• Journal of Biosystems Engineering
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• v.24 no.5
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• pp.453-462
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• 1999

At the time of discontinuing the publishing of RDA Journal of Farm management and agricultural engineering the present paper is to review the research results produced since 1962 to 1998. During the three decades, from 1960s to 1980s, the main research efforts were focused o mechanization of rice farming which contributed in food grain productions. In the 1990s, the research direction was shifted to horticultural productions and producing high quality agricultural products. We had put stress on practical use of farm mechanization, mainly on transplanting and seeding operation for rice and upland and horticultural crops productions and harvest and threshing machinery developments, in which we thought our research direction had not been quite right. However, in the future we are going to promote mechanization on livestock and upland crops productions. Furthermore, we have a plan to employ cutting edge technologies in agricultural machinery developments in order to automate and unman all farm operations satisfying the needs of advanced agricultural mechanization technology in the twenty first century.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.322.2-322.2
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• 2014

Lighting emitting diodes of n-ZnO/MQW/p-GaN structure are fabricated and investigated. To realize this LED structure, n-ZnO/MQW/p-GaN are grown by MOCVD. At several bias voltages, blue-green light is emitted from the ZnO mesa edge. However, the emission is restricted near the mesa edge. It is seen that the hole current does not spread well. It is because conductivity of p-GaN is extremely small. The break down voltage of the device is small compared to conventional InGaN/GaN LEDs. It is seen that ZnO columnar grain boundaries act as leakage current paths and non-radiative recombination center.

• Journal of Korea Multimedia Society
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• v.16 no.7
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• pp.852-861
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• 2013

When users use medical volume rendering applications, selecting specific region of volume data and observing the region by magnification is a common process.As the wood-grain artifact is arise from the magnified image, the jittered sampling technique has been used to remove the problem. However, the jittered sampling leads to some noise along the volume edge. In this research, we reveal the reason of the noise, and present a solution. To remove the wood-grain artifact without the noise, we propose the empty space jittering and the sampling alignment method. Using these methods, we can produce high quality volume rendering images without noticeable time consuming.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.12
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• pp.962-968
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• 2011

In this study, we investigated the effects of Mn dopant (0.1~3.0 at% $Mn_3O_4$ sintered at 1000$^{\circ}C$ for 1 h in air) on the bulk trap (i.e. defect) and grain boundary properties of ZnO, ZM(0.1~3.0) using admittance spectroscopy (AS), and impedance-modulus spectroscopy (IS & MS). As a result, three kinds of defect were found below the conduction band edge of ZnO as 0.09~0.14 eV (attractive coulombic center), 0.22~25 eV ($Zn^{{\cdot}{\cdot}}_i$), and 0.32~0.33 eV ($V^{\cdot}_o$). The oxygen vacancy increased with Mn doping. In ZM, an electrically single grain boundary as double Schottky barrier was formed with 0.82~1.0 eV of activation energies by IS & MS. We also find out that the barriers of grain boundary of Mn-doped ZnO (${\alpha}$-factor=0.13) were more stabilized and homogenized with temperature compared to pure ZnO.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.11
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• pp.949-955
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• 2009

In this study, we investigated the effects of Cr dopant (1.0 at% $Cr_2O_3$ sintered at $1000^{\circ}C$ for 1 h in air) on the bulk trap (i.e. defect) and interface state levels of ZnO using dielectric functions ($Z^*$, $M^*$, $Y^*$, $\varepsilon^*$, and $tan{\delta}$), admittance spectroscopy (AS), and impedance-modulus spectroscopy (IS & MS). For the identification of the bulk trap levels, we examine the zero-biased admittance spectroscopy and dielectric functions as a function of frequency and temperature. Impedance and electric modulus spectroscopy is a powerful technique to characterize grain boundaries of electronic ceramic materials as well. As a result, three kinds of bulk defect trap levels were found below the conduction band edge of ZnO in 1.0 at% Cr-doped ZnO (Cr-ZnO) as 0.11 eV, 0.21 eV, and 0.31 eV. The overlapped defect levels ($Zn^{..}_i$ and $V^{\cdot}_0$) in admittance spectra were successfully separated by the combination of dielectric function such as $M^*$, $\varepsilon^*$, and $tan{\delta}$. In Cr-ZnO, the interfacial state level was about 1.17 eV by IS and MS. Also we measured the resistance ($R_{gb}$) and capacitance ($C_{gb}$) of grain boundaries with temperature using impedance-modulus spectroscopy. It have discussed about the stability and homogeneity of grain boundaries using distribution parameter ($\alpha$) simulated with the Z"-logf plots with temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.71-71
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• 1999

