• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.443-446
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• 2001

MI(Magneto-Impedance) sensor which is made by thin films has significantly high detecting sensitivity in weak magnetic field. It also has a merit to be able to build in low power system. Its structure is simple, which makes it easier to prepare a miniature. In this study, its magnetic permeability and anisotropy field(H$\sub$k/) as a function of a thickness of sputtered amorphous CoZrNb thin film with high saturation magnetostriction and excellent soft magnetic property are investigated. In order to make a uniaxial anisotropy, thin film was subjected to post annealing with a static magnetic field with 1KOe intensity at 250, 300, and 320$^{\circ}C$ for 2 hour. Anisotropy field(H$\sub$k/)of thin film is measured by using MH loop tracer. Its magnetic permeability of thin film is measured over the frequency range from 1 MHz to 750MHz. It has shown that the magnetic permeability of amorphous CoZrNb thin film is decreased due to the skin effect with increasing a thickness of CoZrNb thin film, and hence its driving frequency is lowered.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.778-781
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• 2002

MI(Magneto-Impedance) sensor which is made by thin films has significantly high detecting sensitivity in weak magnetic field. It also has a merit to be able to build in the low power system. Its structure is simple, which makes it easier to prepare a miniature. In this study, its magnetic permeability and anisotropy field$(H_k)$ as a function of a thickness of sputtered amorphous CoZrNb films with zero-magnetostriction and excellent soft magnetic property are investigated. In order to make a uniaxial anisotropy, film was subjected to the post annealing in a static magnetic field with 1KOe intensity at 250, 300, and $320^{\circ}C}$ respectively for 2 hours. Anisotropy field$(H_k)$ of film is measured by using a MH loop tracer. Its magnetic permeability of a film is measured over the frequency range from 1 MHz to 750MHz. It has shown that the magnetic permeability of amorphous CoZrNb film is decreased due to the skin effect with increasing a thickness of the CoZrNb film, and hence its driving frequency is lowered. And, it was examined on the permeability and impedance to fabricate the MI sensor which acts at a low frequency by thickening a CoZrNb film relatively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.8
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• pp.888-892
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• 2004

It is necessary to develop soft magnetic layer with high saturation magnetization 4 $\pi{M}_s$ and in-plane magnetic anisotropy field Hk for soft magnetic underlayer of perpendicular magnetic recording media with high signal to noise ratio. Fe-Co-B layer with high 4 $\pi$Ms of about 23 kG deposited on Ni-Fe and Ni-Fe/Si seedlayer exhibited very high in-plane magnetic anisotropy filed Hk of about 280 and 380 Oe, respectively, In-plane XRD studies clarified that the lattice spacing of planes along the easy axis direction was longer than that along the hard axis direction in the Fe-Co-B layers with high Hk. These results indicate that high Hk of Fe-Co-B/Ni-Fe and Fe-Co-B/［Ni-Fe/si］ layers were resulted from magnetoelastic anisotropy owing to a residual stress. Moreover, the high Hk in the Fe-Co-B/Ni-Fe layer was maintained until 30$0^{\circ}C$ annealing temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.11
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• pp.1008-1013
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• 2003

We have studied the effect of black matrix (BM) according to the dielectric anisotropy of liquid crystals (LCs) for a homogeneously aligned LC cell driven by fringe-electric field. The results show that for a LC with positive dielectric anisotropy (+LC) there is a large transmittance change when using a conductive BM, whereas the transmittance change is low for a LC with negative dielectric anisotropy (-LC). The conductive BM existing on top substrate produces vertical electric field, which makes the LC molecules be tilt upward from the substrate and have small twist angle for the +LC. However, for the -LC the conductive BM affects the LC distribution only slightly due to characteristic of the -LC orienting perpendicular to the field. Therefore, for the +LC the electro-optic characteristics are strongly dependent on conductivity of the BM on top substrate in a homogeneous liquid crystal cell driven by fringe-electric field.

• KIEE International Transaction on Electrical Machinery and Energy Conversion Systems
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• v.2B no.4
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• pp.149-155
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• 2002

This paper presents magnetic field analysis technology that uses a vector magnetic characteristic. Recently the magnetic material was found to be measurable using the vector quantity technique. Therefore considering the anisotropy of the magnetic material in the vector field analysis is necessary. The magnetic field analysis method, which is considered the anisotropy by combining the finite element method with the E&$S^2$ (Enokizono, Soda, and Shimoji) modeling, is applied to a permanent magnet motor model.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.323-326
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• 2000

In this study, we used Brewster-Angle Microscope(BAM) to study on the molecular orientation of monolayer on the water surface. The behaviors of molecules on three different subphase have been observed. Reproducible $\pi$-A isotherm have been obtained only on information about phase transition by molecular area. BAM facilitates the observation of morphology by optical anisotropy and thickness in monolayer and multilayers as BAM is shown to be sensitive to anisotropy of film. Every transition was found by BAM technique, either as a dramatic change in degree of contrast or as a sudden alteration of molecular action and $\pi$-A isotherm.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.754_755
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• 2009

This paper deals with the characteristics analysis & optimum design of Synchronous Reluctance Motor (SynRM) with anisotropy rotor using a coupled Finite Element Method (FEM) & Response Surface Methodology (RSM). The focus of this paper is the characteristics analysis & optimum design relative to the output power on the basis of rotor materials of a SynRM. The coupled Finite Elements Analysis (FEA) & Preisach model have been used to evaluate nonlinear solutions. Comparisons are given with characteristics of normal synchronous reluctance motor and those of anisotropy rotor SynRM (ANISO-SynRM), respectively. The feasibility of using RSM with FEM in practical engineering problem is investigated with computational examples and comparison between the fitted response and the results obtained from an analytical solution according to the design variables of rotor in anisotropy rotor SynRM.

• Geophysics and Geophysical Exploration
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• v.24 no.3
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• pp.98-112
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• 2021

We followed and extended the algorithm originally made by Das (1995) to calculate the electric potential and field induced by electric current in arbitrary anisotropic layered structure. We confirmed all the theoretical contents and coded the corresponding program to acquire the electric potential and field. Further we extended to forward estimation of apparent resistivity to be attained by electrical resistivity survey on anisotropic layered structure with differing the electrode spacing and azimuth of anisotropy. The effects of anisotropy were reviewed by considering some examples.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1107-1110
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• 2006

We investigate the effect of processing temperature of gate insulator and optical anisotropy on organic thin-film transistors (OTFTs). The insulator film which was processed lower temperature than solvent boiling temperature can lead more aligned pentacne molecules compare to higher processed insulator film. It finally gives rise to the big increase of carrier mobility in OTFTs, although there are little difference at the seriously affecting properties to device performance, for example roughness of gate insulator film.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1500-1502
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• 2000

In this study, we have investigated the photoinduced anisotropy (PA) phenomena by the assisted. electric field effect on $As_{40}Ge_{10}Se_{15}S_{35}$ thin films. Investigation of photoinduced anisotropy on the assisted electric field effect was carried out using a He-Ne laser beams (inducing and probing beams) illuminating the same area of the thin film. To investigate the effect of electric field, various bias voltages applied. The result is shown the photoinduced anisotropy dependence on electric field. Also. we obtained the property of photoinduced anisotropy in the electric field effects by various voltages.