• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2008년도 춘계학술대회
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• pp.23-29
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• 2008

- High Density Plasma Source-CCP-Dual/Triple, RF Frequency Control - Radical/Flux Analysis - Low Pressure Process - Chamber Design (Process gap/Wall gap) - Chamber Temp. Control. - ESC Dielectric Materials - Uniform Gas Injection

• 한국진공학회:학술대회논문집
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• 한국진공학회 2008년도 제35회 하계학술대회 초록집
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• pp.284-284
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• 2008

• 한국진공학회:학술대회논문집
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• 한국진공학회 2006년도 제31회 학술논문발표회 초록집
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• pp.128-128
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• 2006

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.1103-1106
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• 2006

We have presented a comprehensive study on threshold voltage $(V_{th})$ control of organic thin-film transistors (OTFTs) with dual-gate structure. The fabrication of dual-gate pentacene OTFTs using plasma-enhanced atomic layer deposited (PEALD) 150 nm thick $Al_2O_3$ as a bottom gate dielectric and 300 nm thick parylene or PEALD 200 nm thick $Al_2O_3$ as both a top gate dielectric and a passivation layer is reported. The $V_{th}$ of OTFT with 300 nm thick parylene as a top gate dielectric is changed from 4.7 V to 1.3 V and that with PEALD 200 nm thick $Al_2O_3$ as a top gate dielectric is changed from 1.95 V to -9.8 V when the voltage bias of top gate electrode is changed from -10 V to 10 V. The change of $V_{th}$ of OTFT with dual-gate structure has been successfully understood by an analysis of electrostatic potential.

• Biomolecules & Therapeutics
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• 제14권1호
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• pp.40-44
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• 2006

Mirtazapine is an antidepressant agent with dual action on both the noradrenergic and serotonergic neurotransmitter systems. A simple high performance liquid chromatographic method has been developed and validated for the quantitative determination of mirtazapine in human plasma. A reversed-phase Cl8 column was used for the determination of mirtazapine with a mobile phase composed of 0.01M ammonium acetate solution (pH 4.2) and acetonitrile (75:25, v/v%) at a flow rate of 1.2 mL/min. Terazosin hydrochloride was used as an internal standard. The fluorescence detector was set at excitation and emission wavelengths of 290 and 350 nm, respectively. Intra- and inter-day precision and accuracy were acceptable for all quality control samples including the lower limit of quantification of 3 ng/mL. Mirtazapine was stable in human plasma under various storage conditions. This method was used successfully for a pharmacokinetic study using plasma samples after oral administration of a single 30 mg dose as mirtazapine base to 8 healthy volunteers. The maximum plasma concentration of mirtazapine was $64.1{\pm}28.0ng/mL$ at 1.8 h, and the area under the curve and elimination half-life were calculated to be $674.1{\pm}218.5ng\;h/mL\;and\;23.4{\pm}3.8h$, respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.480-484
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• 2006

We propose a new PDP cell structure named DIDE (Dual Ignition Discharge Electrodes) structure with a long electrode gap to realize a high luminous efficacy. Suggested DIDE structure basically has a long electrode gap $(200{\mu}m{\sim}400{\mu}m)$, nevertheless, because of auxiliary electrodes formed on the front panel, can be driven at relatively low voltage. The discharge characteristic of DIDE structure was much different from that of conventional structure, which was analyzed by IR emission images using IICCD (Image Intensified Charge Coupled Device). The study can explain some particular characteristics of DIDE structure. As a result, the long electrode gap and low voltage effect can be expected in DIDE structure, and a very high luminous efficacy of 7.5 lm/W has been achieved in monochrome green test panel adopting the new cell structure with Ne-Xe (12%) mixture at 400 torr.

• Applied Science and Convergence Technology
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• 제26권6호
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• pp.189-194
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• 2017

Effects of gas injection scheme and rf driving current configuration in a dual turn inductively coupled plasma (ICP) system were analyzed by 3D numerical simulation using CFD-ACE+. Injected gases from a tunable gas nozzle system (TGN) having 12 horizontal and 12 vertical nozzles showed different paths to the pumping surface. The maximum velocity from the nozzle reached Mach 2.2 with 2.2 Pa of Ar. More than half of the injected gases from the right side of the TGN were found to go to the pump without touching the wafer surface by massless particle tracing method. Gases from the vertical nozzle with 45 degree slanted angle soared up to the hottest region beneath the ceramic lid between the inner and the outer rf turn of the antenna. Under reversed driving current configuration, the highest rf power absorption region were separated into the two inner islands and the four peaked donut region.

