• 제목/요약/키워드: dynamic scanning

검색결과 356건 처리시간 0.035초

HSLA-100강 및 HY-100강의 응력제거처리 균열에 관한 연구 (A Study on the Stress Relief Cracking of HSLA-100 and HY-100 steels)

  • 박태원;심인옥;김영우;강정윤
    • Journal of Welding and Joining
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    • 제14권3호
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    • pp.48-57
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    • 1996
  • A study was made to examine the characteristics of base metal and stress relief cracking(SRC) of heat affected zone(HAZ) for HY-100 and Cu-bearing HSLA-100 steels. The Gleeble thermal/mechanical simulator was used to simulate the SRC/HAZ. The details of mechanical properties of base plate and SRC tested specimens were studied by impact test, optical microscopy and scanning electron microscopy. The specimens were aged at $650^{\circ}C$ for HSLA-100 steel and at $660^{\circ}C$ for HY-100 steel and thermal cycled from $1350^{\circ}C$ to $25^{\circ}C$ with a cooling time of $\Delta$t_${800^{circ}C/500^{circ}C}$=21sec. corresponds to the heat input of 30kJ/cm. The thermal cycled specimens were stressed to a predetermined level of 248~600MPa and then reheated to the stress relief temperatures of $570~620^{\circ}C$. The time to failure$(t_f)$ at a given stress level was used as a measure of SRC susceptibility. The strength, elongation and impact toughness of base plate were greater in HSLA-100 steel than in HY-100 steel. The time to failure was decreased with increasing temperature and/or stress. HSLA-100 steel was more susceptible to stress relief cracking than HY-100 steel under same conditions. It is thought to be resulted from the precipitation of $\varepsilon$-Cu phase by dynamic self diffusion of solute atoms. By the precipitation of $\varepsilon$-Cu phase, the differential strengthening of grain interior relative to grain boundary may be greater in the Cu-bearing HSLA-100 steel than in HY-100 steel. Therefore, greater strain concentration at grain boundary of HSLA-100 steel results in the increased SRC susceptibility. The activation energies for SRC of HSLA-100 steel are 103.9kcal/mal for 387MPa and 87.6kcal/mol for 437MPa and that of HY-100 steel is 129.2kcal/mol for 437MPa.

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$CO_2$ Laser에 의한 Polyamide-6 소결과 그 영향에 관한 연구 (A Study on Polyamide-6 Sintering and Effect by $CO_2$ Laser)

  • 배성우;김동수;안영진;김형일;최기섭
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2006년도 춘계학술대회 논문집
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    • pp.197-198
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    • 2006
  • In the solid freeform fabrication (SFF) system using selective laser sintering (SLS), polyamide-12 powder is currently recognized as general material. In this study, some kinds of polyamide-6 powders with different shape and particlesize were fabricated to investigate the formability, the microstructure and mechanical properties. Also, to develop a more elaborate and rapid system, this study employs a new SLS device with a 3-axis dynamic focusing scanner system instead of the existing fe lens used in commercial SLS. Polyamide-6 powders having the average size of 100 m were treated thermally in order to keep the spherical symmetry in shape. These polyamide-6 powders were mixed with polyamide-12 powders having the average size of 50 m to give the bimodal distribution of size. These mixed powders showed the better fabrication in the selective laser sintering process because the smaller particles of polyamide-11 played an important role in the compact packing of powders by filling the void space between the large particles of polyamide-6. Also, Experiments have performed to evaluate the effect of a scanning path and sintering parameters by fabricating the various 3D objects.

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Inductively Coupled Plasma Reactive Ion Etching of MgO Thin Films Using a $CH_4$/Ar Plasma

