• Title/Summary/Keyword: dominant effect

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Electrification Tendency of Oil Adding Moisture and Dust (수분 및 머지의 첨가에 따른 절연유의 대전경향)

  • 김두석;권동진;강창구
    • The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.6 no.5
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    • pp.50-56
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    • 1992
  • This paper presents the effect of moisture and dust on streaming electrification in transformer oil, in order to investigate the electrification tendency of oil adding moisture an dust. Authors designed series electrification device to analyse streaming electrification phenomena easily. Experimental results show that the streaming current is linearly increased with oil velocity and it has a peak value at about a 50 [%]. Adding of moisture and dust in oil decreased charging level and it was dominant in case of moisture.

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Analysis on the Dynamic Characteristics of Externally Pressurized Porous Thrust Air Bearings (다공질정압 Thrust공기 베어링의 동특성 해석)

  • Park, Cheon-Hong;Lee, Hu-Sang
    • 연구논문집
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    • s.23
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    • pp.5-13
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    • 1993
  • The present work deals with the theoretical prediction of static & dynamic characteristic of annular type externally pressurized thrust air bearings with metal-sintered porous media. For the evaluation of surface loading effect by machining, it is assumed that the flow at the porous surface is dominant and which is equivalent to the flow through orifice. Finite different method with over-relaxation method is used to solve the numerical problems. The influences of radius ratio, supply pressure and squeeze number on performances are investigated, as the results. The results of this study can be used to predict the optimal running condition and stable realm of porous bearings.

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Genetic Basis of Screening of Molecular Markers for Nuclear Polyhedrosis Virus Resistance in Bombyx mori L.

  • Chen, Keping;Yao, Qin;Wang, Yong;Cheng, Jialin
    • International Journal of Industrial Entomology and Biomaterials
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    • v.7 no.1
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    • pp.5-10
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    • 2003
  • The nuclear polyhedrosis virus (NPV) resistance of silkworm is controlled by a pair of dominant genes on autosome and micro-effect modificator genes on sex chromosome Z and has the phenomenon of patroclinal inheritance. Based on its hereditary characteristics, methods of preparing near isogenic lines and their $F_2$ populations for screening molecular markers were designed.

Temperature Compensation and Analysis of an Low-cost IMU (온도에 따른 저급 IMU의 특성 분석 및 보상)

  • Jin, Yong;Park, Chan-Gook;Jee, Gyu-In
    • Proceedings of the KIEE Conference
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    • 2000.07d
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    • pp.2365-2367
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    • 2000
  • The deterministic errors of semiconductor gyros and accelerometers must be estimated and compensated to develop the low-cost IMU using them. Generally, the dominant errors of the low-cost IMU are bias and misalignment errors. Bias is sensitive to temperature. Therefore, in this paper, the effect on temperature of bias is analyzed and temperature compensation are carryed out. It is shown by experiment that the compensation is efficient.

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Gas-Transport Properties through Various Cations Exchanged Sulfonated Poly(ether imide) Membranes

  • Rhim, Ji-Won
    • Korean Membrane Journal
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    • v.3 no.1
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    • pp.51-58
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    • 2001
  • The surface of Poly(ether imide) (PEI) membranes has been sulfonated using CIS03H. The resulting membranes were characterized through the analysis of ESCA and contact angle measurements The sulfonated PEI membranes were exposed to gases of $O_2$, $N_2$, and $CO_2$ to measure the permeation rates and ideal separation factors. In addition, the diffusivities and solubilities of individual gases were measured. The diffusivity effect is more dominant than the solubility one on gas transports.

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A Simulation Method for Considering the Outdoor Wind-Pressure in Calculation of Indoor Air-Flow in High-Rise Buildings (건물 내 공기유동 해석에 외부 바람이 미치는 영향의 분석)

  • Kim, Dae-Young;Song, Doo-Sam
    • Korean Journal of Air-Conditioning and Refrigeration Engineering
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    • v.28 no.2
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    • pp.55-62
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    • 2016
  • The air flows in building caused by thermal buoyancy, known as the stack effect, have a pronounced influence on both the indoor environment (thermal environment, noise, draught and contaminant diffusion) and energy needs in high-rise buildings. Prior studies for airflow in high-rise buildings were focused on the degree of stack effect and countermeasures. The wind pressure was neglected during the calculation of the indoor airflow in high-rise buildings to clarify the effect of thermal buoyancy in previous studies. However, wind is an important driving force of indoor airflows in buildings with the stack effect. In this study, the effect of wind pressure on indoor airflow in high-rise building when the stack effect is dominant in winter was analyzed. In this paper, methods that involved considering the wind pressure in airflow network simulation were analyzed.

