• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2002.11a
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• pp.796-799
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• 2002

BSCCO thin films are fabricated via a co-deposition process at an ultra-low growth rate using ion beam sputtering. The sticking coefficient of Bi element exhibits a characteristic temperature dependence. This temperature dependence of the sticking coefficient was explained consistently on the basis of the evaporation and sublimation processes of Bi$_2$O$_3$.

• Transactions on Electrical and Electronic Materials
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• v.10 no.5
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• pp.147-151
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• 2009

For integrated passive device (IPD) applications, we have successfully developed and characterized metalinsulator-metal (MIM) capacitors with 2000 $\AA$ plasma-enhanced chemical vapor deposition (PECVD) silicon nitride which are deposited with the $SiH_4/NH_3$ gas mixing rate, working pressure, and RF power of PECVD at $250^{\circ}C$. Five PECVD process parameters are designed to lower the refractive index and lower the deposition rate of $Si_3N_4$ films for the high breakdown electric field. For the PECVD process condition of gas mixing rate (0.957), working pressure (0.9 Torr), and RF power (60 W), the atomic force microscopy (AFM) root mean square (RMS) value of about 2000 $\AA$ $Si_3N_4$ on the bottom metal is lowest at 0.862 nm and the breakdown electric field is highest at about 8.0 MV/cm with a capacitance density of 326.5 pF/$mm^2$. A pretreatment of metal electrodes is proposed, which can reduce the peeling of nitride in the harsh test environment of heat, pressure, and humidity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.111-114
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• 2003

In order to improve the surface uniformity and the conduction properties of the fabricated YBCO thick films, a system that applies alternating field vertically to the EPD field has been developed for the first time and applied to the electrophoretic deposition process. The applied alternating electric field caused a force to be exerted on each YBCO particle and resulted in a shaking of the particle in the direction of applied electric field, accomplishing a uniform particle orientation. The usual commercial electrical power was used for the vertically applied alternating voltage and the induced electric field was 25-120 V/cm at 60Hz. The thick film fabricated by the method developed in this paper showed better surface uniformity without crack and porosity and improved film characteristics such as critical temperature ($T_{c,zero}$ : 90 K) and critical current density ($2354\;A/cm^2$). Therefore, it is expected that the shaky-aligned electrophoretic deposition method can be used to fabricate superconductor films through a simpler process and at less expense.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.11
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• pp.1041-1046
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• 2003

In order to improve the surface uniformity and the conduction properties of the fabricated YBCO thick films, a system that applies alternating field vertically to the EPD field has been developed for the first time and applied to the electrophoretic deposition process. The applied alternating electric field, so called Shaky Alternating Assisted Field, caused a force to be exerted on each YBCO particle and resulted in a shaking of the particle in the direction of applied electric field, accomplishing a uniform particle orientation. The usual commercial electrical power was used for the vertically applied alternating voltage and the induced electric field was 25-120 V/cm at 60Hz. The thick film fabricated by the method developed in this paper showed better surface uniformity without crack and porosity and improved film characteristics such as critical temperature (Tc,zero = 90 K) and critical current density (2354 A/$\textrm{cm}^2$), Therefore, it is expected that the shaky-aligned electrophoretic deposition method can be used to fabricate superconductor films through a simpler process and at less expense.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.960-964
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• 2004

