• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.290-291
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• 2006

The effect of praseodymium substitution on the ferroelectric properties of $Bi_4Ti_3O_{12}$ thin films have been investigated. Ferroelectric Pr-substituted $Bi_4Ti_3O_{12}$ thin films were fabricated by chemical solution deposition onto Pt/Ti/$SiO_2$/Si substrates. The structure and morphology of the films were analyzed using Xray diffraction, and scanning electron microscopy, respectively. About 200-nm-thick BPT films grown at $720^{\circ}C$ exhibited a polycrystalline structure and showed excellent ferroelectric properties with a remanent polarization ($2P_r$) of $28.21\;{\mu}C/cm^2$ at an applied voltage of 5 V. The films a1so demonstrate fatigue-free behavior up to $10^{11}$ read/write switching cycles with 1 MHz bipolar pulses at an electric field of ${\pm}5\;V$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2005년도 춘계학술대회 논문집 디스플레이 광소자 분야
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• pp.127-130
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• 2005

The properties of phosphorus doped ZnO multilayer thin films deposited on (001) sapphire substrates by pulsed laser deposition (PLD) were investigated by using annealing treatment at various annealing temperature after deposition. The phosphorus doped ZnO multilayer was composed of phosphorus doped ZnO layer and two pure ZnO layers on sapphire substrate. The structural. electrical and optical properties of the ZnOthin films were measured by X-ray diffraction (XRD). Hall measurements and photoluminescence (PL). As the annealing temperature optimized. the electrical properties of the ZnO multilayer showed a electron concentration of $1.56{\times}10^{16}/cm^3$, a resistivity of 17.97 ${\Omega}cm$. It was observed the electrical property of the film was changed by dopant activation effect as thermal annealing process

• Korean Journal of Optics and Photonics
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• 제3권1호
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• pp.50-54
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• 1992

Maskless depositon of copper onto n-doped and p-doped Si in an aqueous copper sulfate solution is investigated. On p-doped Si substrates, microscopic $(~10\mu\textrm{m}$) copper spots are deposited by illuminating continuous wave $Ar^+$ laser beam of wavelength 514.5 nm. Copper deposition on n-doped Si substrates is also achieved by shinning second harmonic pulses $(pulse width~25 nsec, \lambda=530 nm)$ of a passively Q-switched Nd:YAG laser. The observed deposition is attributed to the electric field resulting from the Galvanic potential of a semiconductor-electrolyte junction.

• Progress in Superconductivity and Cryogenics
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• 제25권4호
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• pp.24-27
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• 2023

Until now, many research activities have been conducted to commercialize high-temperature superconducting (HTS) wires for electric applications. Most of all researchers have focused on enhancing the piece length, critical current density, mechanical strength, and throughput of HTS wires. Recently, HTS magnet for generating high magnetic field shows degraded performance due to the deformation of HTS wire by high electro-magnetic force. The deformation can be derived from widthwise thickness non-uniformity of HTS wire mainly caused by wet processes such as electro-polishing of metal substrate and electro-plating of copper. Gradient sputtering process is designed to improve the thickness uniformity of HTS wire along the width direction. Copper stabilizing layer is deposited on HTS wire covered with specially designed mask. In order to evaluate the thickness uniformity of HTS wire after gradient sputtering process, the thickness distribution across the width is measured by using the optical microscope. The results show that the gradient deposition process is an effective method for improving the thickness uniformity of HTS wire.

