• Korean Journal of Materials Research
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• v.8 no.11
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• pp.987-992
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• 1998

Titanium aluminide intermetallic compound was formed from high purity elemental Ti and A1 foils by selfpropagating, high-temperature synthesis(SHS1 in hot press. Formation of $TiAl_3$ intermetallics at the interface between Ti and Al foil was observed to be controlled by temperature, pressure and heating rate. Especially, the heating rate is the most important role to form intermetallic compound by SHS reaction. According to DTA experiment, the SHS reactions appeared at two different temperatures below and above the melting point of Al. It was also observed that both SHS reaction temperatures increased with increasing the heating rate. After the SHS reaction of alternatively layered 10 Ti and 9 A1 foils at the heating rate of $20^{\circ}C$/min, the $700\mu\textrm{m}$ thick titanium aluminide sheet was formed by heat treatment at $810^{\circ}C$ for 4hours.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.76-77
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• 2005

Single crystal $CuAlSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at 410$^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $CuAlSe_2$ source at $680^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence(PL) and double crystal X-ray diffraction (DCXO). The temperature dependence of the energy band gap of the $CuAlSe_2$ obtained from the absorpt ion spectra was wel1 described by the Varshni's relation, $E_g$(T) = 2.8382 eV - ($8.86\times10^{-4}$ eV/H)$T_2$/(T + 155K). After the as-grown single crystal $CuAlSe_2$ thin films were annealed in Cu-, Se-, and Al-atmospheres, the origin of point defects of single crystal $CuAlSe_2$ thin films has been investigated by PL at 10 K. The native defects of $V_{cd}$, $V_{se}$, $Cd_{int}$, and $Se_{int}$ obtained by PL measurements were classified as donors or acceptors. And we concluded that the heat-treatment in the Cu-atmosphere converted single crystal $CuAlSe_2$ thin films to an optical n-type. Also. we confirmed that hi in $CuAlSe_2$/GaAs did not form the native defects because Al in single crystal $CuAlSe_2$ thin films existed in the form of stable bonds.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 1999.05a
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• pp.5-5
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• 1999

A novel process is proposed to improve oxidation resistance of Ti-Al intermetallic compounds at elevated temperatures by both Cr addition and pre-sulfidation, where TiAl alloys withlor without Cr addition were sulfidized at 1173K for 86.4ks at a 1.3 Pa sulfur partial pressure in a $H_2-H_2S$ gas mixture. The pre-sulfidation treatment formed a thin Cr-Al alloy layer as well as 7~10 micrometer $TiAl_3$ and $TiAl_2$ layer, due to selective sulfidation of Ti. Oxidation resistance of the pre-sulfidation processed TiAl 4Cr alloy was examined under isothermal and heat cycle conditions between room temperature and 1173K in air. Changes in $TiAl_3$ into $TiAl_2$ and then TiAl phases as well as their effect on oxidation behavior were investigated and compared with the oxidation behavior of the TiAl-4Cr alloy as TiAl and pre-sulfidation processed TiAl aHoys. After oxidation for up to 2.7Ms a protective $Al_2O_3$ scale was formed, and the pre-formed $TiAl_3$ changed into $TiAl_2$ and the $Al_2Cr$ phase changed into a CrAlTi phase between the $Al_2O_3$ scale and $TiAl_2$ layer. The pre-sulfidation processed TiAl-4Cr alloy had very good oxidation resistance for longer times, up to 2.7 Ms, in contrast to those observed for the pre-sulfidation processed TiAl alloy where localized oxidation occurred after 81 Oks and both the TiAl and TiAl-4Cr alloys themselves corroded rapidly from the initial stage of oxidation

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.79-80
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• 2007

To obtain the single crystal thin films, $AgGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C\;and\;420^{\circ}C$, respectively. The temperature dependence of the energy band gap of the $AgGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 1.9501 eV - ($8.79{\times}10^{-4}$ eV/K)$T^2$/(T + 250 K). After the as-grown $AgGaSe_2$ single crystal thin films was annealed in Ag-, Se-, and Ga-atmospheres, the origin of point defects of $AgGaSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{Ag},\;V_{Se},\;Ag_{int},\;and\;Se_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Ag-atmosphere converted $AgGaSe_2$ single crystal thin films to an optical p-type. Also, we confirmed that Ga in $AgGaSe_2$/GaAs did not form the native defects because Ga in $AgGaSe_2$ single crystal thin films existed in the form of stable bonds.

