of GaN HEMTs were measured to analyze the conduction mechanism model and the cause of defects within the channel.

• Composites Research
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• v.20 no.5
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• pp.49-55
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• 2007

Nanocomposite blade for dicing semiconductor wafer is investigated for micro/nano-device and micro/nano-fabrication. While metal blade has been used for dicing of silicon wafer, polymer composite blades are used for machining of quartz wafer in semiconductor and cellular phone industry in these days. Organic-inorganic material selection is important to provide the blade with machinability, electrical conductivity, strength, ductility and wear resistance. Maintaining constant thickness with micro-dimension during shaping is one of the important technologies fer machining micro/nano fabrication. In this study the fabrication of blade by wet processing of mixing conducting nano ceramic powder, abrasive powder phenol resin and polyimide has been investigated using an experimental approach in which the thickness differential as the primary design criterion. The effect of drying conduction and post pressure are investigated. As a result wet processing techniques reveal that reliable results are achievable with improved dimension tolerance.

• Korean Journal of Materials Research
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• v.3 no.6
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• pp.614-623
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• 1993

Electrical characteristics of LiF-$Li_{2}O-B_{2}O_{3}-P_{2}O_5$ glasses with fixed $Li_2O$ content have been investigated by using AC impedance spectroscopy. Part of the total lithium ions present in these glasses contributes to conduction, and the changes in electrical conductivity with composition was inconsistent with the weak electrolyte model. The power law could not be used to determine the hopping ion concentration in these glasses. Both mobile carrier density and mobility have been modified as Li were added in the form of LiF. The formation of $(B-O-P)^-,di^-$, and metaborate group gave additional available sites for Li+ diffusion causing the enhancement of conductivity. The observed maximum conductivity was $2.43 \times 10^{-4}$S/cm at $150^{\circ}C$ at the composition containing 8mol% LiF. The decomposion potential amounted to 5.94V. The Li/glass electrolyte/$TiS_2$ solid-state cell showed open circuit voltage of 3.14V and energy density of 22 Wh/Kg at $150^{\circ}C$.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.17 no.6
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• pp.47-53
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• 2003

In this paper, we described the laboratory layout of the optical CT in connection with the measurement of large current based on Magneto-Optic Effects. It was used He-Ne laser for light source and was used PIN-Photodiode for light receiver. The sensing section was organized by winding optical fiber around conductor on the concept that the rotation angle of polarizing axis by Faraday Effect is proportional to the applied current in to conduction. The optical signal passed through optical fiber sensor was induced to analyzer arranged in the direction of $\theta$ for input polarization, and then analyzed its rotation angle and researched on operating characteristics of optical CT for 60[Hz] AC current measurement from l00[A] to 1000[A] was carried out. In this results, the output signals induced linearly with the current and proved that the intensity is increased with increasing turns of fiber through output differences which in accordance with turns of fiber and we verified that there is not only difference of the output with the medium between electric field and optical fiber, but also the lineality. Measuring the references and output intensities of the optical CT, ratio errors were within $\pm$7%. This confirmed that error rate will be improved by each medium and turns.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.20 no.2
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• pp.16-23
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• 2006

This paper presents a novel single-stage high frequency resonant inverter link type DC-DC converter using zero voltage switching with high power-factor. The proposed topology is integrated half-bridge boost rectifier as power factor corrector(PFC) and half-bridge high frequency resonant converter into a single-stage. The input stage of the half-bridge boost rectifier works in discontinuous conduction mode(DCM) with constant duty cycle and variable switching frequency. So that a boost converter makes the line current follow naturally the sinusoidal line voltage waveform. Simulation results have demonstrated the feasibility of the proposed high frequency resonant converter. Characteristics values based on characteristics analysis through circuit analysis is given as basis data in design procedure. Also, experimental results are presented to verify theoretical discussion. This proposed inverter will be able to be practically used as a power supply in various fields as induction heating applications, fluorescent lamp and DC-DC converter etc.

• Proceedings of the KIEE Conference
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• 1988.11a
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• pp.372-375
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• 1988

The III-V ternary alloy semiconductor $In_{l-x}Ga_{x}As$ were grown by the temperature Gradient of $0.60{\leq}x{\leq}0.98$. The electrical properties were investigated by the Hall effect measurement with the Van der Pauw method in the temperature range of $90{\sim}300K$. $In_{l-x}Ga_{x}As$ were revealed n-type and the carrier concentration at 300K were in the range of $9.69{\times}10^{16}cm^{-3}{\sim}7.49{\times}10^{17}cm^{-3}$. The resistivity was increased and the carrier mobility was decreased with increasing the composition ratio. The optical energy gap determined by optical transmission were $20{\sim}30meV$ lower than theoretical valves on the basis of absorption in the conduction band tail and it was decreased with increasing the temperature by the Varshni rule. In the photoluminescence of undoped $In_{l-x}Ga_{x}As$ at 20K, the main emission was revealed by the radiative recombination of shallow donor(Si) to acceptor(Zn) and the peak energy was increased with increasing the composition, X. The diffusion depth of Zn increases proportionally with the square root of diffusion time, and the activation energy for the Zn diffusion into $In_{0.10}Ga_{0.90}As$ was 2.174eV and temperatures dependence of diffusion coefficient was D = 87.29 exp(-2.174/$K_{B}T$). The Zn diffusion p-n $In_{x}Ga_{x}As$ diode revealed the good rectfying characteristics and the diode factor $\beta{\approx}2$. The electroluminescence spectrum for the Zn-diffusion p-n $In_{0.10}Ga_{0.90}As$ diode was due to radiative recombation between the selectron trap level(${\sim}140meV$) and Zn acceptor level(${\sim}30meV$). The peak energy and FWHM of electroluminescence spectrum at 77K were 1.262eV and 81.0meV, respectively.

