• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.351-352
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• 2008

A new high efficient red PhOLED using a host of $Bebq_2$ and double dopants of $(pq)_2$Ir(acac) and SEC-R411 have been fabricated and evaluated. The device doubly doped with $(pq)_2$Ir(acac) and SFC-R411 showed the current efficiency improvement of 22% under a luminance of 10000 cd/$m^2$ in comparision with the device singly doped with SFC-R411. The luminance, current efficiency and central wavelength of the doubly doped device were 9300 cd/$m^2$ at 7V, 11.1 cd/A under a luminance of 10000 cd/$m^2$ and 625 nm, respectively.

• Journal of the Semiconductor & Display Technology
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• v.8 no.4
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• pp.15-19
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• 2009

A high efficient organic red light emitting device with structure of DNTPD/TAPC/$Bebq_2$ :[$(pq)_2Ir(acac)$, SFC-411]/SFC-137 was fabricated on the plastic substrate, which can be applied in the fields of flexible display and illumination. In the device structure, N,N'-diphenyl-N,N'-bis-[4-(phenyl-m-tolylamino)-phenyl]-biphenyl-4,4'-diamine[DNTPD] as a hole injection layer and 1,1-bis-(di-4-tolylaminophenyl) cyclohexane [TAPC] as a hole transport were used. Bis(10-hydroxybenzo[h]quinolinato) beryllium complex [$Bebq_2$] was used as a light emitting host material. The host material, $Bebq_2$ was doubly doped with volume ratio of 7% iridium(III)bis-(2-phenylquinoline)acetylacetonate[$(pq)_2$Ir(acac)] and 3% SFC-411[red phosphor dye coded by the proprietary company]. And then, SFC-137 was used as an electron transport layer. The luminous intensity and current efficiency of the fabricated device were $22,780\;cd/m^2$ at 9V and 17.3 cd/A under $10,000\;cd/m^2$, respectively. The maximum current efficiency of the device was 22.4cd/A under $580\;cd/m^2$.

• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.166-166
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• 2006

The photoluminescence (PL) efficiency of $Ir(ppy)_{3}$:PVK is lower than $Ir(ppy)_{3}$:CBP for the whole range of doping concentration and this low PL efficiency can be a reason of the lower efficiency of PhPLED than PhOLED. The lower efficiency is originated from the large bi-excitonic quenching such as the triplet-triplet annihilation. The PhPLEDs showed very short lifetime. The short lifetime was found to be originated from the instability of the doubly reduced $Ir(ppy)_{3^{-2}}$. The double reduction takes place because of the low electron mobility of PVK and large energy difference of LUMO level between PVK and $Ir(ppy)_{3}$.

• Proceedings of the Optical Society of Korea Conference
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• 2000.02a
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• pp.52-53
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• 2000

광굴절 단결정을 이용한 홀로그램 저장은 일반적으로 Fe 흑은 Ce 과 같이 한 가지 종류의 이온이 첨가된 재료를 사용해왔다. 그러나 저장된 홀로그램 정보를 재생할때 지워지지 않도록 정착화를 위해 사용된 열이나 전기장 대신 자외선을 이용한 방법이 최근에 시도되고 있다$^{(1)}$ . 이 방법은 모든 것을 광으로 처리할 수 있는 장점이 있으나 2광자 기록방법$^{(2)}$ 과는 달리 두 가지 종류의 이온 첨가물이 필요하므로 전하의 이동이나 트랩과정이 더욱 복잡할 수밖에 없다. 특히 LiNbO$_3$ 재료는 photovoltaic 특성이 매우 강하여 다른 광굴절 재료와 구별된다. congruent Mn,Fe:LiNbO$_3$에 대한 실험 결과[1]와 stoichiometric LiNbO$_3$에서의 작은 polaron과 쌍 polaron에 의한 기록과 재생실험결과$^{(3)}$ 의 발표는 있으나 2중 첨가물의 LiNbO$_3$에 대한 이론적 접근은 아직 알려진 바 없다. 본 연구에서는 Mn,Ce:LiNbO$_3$와 Fe,W:LiNbO$_3$에서의 홀로그램 기록특성을 연구하였고 photovoltaic 효과를 고려한 홀로그램의 형성과 소멸과정에 대한 수치해석을 이용하여 결과의 설명을 시도하였다. (중략)

• Korean Journal of Materials Research
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• v.30 no.8
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• pp.406-412
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• 2020

SrMoO₄:RE³⁺ (RE=Dy, Sm, Tb, Eu, Dy/Sm) phosphors are prepared by co-precipitation method. The effects of the type and the molar ratio of activator ions on the structural, morphological, and optical properties of the phosphor particles are investigated. X-ray diffraction data reveal that all the phosphors have a tetragonal system with a main (112) diffraction peak. The emission spectra of the SrMoO₄ phosphors doped with several activator ions indicate different multicolor emissions: strong yellow-emitting light at 573 nm for Dy³⁺, red light at 643 nm for Sm³⁺, green light at 545 nm for Tb³⁺, and reddish orange light at 614 nm for Eu³⁺ activator ions. The Dy³⁺ singly-doped SrMoO₄ phosphor shows two dominant emission peaks at 479 and 573 nm corresponding to the ⁴F_9/2→⁶H_15/2 magnetic dipole transition and ⁴F_9/2→⁶H_13/2 electric dipole transition, respectively. For Dy³⁺ and Sm³⁺ doubly-doped SrMoO₄ phosphors, two kinds of emission peaks are observed. The two emission peaks at 479 and 573 nm are attributed to ⁴F_9/2→⁶H_15/2 and ⁴F_9/2→⁶H_13/2 transitions of Dy³⁺ and two emission bands centered at 599 and 643 nm are ascribed to ⁴G_5/2→⁶H_7/2 and ⁴G_5/2→⁶H_9/2 transitions of Sm³⁺. As the concentration of Sm³⁺ increases from 1 to 5 mol%, the intensities of the emission bands of Dy³⁺ gradually decrease; those of Sm³⁺ slowly increase and reach maxima at 5 mol% of Sm³⁺ ions, and then rapidly decrease with increasing molar ratio of Sm³⁺ ions due to the concentration quenching effect. Fluorescent security inks based on as-prepared phosphors are synthesized and designed to demonstrate an anti-counterfeiting application.

• Bulletin of the Korean Chemical Society
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• v.13 no.3
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• pp.248-252
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• 1992

$ZrO_2-dopedYb_2O_3solid$ solutions containing 1, 3, 5, 7 and 9 mol% $ZrO_2were$ synthesized from spectroscopically pure $Yb_2O_3$ and $ZrO_2$ powders and found to be rare earth C-type structure by XRD technique. Electrical conductivities were measured as a function of temperatures from 700 to $1050^{\circ}C$ and oxygen partial pressures from 1${\times}$$10^-5$ to 2${\times}$ $10^-1$atm. The electrical conductivities depend simply on temperature and the activation energies are determined to be 1.56-1.68 $_eV$. The oxygen partial pressure dependence of the electrical conductivity shows that the conductivity increases with increasing oxygen partial pressure, indicating p-type semiconductor. The $PO_2$ dependence of the system is nearly power of 1/4. It is suggested from the linearity of the temperature dependence of electrical conductivity and only one value of 1/n that the solid solutions of the system have single conduction mechanism. From these results, it is concluded that the main defects of the system are negatively doubly charged oxygen interstitial in low. $ZrO_2doping$ level and negatively triply charged cation vacancy in high doping level and the electrical conduction is due to the electronic hole formed by the defect structure.