• Korean Journal of Materials Research
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• v.22 no.10
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• pp.513-518
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• 2012

Recently, automobile parts have been required to have high strength and toughness to allow for weight lightening or improved stability. But, traditional micro-alloyed steel cannot be applied in automobile parts. In this study, we considered the influence of quenching temperature and cooling rate for specimens fabricated by vacuum induction furnace. Directly quenched micro-alloyed steel for hot forging can be controlled according to its micro structure and the heat-treatment process. Low carbon steel, as well as alloying elements for improvement of strength and toughness, was used to obtain optimized conditions. After hot forging at $1,200^{\circ}C$, the ideal mechanical properties (tensile strength ${\geq}$ 1,000 MPa, Charpy impact value ${\geq}\;100\;J/cm^2$) can be achieved by using optimized conditions (quenching temperature : 925 to $1,050^{\circ}C$, cooling rate : ${\geq}\;5^{\circ}C/sec$). The difference of impact value according to cooling rate can be influenced by the microstructure. A fine lath martensite micro structure is formed at a cooling rate of over $5^{\circ}C/sec$. On the other hand, the second phase of the M-A constituent microstructure is the cause of crack initiation under the cooling rate of $5^{\circ}C/sec$.

• 한국신재생에너지학회:학술대회논문집
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• 2006.06a
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• pp.465-469
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• 2006

Two mesophilic trickling bed bioreactors filled with two different types of media, hydrophilic- and hydrophobic-cubes, were designed and tested for hydrogen production via anaerobic fermentation of sucrose. Each reactor consisted of a column packed with polymeric cubes and inoculated with heat-treated sludge obtained from anaerobic digestion tank. A defined medium containing sucrose was fed with changing flow rate into the capped reactor, hydraulic retention time and recycle rate. Hydrogen concentrations in gas-phase were constant, averaging 40% for all conditions tested. Hydrogen production rates increased up to $10.5 L{\cdot};h^{-1}{\cdot}L^{-1}$ of reactor when influent sucrose concentrations and recycle rates were varied. Hydrophobic media provided higher value of hydrogen production rate than hydrophilic media at the same operation conditions. No methane was detected when the reactor was under a normal operation. The major fermentation by-products in the liquid effluent of the both trickling biofilters were acetate and butyrate. The reactor filled with hydrophilic media became clogged with biomass and bio gas, requiring manual cleaning of the system, while no clogging occurred in the reactor with hydrophobic media. In order to make long-term operation of the reactor filled with hydrophilic media feasible, biofilm accumulation inside the media in the reactor with hydrophilic media and biogas produced from the reactor will need to be controlled through some process such as periodical backwashing or gas-purging. These tests using trickling bed biofilter with hydrophobic media demonstrate the feasibility of the process to produce hydrogen gas in a trickle-bed type of reactor. A likely application of this reactor technology could be hydrogen gas recovery from pre-treatment of high carbohydrate-containing wastewaters.

