• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2000.11a
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• pp.133-136
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• 2000

We investigated the improvement of viewing angle using a patterned double twisted (PDT) vertical-alignment (VA) cell mode on a homeotropic alignment layer. Good voltage-transmittance curves for negative dielectric anisotropic nematic liquid crystal (NLC) using the PDT-VA cell without a negative compensation film were obtained. The viewing angle of the PDT-VA cell without a negative compensation film was wider than that of a conventional VA cell.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.133-136
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• 2000

We investigated the improvement of viewing angle using a patterned double twisted (PDT) vertical-alignment (VA) cell mode on a homeotropic alignment layer. Good voltage-transmittance curves for negative dielectric anisotropic nematic liquid crystal (NLC) using the PDT-VA cell without a negative compensation film were obtained. The viewing angle of the PDT-VA cell without a negative compensation film was wider than that of a conventional VA cell.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.2
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• pp.221-226
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• 1998

Amorphous (Ba, Sr)$TiO_3$[BST] layer(30, 70 nm) was introduced between crystalline BST and $RuO_2$electrode to realize double-layered BST structure in order to improve the properties of BST film. The structure and surface morphology of double-layered BST film were modified by the application of amorphous BST layer; that is, surface became smoother and grain size increased abruptly. Amorphous layer thicker than 30 nm was effective to hinder the influence of $RuO_2$surface on the structure of as-grown BST films by in-situ process. Dielectric constant of double-layered BST film was improved dramatically from 152 to 340 and leakage current was lowered from $1.25{\times}10^{-5}A/{\textrm}{cm}^2);to;6.85{\times}10^{-7}A/{\textrm}{cm}^2$, respectively.

• Korean Journal of Materials Research
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• v.27 no.11
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• pp.590-596
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• 2017

We demonstrated a CNT synaptic transistor by integrating 6,6-phenyl-C61 butyric acid methyl ester(PCBM) molecules as charge storage molecules in a polyimide(PI) dielectric layer with carbon nanotubes(CNTs) for the transistor channel. Specifically, we fabricated and compared three different kinds of CNT-based synaptic transistors: a control device with $Al_2O_3/PI$, a single PCBM device with $Al_2O_3/PI:PCBM$(0.1 wt%), and a double PCBM device with $Al_2O_3/PI:PCBM$(0.1 wt%)/PI:PCBM(0.05 wt%). Statistically, essential device parameters such as Off and On currents, On/Off ratio, device yield, and long-term retention stability for the three kinds of transistor devices were extracted and compared. Notably, the double PCBM device exhibited the most excellent memory transistor behavior. Pulse response properties with postsynaptic dynamic current were also evaluated. Among all of the testing devices, double PCBM device consumed such low power for stand-by and its peak current ratio was so large that the postsynaptic current was also reliably and repeatedly generated. Postsynaptic hole currents through the CNT channel can be generated by electrons trapped in the PCBM molecules and last for a relatively short time(~ hundreds of msec). Under one certain testing configuration, the electrons trapped in the PCBM can also be preserved in a nonvolatile manner for a long-term period. Its integrated platform with extremely low stand-by power should pave a promising road toward next-generation neuromorphic systems, which would emulate the brain power of 20 W.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.7
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• pp.311-315
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• 2002

Chemical mechanical polishing (CMP) process was required for the global planarization of inter-metal dielectric(IMD), inter-level dielectric (ILD) layers of multi-layer interconnections. In this paper, we studied the characteristics of polishing pad, which can apply shallow trench isolation (STI)-CMP process for global planarization of multi-level interconnection structure. Also, we investigated the effects of different sets of polishing pad, such as soft and hard pad. As an experimental result, hard pad showed center-fast type, and soft pad showed edge-fast type. Totally, the defect level has shown little difference, however, the counts of scratch was detected less than 2 on JR111 pad. Through the above results, we can select optimum polishing pad, so we can expect the improvements of throughput and device yield.

• Current Optics and Photonics
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• v.4 no.2
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• pp.134-140
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• 2020

A significant enhancement of the magneto-optical Faraday rotation and extraordinary optical transmission (EOT) in the cascaded double-fishnet (CDF) structure with periodic rectangular apertures is theoretically predicted by using the extended finite difference time domain (FDTD) method. The results demonstrate that the transmittance spectrum of the CDF structure has two EOT resonant peaks in a broad spectrum spanning visible to near-infrared wavebands, one of them coinciding with the enhanced Faraday rotation and large figure of merit (FOM) at the same wavelength. It is most important that the resonant position and intensity of the transmittance, Faraday rotation and FOM can be simply tailored by adjusting the incident wavelength, the thickness of the magnetic layer, and the offset between two metallic rectangular apertures, etc. Furthermore, the intrinsic physical mechanism of the resonance characteristics of the transmittance and Faraday rotation is thoroughly studied by investigating the electromagnetic field distributions at the location of resonance. It is shown that the transmittance resonance is mainly determined by different hybrid modes of surface plasmons (SPs) and plasmonic electromagnetically induced transparency (EIT) behavior, and the enhancement of Faraday rotation is mostly governed by the plasmonic electromagnetically induced absorption (EIA) behavior and the conversion of the transverse magnetic (TM) mode and transverse electric (TE) mode in the magnetic dielectric layer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.8
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• pp.679-687
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• 2001

