• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.210-210
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• 2011

The effects of CH2F2 and N2 gas flow rates on the etch selectivity of silicon nitride (Si3N4) layers to extreme ultra-violet (EUV) resist and the variation of the line edge roughness (LER) of the EUV resist and Si3N4 pattern were investigated during etching of a Si3N4/EUV resist structure in dual-frequency superimposed CH2F2/N2/Ar capacitive coupled plasmas (DFS-CCP). The flow rates of CH2F2 and N2 gases played a critical role in determining the process window for ultra-high etch selectivity of Si3N4/EUV resist due to disproportionate changes in the degree of polymerization on the Si3N4 and EUV resist surfaces. Increasing the CH2F2 flow rate resulted in a smaller steady state CHxFy thickness on the Si3N4 and, in turn, enhanced the Si3N4 etch rate due to enhanced SiF4 formation, while a CHxFy layer was deposited on the EUV resist surface protecting the resist under certain N2 flow conditions. The LER values of the etched resist tended to increase at higher CH2F2 flow rates compared to the lower CH2F2 flow rates that resulted from the increased degree of polymerization.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.349-349
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• 2008

유비쿼터스 시대를 맞이하여 현재의 전자제품은 고주파 환경에서의 소형화된 마이크로파 소자를 요구하고 있다. 현재 구현되고 있는 마이크로파 소자의 형태는 여러 가지 전송선로 중에 하나로서 금속의 그라운드면 위에 유전체 막을 형성하고 그 위에 금속선을 정밀하게 패터닝하여 각 종 소자를 연결하는 microstrip line의 형태가 많이 사용된다. 이러한 microstrip line 형태의 소자를 설계할 시에 소자 자체의 구조나 유전체 막이 그 소자의 성능을 크게 좌우한다. 여기서 유전체 막은 신호선과 그라운드면 간의 전자파를 집중시켜주어 방사손실을 줄여주는 역할을 한다. 유전체 막의 두께는 소자의 전체적인 크기를 결정하는 요인이 된다. 이는 유전체 막의 두께가 감소할 경우 50 $\Omega$ 임피던스 매칭을 위해 막 위에 형성되는 소자들의 선폭도 동시에 줄여야 하므로 소자의 소형화도 가능 하여진다. 하지만 유전체 막의 두께가 감소할 경우 전자파가 유전체 막에 집중되지 못하여 방사손실이 커지게 되고 소자의 성능이 저하된다. 이런 점을 고려할 때 소자의 소형화를 만족시키면서 동시에 소자의 성능을 유지할 수 있는 유전체 막의 최적화 두께에 대한 연구가 필요하다. 볼 연구에서는 유전체 막의 최적화 두께를 제시하기 위해 대표적 마이크로파 소자인 Edge-Coupled Filter에 대하여 3-D Electromagnetic Simulator로 설계하고 유전체 막의 두께와 Filter 성능 간의 관계를 연구하였다. Filter의 성능은 유지하도록 하면서 유전체 막의 두께를 감소시켜 나간 결과, 약 30 ~ 40 ${\mu}m$ 의 최적화 두께를 얻을 수 있었다. 한편 30 ~ 40 ${\mu}m$ 두께의 후막 공정을 고려할 때 기존의 성막공정으로는 성막시간, 공정의 난이도, 공정온도 등의 면에서 난점이 존재하며 이러한 점들을 극복할 수 있는 Aerosol Deposition Method의 적용 가능성에 대해서 연구하였다.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.9 s.351
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• pp.64-68
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• 2006

Novel system-on-package (SOP) - D technology to improve the mechanical and thermal properties of a MCM-D substrate was suggested. Based on this investigation, the two types of band pass filters for the V-band application with unique structure were designed and implemented using 2-metals, 3-BCB layers. The first type using distributed resonator had the insertion loss below 2.6 dB at 55 GHz and group delay was below 0.06 ns. For the second type with edge coupled structure, the insertion loss and group delay were 3 dB and 0.1 ns, respectively. Suggested MCM-D substrate with band pass filter can be used to evaluate mm-Wave system including flip-chip bonded MMIC.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.44 no.7 s.361
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• pp.105-111
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• 2007

