• 대한금속재료학회지
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• 제49권2호
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• pp.121-127
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• 2011

The mechanical properties of the various heat treatment conditions on Ti-15Mo-3Nb-3Al-0.2Si alloy plates were examined. XRD patterns from the surface of Ti-15Mo-3Nb-3Al-0.2Si were analyzed as a solution-treated Ti alloy has the single-phase ${\beta}$ structure whereas the aged Ti alloys have the ${\beta}$ matrix embedded with ${\alpha}$ needles. High strength (~1500 MPa) with decent ductility (7%) was obtained by the Ti alloy double aged at $300^{\circ}C$ and $520^{\circ}C$ for 8 hours each. The double-aged alloy exhibits the finer structure than the single-aged alloy at $300^{\circ}C$ for 8 hours because of the higher nucleation rate of ${\alpha}$ needles at an initial low aging temperature ($320^{\circ}C$). TEM observation revealed that the fine nanostructure with ${\alpha}$ needles in the ${\beta}$ matrix ensured the excellent mechanical properties in the double aged Ti-15Mo-3Nb-3Al-0.2Si alloy. In the solution treated alloy, the yield drop, stress-serrations and the ductility minimum typically associated with dynamic strain aging can be attributed to the dynamic interaction between dislocations and oxygen atoms. The yield drop and the stress serration were not observed in aged samples because the geometrically introduced dislocations due to phase precipitates suppressed the dynamic strain aging.

• Tribology and Lubricants
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• 제38권3호
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• pp.73-83
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• 2022

This paper is concerned with an analysis of a surface edge crack emanated from a sharp contact edge. For a geometrical model, a square wedge is in contact with a half plane whose materials are identical, and a surface perpendicular crack initiated from the contact edge exists in the half plane. To analyze this crack problem, it is necessary to evaluate the stress field on the crack line which are induced by the contact tractions and pseudo-dislocations that simulate the crack, using the Bueckner principle. In this Part I, the stress filed in the half plane due to the contact is re-summarized using an asymptotic analysis method, which has been published before by the author. Further focus is given to the stress field in the half plane due to a pseudo-edge dislocation, which will provide a stress solution due to a crack (i.e. a continuous distribution of edge dislocations) later, using the Burgers vector. Essential result of the present work is the corrective functions which modify the stress field of an infinite domain to apply for the present one which has free surfaces, and thus the infiniteness is no longer preserved. Numerical methods and coordinate normalization are used, which was developed for an edge crack problem, using the Gauss-Jacobi integration formula. The convergence of the corrective functions are investigated here. Features of the corrective functions and their application to a crack problem will be given in Part II.

• 한국재료학회지
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• 제33권7호
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• pp.302-308
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• 2023

The influence of specimen geometry and notch on the hydrogen embrittlement of an SA372 steel for pressure vessels was investigated in this study. A slow strain-rate tensile (SSRT) test after the electrochemical hydrogen charging method was conducted on four types of tensile specimens with different directions, shapes (plate, round), and notches. The plate-type specimen showed a significant decrease in hydrogen embrittlement resistance owing to its large surface-to-volume ratio, compared to the round-type specimen. It is well established that most of the hydrogen distributes over the specimen surface when it is electrochemically charged. For the round-type specimens, the notched specimen showed increased hydrogen susceptibility compared with the unnotched one. A notch causes stress concentration and thus generates lots of dislocations in the locally deformed regions during the SSRT test. The solute hydrogen weakens the interactions between these dislocations by promoting the shielding effect of stress fields, which is called hydrogen-enhanced localized plasticity mechanisms. These results provide crucial insights into the relationship between specimen geometry and hydrogen embrittlement resistance.

• Hip & pelvis
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• 제35권4호
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• pp.233-237
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• 2023

Purpose: The objective of this study was to analyze the results from a cohort of patients who underwent a revision total hip arthroplasty (THA) using a dual mobility cup (DMC) implant. Materials and Methods: A retrospective review of revised THAs was conducted using the database from a single tertiary referral hospital. A total of 91 revision THAs from 91 patients were included in the study. There were 46 male hips and 45 female hips. The mean age was 56.3±14.6 years, and the mean follow-up period was 6.4±5.9 years. In performance of revision THAs, the DMC implants were used in 18 hips (19.8%), and the conventional implants were used in 73 hips (80.2%). Results: During the follow-up period, three dislocations were identified, and the overall dislocation rate was 3.3%. Early dislocation (at one month postoperatively) occurred in one patient, while late dislocation (at a mean of 7.5 years) occurred in two patients. There was no occurrence of dislocation in the DMC group (0%), and three dislocations were detected in the conventional group (4.1%). However, no significant difference in the rate of dislocation was observed between the two groups (P=0.891). Conclusion: Although the rate of dislocation was higher in the conventional group, there were no statistically significant differences between the two groups due to the small number of patients. Nevertheless, we believe that the dual mobility design is advantageous in terms of reducing dislocation rate and can be recommended as an option for a revision THA.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.31-31
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• 2010