• Proceedings of the IEEK Conference
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• 대한전자공학회 2000년도 하계종합학술대회 논문집(2)
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• pp.318-321
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• 2000

We showed that the change of Ar to $N_2$flow during the TiN deposition by the reactive sputtering decides the crystallinity of LPCVD W, as well as the electrical properties of the W-TiN/SiO$_2$Si capacitor. In particular, the threshold voltage can be controlled by the Ar to $N_2$ratio. As compared to the results obtained from the LPCVD W/SiO$_2$/Si MOS capacitor, the insertion of approximately 50 nm TiN film effectively prohibits the fluorine diffusion during the deposition and annealing of W films, resulting in negligible leakage currents at the low electric fields.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 한국해양정보통신학회 2003년도 춘계종합학술대회
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• pp.359-362
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• 2003

Electrophoretic deposition (EPD) of alcohol YBCO suspensions on the Ag wire electrode is studied. Poly(ethylene glycol) was coordinated to a structure formed by the EPD process with YBCO particles. The suspension is characterized in terms of zeta potential and conductivity. The d.c electric fields of 200-300 V/cm are applied for 1-10 min. The optimal condition for the EPD allows modifying the properties and microstructure of the deposited films. Superconducting coatings with nanometer-sized pores and a preferred orientation along the c-axis were prepared from the result with chemically modified precursor solution. In contrast, YBCO coatings of submicrometer-sized pores and randomly orientated grains were prepared from the solution without PEG.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 1997년도 춘계학술대회 논문집
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• pp.202-205
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• 1997

In this paper, we synthesized poly(N-(2-4-imidazolyl) ethyl) maleimide-alt-1-octadecene(IMI-O) polymer that can have function group and improvement of mechnical strength and then confirmed the possibility of molecular device made by LB method. Evaluation of LB film have been processed such as the technique of EA, $^{1}$H-NMR, FT-IR. Also, the deposition status was observed by SEM and Metal/Insulator/Metal(MIM) device was fabricated for investigation of electric properties. In our experimental results. The surface pressure for the solid state was investigated to 20~35[dyne/cm] by the $\pi$ -A isotherm and the limiting area was about 40 ~45 ($\AA$$^2$/molecule). The deposition status of LB films was confirmed by SEM. The conductivity of LB film was found to be 10$^{-14}$ ~10$^{-13}$ [S/cm] by I-V characteristic.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1096-1099
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• 2005

Multi-walled carbon nanotubes (CNTs) grown on catalyst dots by thermal chemical vapor deposition were vertically aligned with a high population density. Such densely populated CNTs showed poor field emission characteristics due to the electrical screening effect. We reduced the number density of CNTs using an adhesive tape treatment. For dotpatterned CNTs, the tape treatment decreased the CNT density by three orders of magnitude, drastically improved the turn-on electric field from 4.8 to $1.8V/{\mu}m$, and changed the emission image from spotty to uniform luminescence. We also report long-term emission stability of dot-patterned CNTs by measuring the emission currents with time at different duty ratios.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• 제16권12호
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• pp.1125-1130
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• 2003

The electrophoretic deposition method using the suspension solution with additives under the electric potential was applied for the fabrication of YBCO superconductor wire. This method was able to simplify the fabrication facilities, and produce an uniform and dense thick film. To improve the critical current density of deposited films, the additive PEGs(Poly Ethylene Glycole) with the molecular weight of 600, 1000 and 3400 were used as chemical binders for the suspension solution. The organic additive (PEG) showed better effects to the properties of YBCO superconductor wire. The PEG improved the adhesion between superconductor particles and suppressed the crack on the surface, which enhanced the surface uniformity and density of YBCO deposited film. It was found that acetone suspension solution showed better deposition properties than the others. The samples fabricated in the solution with the additive, 8 vol.% of 1% PEG(1000), showed the highest critical current density measured as 2300∼2400 A/$\textrm{cm}^2$ at 77 K, 0 T.

• Proceedings of the IEEK Conference
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• 대한전자공학회 2002년도 ITC-CSCC -2
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• pp.1042-1045
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• 2002

The scaling of device dimension and supply voltage with high performance and reliability has been the main subject in the evolution of VLSI technology, The MOSFET structures become susceptible to high field related reliability problems such as hot-electron induced device degradation and dielectric breakdown. HLDBD(HLD Buffered Deposition) is used to decrease junction electric field in this paper. Also we compared the hot carrier characteristics of HLDBD and conventional.