• Journal of ILASS-Korea
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• v.21 no.2
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• pp.88-94
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• 2016

In this study digital holographic microscopy system for measurements of 3-D velocities of particles in MR fluid is developed. Holograms are recorded using either a CCD camera with a double pulse laser or a high-speed camera with a continuous laser. To process recorded holograms, the correlation coefficient method is used for focal plane determination of particles. To remove noise and improve the quality of holograms and reconstructed images, a Wiener filter is adopted. The two-threshold and image segmentation methods are used for binary image transformation. For particle pairing, the match probability method is adopted. The developed system will be applied to measurements of the characteristics of unsteady 3-D particle velocities in MR fluids through the next stage of this study.

• Journal of ILASS-Korea
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• v.15 no.2
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• pp.53-60
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• 2010

This study presents development of digital particle holographic system and its application to spray field to measure three-dimensional velocities and sizes of spray droplets. A double exposure hologram recording system with synchronization system for time control was established and digital holograms can be recorded in a short time interval. To process recorded holograms, the correlation coefficient method was used for focal plane determination of particles. To remove noises and improve the quality of holograms and reconstructed images, the Wiener filter was adopted. The two-threshold and image segmentation methods were used in binary image transformation. For particle pairing, the match probability method was adopted. The developed system was applied to spray field and three-dimensional velocities and sizes of spray droplets were measured. The measurement results of digital holographic system were compared with those made by laser instruments, PDPA(Phase Doppler Particle Analyzer), which proved the feasibility of in-line digital particle holographic system as a good measurement tool for spray droplets.

• Journal of Ocean Engineering and Technology
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• v.3 no.2
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• pp.601-601
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• 1989

The behavior of fatigue was studied by using low carbon steel bar with microhole(artificial small defect) under the condition of rotary bending stress which is made artificially at smooth surface and round notch root. The results obtained can be summerized; The behavior of non-propagating cracks which are produced at both tips of small defect occurred to dissymmetry, and it is found to be double size of small defect. For the range of l>lc, threshold stress intensity is constant. However, for the range of l

• Journal of Ocean Engineering and Technology
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• v.3 no.2
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• pp.101-107
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• 1989

The behavior of fatigue was studied by using low carbon steel bar with microhole(artificial small defect) under the condition of rotary bending stress which is made artificially at smooth surface and round notch root. The results obtained can be summerized; The behavior of non-propagating cracks which are produced at both tips of small defect occurred to dissymmetry, and it is found to be double size of small defect. For the range of l>lc, threshold stress intensity is constant. However, for the range of l

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.5 no.4
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• pp.408-413
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• 1995

We investigated the effect of mechanical backside damage upon minority carrier recombination lifetime measurement in Czochralski silicon substrate by laser excitation/microwave reflection photoconductance decay method. The intensity of mechanical damage was evaluated by X-ray double crystal rocking curve, X-ray section topography and wet oxidation/preferential etch methods. The data indicate that the higher the mechanical damage intensity, the lower the minority carrier lifetime, and the threshold full width at half maximum value which affect minority carrier lifetime measurement is about 13 secs.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2015.05a
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• pp.829-831
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• 2015

본 연구에서는 비대칭 이중게이트 MOSFET의 채널길이와 채널두께의 비에 따른 문턱전압 및 전도중심의 변화를 분석하고자한다. 비대칭 이중게이트 MOSFET는 상하단 게이트 전압에 의하여 전류흐름을 제어할 수 있어 단채널효과를 감소시킬 수 있다는 장점이 있다. 그러나 채널길이가 감소하면 필연적으로 발생하는 문턱전압의 급격한 변화는 소자 특성에 커다란 영향을 미치고 있다. 특히 상하단의 게이트 전압, 상하단의 게이트 산화막 두께 그리고 도핑분포변화에 따라 발생하는 전도중심의 변화는 문턱전압을 결정하는 중요 요소가 된다. 해석학적으로 문턱전압 및 전도중심을 분석하기 위하여 해석학적 전위분포를 포아송방정식을 통하여 유도하였다. 다양한 채널길이 및 채널두께에 대하여 전도중심과 문턱전압을 계산한 결과, 채널길이와 채널두께의 비 등 구조적 파라미터뿐만이 아니라 도핑분포 및 게이트 전압 등에 따라 전도중심과 문턱전압은 크게 변화한다는 것을 알 수 있었다.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1081-1086
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• 2005

Dynamic behavior of carbon nanotubes (CNTs) in an electric field is directly observed by in-situ transmission electron microscopy (TEM). The CNT field emitters examined by in-situ TEM are multiwalled, double-walled and single walled CNTs. Threshold fields for electron emission and sustainable emission currents depending on the structure of CNTs are presented, and degradation mechanism of the CNT field emitters is discussed. In addition to the microscopy studies on individual CNTs, our recent development in surface treatment of CNT layers grown by chemical vapor deposition, which brings about high density of emission current and high uniformity, is also presented.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1994.11a
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• pp.50-53
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• 1994

In this study. we report the properties of optically pumped stimulated emission at room temperature (RT) from column-III nitride semiconductors of GaN, GaInN, AlGaN/GaN double hetero-structure (DH) and AlGaN/GaInN DH which grown by low pressure metal-organic vapor phase epitaxy on sapphire substrate using an AIN buffer-layer. The peak wavelength of the stimulated emission at RT from AlGaN/GaN DH is 370nm and the threshold of excitation pumping power density (P$\_$th/) is about 89㎾/$\textrm{cm}^2$, and they from AlGaN/GaInN DH are 403nm and 130㎾/$\textrm{cm}^2$, respectively. The P$\_$th/ of AlGaN/GaN and AlGaN/GaInN DHs are lower than the bulk materials due to optical confinement within the active layers of GaN and GaInN. The optical gain and the polarization of stimulated emission characteristics are presented in this article.

• Journal of information and communication convergence engineering
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• v.8 no.4
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• pp.449-452
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• 2010

We have analyzed channel doping and dimensions(channel length, width and thickness) for the optimum subthreshold characteristics of DG(Double Gate) MOSFET based on the model of MicroTec 4.0. Since the DGMOSFET is the candidate device to shrink short channel effects, the determination of design rule for DGMOSFET is very important to develop sub-100nm devices for high speed and low power consumption. As device size scaled down, the controllability of dimensions and oxide thickness is very low. We have analyzed the short channel effects for the variation of channel dimensions, and found the design conditions of DGMOSFET having the optimum subthreshold characteristics for digital applications.

• Journal of computational fluids engineering
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• v.12 no.4
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• pp.20-27
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• 2007

Two-dimensional stagnation flow toward a plane wall coated with magnetic fluid of uniform thickness is investigated. The flow field is represented as a similarity solution of the Navier-Stokes equation for this incompressible laminar flow. The resulting third order ordinary differential equation is solved numerically by using the shooting method and by determining two shooting parameters so as to satisfy the boundary and interface conditions. Features of the flow including streamline patterns are investigated for the varying values of density ratio, viscosity ratio, and Reynolds number. An adverse flow with double eddy pair in magnetic fluid region is found to emerge as the Reynolds number becomes higher than a threshold value. The results for the interface velocity, interface and wall shear stress, and boundary layer and displacement thickness are also presented.