• Title/Summary/Keyword: effective field

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Variation of Effective SSD According to Electron Energies and Irradiated Field Sizes (전자선 에너지 및 조사야에 따른 유효선원 피부 간 거리 변화)

  • Yang, Chil-Yong;Yum, Ha-Yong;Jung, Tae-Sik
    • Radiation Oncology Journal
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    • v.5 no.2
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    • pp.157-163
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    • 1987
  • It is known that fixed source to skin distance (SSD) cannot be used when the treatment field is sloped or larger than the size of second collimator in electron beam irradiation and inverse square law using effective ssd should be adopted. Effective SSDs were measured in different field sizes in each 6, 9, 12, 15 and 18MeV electron energy by suing NELAC 1018D linear accelerator of Kosin Medical Center. We found important parmeters of effective SSD. 1. Minimum effective SSD was 58.8cm in small field size of $6\pm6cm$ and maximum effective SSD was 94.9cm in large field size of $25\pm25cm$, with 6MeV energy. It's difference was 36.1cm. The dose rate at measuring point was quite different even with a small difference of SSD in small field $(6\times6cm)$ and low energy (6 MeV). 2. Effective SSD increased with field size in same electron energy. 3. Effective SSDs gradually increased with the electron energies and reached maximum at 12 or 15 MeV electron energy and decreased again at 18MeV electron energy in each identical field size. And so the effective SSD should be measured in each energy and field size for practical radiotherapy.

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Degradation Characteristics of Mobility in Channel of P-MOSFET's by Hot Carriers (핫 캐리어에 의한 피-모스 트랜지스터의 채널에서 이동도의 열화 특성)

  • 이용재
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.1
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    • pp.26-32
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    • 1998
  • We have studied how the characteristics degradation between effective mobility and field effect mobility of gate channel in p-MOSFET's affects the gate channel length being follow by increased stress time and increased drain-source voltage stress. The experimental results between effective and field-effect mobility were analyzed that the measurement data are identical at the point of minimum slope in threshold voltage, the other part is different, that is, the effective mobility it the faster than the field-effect mobility. Also, It was found that the effective and field-effect mobility. Also, It was found that the effective and field-effect mobility of p-MOSFET's with short channel are increased by decreased channel length, increased stress time and increased drain-source voltage stress.

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Effective Channel Mobility of AlGaN/GaN-on-Si Recessed-MOS-HFETs

  • Kim, Hyun-Seop;Heo, Seoweon;Cha, Ho-Young
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.16 no.6
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    • pp.867-872
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    • 2016
  • We have investigated the channel mobility of AlGaN/GaN-on-Si recessed-metal-oxide-semiconductor-heterojunction field-effect transistors (recessed-MOS-HFET) with $SiO_2$ gate oxide. Both field-effect mobility and effective mobility for the recessed-MOS channel region were extracted as a function of the effective transverse electric field. The maximum field effect mobility was $380cm^2/V{\cdot}s$ near the threshold voltage. The effective channel mobility at the on-state bias condition was $115cm^2/V{\cdot}s$ at which the effective transverse electric field was 340 kV/cm. The influence of the recessed-MOS region on the overall channel mobility of AlGaN/GaN recessed-MOS-HFETs was also investigated.

Effective Hamiltonian of Doubly Perturbed Systems

  • Sun, Ho-Sung;Kim, Un-Sik;Kim, Yang
    • Bulletin of the Korean Chemical Society
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    • v.6 no.5
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    • pp.309-311
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    • 1985
  • When a molecule is perturbed by an external field, the perturbed moecue can be described as a doubly perturbed system. Hartree-Fock operator in the absence of the field is the zeroth order Hamiltonian, and a correlation operator and the external field operator are perturbations. The effective Hamiltonian, which is a projection of the total Hamiltonian onto a small finite subspace (usually a valence space), has been formally derived. The influence of the external field to the molecular Hamiltonian itself has been examined within an effective Hamiltonian framework. The first order effective expectation values, for instance electromagnetic transition amplitudes, between valence states are found to be easily calculated - by simply taking matrix elements of the effective external field operator. Implications of the terms in perturbation expansion are discussed.

A Study of the Sequence of Figure Transformation Learning (도형의 변환학습의 순차성 고찰)

  • Park Sung Teak
    • The Mathematical Education
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    • v.17 no.2
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    • pp.1-13
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    • 1979
  • This study aimed at studying the sequence of the Figure Transformation Learning, inquiring relationship among these transformations and then researching whether there is the difference of the learning ability or not between by teaching them as it is independent and by teaching them as it is contains. (Hypothesis 1) It may be more effective to teach The Sequence of Transformation Learning by beginning with peculiar field, ending with general field than vice versa At the result of verification-C $R_{M}$=2.59, 0.005$R_{M}$=5.19, p<0.005-significant difference appeared. It is proved more effective to teach the Figure Transformation Learning the way it contains than the way it is independent. Synthesizing two hypothesises of the above, the conclusion is following The Figure Transformation Learning should be taught by beginning with peculiar field. ending with general field (congruent transformationlongrightarrowsimilar transformationlongrightarrowprojective transformationlongrightarrowtopological transformation). To teach it the way it contains is more effective.ive.

