• ETRI Journal
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• v.32 no.1
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• pp.151-153
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• 2010

A highly efficient linear and compactly integrated series-type Doherty power amplifier (PA) has been developed for wideband code-division multiple access handset applications. To overcome the size limit of a typical Doherty amplifier, all circuit elements, such as matching circuits and impedance transformers, are fully integrated into a single monolithic microwave integrated circuit (MMIC). The implemented PA shows a very low idle current of 25 mA and an excellent power-added efficiency of 25.1% at an output power of 19 dBm by using an extended Doherty concept. Accordingly, its average current consumption was reduced by 51% and 41% in urban and suburban environments, respectively, when compared with a class-AB PA. By adding a simple predistorter to the PA, the PA showed an adjacent channel leakage ratio better than -42 dBc over the whole output power range.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.211-212
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• 2006

This paper represents a Doherty amplifier with analog predistorter to improve the linearity of the Doherty amplifier while preserving the high efficiency. A $3^{rd}$-order predistorter cancels $5^{th}$-order intermodulation (IM5) as well as $3^{rd}$-order intermodulation (IM3) components by their same phase difference in the predistorter and Doherty amplifier. This is accomplished by independently controlling their phase by using the phase-controlled error generator in the predistorter. For experimental verification, a $3^{rd}$-order predistorter has been implemented and tested in a 180-W Doherty amplifier at the wide-band code division multiple access (WCDMA) band. The measured results show good performance with the predistortion Doherty amplifier.

• 한국정보통신설비학회:학술대회논문집
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• 2008.08a
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• pp.403-408
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• 2008

In this paper, the high efficiency and linearity Doherty power amplifier using DGS and adaptive bias technique has been designed and realized for 2.3GHz WiBro applications. The Doherty amplifier has been implemented us-ing silicon MRF 281 LDMOS FET. The RF performances of the Doherty power amplifier (a combination of a class AB carrier amplifier and a bias-tuned class C peaking amplifier) have been compared with those of a class AB amplifier alone, and conventional Doherty amplifier. The Maximum PAE of designed Doherty power amplifier with DGS and adaptive bias technique has been 36.6% at 34.01dBm output power. The proposed Doherty power amplifier showed an improvement 1dB at output power and 7.6% PAE than a class AB amplifier alone.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.44 no.2
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• pp.76-80
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• 2007

In this paper, the PAE (Power Added Efficiency) and the linearity of the Doherty amplifier has been improved using dual bias control and PBG (Photonic BandGap) structure. The PBG structure has used to implement on output matching circuit and dual bias control has applied to improve the PAE of the Doherty amplifier at a low input level by applying it to a carrier amplifier. The Doherty amplifier using the proposed structure has improved PAE by 8% and 5dBc of IMD3 (3rd Inter-Modulation Distortion) compared with those of the conventional class AB amplifier. In addition to, it has been evident that the designed the structure has showed more than a 30% increase in PAE for flatness over all input power level.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.3 no.1
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• pp.63-69
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• 2010

In this paper, a new design method of asymmetrical configuration of main amplifier and peaking amplifier using changed bias point is proposed for excellent linearity, instead of the conventional Doherty structure. We have utilized the uneven wilkinson power divider for the unequal power drive at the input network of amplifiers. And we proposed a compensating method of the decreasing efficiency due to improving linearity using 3-stage Doherty structures. From the simulation results of asymmetrical Dohertry power amplifier and asymmetrical 3-stage Doherty power amplifier with uneven power drive are implemented. From the implementation and measurement results of the each amplifier, IMD characteristics have -55 dBc as the good efficiency of 13% compensates the decreased entire efficiency due to the improving linearity characteristics.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.10 no.5
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• pp.99-104
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• 2011

