• Polymer(Korea)
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• v.31 no.4
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• pp.308-314
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• 2007

A composite film of polyurethane(PU)-graft-poly(acrylic acid) (PAAc)/polyaniline (PU-g-AAc/PANI) was successfully fabricated for the purpose of adding conductivity on the surface of a general purpose polymer and improving adhesive property between the general purpose polymer and conducting polymer layer. The results from ATR-FTIR and XPS analyses also supported the successful synthesis of the composite film by showing characteristic peaks for every step. A low surface resistivity of $2{\times}10^3\;ohm/sq$ proved the surface conductivity of synthesized PU-g-AAc/PANI film and the surface resistance decreased with increasing the amount of grafted AAc, which acted as a dopant for PANI film.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.358-361
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• 2002

Self-aligned MOSFETS using a polysilicon gate are widely fabricated in silicon technology. The polysilicon layer acts as a mask for the source and drain implants and does as gate electrode in the final product. However, the usage of polysilicon gate as a self-aligned mask is restricted in fabricating SiC MOSFETS since the following processes such as dopant activation, ohmic contacts are done at the very high temperature to attack the stability of the polysilicon layer. A metal instead of polysilicon can be used as a gate material and even can be used for ohmic contact to source region of SiC MOSFETS, which may reduce the number of the fabrication processes. Co-formation process of metal-source/drain ohmic contact and gate has been examined in the 4H-SiC based vertical power MOSFET At low bias region (<20V), increment of leakage current after RTA was detected. However, the amount of leakage current increment was less than a few tens of ph. The interface trap densities calculated from high-low frequency C-V curves do not show any difference between w/ RTA and w/o RTA. From the C-V characteristic curves, equivalent oxide thickness was calculated. The calculated thickness was 55 and 62nm for w/o RTA and w/ RTA, respectively. During the annealing, oxidation and silicidation of Ni can be occurred. Even though refractory nature of Ni, 950$^{\circ}C$ is high enough to oxidize it. Ni reacts with silicon and oxygen from SiO$_2$ 1ayer and form Ni-silicide and Ni-oxide, respectively. These extra layers result in the change of capacitance of whole oxide layer and the leakage current

• Journal of the Korean Ceramic Society
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• v.34 no.2
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• pp.123-130
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• 1997

In this study, (Sr.Pb.Ca)TiO3-Bi2O3.3TiO2(SPCT) systems were investigated to develop a new material which has a high dielectric constant, a low dielectric loss and a small TCC(Temperature Coefficient of Capa-citance), and are suitable for high voltage applications as a function of the additions of Bi2O3.3TiO2 from 5 mol.% to 9 mol.%. The result obtained from our investigation showed that up to 6 mol.% Bi2O3.3TiO ad-dition the dielectric constant increased and it deteriorated at higher concentrations with increasing amount of the acicular grains. As a result of some dopants (SiO2, Nb2O3, MnO2) addition to SPCT, the specimens with MnO2 showed good dielectric properties. The dielectric constant decreased, but the TCC was improved with the addition of MnO2 from 0.15 wt.% to 0.45 wt. %.

• Progress in Superconductivity
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• v.11 no.2
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• pp.87-91
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• 2010

We fabricated the polyacrylic acid (PAA)-doped $MgB_2$ bulks and characterized their lattice parameters, actual C substitutions, microstructures, and critical properties. The boron (B) powder was mixed with PAA using N,N-dimethylformamide as solvent and then the solution was dried out at $200^{\circ}C$ and crushed. The C treated B powder and magnesium powder were mixed and compacted by uniaxial pressing at 500 MPa, followed by sintering at $900^{\circ}C$ for 1 h in high purity Ar atmosphere. We observed that the PAA doping increased the MgO amount but decreased the grain size, a-axis lattice constant, and critical temperature ($T_c$), which is indicative of the C substitution for B sites in $MgB_2$. In addition, the critical current density ($J_c$) at high magnetic field was significantly improved with increasing PAA addition: at 5 K and 6.6 T, the $J_c$ of 7 wt% PAA-doped sample was $6.39\;{\times}\;10^3\;A/cm^2$ which was approximately 6-fold higher than that of the pure sample ($1.04\;{\times}\;10^3\;A/cm^2$). This improvement was probably due to the C substitution and the refinement of grain size by PAA doping, suggesting that PAA is an effective dopant in improving $J_c$(B) performance of $MgB_2$.