• Journal of the Korean Vacuum Society
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• v.15 no.5
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• pp.534-540
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• 2006

Thin films of $V_2O_3$, $VO_2$, and $V_2O_5$ were obtained from a single precursor solution through post-annealing processes under different annealing conditions. As annealed in air, the deposited films became $V_2O_5$ with orthorhombic crystal structure, while they were $V_2O_3$ and $VO_2$ with rhombohedral and monoclinic crystal structure as annealed in vacuums with base pressure of $1{\times}10^{-6}$ Torr and with 10 mTorr $O_2$ pressure, respectively. Electrical and optical measurements indicated that the $V_2O_5$ and $VO_2$ films are semiconducting, while the $V_2O_3$ films are metallic at room temperature. Chromium doping in $VO_2$ resulted in a decrease of the resistivity and changed the conduction type from n-type to p-type. 10% Cr-doped $VO_2$ films were found to have orthorhombic crystal structure, which is different from that of the undoped $VO_2$. Spectral features in the optical absorption spectra of all the films were interpreted as the transitions involving O 2p and V 3d bands. The crystal-field splittings between $t_{2g}$ and $e_g$ states of the V 3d bands are estimated to be about 1.5 and 1.0 eV for $V_2O_5$ and $VO_2$, respectively.

• Korean Journal of Materials Research
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• v.9 no.8
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• pp.792-797
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• 1999

The 8mol.%Y$_2$$O_3$-$ZrO_2$mainly employed as an electrolyte of solid oxide fuel cells(SOFCs) shows excellent electrical properties but has a weakness in the mechanical properties. Since the electrolyte of SOFCs requires both good electrical and mechanical properties, this study was conducted to meet both requirements. The electrolyte thin films were produced on the LSM(cathode material) substrate of a cell and Si wafer. Four electrolyte film types of single layer and the multiple layer, consisting of 3-YSZ(3mol.%$Y_2$$O_3$) with excellent mechanical properties and 8-YSZ with the excellent electric conduction, were produced by electron beam coating technology. Ther crystal structure and the mechanical properties were also analysed. As the results of the study, the 3-YSZ thin film turned out to be in the tetragonal, partially monoclinic phase, while the 8-YSZ thin film showed the cubic phase. The residual stress in the multiple layer was lower than that of the single layer. The microhardness of the multiple layer was similar to that of the existing 8-YSZ single layer both before and after annealing treatment.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.1
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• pp.66-72
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• 2000

The behavior of nucleation and crystallization in the $Li_2O_3-SiO_2$ glass heat-treated at different condition under the conventional and microwave processing was studied by differential thermal analysis (DTA), X-ray diffractometry (XRD), optical microscopy (OM), and electrical conductivity measurement. Nucleation temperature and temperature of maximum nucleation rate in both conventionally and microwave heat-treated samples were 460~$500^{\circ}C$ and $580^{\circ}C$, respectively. It was expected that the probability for bulk crystallization increased in microwave heat-treated sample, compared to conventionally heat-treated one. Degree of crystallization increased with increasing crystallization temperature in both conventionally and microwave heat-treated samples. However, pattern of crystallization growth under microwave processing appeared to be quite different from that under the conventional one due to its internal or volumetric heating. Electrical conductivity of conventionally and microwave heat-treated samples were 1.337~2.299, 0.281~~$0.911{\times}10^{-7}\Omega {\textrm}{cm}^{-1}$, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.133-133
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• 2008

Recently, as the down-scailing of field-effect transistor devices continues, Schottky-barrier field-effect transistors (SB-FETs) have attracted much attention as an alternative to conventional MOSFETs. SB-FETs have advantages over conventional devices, such as low parasitic source/drain resistance due to their metallic characteristics, low temperature processing for source/drain formation and physical scalability to the sub-10nm regime. The good scalability of SB-FETs is due to their metallic characteristics of source/drain, which leads to the low resistance and the atomically abrupt junctions at metal (silicide)-silicon interface. Nevertheless, some reports show that SB-FETs suffer from short channel effect (SCE) that would cause severe problems in the sub 20nm regime.[Ouyang et al. IEEE Trans. Electron Devices 53, 8, 1732 (2007)] Because source/drain barriers induce a depletion region, it is possible that the barriers are overlapped in short channel SB-FETs. In order to analyze the SCE of SB-FETs, we carried out systematic studies on the Schottky barrier overlapping in short channel SB-FETs using a SILVACO ATLAS numerical simulator. We have investigated the variation of surface channel band profiles depending on the doping, barrier height and the effective channel length using 2D simulation. Because the source/drain depletion regions start to be overlapped each other in the condition of the $L_{ch}$~80nm with $N_D{\sim}1\times10^{18}cm^{-3}$ and $\phi_{Bn}$ $\approx$ 0.6eV, the band profile varies as the decrease of effective channel length $L_{ch}$. With the $L_{ch}$~80nm as a starting point, the built-in potential of source/drain schottky contacts gradually decreases as the decrease of $L_{ch}$, then the conduction and valence band edges are consequently flattened at $L_{ch}$~5nm. These results may allow us to understand the performance related interdependent parameters in nanoscale SB-FETs such as channel length, the barrier height and channel doping.