현재 소자 제작에 응용되는 수소화된 비정질 실리콘은 PECVD 방법으로 제작하는 것이 보편적인 방법이다. 그러나 비정질 실리콘 박막 트랜지스터는 band gap edge 근처에서 국재준위가 많아 mobility가 작으며 상온에서 조차 불안정하여 신뢰성이 높지 않고, 도핑된 비정질 실리콘의 높은 비저항 등의 단점으로 인하여 고속 회로에 응용이 불가능하다. 반면 다결정질 실리콘 박막 트랜지스터는 a-Si:H TFT 에 비해 재현성이 우수하고 high resolution, high resolution, high contrast LCD에 응용할 수 있다. 하지만, 다결정 실리콘의 grain boundary로 인해 단결정에 비해 많은 defect 들이 존재하여 전도성을 감소시킨다. 따라서 Mobility를 증가시키기 위해서 grain size를 증가시키고 grain boundary 내에 존재하는 trap center를 감소시켜야 한다. 따라서 본 실험에서는 PECVD 장비로 초기 기판을 plasma 처리하여 다결정 실리콘 박막을 제작하여, 기판 처리에 대한 다결정 실리콘 박막의 성장의 특성을 조사하였다. 실험 방법으로는 PECVD 시스템을 이용하여 SiH4 gas와 H2 gas를 선택적으로 증착시키는 LBL 방법을 사용하여 $\mu$c-Si:H 박막을 제작하였다. 비정질 층을 gas plasma treatment 하여 다결정질 실리콘의 증착 initial stage 관찰을 주목적으로 관찰하였다. 다결정 실리콘 박막의 구조적 성질을 조사하기 위하여 Raman, AFM, SEM, XRD를 이용하여 grain 크기와 결정화도에 대해 측정하여 결정성장 mechanism을 관측하였다. LBL 방법으로 증착시킨 박막의 Raman 분석을 통해서 박막 증착 초기에 비정질이 증착된 후에 결정질로 상태가 변화됨을 관측할 수 있었고, SEM image를 통해서 증착 회수를 증가시키면서 grain size가 작아졌다 다시 커지는 현상을 볼 수 있었다. 이 비정질 층의 transition layer를 gas plasma 처리를 통해서 다결정 핵 형성에 영향을 관측하여 적정한 gas plasma를 통해서 다결정질 실리콘 박막 증착 공정을 단축시킬 수 있는 가능성을 짐작할 수 있었고, 또한 표면의 roughnes와 morphology를 AFM을 통하여 관측함으로써 다결정 박막의 핵 형성에 알맞은 증착 표면 특성을 분석 할 수 있었다.

• Korean Journal of Materials Research
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• v.9 no.1
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• pp.86-91
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• 1999

We have fabricated high-$\textrm{T}_c$ superconducting $\textrm{YBa}_{2}\textrm{Cu}_{3}\textrm{O}_{7-x}$(YBCO) grain boundary junctions at a step-edge on (001) $\textrm{SrTiO}_3$(STO) substrates. A diamond-like carbon (DLC) film grown by plasma enhanced chemical vapor deposition were used as an ion milling mask to make steps on the STO (100) single crystal and was removed by an oxygen reactive ion etch process. The c-axis oriented YBCO and TO thin films were deposited epitaxially on the STO substrate with a step-edge by pulsed laser deposition. The grain boundary junctions were formed at the top and the bottom of the step. The junctions worked at temperatures above 77 K, and had I\ulcornerR\ulcorner products of 7.5mV at 16K and 0.3 mV at 77K, respectively. The I-V characteristics of these junctions showed the shape of the two noisy resistively shunted junction model.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.1 no.1
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• pp.26-38
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• 1991