The growth of the high-quality GaN epilayers is of significant technological importance because of their commercializedoptoelectronic applications as high-brightness light-emitting diodes (LEDs) and laser diodes (LDs) in the visible and ultraviolet spectral range. The GaN-based heterostructural epilayers have the polar c-axis of the hexagonal structure perpendicular to the interfaces of the active layers. The Ga and N atoms in the c-GaN are alternatively stacked along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs, the stress applied along the same axis contributes topiezoelectric polarization, and thus the total polarization is determined as the sum of spontaneous and piezoelectric polarizations. The total polarization in the c-GaN heterolayers, which can generate internal fields and spatial separation of the electron and hole wave functions and consequently a decrease of efficiency and peak shift. One of the possible solutions to eliminate these undesirable effects is to grow GaN-based epilayers in nonpolar orientations. The polarization effects in the GaN are eliminated by growing the films along the nonpolar [$11\bar{2}0$] ($\alpha$-GaN) or [$1\bar{1}00$] (m-GaN) orientation. Although the use of the nonpolar epilayers in wurtzite structure clearly removes the polarization matters, however, it induces another problem related to the formation of a high density of planar defects. The large lattice mismatch between sapphiresubstrates and GaN layers leads to a high density of defects (dislocations and stacking faults). The dominant defects observed in the GaN epilayers with wurtzite structure are one-dimensional (1D) dislocations and two-dimensional (2D) stacking faults. In particular, the 1D threading dislocations in the c-GaN are generated from the film/substrate interface due to their large lattice and thermal coefficient mismatch. However, because the c-GaN epilayers were grown along the normal direction to the basal slip planes, the generation of basal stacking faults (BSFs) is localized on the c-plane and the generated BSFs did not propagate into the surface during the growth. Thus, the primary defects in the c-GaN epilayers are 1D threading dislocations. Occasionally, the particular planar defects such as prismatic stacking faults (PSFs) and inversion domain boundaries are observed. However, since the basal slip planes in the $\alpha$-GaN are parallel to the growth direction unlike c-GaN, the BSFs with lower formation energy can be easily formed along the growth direction, where the BSFs propagate straightly into the surface. Consequently, the lattice mismatch between film and substrate in $\alpha$-GaN epilayers is mainly relaxed through the formation of BSFs. These 2D planar defects are placed along only one direction in the cross-sectional view. Thus, the nonpolar $\alpha$-GaN films have different atomic arrangements along the two orthogonal directions ($[0001]_{GaN}$ and $[\bar{1}100]_{GaN}$ axes) on the $\alpha$-plane, which are expected to induce anisotropic biaxial strain. In this study, the anisotropic strain relaxation behaviors in the nonpolar $\alpha$-GaN epilayers grown on ($1\bar{1}02$) r-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVO) were investigated, and the formation mechanism of the abnormal zigzag shape PSFs was discussed using high-resolution transmission electron microscope (HRTEM).

• 전자공학회논문지A
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• 제33A권2호
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• pp.96-113
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• 1996

고농도로 붕소가 도핑된 실리콘층 내에 존재하는 부정합 전위는 웨이퍼 가장자리에서 발생됨을 알았으며, 이 층을 도핑되지 않은 영역으로 둘러쌓음으로써 부정합 전위가 억제된 고농도로 붕소가 도핑된 실리콘층을 형성할 수 있었다. 이를 이용하여 부정합 전위가 없는 고농도로 붕소가 도핑된 실리콘 멤브레인을 제작하였으며, 이 멤브레인의 표면 거칠기 및 파괴 강도 그리고 잔류 인장 응력을 각각 20$\AA$ 1.39${\times}10^{10}dyn/cm^{2}$ 그리고 2.7${\times}10^{9}dyn/cm^{2}$로 측정되었다. 반면에 부정합 전위를 포함하는 기존 멤브레인은 각각 500$\AA$ 8.27${\times}10^{9}dyn/cm^{2}$ 그리고 9.3${\times}10^{8}dyn/cm^{2}$로 측정되었으며, 두 멤브레인의 이러한 차이는 부정합 전위에서 기인함을 알았다. 측정된 두 멤브레인의 Young's 모듈러스는 1.45${\times}10^{12}dyn/cm^{2}$로 동일하게 나타났다. 또, 도핑 농도 1.3${\times}10^{12}dyn/cm^{3}$에 대한 고농도로 붕소가 도핑된 실리콘의 유효 격자 상수 및 기존 멤브레인의 평면적 격자 상수 그리고 기존 멤브레인 내의 부정합 전위의 밀도는 각각 5.424$\AA$ 5.426$\AA$ 그리고 2.3${\times}10^{4}$/cm 로 추출되었으며, 붕소가 도핑된 실리콘의 부정합 계수는 1.04${\times}10^{23}$/atom으로 추출되었다. 한편 별도의 추가적인 공정없이 일반적인 에피 성장법을 사용하여 고농도로 붕소가 도핑된 실리콘층 위에 부정합 전위가 없는 에피 실리콘을 성장시켰으며, 이 에피 실리콘의 결정성은 매우 양호한 것으로 밝혀졌다. 또 부정합 전위가 없는 에피 실리콘에 n+/p 게이트 다이오드를 제작하고 그 전압-전류 특성을 측정한 결과 5V의 역 바이어스에서 0.6nA/$cm^{2}$의 작은 누설 전류값을 나타내었다.

