• Journal of Magnetics
• /
• v.17 no.4
• /
• pp.242-244
• /
• 2012

We report on the basis of experiments that magnetic domain structures exhibit a transition between single and dendrite domains with respect to the width of ferromagnetic nanowires. This transition is directly observed in CoFe/Pt multilayered nanowires having a width in the range of 580 nm to 4.2 ${\mu}m$ with a magnetic force microscope. Nanowires wider than 1.5 ${\mu}m$ show typical dendrite domain patterns, whereas the nanowires narrower than 690 nm exhibit single domain patterns. The transition occurs gradually between these widths, which are similar to the typical widths of the dendrite domains. Such a transition affects the strength of the domain wall propagation field; this finding was made by using a time-resolved magneto-optical Kerr effect microscope, and shows that the domain wall dynamics also exhibit a transition in accordance with the domain configuration.

• Journal of Magnetics
• /
• v.10 no.3
• /
• pp.113-117
• /
• 2005

Some polycrystalline ferromagnetic mms are composed of continuously connected nanometer scale islands with random crystallite orientations. The nanometer perturbations of the mm introduce a large number of nearly degenerate local field configurations that are indistiguishable on a macroscopic scale. As a first step, this situation is modelled as a thin ferromagnetic disc coupled by exchange and dipole interactions to a homogeneous ferromagnetic plane, where the disc and plane have different easy axes. The model is solved to find the partial $N\acute{e}el$ domain walls that minimize the magnetic energy. The two solutions give a bistable configuration that, for appropriate geometries, provides an important microsopic ferromagnetic degree of freedom for the mm. These results are used to interpret recent measurements of exchange biased bilayer films.

• Proceedings of the Korean Magnestics Society Conference
• /
• 2016.05a
• /
• pp.188-189
• /
• 2016

• Proceedings of the Korean Magnestics Society Conference
• /
• 2016.11a
• /
• pp.113-113
• /
• 2016

• Proceedings of the Korean Magnestics Society Conference
• /
• 2008.12a
• /
• pp.203.1-203.1
• /
• 2008

• Proceedings of the Korean Magnestics Society Conference
• /
• 2007.05a
• /
• pp.118.1-118.1
• /
• 2007

• Korea-Australia Rheology Journal
• /
• v.21 no.4
• /
• pp.281-288
• /
• 2009

Numerical investigations have been conducted on the assessment of the performance of drug-eluting stent. Computational fluid dynamics is applied to investigate the flow disturbances and drug distributions released from the stent in the immediate vicinity of the given idealized stent in the protrusion into the flow domain. Our simulations have revealed the drug concentration in the flow field due to the presence of a drug-eluting stent within an arterial segment. Wall shear stress increases with Reynolds number for a given stent diameter, while it increases with stent diameter for a given Reynolds number. The drug concentration is dependent on both Reynolds number and stent geometry. In pulsatile flow, the minimum drug concentration in the zone of inter-wire spacing occurs at the maximum acceleration of the inlet flow while the maximum drug concentration gains at the maximum deceleration of the inlet flow. These results provide an understanding of the flow physics in the vicinity of drug-eluting stents and suggest strategies for optimal performance of drug-eluting stent to minimize flow disturbance.

• 유체기계공업학회:학술대회논문집
• /
• 2006.08a
• /
• pp.383-386
• /
• 2006

In this study, we propose a new fast algorithm for calculating short range forces in molecular dynamics, This algorithm uses a new hierarchical tree data structure which has a high adaptiveness to the particle distribution. It can divide a parent cell into k daughter cells and the tree structure is independent of the coordinate system and particle distribution. We investigated the characteristics and the performance of the tree structure according to k. For parallel computation, we used orthogonal recursive bisection method for domain decomposition to distribute particles to each processor, and the numerical experiments were performed on a 32-node Linux cluster. We compared the performance of the oct-tree and developed new algorithm according to the particle distributions, problem sizes and the number of processors. The comparison was performed sing tree-independent method and the results are independent of computing platform, parallelization, or programming language. It was found that the new algorithm can reduce computing cost for a large problem which has a short search range compared to the computational domain. But there are only small differences in wall-clock time because the proposed algorithm requires much time to construct tree structure than the oct-tree and he performance gain is small compared to the time for single time step calculation.

• Proceedings of the Korean Magnestics Society Conference
• /
• 2000.09a
• /
• pp.230-238
• /
• 2000

We present the magnetisation reversal dynamics of epitaxial Fe thin films grown on GaAs(001) and InAs(001) studied as a function of field sweep rate in the range 0.01-160 kOe/s using magneto-optic Kerr effect (MOKE). For 55 and 250 ${\AA}$ Fe/GaAs(001), we find that the hysteresis loop area A follows the scaling relation A ∝ H$\^$${\alpha}$/ with ${\alpha}$=0.03∼0.05 at low sweep rates and 0.33-0.40 at high sweep rates. For the 150 ${\AA}$ Fe/InAs(001) film, ${\alpha}$ is found to be ∼0.02 at low sweep rates and ∼0.17 at high sweep rates. The differing values of ${\alpha}$ are attributed to a change of the magnetisation reversal process with increasing sweep rate. Domain wall motion dominates the magnetisation reversal at low sweep rates, but becomes less significant with increasing sweep rate. At high sweep rates, the variation of the dynamic coercivity H$\sub$c/ is attributed to domain nucleation dominating the reversal process. The results of magnetic relaxation studies for easy-axis reversal are consistent with the sweeping of one or more walls through the entire probed region (∼100 $\mu\textrm{m}$). Domain images obtained by scanning Kerr microscopy during the easy cubic axis reversal process reveal large area domains separated by zigzag walls.

• Journal of the Korean institute of surface engineering
• /
• v.53 no.6
• /
• pp.330-342
• /
• 2020

Since the original report on ferroelectricity in Si-doped HfO2 in 2011, fluorite-structured ferroelectrics have attracted increasing interest due to their scalability, established deposition techniques including atomic layer deposition, and compatibility with the complementary-metal-oxide-semiconductor technology. Especially, the emerging fluorite-structured ferroelectrics are considered promising for the next-generation semiconductor devices such as storage class memories, memory-logic hybrid devices, and neuromorphic computing devices. For achieving the practical semiconductor devices, understanding polarization switching kinetics in fluorite-structured ferroelectrics is an urgent task. To understand the polarization switching kinetics and domain dynamics in this emerging ferroelectric materials, various classical models such as Kolmogorov-Avrami-Ishibashi model, nucleation limited switching model, inhomogeneous field mechanism model, and Du-Chen model have been applied to the fluorite-structured ferroelectrics. However, the polarization switching kinetics of fluorite-structured ferroelectrics are reported to be strongly affected by various nonideal factors such as nanoscale polymorphism, strong effect of defects such as oxygen vacancies and residual impurities, and polycrystallinity with a weak texture. Moreover, some important parameters for polarization switching kinetics and domain dynamics including activation field, domain wall velocity, and switching time distribution have been reported quantitatively different from conventional ferroelectrics such as perovskite-structured ferroelectrics. In this focused review, therefore, the polarization switching kinetics of fluorite-structured ferroelectrics are comprehensively reviewed based on the available literature.