  • Lee, Hwa-Won;Kim, Eun-Ho;Lee, Tae-Young;Chung, Chee-Won
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.77-77
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    • 2011
  • These days, a growing demand for memory device is filled up with the flash memory and the dynamic random access memory (DRAM). Although DRAM is a reasonable solution for current demand, the universal novel memory with high density, high speed and nonvolatility, needs to be developed. Among various new memories, the magnetic random access memory (MRAM) device is considered as one of good candidate memories because of excellent features including high density, high speed, low operating power and nonvolatility. The etching of MTJ stack which is composed of magnetic materials and insulator such as MgO is one of the vital process for MRAM. Recently, MgO has attracted great interest in the MTJ stack as tunneling barrier layer for its high tunneling magnetoresistance values. For the successful realization of high density MRAM, the etching process of MgO thin films should be investigated. Until now, there were some works devoted to the investigations on etch characteristics of MgO thin films. Initially, ion milling was applied to the etching of MgO thin films. However, ion milling has many disadvantages such as sidewall redeposition and etching damage. High density plasma etching containing the magnetically enhanced reactive ion etching and high density reactive ion etching have been employed for the improvement of etching process. In this work, inductively coupled plasma reactive ion etching (ICPRIE) system was adopted for the improvement of etching process using MgO thin films and etching gas mixes of $CH_4$/Ar and $CH_4$/$O_2$/Ar have been employed. The etch rates are measured by a surface profilometer and etch profiles are observed using field emission scanning emission microscopy (FESEM). The effects of gas concentration and etch parameters such as coil rf power, dc-bias voltage to substrate, and gas pressure on etch characteristics will be systematically explored.

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Effects of Etch Parameters on Etching of CoFeB Thin Films in $CH_4/O_2/Ar$ Mix

  • Lee, Tea-Young;Lee, Il-Hoon;Chung, Chee-Won
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.390-390
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    • 2012
  • Information technology industries has grown rapidly and demanded alternative memories for the next generation. The most popular random access memory, dynamic random-access memory (DRAM), has many advantages as a memory, but it could not meet the demands from the current of developed industries. One of highlighted alternative memories is magnetic random-access memory (MRAM). It has many advantages like low power consumption, huge storage, high operating speed, and non-volatile properties. MRAM consists of magnetic-tunnel-junction (MTJ) stack which is a key part of it and has various magnetic thin films like CoFeB, FePt, IrMn, and so on. Each magnetic thin film is difficult to be etched without any damages and react with chemical species in plasma. For improving the etching process, a high density plasma etching process was employed. Moreover, the previous etching gases were highly corrosive and dangerous. Therefore, the safety etching gases are needed to be developed. In this research, the etch characteristics of CoFeB magnetic thin films were studied by using an inductively coupled plasma reactive ion etching in $CH_4/O_2/Ar$ gas mixes. TiN thin films were used as a hardmask on CoFeB thin films. The concentrations of $O_2$ in $CH_4/O_2/Ar$ gas mix were varied, and then, the rf coil power, gas pressure, and dc-bias voltage. The etch rates and the selectivity were obtained by a surface profiler and the etch profiles were observed by a field emission scanning electron microscopy. X-ray photoelectron spectroscopy was employed to reveal the etch mechanism.

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PLA/PBAT 블렌드의 개질과 열적, 기계적 특성 (Modification of PLA/PBAT Blends and Thermal/Mechanical Properties)

  • 김대진;민철희;박해윤;김상구;서관호
    • 공업화학
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    • 제24권1호
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    • pp.104-111
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    • 2013
  • 본 연구에서는 생분해성 지방족 폴리에스터 중 비교적 고가인 poly(butylene adipate-co-terephthalate) (PBAT)와 상대적으로 저가의 생분해성 고분자인 polylactic acid (PLA)의 블렌드에 3종류의 개질제를 사용하여 그 효과를 조사하였다. 개질제로는 에폭시계의 커플링제와 diisocyanate계열의 methylenediphenyl 4,4'-diisocyanate (MDI)와 hexamethylene diisocyanate (HDI)를 사용하였다. 여러 가지 조성의 블렌드에 용융흐름지수, 동적 점탄성을 조사하였다. 또한, 인장시험을 통한 기계적 물성 조사와 FE-SEM으로 시편의 파단표면을 관찰하였다. 이를 통해 PLA/PBAT 블렌드의 상용성과 개질제의 효과 및 기계적물성에 미치는 영향을 고찰하였다. 개질제로 HDI를 사용했을 때 PLA/PBAT의 인장물성이 크게 증가하였다.