In this paper, we designed and fabricated a 3-dB tandem coupler using air-bridge technology for millimeter-wane monolithic integrated circuits, operating at W-band($75{\sim}110\;GHz$) frequency. Tightly edge-coupled CPW line has low directivity due to different even-mode and odd-mode phase velocity. To overcome this disadvantage, a 3-dB tandem coupler which comprises the two-sectional weakly parallel-coupled lines with equal phase velocity was designed at W-band. The proposed coupler was fabricated using air-bridge technology to monolithically materialize the uniplanar coupler structure instead of conventional multilayer or wire bonded structure. From the measurements, the coupling coefficient of $2.9{\sim}3.6\;dB$ and the good phase difference of $91.2{\pm}2.9^{\circ}$ were obtained in broad frequency range of $75{\sim}100\;GHz$.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.415-423
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• 1996

Thin film technologies for fabricating SQUIDs involve etching and deposition procedures with the proper substrate materials and $YBa_2Cu_3O_{7-d}$ (YBCO) as the high $T_c$ superconductor. YBCO were prepared on various substrates of MgO, $SrTiO_3$, and $LaAlO_3$ by using off-axis magnetron sputtering methods and annealing in-situ. The parameters of film fabrication processes had been optimized to yield good quality films in terms of the critical temperature $T_c$ and the critical current density $J_c$. The optimized processes yielded $T_C$>90K along with $J_c$>$10_6A$$extrm{cm}^2$ at 77K and>$2\times10_7A/Cm^2$ at 5K. We fabricated step-edge type dc-SQUIDs and directly coupled magnetometers, producing step edges on MgO(100) substrates by etching with Ar-ion beam, depositing YBCO material on them, then patterning them by using ion-milling technique. Circuitizing washer-shape SQUIDs to possess a pair of step-edge junctions of 2-5$\mu$ line width with a high angle>$50^{\circ}C$ , we examined their I-V characteristics thoroughly and Shapiro steps clearly as we irradiate microwaves of 8-20 GHz frequency.

• Transactions of the Korean Society of Mechanical Engineers
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• v.11 no.5
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• pp.755-761
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• 1987

Two-Dimensional incompressible laminar boundary layer with the reversed flow region is computed using the parially parabolized Navier-Stokes equations in primitive variables. The velocities and the pressure are explicity coupled in the difference equation and the resulting penta-diagonal matrix equations are solved by a streamwise marching technique. The test calculations for the trailing edge region of a finite flat plate and Howarth's linearly retarding flows demonstrate that the method is accurate, efficient and capable of predicting the reversed flow region.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.124-124
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• 2010

Currently, extreme ultraviolet lithography (EUVL) is being investigated for next generation lithography. EUVL is one of competitive lithographic technologies for sub-22nm fabrication of nano-scale Si devices that can possibly replace the conventional photolithography used to make today's microcircuits. Among the core EUVL technologies, mask fabrication is of considerable importance due to the use of new reflective optics having a completely different configuration compared to those of conventional photolithography. Therefore, new materials and new mask fabrication process are required for high performance EUVL mask fabrication. This study investigated the etching properties of SnO2 (Tin Oxide) as a new absorber material for EUVL binary mask. The EUVL mask structure used for etching is SnO2 (absorber layer) / Ru (capping / etch stop layer) / Mo-Si multilayer (reflective layer) / Si (substrate). Since the Ru etch stop layer should not be etched, infinitely high selectivity of SnO2 layer to Ru ESL is required. To obtain infinitely high etch selectivity and very low LER (line edge roughness) values, etch parameters of gas flow ratio, top electrode power, dc self - bias voltage (Vdc), and etch time were varied in inductively coupled Cl2/Ar plasmas. For certain process window, infinitely high etch selectivity of SnO2 to Ru ESL could be obtained by optimizing the process parameters. Etch characteristics were measured by on scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) analyses. Detailed mechanisms for ultra-high etch selectivity will be discussed.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.14 no.4
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• pp.401-412
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• 2003