This paper presents a high power and high efficiency unbalanced Doherty power amplifier used to extend the output power back-off (OPBO). The proposed unbalanced amplifier uses the same type of transistors in both the main amplifier and the peaking amplifier, similar to a conventional symmetric Doherty amplifier. The unbalanced amplifier can have the impedance of a ${\lambda}/4$ transformer located at the output of the main amplifier modified. This enables the OPBO to exceed 6 dB, the maximum OPBO for a conventional symmetric Doherty amplifier. The efficiency and linearity performance of the unbalanced Doherty amplifier are almost same as those found for the asymmetric Doherty amplifier, even though the unbalanced Doherty amplifier structure is simpler than the asymmetric Doherty structure. In order to verify the proposed amplifier performance, a 46 W Doherty amplifier has been both simulated and measured using a CDMA2000 1FA signal. From the measured results, the proposed unbalanced Doherty amplifier achieved an added power efficiency of 38 % and an adjacent channel power ratio of -34 dBc at a 885 kHz offset frequency and -35.6 dBc at a 1.98 MHz offset frequency.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.2
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• pp.108-114
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• 2016

This paper presents a 2.6 GHz Doherty power amplifier IC to enhance the back-off efficiency. In order to apply to small-cell base stations, the Doherty power amplifier was fabricated using GaN-HEMT process for high power density. In addition, the implemented Doherty power amplifier was mounted on a QFN package. The implemented GaN-HEMT Doherty power amplifier was measured using LTE downlink signal with 10 MHz bandwidth and 6.5 dB PAPR for verification. A power gain of 15.8 dB, a drain efficiency of 43.0 %, and an ACLR of -30.0 dBc were obtained at an average output power level of 33.9 dBm.

• Journal of Navigation and Port Research
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• v.30 no.5 s.111
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• pp.351-356
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• 2006

In this paper, the high efficiency Doherty power amplifier has been designed and realized for microwave applications. The Doherty amplifier has been implemented using silicon MRF 281 LDMOS FET. The RF performances cf the Doherty power amplifier (a combination of a class AB carrier amplifier and a bias-tuned class C peaking amplifier) have been compared with those of a class AB amplifier alone. The realized Doherty power amplifier P1dB output power has 33dBm at 2.3GHz frequency. Also the Doherty power amplifier shows 11dB gain and -17.8dB input return loss at 2.3GHz to 2.4GHz. The designed Doherty amplifier has been improved the average PAE by 10% higher efficiency than a class AB amplifier alone. The Maximum PAE of designed Doherty power amplifier has been 39%.

• Proceedings of the Korean Institute of Navigation and Port Research Conference
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• 2006.06b
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• pp.91-96
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• 2006

In this paper, the high efficiency Doherty power amplifier has been designed and realized for microwave applications. The Doherty amplifier has been implemented using silicon MRF 281 LOMOS FET. The RF performances of the Doherty power amplifier (a combination of a class AB carrier amplifier and a bias..tuned class C peaking amplifier) have been compared with those of a class AB amplifier alone. The realized Doherty power amplifier PldB output power has 33dBm at 2.3GHz frequency. Also the Doherty power amplifier shows 11dB gain and -17.8dB input return loss at 2.3GHz to 2.4GHz. The designed Doherty amplifier has been improved the average PAE by 10% higher efficiency than a class AB amplifier alone. The Maximum PAE of designed Doherty power amplifier has been 39%.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.8 no.2
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• pp.75-82
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• 2009

This paper proposes a method which increases the linearity using an improvement mechanism of Doherty power amplifier and compensates the decrement of efficiency due to improvement of linearity. To verify the method, a 20W power amplifier is designed and implemented. Compared with 2-way Doherty power amplifier, the implemented 3-way Doherty power amplifier with class F shows improved linearity about 10dBc and efficiency about 1.5%. Also, efficiency characteristic has been improved about 3.5% compared with the 2-way Doherty power amplifier while maintaining linearity. This results show that the proposed 3-way Doherty power amplifier with class F is shown to be adequate for improvement of efficiency and linearity. It is expected that the proposed amplifier can be used for various wireless communication system amplifiers.