양극산화 공정시간에 따른 알루미늄 5052 합금의 산화피막 성장 및 내식성 관찰 (Observation of Corrosion Behavior with Aluminum 5052 Alloy by Modulating Anodization Time)

  • Ji, HyeJeong;Choi, Dongjin;Jeong, Chanyoung
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2018년도 춘계학술대회 논문집
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    • pp.67-67
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    • 2018
  • The 5xxx series aluminum alloys are recently used in not only marine system but also automotive area because of a low density material, good mechanical properties and better resistance to corrosion. However, Aluminum alloys are less resistant than the purest aluminum such as 1xxx aluminum alloy. Electrochemical anodization technique has attracted in the area of surface treatment because of a simple procedure, a low-cost efficiency than other techniques such as lithography and a large volume of productivity, and so on. Here, The relationship between the corrosion behavior and the thickness of aluminum anodic oxide have been studied. Prior to anodization, The 5052 aluminum sheets ($30{\times}20{\times}1mm$) were degreased by ultra-sonication in acetone and ethanol for 10 minutes and eletropolished in a mixture of perchloric acid and ethanol (1:4, volume ratio) under an applied potential of 20V for 60 seconds to obtain a regular surface. During anodization process, Aluminum alloy was used as a working electrode and a platinum was used as a counter electrode. The two electrodes were separated at a distance of 5cm. The applied voltage of anodization is conducted at 40V in a 0.3M oxalic acid solution at $0^{\circ}C$ with appropriate magnetic stirring. The surface morphology and the thickness of AAO films was observed with a Scanning Electron Microscopy (SEM). The corrosion behavior of all samples was evaluated by an open-circuit potential and potentio-dynamic polarization test in 3.5wt% NaCl solution. Thus, The corrosion resistance of 5052 aluminum alloy is improved by the formation of an anodized oxide film as function of increase anodization time which artificially develops on the metal surface. The detailed electrochemical behavior of aluminum 5052 alloy will be discussed in view of the surface structures modified by anodization conditions such as applied voltages, concentration of electrolyte, and temperature of electrolyte.

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The photocatalytic activities of nano-titanium dioxide on the cotton fabrics for self-cleaning properties

  • Metanawin, Siripan;Metanawin, Tanapak;Panutumrong, Praripatsaya;Hathaiwaseewong, Sunee;Chaichalermvong, Tirapong
    • International Journal of Advanced Culture Technology
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    • 제3권1호
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    • pp.129-137
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    • 2015
  • The study of photocatalysis of nano titanium dioxideon the cotton fabrics have been investigatedthrough self-cleaning properties. The mini-emulsion technique was employed to prepare the encapsulation of titanium dioxide nano particles in polystyrene beads prior used. The mini-emulsion was coated on the cotton fabrics using Pad-dry method.The loading amount of TiO2particles into the mini-emulsion were various from 1%wt to 40%wt. The particles sizes of the TiO2-encapsulated polystyrene mini-emulsion were investigated by dynamic light scattering. It was noticed that the particle size of the mini-emulsion was in the range of 100- 200 nm. The morphology of treated cotton fabrics were investigated using scanning electron microscopy. The crystal structure of TiO2-encapsulated PS mini emulsion which coated on cotton fabrics were examined by X-ray diffraction spectroscopy. In order to investigate the photocatalytic activities of TiO2 through the selfcleaning characteristics of the cotton fabrics, colorant stains were created on the samples. Coffee stains were used as colorant organic stains. The result shown that the coffee stained on the cotton fabrics significantly showed the improving of the self-cleaning properties under UV radiation.

폴리(에틸렌 글리콜)기를 갖는 폴리스티렌 입자의 제조와 유전 매질내에서의 표면 전하 특성 (Preparation of Polystyrene Particles Containing Poly(ethylene glycol) Groups and Their Surface Charge Characterization in Dielectric Medium)