In this paper, a broadband phase shifter structure using a new switched network was proposed. A new reference network is composed of coupled lines and 45$^{\circ}$open and short stubs, which are shunted at the edge points of a main line, respectively, A delay network is composed of only a standard transmission line. It is possible to design a broadband 180$^{\circ}$phase shifter that phase dispersive characteristics by an impedance ratio R of coupled lines and greater phase dispersive characteristics by characteristic impedances Zm, Zs of a main line and stubs are used together. By considering a structure symmetry, the even and odd mode analysis was performed to obtain theoretical S-parameters of the proposed phase shifter. Also, through computer simulation on the basis of derived equations, design graphs were presented to optimally design a 180$^{\circ}$broadband phase shifter. Design graphs provide the values of characteristic impedances Zm, Zs, and I/O match and phase bandwidths. To verify electrical performances of the broadband phase shifter proposed in this paper, low different 180$^{\circ}$phase shifters, operated at the center frequency 3 GHz were designed and fabricated using design graphs, and were experimented. One of them was designed as a standard Schiffman structure to compare with electrical performances. Measured results of each phase shifter to satisfy simultaneously design conditions of I/O match （VSWR=1.15:1) and maximum phase deviation $({\varepsilon}_{{\Delta}{\phi}}＝{\pm}2^{\circ})$ were well in agreement with corresponding simulation results over impedance match and phase error bandwidths, and showed broadband characteristics.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.247.1-247.1
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• 2014

The capacitive coupled plasma is used widely in the semiconductor industries. Especially, the uniformity of the industrial plasma is heavily related with defect ratio of devices. Therefore, the industries need the capacitive coupled plasma source which can generate the uniform plasma and control the plasma's uniformity. To achieving the uniformity of the large area plasma, we designed multi-powered electrodes. We controlled the uniformity by controlling the power of each electrode. After this work, we started to research another concept of the plasma device. We make the plasma chamber that has multi-ground electrodes imaginary (CST microwave studio) and simulate the electric field. The shape of the multi-ground electrodes is ring type, and it is same as the shape of the multi-power electrodes that we researched before. The diameter of the side electrode's edge is 300mm. We assumed that the plasma uniformity is related with the impedance of ground electrodes. Therefore we simulated the imaginary chamber in three cases. First, we connected L (inductor) and C (capacitor) at the center of multi-ground electrodes. Second, we changed electric conductivity of multi-ground electrode. Third, we changed the insulator's thickness between the center ground electrode and the side ground electrode. The driving frequency is 2, 13.56 and 100 MHz. We switched our multi-powered electrode system to multi-ground electrode system. After switching, we measured the plasma uniformity after installing a variable vacuum capacitor at the ground line. We investigate the effect of ground electrodes' impedance to plasma uniformity.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.285-285
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• 2011

EUVL (Extreme Ultra Violet Lithography) is one of competitive lithographic technologies for sub-30nm fabrication of nano-scale Si devices that can possibly replace the conventional photolithography used to make today's microcircuits. Among the core EUVL technologies, mask fabrication is of considerable importance since the use of new reflective optics having a completely different configuration compared to those of conventional photolithography. Therefore new materials and new mask fabrication process are required for high performance EUVL mask fabrication. This study investigated the etching properties of SnO2 (Tin Oxide) as a new absorber material for EUVL binary mask. The EUVL mask structure used for etching is SnO2 (absorber layer) / Ru (capping / etch stop layer) / Mo-Si multilayer (reflective layer) / Si (substrate). Since the Ru etch stop layer should not be etched, infinitely high selectivity of SnO2 layer to Ru ESL is required. To obtain infinitely high etch selectivity and very low LER (line edge roughness) values, etch parameters of gas flow ratio, top electrode power, dc self - bias voltage (Vdc), and etch time were varied in inductively coupled Cl2/Ar plasmas. For certain process window, infinitely high etch selectivity of SnO2 to Ru ESL could be obtained by optimizing the process parameters. Etch characteristics were measured by on scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) analyses. Detailed mechanisms for ultra-high etch selectivity will be discussed.