• Polymer(Korea)
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• v.24 no.1
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• pp.29-37
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• 2000

Polyaniline (PANi)/Poly(ethylene of oxide) (PEO) in-situ blends were prepared by inducing phase separation through solvent evaporation after casting from solutions containing aniline monomer, oxidant (initiator), dopant and PEO in methanol/water mixed solvent. It was observed that the electrical conductivity first increases rapidly as PANi amount in the PANi/PEO blend increases and then slowly increases as the weight percentages of polyaniline become above 11 wt% in the blend. We also noted that the morphology of PANi/PEO blends changes when the holding time in a stirrer at constant temperature is varied and eventually affects the electrical conductivity. As the length of alkyl group in dopants increases, the electrical conductivity of doped blends increases. The PANi/PEO blend prepared with a high molecular weight of PEO yields higher electrical conductivity.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.4
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• pp.532-538
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• 1998

Emerald ($3BeO{\cdot}Al_2O_3{\cdot}6SiO_2:Cr^{3+}$) single crystal was grown by temperature gradient reflux method with using Korean natural beryl. The flux of lithium-molibudenium-vanadium oxide system was made by means of mixing the 2 sort of flux which were differently melted $Mo_3-Li_2O$ and $V_2O_5-Li_2O$ each other. The optimum composition of flux was 3 mole ratio of molibudenium. vanadium oxides to lithium oxide ($(MoO_3+V_2O_5)/Li_2O$), flux additives were substituted more less then 0.2 mole% of $K_2O$ or $Na_2O$ to the $Li_2O$ amount. The melting concentration of mixing beryl material was 3~10% content to the flux, that of $Cr_2O_3$ color dopant was 1% to the beryl amount. In the crystal growing apparatus with temperature gradient in the 3 zone furnace which was separated into the block of melt, growth and return, the solution have got to circulate continuously between $1100^{\circ}C$ and $1000^{\circ}C$ in steady state. When thermal fluctuation was treated to during 2 hrs once on a day at 950~$1000^{\circ}C$ in growth zone, the supersaturation solution was maintained, controled and emerald single crystal can be grown large crystal which was prevented from the nucleation of microcrystallite. The preferencial growth direction of hexagonal columnar emerald single crystal was the c(0001) plane of botton side and vertical to the m(1010) plane of post side.

• Transactions of the Korean hydrogen and new energy society
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• v.28 no.1
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• pp.1-8
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• 2017

Cu/Mn/Ce catalysts for water gas shift (WGS) reaction were synthesized by urea-nitrate combustion method with the fixed molar ratio of Cu/Mn as 1:4 and 1:1 with the doping concentration of Ce from 0.3 to 0.8 mol%. The prepared catalysts were characterized with SEM, BET, XRD, XPS, $H_2$-TPR, $CO_2$ TPD, $N_2O$ chemisorption analysis. The catalytic activity tests were carried out at a GHSV of $28,000h^{-1}$ and a temperature range of 200 to $400^{\circ}C$. The Cu/Mn(CM) catalysts formed Cu-Mn mixed oxide of spinel structure ($Cu_{1.5}Mn_{1.5}O_4$) and manganese oxides ($MnO_x$). However, when a small amount of Ce was doped, the growth of $Cu_{1.5}Mn_{1.5}O_4$ was inhibited and the degree of Cu dispersion were increased. Also, the doping of Ce on the CM catalyst reduced the reduction temperature and the base site to induce the active site of the catalyst to be exposed on the catalyst surface. From the XPS analysis, it was confirmed that maintaining the oxidation state of Cu appropriately was a main factor in the WGS reaction. Consequently, Ce as support and dopant in the water gas shift reaction catalysts exhibited the enhanced catalytic activities on CM catalysts. We found that proper amount of Ce by preparing catalysts with different Cu/Mn ratios.