  • 김성훈;김배중;권대익;박기홍
    • 폴리머
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    • 제28권6호
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    • pp.524-530
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    • 2004
  • 스티렌, 폴리(에틸렌 글리콜) 메타크릴레이트 (PEG-MMA) 혹은 폴리(에틸렌 글리콜) 디메타크릴레이트 (PEG-diMMA)를 중성 매질에서 무유화제 (emulsifier-free) 유화 중합하여 표면에 에틸렌 글리콜기를 갖는 폴리스티렌 입자를 합성하였고, 이로부터 동결 건조되어진 분말을 제조하였다. 고분자 분말은 FT-TR 분광기로 구조를 확인하였고, 광산란 입도 분석기와 주사 전자 현미경 (SEM)을 이용하여 입자 크기와 분산도를 조사하였다. 스티렌에 대하여 공단량체 PEG-MMA는 2∼5 mol%, PEG-diMMA는 1 mol% 농도 부근에서 균일한 입자 크기를 얻을 수 있었다. 합성된 입자의 표면 전하를 유전 매질 내에서 ELS-8000 광산란법을 이용하여 제타 포텐셜을 측정하였다. 스티렌에 대하여 PEG-MMA 5 mol%에서 183 mV의 아주 높은 제타 포텐셜이 측정되었다.

Diglycidylether of Bisphenol-S 에폭시 수지의 합성 및 경화거동에 관한 연구 (Synthesis and Cure Behaviors of Diglycidylether of Bisphenol-S Epoxy Resins)

  • 박수진;김범용;이재락;신재섭
    • 폴리머
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    • 제26권4호
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    • pp.501-507
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    • 2002
  • 본 논문에서는 bisphenol-S (BPS)와 epichlorohydrin (ECH)를 NaOH의 촉매하에서 중합시켜 diglycidylether of bisphenol-S (DGEBS) 에폭시 수지를 합성하였다. IR, NMR spectra 분석, 그리고 원소분석에 의해 합성한 DGEBS 에폭시 수지의 화학구조를 확인하였다 산무수화물계 phthalic anhydride (PA)와 tetrahydrophthalic anhydride (THPA)를 경화제로 사용하여 DSC에 의한 열분석을 통하여 DGEBS 에폭시 수지의 경화 동력학과 유리전이온도 ($T_g$)를 고찰하였으며, TGA 열분석을 사용하여 경화된 시편의 열안정성을 측정하였다. 실험 결과 DGEBS/PA계의 경화 활성화 에너지 ($E_a$)는 DGEBS/THPA계보다 높았지만 ($T_g$), 열분해 개시온도 (IDT), 그리고 분해 활성화 에너지 ($E_t$)는 DGEBS/THPA계보다 낮았다. 이는 경화제의 ring strain에 의하여 DGEBS/THPA계의 가교 밀도가 증가하였기 때문인 것으로 사료된다.

Thermo-Sensitive Polyurethane Membrane with Controllable Water Vapor Permeation for Food Packaging

  • Zhou, Hu;Shit, Huanhuan;Fan, Haojun;Zhou, Jian;Yuan, Jixin
    • Macromolecular Research
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    • 제17권7호
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    • pp.528-532
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    • 2009
  • The size and shape of free volume (FV) holes available in membrane materials control the rate of gas diffusion and its permeability. Based on this principle, a segmented, thermo-sensitive polyurethane (TSPU) membrane with functional gate, i.e., the ability to sense and respond to external thermo-stimuli, was synthesized. This smart membrane exhibited close-open characteristics to the size of the FV hole and water vapor permeation and thus can be used as smart food packaging materials. Differential scanning calorimetry (DSC), dynamic mechanical analysis (DMA), positron annihilation lifetimes (PAL) and water vapor permeability (WVP) were used to evaluate how the morphological structure of TSPU and the temperature influence the FV holes size. In DSC and DMA studies, TSPU with a crystalline transition reversible phase showed an obvious phase-separated structure and a phase transition temperature at $53^{\circ}C$ (defined as the switch temperature and used as a functional gate). Moreover, the switch temperature ($T_s$) and the thermal-sensitivity of TSPU remained available after two or three thermal cyclic processes. The PAL study indicated that the FV hole size of TSPU is closely related to the $T_s$. When the temperature varied cyclically from $T_s-10{\circ}C$ to $T_s+10^{\circ}C$, the average radius (R) of the FV holes of the TSPU membrane also shifted cyclically from 0.23 to 0.467 nm, exhibiting an "open-close" feature. As a result, the WVP of the TSPU membrane also shifted cyclically from 4.30 to $8.58\;kg/m^2{\cdot}d$, which produced an "increase-decrease" response to the thermo-stimuli. This phase transition accompanying significant changes in the FV hole size and WVP can be used to develop "smart materials" with functional gates and controllable water vapor permeation, which support the possible applications of TSPU for food packaging.