• 한국표면공학회지
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• 제54권6호
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• pp.307-314
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• 2021

Diamond-like carbon (DLC) is difficult to achieve sufficient adhesion because of weak bonding between DLC film and the substrate. The purpose of this study is to improve the adhesion between substrate and DLC film. DLC film was deposited on AISI H13 using linear ion source. To improve adhesion, the substrate was treated by dual post plasma nitriding. In order to define the mechanism of the improvement in adhesive strength, the gradient layer between substrate and DLC film was analyzed by Glow Discharge Spectrometer (GDS) and Scanning Electron Microscope (SEM). The microstructure of the DLC film was analyzed using a micro Raman spectrometer. Mechanical properties were measured by nano-indentation, micro vickers hardness tester and tribology tester. The characteristic of adhesion was observed by scratch test. The adhesion of the DLC film was enhanced by active screen plasma nitriding layer.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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• pp.310-311
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• 2011

Dual-frequency (DF) capacitively coupled plasmas (CCP) are used to separately control the mean ion energy and flux at the electrodes [1]. This separate control in capacitively coupled radio frequency discharges is one of the most important issues for various applications of plasma processing. For instance, in the Plasma Enhanced Chemical Vapor Deposition processes such as used for solar cell manufacturing, this separate control is most relevant. It principally allows to increase the ion flux for high deposition rates, while the mean ion energy is kept constant at low values to prevent highly energetic ion bombardment of the substrate to avoid unwanted damage of the surface structure. DF CCP can be analyzed in a fashion similar to single-frequency (SF) driven with effective parameters [2]. It means that DF CCP can be converted into SF CCP with effective parameters such as effective frequency and effective current density. In this study, comparison of DF CCP and its converted effective SF CCP is carried out through particle-in-cell/Monte Carlo (PIC-MCC) simulations. The PIC-MCC simulation shows that DF CCP and its converted effective SF CCP have almost the same plasma characteristics. In DF CCP, the negative resistance arises from the competition of the effective current and the effective frequency [2]. As the high-frequency current increases, the square of the effective frequency increases more than the effective current does. As a result, the effective voltage decreases with the effective current and it leads to an increase of the ion flux and a decrease of the mean ion energy. Because of that, the negative resistance regime can be called the preferable regime for solar cell manufacturing. In this preferable regime, comparison of DF (13.56+100 or 200 MHz) CCP and SF (60 MHz) CCP with the same effective current density is carried out. At the lower effective current density (or at the lower plasma density), the mean ion energy of SF CCP is lower than that of DF CCP. At the higher effective current density (or at the higher plasma density), however, the mean ion energy is lower than that of SF CCP. In this case, using DF CCP is better than SF CCP for solar cell manufacturing processes.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.210-210
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• 2011

The effects of CH2F2 and N2 gas flow rates on the etch selectivity of silicon nitride (Si3N4) layers to extreme ultra-violet (EUV) resist and the variation of the line edge roughness (LER) of the EUV resist and Si3N4 pattern were investigated during etching of a Si3N4/EUV resist structure in dual-frequency superimposed CH2F2/N2/Ar capacitive coupled plasmas (DFS-CCP). The flow rates of CH2F2 and N2 gases played a critical role in determining the process window for ultra-high etch selectivity of Si3N4/EUV resist due to disproportionate changes in the degree of polymerization on the Si3N4 and EUV resist surfaces. Increasing the CH2F2 flow rate resulted in a smaller steady state CHxFy thickness on the Si3N4 and, in turn, enhanced the Si3N4 etch rate due to enhanced SiF4 formation, while a CHxFy layer was deposited on the EUV resist surface protecting the resist under certain N2 flow conditions. The LER values of the etched resist tended to increase at higher CH2F2 flow rates compared to the lower CH2F2 flow rates that resulted from the increased degree of polymerization.