• Journal of the Korean Ceramic Society
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• v.34 no.2
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• pp.145-156
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• 1997

ZrO2 phase transformations depending on the type and amount of dopants and the sintering temperatures were studied for the 2 components (CaO-, Y2O3-, MgO-ZrO2) and the 3 components(MgO-ZrO2-Al2O3)ZrO2 powder by X-ray diffraction and Raman spectroscopy. In the CaO- and Y2O3-ZrO2 systems, as the CaO and Y2O3 contents increased to 6~15mol% and 3~15mol% respectively, we were not able to identify between tetragonal and cubic in the X-ray diffraction patterns. On the other hand, all Raman modes shifted to lower wavenumbers, decreasing in intensity and the number of bands, markedly. These phenomena were caused by tetragonallongrightarrowcubic phase transformation and interpreted by the breakdown of the wave vector selection rule(k=0) and the structural disorder associated with the formation of oxygen sublattice which was caused by the substitution between Zr4+ ion and Ca2+ or Y3+ ion in ZrO2 matrix. The monoclinic to cubic phase transformation occurred in 10mol% MgO-ZrO2 system. As the Al2O3 content increased from 0 to 20mol% in the MgO-ZrO2-Al2O3 systems, cubic phase transformed to monoclinic phase, this is because the MgO didn't play a role in a stabilizer because of the formation of the spinel(MgAl2O4) by the reaction between MgO and Al2O3, Also, the ZrO2 phase transformation was explained by the change of it's lattice parameters depending on the type and amount of dopants. Namely, as the amount of dopant increased to 10~13mol%, the axial ra-tio c/a came close to unity with increasing the lattice parameter a and decreasing the lattice parameter c. At that time, the tetragonallongrightarrowcubic phase transformation occurred.

• Journal of Sensor Science and Technology
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• v.10 no.4
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• pp.222-231
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• 2001

The material properties of $SnO_2$ were investigated as a function of the amount of $Fe_2O_3$, the partial pressure of oxygen, the concentration of CO gas, and temperature. $Fe_2O_3$-doped $SnO_2$ thick films were prepared by the screen printing technique on alumina substrate. The specimens sintered at $700^{\circ}C$ for 6 hours showed little difference of the grain size and narrow distribution with the content of $Fe_2O_3$. The electrical conductance of undoped $SnO_2$ is high at low firing temperature and at low partial pressure of oxygen. The electrical conductance of $Fe_2O_3-$-doped $SnO_2$ is increased with measurement temperature, but decreased with the content of $Fe_2O_3$. The dependence of oxygen partial pressure is decreased with dopant addition. The highest sensitivity and the good properties of response speed and repeatability for CO gas were observed on the specimen with 0.1 mol% $Fe_2O_3$ at $350^{\circ}C$.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.10
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• pp.4660-4665
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• 2011

New precursors as a Li adsorbent, $Li_{1.6}(MnM)_{1.6}O_4$ (M=Cu, Ni, Co, Fe), were synthesized by hydrothermal method and their physicochemical properties were discussed. XRD and HRTEM results revealed that the original spinel structure was stabilized by cobalt-doping while Cu-, Ni- and Fe-doping led to structural changes. Such a structural stabilization by Cobalt-doping was maintained after lithium leaching by acid treatment. Li absorption efficiency from seawater was significantly enhanced by using the Cobalt-doped spinel manganese oxide, $Li_{1.6}[MnCo]_{1.6}O_4$, compared to the commercially available $Li_{1.33}Mn_{1.67}O_4$; the adsorbed amount of Li from 1g-adsorbent was 35 and 16 mg by $Li_{1.6}[MnCo]_{1.6}O_4$, and $Li_{1.33}Mn_{1.67}O_4$, respectively.