Induction of the Nuclear Proto-Oncogene c-fos by the Phorbol Ester TPA and c-H-Ras

  • Kazi, Julhash U.;Soh, Jae-Won
    • Molecules and Cells
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    • v.26 no.5
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    • pp.462-467
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    • 2008
  • TPA is known to cooperate with an activated Ras oncogene in the transformation of rodent fibroblasts, but the biochemical mechanisms responsible for this effect have not been established. In the present study we used c-fos promoter-luciferase constructs as reporters, in transient transfection assays, in NIH3T3 cells to assess the mechanism of this cooperation. We found a marked synergistic interaction between TPA and a transfected v-Ha-ras oncogene in the activation of c-fos promoter and SRE. SRE has binding sites for TCF and SRF. A dominant-negative Ras (ras-N17) inhibited the TPA-Ras synergy by blocking the PKC-MAPK-TCF pathway. Dominant-negative RhoA and Rac1 (but not Cdc42Hs) inhibited the TPA-Ras synergy by blocking the Ras-Rho-SRF signaling pathway. Constitutively active $PKC{\alpha}$ and $PKC{\varepsilon}$ showed synergy with v-Ras. These results suggest that the activation of two distinct pathways such as Ras-Raf-ERK-TCF pathway and Rho-SRF pathway are responsible for the induction of c-fos by TPA and Ras in mitogenic signaling pathways.

Influencing Factors of Korean Female Adolescent′s Clothing Behaviors: -Effects of Psychological Characteristics, Age and Residence- (청소년기 여학생의 의복행동에 대한 영향요인 연구;연령.지역 차이와 심리적 특성 변인들의 상대적 영향력)

  • 고애란;진병호;심정은
    • Journal of the Korean Society of Clothing and Textiles
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    • v.24 no.4
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    • pp.475-486
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    • 2000
  • The purpose of this research were to identify the differences in clothing behaviors and psychological characteristics ill relation to age and residence and to identify the relative effects of Korean female adolescent's psychological characteristics on the clothing behaviors. The instruments measuring 9 psychological characteristics-adolescent egocentrism, social and general self-efficacy, public and private self-consciousness, boredom susceptibility, optimal stimulation level, body attitudes-were adapted from previous studies. Clothing behavior measurements were developed based on the pilot study results or adapted from previous studies. The data. collected from 2284 nationwide sample of Korean female adolescents(early, middle, late) was analyzed by frequency, two-way ANOVA, and LISREL confirmatory factor analysis. Clothing behavior were factor analyzed and 6 factors were identified: dressing for others. conformity to peers, clothing interest, self-expression, psychological dependence and clothing exhibition. Effects of age were dominant in 6 out of 9 psychological characteristics and five clothing behavior factors except conformity to peers. Dominant main effect of residence was found oかy in boredom susceptibility. From the results of LISREL, adolescent egocentrism, public self-consciousness and sensation seeking tendency were found to be the most influential psychological characteristics of female adolescents'clothing behaviors.

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Characteristics of Si Nano-Crystal Memory

  • Kwangseok Han;Kim, Ilgweon;Hyungcheol Shin
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.1 no.1
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    • pp.40-49
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    • 2001
  • We have developed a repeatable process of forming uniform, small-size and high-density self-assembled Si nano-crystals. The Si nano-crystals were fabricated in a conventional LPCVD (low pressure chemical vapor deposition) reactor at $620^{\circ}c$ for 15 sec. The nano-crystals were spherical shaped with about 4.5 nm in diameter and density of $5{\times}l0^{11}/$\textrm{cm}^2$. More uniform dots were fabricated on nitride film than on oxide film. To take advantage of the above-mentioned characteristics of nitride film while keeping the high interface quality between the tunneling dielectrics and the Si substrate, nitride-oxide tunneling dielectrics is proposed in n-channel device. For the first time, the single electron effect at room temperature, which shows a saturation of threshold voltage in a range of gate voltages with a periodicity of ${\Delta}V_{GS}\;{\approx}\;1.7{\;}V$, corresponding to single and multiple electron storage is reported. The feasibility of p-channel nano-crystal memory with thin oxide in direct tunneling regime is demonstrated. The programming mechanisms of p-channel nano-crystal memory were investigated by charge separation technique. For small gate programming voltage, hole tunneling component from inversion layer is dominant. However, valence band electron tunneling component from the valence band in the nano-crystal becomes dominant for large gate voltage. Finally, the comparison of retention between programmed holes and electrons shows that holes have longer retention time.

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Leakage-Suppressed SRAM with Dynamic Power Saving Scheme for Future Sub-70-nm CMOS Technology (70-nm 이하 급 초미세 CMOS 공정에서의 누설 전류 및 동적 전류 소비 억제 내장형 SRAM 설계)

  • CHOI Hun-Dae;CHOI Hyun Young;KIM Dong Myeong;KIM Daejeong;MIN Kyeung-Sik
    • Proceedings of the IEEK Conference
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    • 2004.06b
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    • pp.343-346
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    • 2004
  • This paper proposes a leakage-suppressed SRAM with dynamic power saying scheme for the future leakage-dominant sub-70-nm technology. By dynamically controlling the common source-line voltage ($V_{SL}$) of sleep cells, the sub-threshold leakage through these sleep cells can be reduced to be 1/10-1/100 due to the reverse body-bias effect, dram-induced barrier lowering (DIBL) and negative $V_{GS}$ effects. Moreover, the bit-ling leakage which mar introduce a fault during the read operation can be completely eliminated in this new SRAM. The dynamic $V_{SL}$ control can also reduce the bit-line swing during the write so that the dynamic power in write can be reduced. This new SRAM was fabricated in 0.35-${\mu}m$ CMOS process and more than $30\%$ of dynamic power saying is experimentally verified in the measurement. The leakage suppression scheme is expected to be able to reduce more than $90\%$ of total SRAM power in the future leakage-dominant 70-nm process.

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