• 한국진공학회지
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• 제7권s1호
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• pp.44-49
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• 1998

The antimicrobial effects of HAp and Ag-HAp was observed using periprosthetic infection bacteria such as Pseudomonas Aeruginosa, Staphylococcus Epidermidis, Escherichia coli (DH5$\alpha$). Ag-HAp showed good antimicrobial effects. TEM study of E. coli with and without Ag treatment in HAp was experimented in order to find the mechanism of Ag in antimicrobial effects. It was observed that the shape of Ag-treated E. coli was changed, the cells walls became inhomogeneous. The vaculoes at cytoplasm formed into E. coli and finally it was discovered by EDAX that there were many dark granules which contain the Ag element inside the cells.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 추계학술대회 논문집
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• pp.561-565
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• 1999

We measured the optical properties in Ag/chalcogenide films with the exposure of 325nm-Held laser In addition we have investigated the Ag doping mechanism as considering the changes of Ag-concentration distribution and optical energy gap ( $E_{op}$ ) with Photon-dose. The "windows" characteristics of Ag thin film occur around the wavelength of 325 nm and the Ag is evaluated to be transparent, without an absorption, in the region. While the $E_{op}$ of S $b_2$ $S_3$ thin film was changed largely by an exposure of HeNe laser(632.8 nm) an exposure of HeCd laser resulted in relatively small variation of $E_{op}$ . Therefore it is thought that photon absorption at the metal layer plays an important role in Ag photodoping.on at the metal layer plays an important role in Ag photodoping.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.56-59
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• 2004

The stochiometric composition of $AgGaS_2$ polycrystal source materials for the $AgGaS_2/GaAs$ epilayer was prepared from horizontal furnace. From the extrapolation method of X-ray diffraction patterns it was found that the polycrystal $AgGaS_2$ has tetragonal structure of which lattice constant $a_0$ and $c_0$ were 5.756 ${\AA}$ and 10.305 ${\AA}$, respectively. $AgGaS_2/GaAs$ epilayer was deposited on throughly etched GaAs (100) substrate from mixed crystal $AgGaS_2$ by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $590^{\circ}C$ and $440^{\circ}C$ respectively. The crystallinity of the grown $AgGaS_2/GaAs$ epilayer was investigated by the DCRC (double crystal X-ray diffraction rocking curve). The optical energy gaps were found to be 2.61 eV for $AgGaS_2/GaAs$ epilayer at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation, then the constants in the Varshni equation are given by ${\alpha}=8.695{\times}10^{-4}eV/K$, and $\beta$=332 K. From the photocurrent spectra by illumination of polarized light of the $AgGaS_2/GaAs$ epilayer, we have found that crystal field splitting $\Delta$ Cr was 0.28 eV at 20 K. From the PL spectra at 20 K, the peaks corresponding to free and bound excitons and a broad emission band due to D-A pairs are identified. The binding energy of the free excitons are determined to be 0.2676 eV and 0.2430 eV and the dissociation energy of the bound excitons to be 0.4695 eV.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 제4회 영호남학술대회 논문집
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• pp.92-96
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• 2002

Hot wall epitaxy 방법을 이용하여 chalcopyrite 구조를 가진 고품질의 $AgInS_{2}$ 박막을 성장 하였다. 광전류 스펙트럼을 측정한 결과， 30K에서 300K까지는 단지 A 와 B 두개의 봉우리가 관측되었고 반면에 10K에서는 A,B,C 세 개의 봉우리가 관측되었다. 이때 이들 봉우리들은 band-to-band 전이에 기인하는 것으로 관측되었다. 광전류 측정으로부터 $AgInS_{2}$의 가전자대 갈라짐이 측정되었고 이로부터 10k에서 결정장에 의한 갈라짐 $D_{cr}$과 스핀궤도에 의한 갈라짐 $D_{so}$은 각각 0.150eV와 0.009eV로 관측되었다. 또한 에너지 밴드갭의 온도 의존성 $E_{g}(T)$에 대하여 연구하였고 성장된 $AgInS_{2}$ 박막의 에너지 밴드갭은 1.868eV 임을 알았다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.340.1-340.1
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• 2014