• IMMUNE NETWORK
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• v.16 no.1
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• pp.75-84
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• 2016

Cancer is one of the leading causes of morbidity and mortality worldwide; therefore there is a need to discover new therapeutic modules with improved efficacy and safety. Immune-(cell) therapy is a promising therapeutic strategy for the treatment of intractable cancers. The effectiveness of certain chemotherapeutics in inducing immunogenic tumor cell death thus promoting cancer eradication has been reported. Ginsenoside Rg3 is a ginseng saponin that has antitumor and immunomodulatory activity. In this study, we treated tumor cells with Rg3 to verify the significance of inducing immunogenic tumor cell death in antitumor therapy, especially in DC-based immunotherapy. Rg3 killed the both immunogenic (B16F10 melanoma cells) and non-immunogenic (LLC: Lewis Lung Carcinoma cells) tumor cells by inducing apoptosis. Surface expression of immunogenic death markers including calreticulin and heat shock proteins and the transcription of relevant genes were increased in the Rg3-dying tumor. Increased calreticulin expression was directly related to the uptake of dying tumor cells by dendritic cells (DCs): the proportion of CRT⁺CD11c⁺cells was increased in the Rg3-treated group. Interestingly, tumor cells dying by immunogenic cell death secreted IFN-γ, an effector molecule for antitumor activity in T cells. Along with the Rg3-induced suppression of pro-angiogenic (TNF-α) and immunosuppressive cytokine (TGF-β) secretion, IFN-γ production from the Rg3-treated tumor cells may also indicate Rg3 as an effective anticancer immunotherapeutic strategy. The data clearly suggests that Rg3-induced immunogenic tumor cell death due its cytotoxic effect and its ability to induce DC function. This indicates that Rg3 may be an effective immunotherapeutic strategy.

• Korean Journal of Food Science and Technology
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• v.54 no.3
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• pp.306-312
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• 2022

To test bee pollen as an ingredient for heat-processed foods, bee pollen was puffed under heat at various pressures and examined for its physicochemical properties and antioxidant activities. As the puffing intensity increased, the browning index, total reducing capacity, and DPPH radical scavenging activity of the bee pollen increased significantly (p<0.001). This was attributed to the formation of Maillard reaction products during the puffing process. The wheat flour-puff yeot-gangjeong added with puffed bee pollen showed significantly (p<0.01) higher antioxidant activities than its counterpart with raw bee pollen. In addition, the gangjeong retained the physicochemical characteristics of the puffed bee pollen such as color, soluble solids, titratable acidity, and pH. The results showed that the puffed bee pollen could potentially be used as an ingredient in thermally processed foods and retain its superior antioxidant properties.

• Korean Journal of Materials Research
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• v.12 no.2
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• pp.153-159
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• 2002

The co-deposited behavior was investigated under varied bath compositions and current densities from Watt Ni plating bath containing Al and A1$_2$O$_3$powders. For single-particle bath, Al and A1$_2$O$_3$particles were agglomerated. The area percentage of A1$_2$O$_3$on plating surface decreased with increasing the current density, while that of Al on plating surface increased. On the other hand, in case of double-particle bath with 1.25g/$\ell$ of Al and 5.0g/$\ell$ of A1$_2$O$_3$5g, the area percentage of Ni-Al-A1$_2$O$_3$increased with increasing current density and the surface morphology was fine without agglomeration. Intermetallic compounds such as $\gamma$'and $\gamma$+$\gamma$' phases appeared when the co-deposited film was annealed.

• Korean Journal of Materials Research
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• v.14 no.11
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• pp.755-763
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• 2004

A stoichiometric mixture of evaporating materials for $CuInse_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuInse_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C\;and\;410^{\circ}C$, respectively. The temperature dependence of the energy band gap of the $CuInse_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)=1.1851 eV - (8.99{\times}10^{-4} eV/K)T^2/(T+153 K)$. After the aa-grown $CuInse_2$ single crystal thin films was annealed in Cu-, Se-, and In-atmospheres, the origin of point defects of $CuInse_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{cu},\;V_{Se},\;Cu_{int},\;and\;Se_{int}$ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuInse_2$ single crystal thin films to an optical n-type. Also, we confirmed that In in $CuInse_2$/GaAs did not form the native defects because In in $CuInse_2$ single crystal thin films existed in the form of stable bonds.