It is known that amorphous BaTiO$_3$ thin films have good insulating properties[1][2]. In this investigation, amorphous BaTiO$_3$ thin films were deposited by rf magnetron sputtering on thick BaTiO$_3$ films of AC powder EL devices which were fabricated by screen-printing. The electrical and optical properties of the EL devices were then investigated. Adding amorphous BaTiO$_3$ thin film, it showed that leakage current density was decreased. Especially, leakage current density was decreased more with he sample of 0.5-hour deposition than the sample of 4-hours deposition. This result led to the improvement of luminous efficiency by 11%. It could be concluded that proper amorphous BaTiO$_3$ thin film deposition improved the surface property of dielectric layer.

• Tribology and Lubricants
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• v.13 no.3
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• pp.115-123
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• 1997

The electrorheological (ER) behavior of suspensions in silicone oil of silica gel powder (average particle size 49 $\mu$m) absorbed water was investigated at room temperature with electric fields up to 2.4 KV/mm. In this paper, for development of succcessful ER fluids used for wide temperature range later, we would like to know a fundamental understanding of water on ER effect. As a first step, the ER fluids involving water activated silica gel were measured not only the electrical characteristics such as dielectric constant, current density and electrical conductivity but also the rheological properties on the strength of electric field, the quantity of dispersed phase and absorbed water. From the experimental results that water absorbed to the particles directly affects to the surface charge density of electric double layer model proposed by Schwarz and makes dielectric constant and current density of ER fluids increase. The current density and dynamic yield stress $($\tau$_y)$ of water activated silica gel suspensions was in exponential proportion to the strength of electric field, the quantity of dispersed phase and absorbed water. And the optimum water quantity and weight concentration of silica gel for electrorheological effect were 4-5 wt% and 15 wt%, respectively.

• Journal of the Microelectronics and Packaging Society
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• v.11 no.3 s.32
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• pp.63-70
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• 2004

The structural, electrical properties of $(Ba, Sr)TiO_3[BSTO]/RuO_2$ thin films were examined by the addition of amorphous BSTO layer between crystlline BSTO film and $RuO_2$ substrate. We prepared BSTO films with double-layered structure, that is, amorphous layers deposited at $60^{\circ}C$ and crystalline films. Crystalline films were prepared at 550 on amorphous BSTO layer. The thickness of the amorphous layers was varied from 0 to 170 nm. During the deposition of crystalline films, the crystallization of the amorphous layers occurred and the structure was changed to circular while crystalline BSTO films showed columnar structure. Due to insufficient annealing effect, amorphous BSTO phase was observed when the thickness of the amorphous layers exceeded 30 nm. Amorphous BSTO layer could also prevent the formation of oxygen deficient region in $RuO_2$ surface. Leakage current of total BSTO films decreased with increasing amorphous layer thickness due to structural modifications. Dielectric constant showed maxi-mum value of 343 when amorphous layer thickness was 30 nm at which the improvement by grain growth and the degradation by amorphous phase were balanced.

• Applied Science and Convergence Technology
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• v.24 no.2
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• pp.33-40
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• 2015

$ZrO_2$ and Al-Zr composite oxide film was prepared by vacuum assisted sol-gel dip coating method and anodizing. $ZrO_2$ films annealed above $400^{\circ}C$ have tetragonal structure. $ZrO_2$ layers inside etch pits were successfully coated from the $ZrO_2$ sol. The double layer structures of samples were obtained after being anodized at 100 V to 600 V. From the TEM images, it was found that the outer layer was $Al_2O_3$, the inner layer was multi-layer of $ZrO_2$, Al-Zr composite oxide and Al hydrate. The capacitance of $ZrO_2$ coated foil exhibited about 28.3% higher than that of non-coating foil after being anodized at 100 V. The high capacitance of $ZrO_2$ coated foils anodized at 100 V can be attributed to the relatively high percentage of inner layer in total thickness. The electrical properties, such as withstanding voltage and leakage current of coated and non-coated Al foils showed similar values. From the results, $ZrO_2$ and Al-Zr composite oxide is promising to be used as the partial dielectric of high voltage capacitor to increase the capacitance.