본 실험에서는 Ag두께 변화에 따른 투과율과 Energy bandgap의 변화를 알아보기 위해 RF Sputter장비와 Evaporator장비를 사용하여 IGZO, ZnO, AZO OMO 구조로 Low-e 코팅된 Glass를 제작하였다. $3cm{\times}3cm$의 Corning1737 유리기판에 RF Sputtering 방식으로 Oxide layer를 증착 하였고 Evaporator장비로는 Metal layer인 Ag막을 증착하였다. Oxide layer 증착 시 RF Sputter장비의 조건은 $3.0{\times}10^{-6}Torr$이하로 하였으며, 증착압력은 $6.0{\times}10^{-3}Torr$, 증착온도는 실온으로 고정하였다. Metal layer 증착 시 Evaporator장비의 조건은 $5.0{\times}10^{-6}Torr$이하, 전압은 0.3 V, Rotate 2 rpm으로 고정하였다. 실험 변수로는 Ag 두께를 5,7,9,11,13 nm로 변화를 주어 실험을 진행하였다. 투과도 측정 장비를 사용하여 각 샘플을 측정한 결과 IGZO의 경우 가시광영역의 평균 투과율이 80% 이상이며 Ag두께가 5nm일 때부터 자외선 영역의 빛을 차단하여 low-e 특성을 나타내었다. 이는 산화물인 IGZO가 결정질인 AZO, ZnO 보다 낮은 표면거칠기를 가지기 때문이다. Ag 두께에 따른 각 물질의 Optical energy bandgap 분석결과 Ag 두께가 증가할수록 IGZO는 4.65~4.5 eV, AZO는 4.6~4.4 eV, ZnO는 4.55~4.45 eV로 Energy bandgap은 감소하였다. AFM장비를 이용하여 각 샘플의 표면 Roughness 측정 결과 Ag 두께가 증가할수록 표면거칠기도 증가하는 경향을 나타내었다.

• E2M - 전기 전자와 첨단 소재
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• 제8권4호
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• pp.472-477
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• 1995

The degree of the photodoping process in Ag(100[.angs.])/a-Se$_{75}$Ge$_{25}$(1500[.angs.]) films has measured as a function of the photon energy between 1.5[eV] and 2.9[eV] with the exposing time. The "window" characteristics of Ag occur at 3400[.angs.] (3.65[eV]) and Ag is almost transparent in this region. It is shown that transmittance is almost constant (40-50%) for the wavelength ranges of our experiment. It is found that the energy gap of a unexposed a-Se$_{75}$Ge$_{25}$ film is 1.81[eV]. Ag photodoping process results in the photodarkening effect which the absorption edge shifts to the long wavelength. Especially, very large band shift (-0.3[eV]) is obtained by exposing He-Ne laser(6328[.angs.]).. We have obtained "the U-type property" for Ar He-Ne and semiconductor laser. It is associated with the variation of energy gap(E$_{g}$) with photo-dose and substantially is explained by DWP model.l.gap(E$_{g}$) with photo-dose and substantially is explained by DWP model.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.281-287
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• 2002

The stochiometric composition of AgGaS$_2$ polycrystal source materials for the AgGaS$_2$/GaAs epilayer was prepared from horizontal furnace. From the extrapolation method of X-ray diffraction patterns it was found that the polycrystal AgGaS$_2$ has tetragonal structure of which lattice constant a$\sub$0/ and c$\sub$0/ were 5.756 ${\AA}$ and 10.305 ${\AA}$, respectively. AgGaS$_2$/GaAs epilayer was deposited on throughly etched GaAs(100) substrate from mixed crystal AgGaS$_2$ by the Hot Wall Epitaxy (100) system. The source and substrate temperature were 590$^{\circ}C$ and 440$^{\circ}C$ respectively. The crystallinity of the grown AgGaS$_2$/GaAs epilayer was investigated by the DCRC (double crystal X-ray diffraction rocking curve). The optical energy gaps were found to be 2.61 eV for AgGaS$_2$/GaAs epilayer at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation, then the constants in the Varshni equation are given by ${\alpha}$ : 8.695${\times}$10$\^$-4/ eV/K, and ${\beta}$ = 332 K. From the photocurrent spectra by illumination of polarized light of the AgGaS$_2$/GaAs epilayer, we have found that crystal field splitting ΔCr was 0.28 eV at 20 K. From the PL spectra at 20 K, the peaks corresponding to free and bound excitons and a broad emission band due to D-A pain are identified. The binding energy of the free excitons are determined to be 0.2676 eV and 0.2430 eV and the dissociation energy of the bound excitons to be 0.4695 eV.

