• JSTS:Journal of Semiconductor Technology and Science
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• 제6권3호
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• pp.210-224
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• 2006

A new analytical model for the static I-V characteristics of GaAs MESFET’s under optically controlled conditions in both linear and saturation region is presented in this paper. The novelty of the model lies in characterizing both photovoltaic (external, internal) and photoconductive effects. Deep level traps in the semi insulating GaAs substrate are also included in this model. Finally, effect of backgate voltage on I-V characteristics is explained analytically for the first time in literature. Small signal parameters of GaAs MESFET are derived under both dark and illuminated conditions. Some of the results are compared with reported experimental results to show the validity of the proposed model. Since accurate dc modeling is the key to accurate ac modeling, this model is very useful in the designing of photonic MMIC’s and OEIC’s using GaAs MESFET.

• Journal of the Semiconductor & Display Technology
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• 제11권1호
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• pp.61-65
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• 2012

In this study, for use of carbon nanotubes (CNTs) as a cold cathode of x-ray tubes, we examine the effects of selective growth of CNTs on their field emission properties and long-term stability. The selective growth of CNTs was performed by selectively etching the catalyst layer which was used for CNTs' nucleation. CNTs were grown on conical-type tungsten substrates using an inductively-coupled plasma chemical vapor deposition system. For all the grown CNTs, their morphologies and microstructures were analyzed by field-emission scanning electron microscope and Raman spectroscopy. The electron-emission properties of CNTs and the long-term stability of emission currents were measured and characterized according to the CNTs' growth position on the substrate.

• Proceedings of the Polymer Society of Korea Conference
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• 한국고분자학회 2006년도 IUPAC International Symposium on Advanced Polymers for Emerging Technologies
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• pp.247-247
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• 2006

Chemical and physical synthesis routes were combined to prepare macroporous thin films of semiconducting metal-oxides such as $CaCu_{3}Ti_{4}O_{12}\;and\;TiO_{2}$ by sputtering onto (PMMA) microsphere templated substrates. Subsequently, the colloidal templates were removed by thermal decomposition. The remaining inorganic films comprised a monolayer of hollow hemispheres with diameter commensurate with that of the microspheres. This unique morphology increases the surface area and reduces the interfacial area between film and substrate. Consequently, the surface activity is markedly enhanced while deleterious interfacial effects between film and substrate are significantly reduced. Both effects are highly advantageous for gas sensing applications.

• Environmental Engineering Research
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• 제10권2호
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• pp.79-87
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• 2005

The effects of transformation capacity on cometabolic degradation of trichloroethene (TCE) were evaluated using TCE-degrading actinomycetes pure and mixed culture under various culture conditions. The TCE transformation capacity of the actinomycetes enrichment culture in a batch test with phenol addition was 1.0 mg of TCE/mg of volatile suspended solids (VSS). The resting cell TCE transformation capacity of the actinomycetes pure culture cell was 0.75 mg TCE/mg VSS, which increased to 2.0 mg TCE/mg VSS when phenol was added as an external substrate. When the pure culture had an internal substrate in the form of poly-β-hydroxybutyrate (PHB) at 19% of the cell mass, the resting cell TCE transformation capacity increased from 0.47 to 0.6 mg TCE/mg VSS. The presence of PHB increased transformation capacity by 57%, whereas, the addition of phenol caused more than two fold increase in transformation capacity. The actinomycetes culture showed the highest transformation capacity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.258-258
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• 2010

In this work, back bias effects in the program of the silicon-oxide-nitride-oxide-silicon (SONOS) cell using two-step pulse sequence, are investigated. Two-step pulse sequence is composed of the forward biases for collecting the electrons at the substrate terminal and back bias for injecting the hot electrons into the nitride layer. With an aid of the back bias for electron injection, we obtain a program time as short as 600 ns and an ultra low-voltage operation with a substrate voltage of -3 V.

• Transactions of Materials Processing
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• 제9권2호
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• pp.103-111
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• 2000

It is necessary to improve mechanical and optical properties in the optical disk substrates as the information storage density using short wavelength laser are being developed. The birefringence distribution is regarded as one of the most important optical properties for optical disk. In the present study, the birefringence distrubution is calculated using the Leonov model for viscoelastic constitutive equations and Cross/WLF model for viscosity approximation. The effects of processing conditions upon the development of birefringence discosity approximation. The effects of processing conditions upon the development of birefringence distribution in the optical disk were examined theoretically. It was found that the values of the birefringence distributions were very sensitive to the mold wall temperature history which minimizes the birefringence distribution. The analytical results showed the possibility of improving mechanical and optical properties in the optical disk substrates by active control of the mold wall temperature history.

• Korean Chemical Engineering Research
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• 제55권2호
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• pp.275-278
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• 2017

Heterogeneous semiconductor composites have been widely used to establish high-performance microelectronic or optoelectronic devices. During a deposition of silicon atoms on silicon/germanium compound surfaces, germanium (Ge) atoms are segregated from the substrate to the surface and are mixed in incoming a silicon layer. To suppress Ge segregation to obtain the interface sharpness between silicon layers and silicon/germanium composite layers, approaches have used silicon hydride gas species. The hydrogen atoms can play a role of inhibitors of silicon/germanium exchange. However, there are few kinetic models to explain the hydrogen effects. We propose using segregation probability which is affected by hydrogen atoms covering substrate surfaces. We derived the model to predict the segregation probability as well as the profile of Ge fraction through layers by using chemical reactions during silicon deposition.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.372-373
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• 2009

In this work, the effects of substrate on the formation of YBaCuO by CVD were investigated by observing the microstructure and the crystallographic orientation and by measuring the temperature dependence of electrical resistance. Source materials used to synthesize the YBaCuO superconducting film were beta-diketone chelates of Y, Ba and Cu. These chelates were evaporated at $137-264^{\circ}C$. The source vapors of Y, Ba and Cu were transported into hot zone by using Ar gas and $O_2$ gas was introduced separately.

• Bulletin of the Korean Chemical Society
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• 제6권2호
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• pp.99-102
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• 1985

Substituent effects of substrate and nucleophile for the reaction of substituted phenacyl tosylates with pyridines were determined conductometrically in acetonitrile. Activation parameters for these reactions were also calculated. The substituent effects in nucleophile were increased with electron-donating power of pyridines and Br${\o}$nsted linear relationship was shown. Rate constant was increased by both electron-donating and electron-attracting groups in the substrate. It seems that dissociative S$_{N}$2 ("loose" transition state) mechanism is operating in the case of electron-donating substituents while associative S$_{N}$2 ("tight" transition state) mechanism is operative in the case of electron-attracting substituents.

• Journal of Information Display
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• 제13권1호
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• pp.1-6
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• 2012

Decreasing the thermal resistance is the critical issue for high-brightness light-emitting diodes. In this paper, the effects of some design factors, such as chip size (24 and 35 mil), substrate material (AlN and high-temperature co-fired ceramic), and die-attach material (Ag epoxy and PbSn solder), on the thermal-dissipation characteristics were investigated. Using the thermal transient method, the temperature sensitivity parameter, $R_{th}$ (thermal resistance), and junction temperature were estimated. The 35-mil chip showed better thermal dissipation, leading to lower thermal resistance and lower junction temperature, owing to its smaller heat source density compared with that of the 24-mil chip. By adopting an AlN substrate and a PbSn solder, which have higher thermal conductivity, the thermal resistance of the 24-mil chip can be decreased and can be made the same as that of the 35-mil chip.