• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.592-592
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• 2013

We synthesized BiOI nanostructures with various doped-concentrations of Ag (0.1, 1.0, 5.0, 10.0 mol%) and Ti (1.0, 5.0, 10.0, 30.0, 50.0 mol%). They show spherical echinoid-like structures examined by scanning electron microscope. The BET surface areas were measured to be in the range of 40~70 $m^2$/g, which is reduced by doping. The indirect band gap was estimated to be 1.8 eV for undoped BiOI with no change and 1.0 eV increase upon Ag and Ti doping, respectively. The structures were further examined by X-Ray diffraction analysis, FT-IR, and photoluminescence. We also demonstrated adsorption and photocatalytic degradation performances for methyl orange and Rhodamine B on the echinoid-like BiOI structures.

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.61.1-61.1
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• 2007

• 한국약용작물학회:학술대회논문집
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• 2009.05a
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• pp.239-240
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• 2009

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.53 no.4
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• pp.171-174
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• 2004

The $Ag_2Te$ crystal was grown by the Bridgman method. The $Ag_2Te$ crystal was an monoclinic structure with lattice constance a = $8.1686{\AA}$, b = $9.0425{\AA}$, c = $8.0065{\AA}$. Hall effect shows a n-type conductivity in the $Ag_2Te$ crystal. The electrical resistivity was 1.080e-$3{\Omega}cm$ and electron mobility was $-5.48{\times}10^3cm^2/V{\cdot}sec$ at room temperature(RT).

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1429-1431
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• 2005

Organic molecular-beam deposition of Mg:Ag thin films with a low Mg concentration on tris (8-hydroxyquinolino) aluminum $(Alq_3)$ layers at room temperature was performed to investigate the feasibility of using Mg:Ag thin films as cathode electrodes in organic light-emitting devices (OLEDs). The effective barrier height of the $Mg:Ag/Alq_3$ heterointerface, determined from current-voltage measurements, was as low as 0.23 eV. These results help improve understanding the electrical properties of the $Mg:Ag/Alq_3$ heterointerfaces in OLEDs.

• Proceedings of the KIEE Conference
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• 2004.07e
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• pp.134-136
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• 2004

The results of investigations of $Ag_2Te$ crystal is presented. $Ag_2Te$ crystal was grown by the Bridgman method. The $Ag_2Te$ crystal was an monoclinic structure with lattice constance a = 8.1686 A, b = 9.0425 ${{\AA}}$, c = 8.0065 ${{\AA}}$. Hall effect shows a n-type conductivity in the $Ag_2Te$ crystal. The electrical resistivity values was $1.080e^{-3}{\Omega}cm$ and electron mobility was $-5.48{\times}10^3cm^2/V{\cdot}sec$ at room temperature(RT).

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.248-248
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• 2010

We have demonstrated new functionalities of Ag-doped chalcogenide glasses based on their capabilities as solid electrolytes. The influence of silver on the properties of the newly formed materials is regarded in terms of diffusion kinetics, and Ag saturation is related to the composition of the hosting material. Silver saturated in chalcogenide glass has been used in the formation of solid electrolyte, which is the active medium in the programmable metallization cell (PMC) device. In this paper, we investigated the optical properties of Ag-doped chalcogenide thin film by He-Ne laser beam exposure, which is concerned with the Ag-doping effect of PMCs before or after annealing. Chalcogenide bulk glass was fabricated by a conventional melt quenching technique. Amorphous chalcogenide and Ag thin films were prepared by e-beam evaporation at a deposition rate of about $4\;{\AA}/sec$. As a result of resistance change with laser beam exposure, the resistance abruptly dropped from the initial value of $1.4\;M{\Omega}$ to the saturated value of $400\;{\Omega}$.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.05a
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• pp.104-108
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• 2002

This paper was investigated the lead free solder characteristics by P mass percentage chang e. Tension test, wetting balance test, spread test, and analysis of intermetallic compound after isothermal aging of Sn-2.5Ag-0.7Cu-0.005P, Sn-2.5Ag-0.7Cu-0.01P, Sn-2.5Ag-0.7Cu-0.02P, Sn-0.7Cu-0.005P were performed for estimation. By adding P on the solder alloys, it was showe d improvement of tensile strength, reduction of intermetallic compound growth and reduction of oxidization of fusible solder under wave soldering processes. After comparing solder alloy containing P with tin lead eutectic solder alloy, p containing solder alloys showed much better solderability than eutectic solder alloys.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.05a
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• pp.120-122
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• 1994

We examined the magnetic properties as a function of annealing temperature of the as-quenched $Fe_{87}Zr_{7}B_{5}Ag_{1}$ amorphous alloy. The values of $H_{c}$=30m0e, $B_{a}$=0.44T and ${\mu}$i=146000 at $300^{\circ}C$ annealing treatment are obtained. The excel lent soft magnetic properties seem to result from the annihilation of quenching-Induced internal stress by the heat treatment and the change of microstructure due to the different relaxation behavior owing to adding insoluble element such as Ag. Therefore, the $Fe_{87}Zr_{7}B_{5}Ag_{1}$ amorphous alloy is quite promising for practical use as a core material in various transformers of high transformers of high frequency.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.140-140
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• 2000

The initial growth mode of Nb on Ag(11) in sub-monolayer regime and the influence of subsequent 520K annealing are studied using UHV Scanning Tunneling Microscopy. E-beam evaporated Nb is deposited onto the substrate at RT, and STM measurements are carried out at RT and 78 K. With Nb being immiscible in bulk Ag, 3D islands formation begins at early stage and no particular ordered structure is found. After annealing to 520K, most of islands are disappeared from terrace. There exist 2 possibilities. : (1) Diffusion of Nb into the 2nd or 3rd layer of Ag substrate or (2) agglomeration of Nb on Ag at higher temperature. A model will be given to explain the evidence. In addition, we investigated the change of STM image according to bias voltage depending on island size. Possible physical mechanism responsible for such behavior together with interaction between Nb islands and reactive gases will be also discussed.