• Interaction and multiscale mechanics
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• 제6권3호
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• pp.301-316
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• 2013

The influence of indenter geometry on nanoindentation was studied using a static molecular dynamics simulation. Dislocation nucleation, dislocation locks, and dislocation movements during nanoindentation into Al (001) were studied. Spherical, rectangular, and Berkovich indenters were modeled to study the material behaviors and dislocation activities induced by their different shapes. We found that the elastic responses for the three cases agreed well with those predicted from elastic contact theory. Complicated stress fields were generated by the rectangular and Berkovich indenters, leading to a few uncommon nucleation and dislocation processes. The calculated mean critical resolved shear stresses for the Berkovich and rectangular indenters were lower than the theoretical strength. In the Berkovich indenter case, an amorphous region was observed directly below the indenter tip. In the rectangular indenter case, we observed that some dislocation loops nucleated on the plane. Furthermore, a prismatic loop originating from inside the material glided upward to create a mesa on the indenting surface. We observed an unusual softening phenomenon in the rectangular indenter case and proposed that heterogeneously nucleating dislocations are responsible for this.

• 대한기계학회논문집A
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• 제29권2호
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• pp.214-219
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• 2005

To investigate the change of internal stress and mobile dislocation density in the creep, stress relaxation test was examined from each strain range. Mobile dislocation density increased until it reached minimum creep rate but after that, it decreased. Internal stress did not change until it reached minimum creep rate but after that, it decreased. The stress relaxation rate is fast and approached zero later 1.5 seconds, which were begun in the stress relaxation. When the applied stress is large, the internal stress is large. It is cleared that dislocations glide viscously which N passes by cutting Cr atom rather than typical viscosity movement by the evaluation of mobility of dislocation in STS310J1TB.

• 한국레이저가공학회지
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• 제1권1호
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• pp.18-23
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• 1998

A Study on microstructural changes of sensitized Alloy 600 which was rapidly solidified by a $CO_2$ laser beam was conducted using microscopic equipments such as SEM and TEM. Dissolution of Cr-rich carbides and resultant Cr recovery on the grain boundaries occurred in the heat affected zone (HZA). The microstructure of the laser melted zone (LMZ) having epitaxially solidified from the HAZ was mainly celluar-dendritic with the 〈100〉 crystallographic direction of growth. The Cr concentration was observed to increase along the cell bondaries, and tiny particles were distributed along the cell walls with tangled dislocations around them. Cr-rich carbides had been completely melted by the high density of a laser beam, and were not re-precipitated during the matrix solidification due to a fast cooling rate in the LMZ.

• 한국소음진동공학회:학술대회논문집
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• 한국소음진동공학회 2007년도 추계학술대회논문집
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• pp.997-1004
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• 2007

A hybrid technique that combines the advantages of binaural reproduction and sound field reproduction technique is proposed. The concept of HRTF-field, which is defined as the set of HRTFs corresponding to the various head dislocations, enables us to realize virtual source imaging over a wide area. Conventional $2{\times}2$ definition is redefined as a MIMO system composed of multiple control sources and multiple head locations, and HRTF variations corresponding to various head movement are quantified. Through the direct control of HRTF-field, reproduction error induced by head dislocation can be minimized in least-square-error sense, and consequential disturbances on the virtual source image can be reduced within a selected area. Simple lateralization examples are investigated, and the reproduction error of the proposed technique is compared to that of Higher-order Ambisonics.