[ $Ba_2NaNb_5O_{15}$ ](BNN) thin films have been prepared by the ion beam sputter deposition (IBSD) method on Pt coated Si substrate at temperature as low as $600^{\circ}C$ XRD, SEM were used to investigate the crystallization and microstructure of the films. It was found that the films were crack-free and uniform in microstructure. The electric properties of thin films were carried out by observation of D-E hysteresis loop, dielectric constant and leakage current. It was found the deposition rate strongly influenced the phase formation of the films, where the phase of $BaNb_2O_6$ was always formed when the deposition rate was high. However, the single phase (tungsten bronze structure ) BNN thin film was obtained with the deposition rate as low as $22{\AA}/min$. The remanent polarization Pr and dielectric constant are about 1-2 ${\mu}C/cm^2$ and $100\sim200$, respectively. It was also founded the electric properties of thin films were influenced by the deposition rate. The Pr and dielectric constant of films increased with the decrease of deposition rate. The effects of annealing temperature and annealing time to the crystallization behavior of films were studied. The crystallization of thin film started at about $600^{\circ}C$. The adequate crystallization was gotten at the temperature of $650^{\circ}C$ when the annealing time is 0.5 hour or at the temperature of $600^{\circ}C$ when the annealing time is long as 6 hours.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.2
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• pp.343-348
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• 2007

The physical properties of DMPC monolayer were made for dielectric relaxation phenomena by the detection of the surface pressures and displacements current. Lipid thin films were deposited by accumulation and the current was measured after the electric bias across the manufactured MIM device. It is found that the phospolipid monolayer of dielectric relaxation takes a little time and depend on the molecular area. When electric bias is applied across the manufactured MIM device by the deposition condition of phospolipid mono-layer, it wasn't breakdown when the higher electric field to impress by increase of deposition layers.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.12-13
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• 2006

The physical properties of DMPC monolayer were made for dielectric relaxation phenomena by the detection of the surface pressures and displacements current. The current was measured after the electric bias across the manufactured MIM device. It is found that the phospolipid monolayer of dielectric relaxation takes a little time and depend on the molecular area. When electric bias is applied across the manufactured MIM device by the deposition condition of phospolipid mono-layer, it wasn't breakdown when the higher electric field to impress by increase of deposition layers.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.5
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• pp.326-332
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• 1999

In this paper, we designed and fabricated High-Tc Superconducting (HTS) microstrip bandpass filters using Stepped Impedance Resonators(SIR) and studied on their characteristics. The $high-T_c$ superconducting $Y_1Ba_2Cu_3O_{7-x}$ epitaxial films were deposited by Pulse Laser Deposition (PLD) system on MgO. The fabricated filters were designed so as to operate in Ku band with central frequency 17.25 GHz, bandwidth 2.896% and ripple 0.01 dB. These filters were composed of parallel coupled microstrip SIR of which impedance ratio (K) are 0.5, 1.5. In the measured response, HTS filters had showed insertion loss below -0.5 dB. For comparison with normal conducting filter, we fabricated the Au counterpart that consists of the resonators as K=1.5 in the same dimension and measured performance of the Au filter. In comparison, HTS filter designed optimally got superior response to gold conterpart.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.6
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• pp.429-435
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• 1999

The $SrTiO_3$ thin films were prepared on Ag/TiN-coated and p-type bare Si(100) substrates by r.f. magnetron sputtering deposition technique. The electrical properties of the deposited films were investigated, which controlling deposition parameters such as substrate temperature and film thickness. The electrical properties ofthe $SrTiO_3$ films were measured using the capacitance-voltage(C-V) technique. The thickness dependence of the electrical properties of the $SrTiO_3$ films was analyzed of the connection with the films in series. The substrate affected the crystal structure and texture characteristics of the $SrTiO_3$ films. The resistivity of the film, sandwiched between Al and Ag films was measured, as a function of the temperature.

• Journal of the Korean Society for Precision Engineering
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• v.23 no.10
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• pp.88-95
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• 2006

Cold gas dynamic spray is a relatively new coating process by which coatings can be produced without significant heating during the process. Cold-spray uses supersonic gas flow to carry metallic powders to the substrate. Its low process temperature can minimize thermal stress and also reduce the deformation of the substrate. Most researches on cold-spray have focused on micro scale coating, but in this study macro scale deposition was conducted. Properties of aluminum layer by cold-spray deposition such as coefficient of thermal expansion (CTE), modulus of elasticity. hardness, and electric conductivity were measured. The results showed that properties of aluminum layer by cold-spray deposition were different from properties of pure aluminum and aluminum alloy.