• 한국결정성장학회지
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• 제27권6호
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• pp.282-288
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• 2017

본 논문에서는 광전 음극 이미지 센서로 사용될 수 있는 광소자용 재료로 III-V 족 화합물 반도체인 GaAs/AlGaAs 다층 구조를 LPE(Liquid Phase Epitaxy) 방법에 의해 성장하였다. n형 GaAs 기판 위에 수십 nm의 GaAs 완충층을 형성 한 후 Zn가 도핑된 p-AlGaAs 에칭 정지 층(etching stop layer)과 Zn가 도핑된 p-GaAs 층 그리고 Zn가 도핑된 p-AlGaAs 층을 성장하였다. 성장된 시료의 특성을 조사하기 위하여 주사전자현미경(SEM)과 이차이온질량분석기(SIMS) 그리고 홀(Hall) 측정 장치 등을 이용하여 GaAs/AlGaAs 다층 구조를 분석하였다. 그 결과 $1.25mm{\times}25mm$의 성장 기판에서 거울면(mirror surface)을 가지는 p-AlGaAs/p-GaAs/p-AlGaAs 다층 구조를 확인할 수 있었으며, Al 조성은 80 %로 측정 되었다. 또한 p-GaAs층의 캐리어 농도는 $8{\times}10^{18}/cm^2$ 범위까지 조절할 수 있음을 확인하였다. 이 결과로부터 LPE 방법에 의해 성장된 p-AlGaAs/p-GaAs/AlGaAs 다층 구조는 광전 음극 이미지 센서의 소자로서 이용될 수 있을 것으로 기대한다.

• Journal of Information Display
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• 제9권3호
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• pp.8-11
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• 2008

A novel non-alkoxide sol-gel process for synthesizing Ga-doped ZnO thin film on glass was derived for possible use as a transparent electrode in flat-panel displays, using zinc acetate dehydrate as the starting material. The structural and electrical properties of thin films have been characterized as functions of Ga addition and post-heat-treatments. Their carrier density, Hall mobility, and optical transmittance were measured and discussed herein to explain the characteristics of the sol-gel-derived Ga-doped ZnO thin film on glass.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1993년도 추계 학술발표 강연 및 논문 개요집
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• pp.80-80
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• 1993

• 대한전기학회:학술대회논문집
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• 대한전기학회 1989년도 하계종합학술대회 논문집
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• pp.314-318
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• 1989

Thin films of undoped and Ga-doped zinc oxide have been prepared by rf sputtering. The films deposited on substrates, which have a columnar structure with the c-axis perpendicular to the substrate surface, consist of very small crystal grains (500-1000 ${\AA}$). Considering doping effects, the electrical resistivity of Ga-doped films decreased by an order of $10^3$ compared to undoped films and the optical transmission was above 80% in the visible range and the optical band gap widened as the Ga content increased.

• 대한전자공학회논문지
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• 제27권2호
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• pp.93-97
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• 1990

도핑된 半導體 界面의 界面電荷 近似式과 構造를 提案하였다. III-V族 化合物 半導體인 p-GaP,p-InP,n-GaAs와 $C_sNO_3$ 水性 電解質 界面에서 整流現象은 循環電流-電壓特性으로 定性的 解析을 하였다. 半導體 界面의 電流-電壓 特性曲線, 이온 吸着과 電位障壁 過程은 連續循環電壓方法으로 實證하였다. 도핑된 半導體-電解質 界面에서 pn 또는 np 接合構造와 그에 따른 整流形은 空間電荷에 의하여 決定된다.

• 한국전기전자재료학회논문지
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• 제25권12호
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• pp.984-989
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• 2012

We have investigated the structural, electrical and optical properties of Ga-doped ZnO (GZO) thin films prepared by RF magnetron sputtering with laboratory-made ZnO targets containing 1, 3, 5, 7 wt% of $Ga_2O_3$ powder as a doping source. The GZO thin films show the typical crystallographic orientation with c-axis regardless of $Ga_2O_3$ content in the targets. The $3,000{\AA}$ thick GZO thin films with the lowest resistivity of $7{\times}10^{-4}{\Omega}{\cdot}cm$ are obtained by using the GZO ($Ga_2O_3$= 5 wt%) target. Optical transmittance of all films shows higher than 80% at the visible region. The optical energy band gap for GZO films increases as the carrier concentration ($n_e$) in the film increases.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.297-297
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• 2010

Transparent conductive Oxide (TCO) is an essential material in the various optoelectronic applications as a transparent electrode, such as solar cells, flat panel displays and organic light emitting diodes. Currently, Indium tin oxide (ITO) is commonly used in industry due to its low electrical resistivity, high transmittance and high adhesion to substrate. However, ITO is expensive and should be prepared at high temperature, which makes it hard to use ITO in flexible devices. In this regard, Ga-doped ZnO is expected as an ideal candidate for replacing ITO.

• Transactions on Electrical and Electronic Materials
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• 제5권5호
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• pp.173-179
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• 2004

The influence of heavily Si impurity doping in the GaN barrier of InGaN/GaN multi-quantum well structures of blue light emitting diodes were investigated by growing samples in metal-organic chemical vapor deposition. The delta-doped sample was compared to the sample with the undoped barrier. The delta-doped sample shows the tunneling behavior and forms the energy level of 0.32 eV for tunneling and the photoemission of the 450-nm band. The photo-luminescence shows the blue-shifted broad band of the radiative transition due to the inclusion of Si delta-doped layer indicating that the delta doping effect acts to form the higher energy level than that of quantum well. The dislocation may provide the carrier tunneling channel and plays as a source of acceptor. During the tunneling of hot carrier, there was no light emission.

• 반도체디스플레이기술학회지
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• 제16권2호
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• pp.44-48
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• 2017

We explain optical and electrical properties of top and bottom-emission structured alternating-current powder electroluminescent devices (ACPELDs) with Ga-doped ZnO(GZO) transparent electrode. The top-emission ACPELDs were layered as the metal electrode/dielectric layer/emission layer/top transparent electrode and the bottom-emission ACPELDs were structured as the bottom transparent electrode/emission layer/dielectric layer/metal electrode. The yellow-emitting ZnS:Mn, Cu phosphor and the barium titanate dielectric layers were layered through the screen printing method. The GZO transparent electrode was deposited by the sputtering, its sheet resistivity is $275{\Omega}/{\Box}$. The transparency at the yellow EL peak was 98 % for GZO. Regardless of EL structures, EL spectra of ACPELDs were exponentially increased with increasing voltages and they were linearly increased with increasing frequencies. It suggests that the EL mechanism was attributed to the impact ionization by charges injected from the interface between emitting phosphor layer and the transparent electrode. The top-emission structure obtained higher EL intensity than the bottom-structure. In addition, charge densities for sinusoidal applied voltages were measured through Sawyer-Tower method.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2005년도 하계학술연구발표회 논문개요집
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• pp.22-23
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• 2005