• 제목/요약/키워드: e-AG

검색결과 644건 처리시간 0.024초

Adsorption and Photocatalytic Performances of BiOI Nanostructures for Methyl Orange and Rhodamine B: Ag and Ti-Loading Effects

  • Park, Yohan;Sohn, Youngku
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.592-592
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    • 2013
  • We synthesized BiOI nanostructures with various doped-concentrations of Ag (0.1, 1.0, 5.0, 10.0 mol%) and Ti (1.0, 5.0, 10.0, 30.0, 50.0 mol%). They show spherical echinoid-like structures examined by scanning electron microscope. The BET surface areas were measured to be in the range of 40~70 $m^2$/g, which is reduced by doping. The indirect band gap was estimated to be 1.8 eV for undoped BiOI with no change and 1.0 eV increase upon Ag and Ti doping, respectively. The structures were further examined by X-Ray diffraction analysis, FT-IR, and photoluminescence. We also demonstrated adsorption and photocatalytic degradation performances for methyl orange and Rhodamine B on the echinoid-like BiOI structures.

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2원화합물 Ag2Te 단결정의 Hall 효과 특성 (The Hall Effect in Binary Compound Silver Telluride Single Crystal)

  • 최창주;강원찬;민완기;김남오
    • 전기학회논문지P
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    • 제53권4호
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    • pp.171-174
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    • 2004
  • The $Ag_2Te$ crystal was grown by the Bridgman method. The $Ag_2Te$ crystal was an monoclinic structure with lattice constance a = $8.1686{\AA}$, b = $9.0425{\AA}$, c = $8.0065{\AA}$. Hall effect shows a n-type conductivity in the $Ag_2Te$ crystal. The electrical resistivity was 1.080e-$3{\Omega}cm$ and electron mobility was $-5.48{\times}10^3cm^2/V{\cdot}sec$ at room temperature(RT).

Electrical Properties of Mg:Ag/tris-(8-hydroxyquinoline) Aluminum Heterointerface in Organic Light-emitting Devices

  • Choo, D.C.;Im, H.C.;Lee, D.U.;Kim, T.W.;Han, J.H.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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    • pp.1429-1431
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    • 2005
  • Organic molecular-beam deposition of Mg:Ag thin films with a low Mg concentration on tris (8-hydroxyquinolino) aluminum $(Alq_3)$ layers at room temperature was performed to investigate the feasibility of using Mg:Ag thin films as cathode electrodes in organic light-emitting devices (OLEDs). The effective barrier height of the $Mg:Ag/Alq_3$ heterointerface, determined from current-voltage measurements, was as low as 0.23 eV. These results help improve understanding the electrical properties of the $Mg:Ag/Alq_3$ heterointerfaces in OLEDs.

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2원화화물 $Ag_2Te$ 단결정의 Hall 효과 특성 (The Hall Effect in Binary Compound Silver telluride Single Crystal)

  • 김남오;김형곤;장성남;이광석;방태환;현승철
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2004년도 학술대회 논문집 전문대학교육위원
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    • pp.134-136
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    • 2004
  • The results of investigations of $Ag_2Te$ crystal is presented. $Ag_2Te$ crystal was grown by the Bridgman method. The $Ag_2Te$ crystal was an monoclinic structure with lattice constance a = 8.1686 A, b = 9.0425 ${{\AA}}$, c = 8.0065 ${{\AA}}$. Hall effect shows a n-type conductivity in the $Ag_2Te$ crystal. The electrical resistivity values was $1.080e^{-3}{\Omega}cm$ and electron mobility was $-5.48{\times}10^3cm^2/V{\cdot}sec$ at room temperature(RT).