The fundamental conditions for growing $r-6Bi_2O_3{\cdot}SiO_2$(BSO) single crystal plates by EFG(Edge-defined Film-fed Growth) method, were investigated and characterization, quality test, property measurement were performed for obtained BSO single crystal plates. The opti$\mu$ growing conditions determined in this study were as follows: ${\cdot}$temperature gradient;$24^{\circ}C/cm$ ${\cdot}$pulling rate;2.0mm/h. BSO Single crystal plates grown at the above optimum conditions did not include secondary phase or grain boundary and were confirmed as single crystals by X-ray analysis. IT was found that the single crystal plates had <100> growth direction. G defects, ie pore, void inclusion, striation, were not detected in the single crystal plate under polarizing microscope but dislocations(microscopic defect) were found and dislocation density was $5.1\times10^5/cm^2$.

• Journal of Korea Foundry Society
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• v.34 no.5
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• pp.170-178
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• 2014

Using the Gleeble test, the effects of [Mn/S] ratios and the presence of sulfides on the high-temperature fracture morphology of heavy-section steel castings were analysed via the observations of the microstructures. The specimens for which the [Mn/S] ratio was in the range of 60~80 showed a ductile fracture morphology with an area reduction of more than 60%, while some specimens with similar [Mn/S] ratios showed a brittle fracture morphology with an area reduction of 0.0% due to the liquidation of sulfides at the grain boundary. The fracture morphology was classified into three types in the Gleeble high-temperature tensile test specimens. The first type showed dimple formation at the grain boundary, the formation of globular MnS sulfides, and plastic deformation of sulfides at an elevated temperature, indicating a needle-point type of ductile fracture with area reductions of 96.0~97.8%. The second type was a knife-edge type brittle fracture with an area reduction of 0.0% due to the film-type liquidation of sulfides at the grain boundary, band-type liquidation, and the liquidation of a terraced nipple pattern. The third type was the typical ductile fracture with an area reduction of 31.3~81.0%, in accordance with the mixture of dimples with in the grains and terraced nipple pattern at the grain boundary.

• Journal of Welding and Joining
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• v.33 no.5
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• pp.26-30
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• 2015

Hastelloy X in this study was applied in jet engine F-15 air fighter as shroud to isolate the engine from outer skin. After 15 years operation at elevated temperature the mechanical properties decreased gradually due to the precipitation of continues second phases in the grain boundaries and precipitated inside the grain. The crack happened at the edge of the shroud due to the thermal and mechanical stress from jet engine. Selective TEM analysis found that the grain boundaries consist of $M_{23}C_6$ carbide, $M_6$ Ccarbide and small percentage of sigma(${\sigma}$) phase. Furthermore, it was confirmed the nano size of ${\sigma}$ and miu (${\mu}$) phase inside the grain. In this study, it was investigated the microstructure of the degraded shroud component and HAZ of repair welded shroud. In the HAZ, it was observed the dissolution of the $M_{23}C_6$ carbides and smaller precipitates, the migration of the undissolved larger $M_{23}C_6$ carbide and $M_6$ Ccarbide. It is also observed the liquation due to the simply melt of the segregated precipitates in the grain boundaries. Interestingly, the segregated second phases which simply melt in the grain boundaries more easily happened at higher heat input welding condition. High temperature tensile test was done at $300^{\circ}C$, $700^{\circ}C$ and $900^{\circ}C$. It was obtained that the toughness of welded sample is lower compare to the non-welded sample. The solution heat treatment at $1170^{\circ}C$ for 5 minutes was suggested to obtain a better mechanical properties of the shroud. The high cycle fatigue number of the repair welded shroud shows a much lower compare to the shroud. In addition, the high cycle fatigue number at room temperature after solution heat treatment was almost double compare to the before solution heat treatment under 420-500MPa stress amplitude. However, the high cycle fatigue number of repaired welded sample was shown a much lower compare to the non- welded shroud and solution treated shroud. One of the main reasons to decrease the tensile strength and the high cycle fatigue properties of the repair welded shroud is the formation of the liquid phase in HAZ.