• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.4
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• pp.47-53
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• 1997

We fabricated gamma radiation detector using high resistive p-Cd$_{80}$Zn$_{20}$Te grown by high pressure bridgman method and forming au thin film electrode by chemically electroless deposition method. The device of Au/Cd$_{80}$Zn$_{20}$Te/Au is a typical MIM structure. The characteristic of current-voltage showed good linearity to 3kV/cm but it depend on the square of electric field over 3kV/cm. As the results of rutherford backscattering spectroscope(RBS) and auger spectroscope on the Au/Cd$_{80}$Zn$_{20}$Te, Au penetrated to the surface of Cd$_{80}$Zn$_{20}$Te detector absorbed slightly high energy radiation like a few hundred keV and showed good performance to detect low energy gamma ray.mma ray.

• Journal of Welding and Joining
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• v.32 no.3
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• pp.19-26
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• 2014

Through Silicon Via (TSV) technology is the shortest interconnection technology which is compared with conventional wire bonding interconnection technology. Recently, this technology has been also noticed for the miniaturization of electronic devices, multi-functional and high performance. The short interconnection length of TSV achieve can implement a high density and power efficiency. Among the TSV technology, TSV filling process is important technology because the cost of TSV technology is depended on the filling process time and reliability. Various filling methods have been developed like as Cu electroplating method, molten solder insert method and Ti/W deposition method. In this paper, various TSV filling methods were introduced and each filling materials were discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.04a
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• pp.111-114
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• 2003

Compared to a conventional atomic layer deposition (ALD) grown Al203 film, Plasma enhanced ALD (PEALD) grown AION film was revealed to possess a large breakdown field, which is necessary for stable operation of thin film electroluminescent (TFEL) device. Also, AION is more stable than Al203 films grown by PEALD or by ALD after post-annealing process, which is inevitably required to improve luminance property of phosphor. Furthermore, AION films were applied to insulators of ZnS:Tb TFEL device. Resultant1y, they show better stability than ALD grown insulators under high electric field.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2008.05a
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• pp.21-24
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• 2008

Properties of carbon nano fiber (CNF) as field emitters were described. Carbon nano fiber (CNF) of herringbone was prepared by thermal chemical vapor deposition(CVD). Field emitters mixed with organic binders, conductive materials and were prepared by screen-printing process. In order to increase field emissions, the surface treatment of rubbing & peel-off was applied to the printed CNF emitters on cathode electrode. The measurements of field emission properties were carried out by using a diode structure inline vacuum chamber. CNF of herringbone type showed good emission properties that a turn on field was as low as 2.1 $V/{\mu}m$ and current density was as large as 0.15 $mA/cm^2$ of 4.2 $V/{\mu}m$ with electric field. Through the results. we propose that CNFs are suitable for application of electron emitters in Field Emission Devices.

• 한국신재생에너지학회:학술대회논문집
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• 2009.11a
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• pp.348-348
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• 2009

The conductive coating method is used for various industrial fields. For example, Sputtering process is used to coat ITO layer in LCD or OLED panel manufacture process and fabricate a base layer of substrate of an electric printing device. However, conventional coating processes (beam sputtering, spin coating etc.) has a problems in the industrial manufacturing process. These processes have a very high cost and critical manufacturing environment as a vacuum process. Recently, many researchers have proposed various printing process instead of conventional coating processes. In this paper, we propose an ESD printing process in ITO coating layer and apply to fabricate a conductive coating film. Furthermore, the effect of the nozzle and also the applied voltage on different configuration of the nozzle head was also studied for better understanding of the Electro Static deposition process.

• Journal of the Speleological Society of Korea
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• no.76
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• pp.1-13
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• 2006

Electrophoretic deposition (EPD) of alcohol YBCO suspensions on the Ag wire electrode is studied. Poly(ethylene glycol) was coordinated to a structure formed by the EPD process with YBCO particles. The suspension is characterized in terms of zeta potential and conductivity. The d.c electric fields of 200-300 V/cm are applied for 1-10 min. The optimal condition for the EPD allows modifying the properties and microstructure of the deposited films. Superconducting coatings with nanometer-sized pores and a preferred orientation along the c-axis were prepared from the result with chemically modified precursor solution. In contrast, YBCO coatings of submicrometer-sized pores and randomly orientated grains were prepared from the solution without PEG.

• Journal of the Semiconductor & Display Technology
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• v.15 no.4
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• pp.33-35
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• 2016

In this study, a new plasma source was used in the ALD process. Line type plasma sources were analyzed by electric and magnetic field simulation. And the results were compared with plasma density and electron temperature measurement results. As a result, the results of the computer simulation and the diagnosis results of plasma density and electron temperature showed similar tendency. At this time, the plasma uniformity is 95.6 %. $Al_2O_3$ thin film was coated on 6 inch Si-wafer, using this plasma source. The uniformity of the thin film was more than 98% and the thin film growth rate was 0.13 nm/cycle.

• Journal of Industrial Technology
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• v.27 no.A
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• pp.157-162
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• 2007

This paper describes a power supply aimed at the production of plasma and its control method for a magnetron sputter in thin film coating process of PVD(Physical Vapor Deposition). Plasma load changes its impedance characteristic easily according to operating conditions and frequently produces electric arc. So. in this paper, a plasma power supply with improved output control performance in the transient state for the plasma load is presented. Also, it includes a strategy that can detect arc rapidly and reduce arc energy effectively into a load. The validity of the proposed power supply through experimentation on 20kW system was proved.

• Bulletin of the Korean Chemical Society
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• v.30 no.5
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• pp.1097-1100
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• 2009

New types of conducting polyaniline-polymannuronate (PANI-PM) composites were synthesized by in situ deposition techniques in an aqueous media. By dissolving different weight percentage of polymannuronate (PM) (5, 10, 15, and 25%), the oxidative polymerization of aniline was carried out using ammonium per sulfate as an oxidant. The obtained composites were studied for their thermal stability and electrochemical behavior. The thermal stability of PANI-PM composites is lower than PANI, which supports a strong interaction between PANI and PM. However, the composites show an appreciable electrochemical behavior. Based on these observation the PANI-PM composites can be explored in different fields such as electric devices, sensors, functional coatings, etc.

• The Korean Journal of Ceramics
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• v.3 no.1
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• pp.34-36
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• 1997

We have fabricated a patterned diamond field emitter on a silicon substrate. Fine diamond particles were planted on a silicon wafer using conventional scratch method. A silicon oxide film was deposited on the substrate seeded with diamond powder. An array of holes was patterned on the silicon oxide film using VLSI processing technology. Diamond grains were grown using a microwave plasma-assisted chemical vapor deposition. Because diamond could not grow on the silicon oxide barrier, diamond grains filled only the patterned holes in the silicon oxide film, resulting in an array of diamond tips.