• 미생물학회지
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• 제29권2호
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• pp.80-84
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• 1991

We cloned and expressed hepatitis B viral core antigen (HBcAg) gene in E. coli using $P_{L}$ promoter system. For optimal expression of the gene, we undertook the studies on the effects of the distance between Shine-Dalgarno (SD) sequence and start codon, copy number of repressor gene, induction temperature, and the stability of the core antigen. The results demonstrated that the induction at 37.deg.C was more efficient than at 42.deg.C, and the 11 base pairs (bp) distance between SD sequence and start codon of HBcAg gene was more efficient than the 15 bp distance in E. coli. The copy number of cI857 repressor gene did not influence on the expression of HBcAg, and the expression level of HBcAg in mutant type (low protease activity) and wild type strains was almost the same. The produced core antigen appeared to be HBcAg not HBeAg judged by two different radioimmunoassat (RIA) kits. This result suggested that the antigen was stable in E. coli.i.

• Journal of Microbiology and Biotechnology
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• 제30권4호
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• pp.540-551
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• 2020

Sporotrichosis is a chronic and subacute mycosis causing epidemiological outbreaks involving sick cats and humans in southeastern Brazil. The systemic disease prevails in cats and in humans, with the symptoms restricted to the skin of immunocompetent individuals. Under these conditions, the prolonged treatment of animals and cases of recurrence justify the discovery of new treatments for sporotrichosis. This work addresses the antifungal activity of silver salts of Keggin-type heteropolyacid salts (Ag-HPA salts) such as Ag₃[PW₁₂O₄₀], Ag₆[SiW₁₀V₂O₄₀], Ag₄[SiW₁₂O₄₀] and Ag₃[PMo₁₂O₄₀] and interactions with the antifungal drugs itraconazole (ITC), terbinafine (TBF) and amphotericin B (AMB) on the yeast and mycelia forms of Sporothrix spp. Sporothrix spp. yeast cells were susceptible to Ag-HPA salts at minimum inhibitory concentration (MIC) values ranging from 8 to 128 ㎍/ml. Interactions between Ag₃[PW₁₂O₄₀] and Ag₃[PMo₁₂O₄₀] with itraconazole and amphotericin B resulted in higher antifungal activity with a reduction in growth and melanization. Treated cells showed changes in cell membrane integrity, vacuolization, cytoplasm disorder, and membrane detachment. Promising antifungal activity for treating sporotrichosis was observed for the Ag-HPA salts Ag₃[PMo₁₂O₄₀] and Ag₃[PW₁₂O₄₀], which have a low cost, high yield and activity at low concentrations. However, further evaluation of in vivo tests is still required.

• 마이크로전자및패키징학회지
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• 제11권4호
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• pp.43-48
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• 2004

상부 칩과 하부 기판이 모두 Si으로 구성되어 있는 플립칩 패키지 시편을 제조하여 $130{\~}160^{\circ}C$의 온도 범위에서 $3{\~}4{\times}10^4 A/cm^2$의 전류밀도를 가하여 주면서 플립칩 본딩된 Sn-3.5Ag-0.5Cu 솔더범프의 electromigration 거동을 분석하였다. Sn-3.5Ag-0.5Cu 솔더범프의 cathode로부터 anode로의 electromigration에 의해 Cu UBM이 완전히 소모되어 cathode부위에서 void가 형성됨으로써 파괴가 발생하였다. Sn-3.5Ag-0.5Cu 솔더범프의 electromigration에 대한 활성화 에너지는 $3{\times}10^4 A/cm^2$의 전류밀도에서는 0.61 eV, $3.5{\times}10^4 A/cm^2$의 전류밀도에서는 0.63 eV, $4{\times}10^4 A/cm^2$의 전류밀도에서는 0.77 eV로 측정되었다.