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AsGeSeS 박막의 광학적 조건에 따른 저항변화 특성에 대한 연구

  • 남기현;정홍배
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.248-248
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    • 2010
  • We have demonstrated new functionalities of Ag-doped chalcogenide glasses based on their capabilities as solid electrolytes. The influence of silver on the properties of the newly formed materials is regarded in terms of diffusion kinetics, and Ag saturation is related to the composition of the hosting material. Silver saturated in chalcogenide glass has been used in the formation of solid electrolyte, which is the active medium in the programmable metallization cell (PMC) device. In this paper, we investigated the optical properties of Ag-doped chalcogenide thin film by He-Ne laser beam exposure, which is concerned with the Ag-doping effect of PMCs before or after annealing. Chalcogenide bulk glass was fabricated by a conventional melt quenching technique. Amorphous chalcogenide and Ag thin films were prepared by e-beam evaporation at a deposition rate of about $4\;{\AA}/sec$. As a result of resistance change with laser beam exposure, the resistance abruptly dropped from the initial value of $1.4\;M{\Omega}$ to the saturated value of $400\;{\Omega}$.

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P(인)의 첨가에 따른 Sn-Ag-Cu계 및 Sn-Cu계 솔더의 특성에 관한 연구 (A Study on Characterization of Sn-Ag-Cu and Sn-Cu Lead-free Solders by Adding of P)

  • 김경대;김택관;황성진;신영의;김종민
    • 한국마이크로전자및패키징학회:학술대회논문집
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    • 한국마이크로전자및패키징학회 2002년도 춘계 기술심포지움 논문집
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    • pp.104-108
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    • 2002
  • This paper was investigated the lead free solder characteristics by P mass percentage chang e. Tension test, wetting balance test, spread test, and analysis of intermetallic compound after isothermal aging of Sn-2.5Ag-0.7Cu-0.005P, Sn-2.5Ag-0.7Cu-0.01P, Sn-2.5Ag-0.7Cu-0.02P, Sn-0.7Cu-0.005P were performed for estimation. By adding P on the solder alloys, it was showe d improvement of tensile strength, reduction of intermetallic compound growth and reduction of oxidization of fusible solder under wave soldering processes. After comparing solder alloy containing P with tin lead eutectic solder alloy, p containing solder alloys showed much better solderability than eutectic solder alloys.

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$Fe_{87}Zr_{7}B_{5}Ag_{1}$(at%) 비정질 합금의 연자기 특성 (The Soft Magnetic Properties of $Fe_{87}Zr_{7}B_{5}Ag_{1}$ Amorphous Alloy)

  • 김현식;오영우;김병걸;정순종;김기욱
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1994년도 춘계학술대회 논문집
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    • pp.120-122
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    • 1994
  • We examined the magnetic properties as a function of annealing temperature of the as-quenched $Fe_{87}Zr_{7}B_{5}Ag_{1}$ amorphous alloy. The values of $H_{c}$=30m0e, $B_{a}$=0.44T and ${\mu}$i=146000 at $300^{\circ}C$ annealing treatment are obtained. The excel lent soft magnetic properties seem to result from the annihilation of quenching-Induced internal stress by the heat treatment and the change of microstructure due to the different relaxation behavior owing to adding insoluble element such as Ag. Therefore, the $Fe_{87}Zr_{7}B_{5}Ag_{1}$ amorphous alloy is quite promising for practical use as a core material in various transformers of high transformers of high frequency.

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Ag(100) 기판위에 증착된 Nb Cluster에 관한 STM연구

  • 윤홍식;유미애;한권환;이준희;양경득;여인환
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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    • pp.140-140
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    • 2000
  • The initial growth mode of Nb on Ag(11) in sub-monolayer regime and the influence of subsequent 520K annealing are studied using UHV Scanning Tunneling Microscopy. E-beam evaporated Nb is deposited onto the substrate at RT, and STM measurements are carried out at RT and 78 K. With Nb being immiscible in bulk Ag, 3D islands formation begins at early stage and no particular ordered structure is found. After annealing to 520K, most of islands are disappeared from terrace. There exist 2 possibilities. : (1) Diffusion of Nb into the 2nd or 3rd layer of Ag substrate or (2) agglomeration of Nb on Ag at higher temperature. A model will be given to explain the evidence. In addition, we investigated the change of STM image according to bias voltage depending on island size. Possible physical mechanism responsible for such behavior together with interaction between Nb islands and reactive gases will be also discussed.

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