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Field-domain dynamics and current self-oscillations in negative-effective-mass terahertz oscillators

  • Cao, J.C.;Qi, M.
    • Journal of the Korean Vacuum Society
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    • v.12 no.S1
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    • pp.36-39
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    • 2003
  • Field-domain dynamics and current self-oscillations are theoretically studied in quantum-well (QW) negative-effective-mass (NEM) $p^{+}pp^{+}$ diodes when the electric field is applied along the direction of the well. The origin of current self-oscillations is the formation and traveling of electric-field domains in the p-base. We have accurately considered the scattering contributions from carrier-impurity, carrier-acoustic phonon, and carrier-optic phonon. It's indicated that, both the applied bias and the doping concentration largely influence the current patterns and self-oscillating frequencies, which lie in the THz range for the NEM $p^{+}pp^{+}$ diode with a submicrometer p-base. The complicated field-domain dynamics is presented with the applied bias as the controlling parameter.

Design of an Optical System for a Space Target Detection Camera

  • Zhang, Liu;Zhang, Jiakun;Lei, Jingwen;Xu, Yutong;Lv, Xueying
    • Current Optics and Photonics
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    • v.6 no.4
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    • pp.420-429
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    • 2022
  • In this paper, the details and design process of an optical system for space target detection cameras are introduced. The whole system is divided into three structures. The first structure is a short-focus visible light system for rough detection in a large field of view. The field of view is 2°, the effective focal length is 1,125 mm, and the F-number is 3.83. The second structure is a telephoto visible light system for precise detection in a small field of view. The field of view is 1°, the effective focal length is 2,300 mm, and the F-number is 7.67. The third structure is an infrared light detection system. The field of view is 2°, the effective focal length is 390 mm, and the F-number is 1.3. The visible long-focus narrow field of view and visible short-focus wide field of view are switched through a turning mirror. Design results show that the modulation transfer functions of the three structures of the system are close to the diffraction limit. It can further be seen that the short-focus wide-field-of-view distortion is controlled within 0.1%, the long-focus narrow-field-of-view distortion within 0.5%, and the infrared subsystem distortion within 0.2%. The imaging effect is good and the purpose of the design is achieved.

Arithmetic of finite fields with shifted polynomial basis (변형된 다항식 기저를 이용한 유한체의 연산)

  • 이성재
    • Journal of the Korea Institute of Information Security & Cryptology
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    • v.9 no.4
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    • pp.3-10
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    • 1999
  • More concerns are concentrated in finite fields arithmetic as finite fields being applied for Elliptic curve cryptosystem coding theory and etc. Finite fields arithmetic is affected in represen -tation of those. Optimal normal basis is effective in hardware implementation and polynomial field which is effective in the basis conversion with optimal normal basis and show that the arithmetic of finite field with the basis is effective in software implementation.

A Study for the Effective Industry Field Training Management (효율적인 산업체 현장실습 운영에 대한 연구)

  • Lee, Moon-Goo
    • 전자공학회논문지 IE
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    • v.48 no.3
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    • pp.33-39
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    • 2011
  • Field training system is an establishment for improving practical ability of college students. That system is a learning experience that are relative to university's regular educational curriculum and industry field training. In order to practice an effective field training system, lots of helps from company, college, students and government's interest are needed. But, in most industry fields, it is hard to accept field training manpower in condition of that has no extra guaranteed budget or staff for field training. Because of it, the biggest matter of college the industry field training is to maintain industry fields. Although students want to be paid properly in industry fields where are furnished the advance facilities and equipments and participated in practices, it is extremely hard situation to achieve it in reality. In this way, the management of industry field training has realistic difficult problems, but it is a necessary system. Therefore, in this paper, methodology and model for industry field training management process are suggested in order to administer effective industry field training. If the industry field training are managed by those system mentioned above, students will have chance to exert their creativeness and speediness through field experience, and industry fields where students can get various dimensions of education are expected to manage.

Measurement of Effective Refractive Index of Nematic Liquid Crystal in Fabry-Perot Etalon

  • Ko, Myeong Ock;Kim, Sung-Jo;Kim, Jong-Hyun;Lee, Bong Wan;Jeon, Min Yong
    • Journal of the Optical Society of Korea
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    • v.19 no.4
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    • pp.346-350
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    • 2015
  • We report a measurement of the effective refractive index of a nematic liquid crystal (NLC) inside a Fabry-Perot (FP) etalon according to the applied electric fields. The effective refractive index of the NLC depends on the intensity of the applied electric field. A wavelength-swept laser with a polygon-scanner-based wavelength filter is used as a wide-band optical source to measure the effective refractive index of the NLC. The bandwidth of the optical source is greater than 90 nm around 1300 nm. The fabricated NLC FP etalon consists of glass substrates, gold layers as the electrodes with highly reflective surfaces, polyimide layers as the planar alignment layers, and an LC layer. Furthermore, we measured the Freedericksz transition voltages for three types of NLC FP etalons having thicknesses of $30.6{\mu}m$, $55.4{\mu}m$, and $108.8{\mu}m$. The Freedericksz transition voltages in the three cases are nearly equal. The measured effective refractive indices in the three cases decreased from 1.67 to 1.51 as the applied electric field intensity was increased. Beyond the threshold electric field, the effective refractive indices quickly decreased and eventually saturated at a value of 1.51 for all cases.