• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.176-176
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• 2007

Flat-panel direct conversion detectors used in compound substance of semiconductor are being studied for digital x-ray imaging. Recently, such detectors are deposited by physical vapor deposition(PVD) generally. But, most of materials (HgI2, PbI2, TlBr, PbO) deposited by PVD have shown difficult fabrication and instability for large area x-ray imaging. Consequently, in this paper, we propose applicable potentialities for screen printing method that is coated on a substrate easily. It is compared to electrical properties among semiconductors such as $HgI_2$, $PbI_2$, PbO, HgBrI, InI, and $TlPbI_3$ under investigation for direct conversion detectors. Each film detector consists of an ~25 to $35\;{\mu}m$ thick layer of semiconductor and was coated onto the substrate. Substrates of $2cm{\times}2cm$ have been used to evaluate performance of semiconductor radiation detectors. Dark current, sensitivity and physics properties were measured. Leakage current of $HgI_2$ as low as $9pA/mm^2$ at the operation bias voltage of ${\sim}1V/{\mu}m$ was observed. Such a value is not better than PVD process, but it is easy to be fabricated in high quality for large area x-ray Imaging. Our future efforts will concentrate on optimization of growth of film thickness that is coated onto a-Si TFT array.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.13.1-13.1
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• 2009

Transparent electronics has attracted many interests, for it can open new applications for consumer electronics, transportation, business, and military. Among them, display backplane, thin film transistor (TFT) array would be the most attractive application. Many researchers have been investigating oxide semiconductors for transparent channel material of TFT since the report for transparent amorphous oxide semiconductor (TAOS) TFT by Hosono group and ZnO TFT by Wager group. Especially, oxide TFTs have been intensively investigated during a couple of years since the first demonstration of ZnO-TFT driving AM-OLED. Many papers regarding the fabrication and performance of oxide TFTs, and active matrix display driven by oxide TFTs have been reported. Now lots of people have confidence in the competitiveness of oxide TFTs for the backplane of AM-Display. Especially, high mobility, uniformity, fairly good stability, and low cost process make oxide TFTs applied even to a large size AM-OLED. Last year, Samsung mobile display, former SID, reported 12" AM-OLED driven by IZGO-TFT and it seems that the remained issue for the mass production is the bias temperature stability. Here, we will introduce the application of oxide TFT and important issue for oxide TFT to be used for the direct printing.

• (The)Study of the Eastern Classic
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• no.68
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• pp.99-144
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• 2017

This paper focused on the narrative and theme of which is one of the different versions of when published in 1910's as a modern printing. Generally researchers regarded different version as a means of research for finding best version. But this paper aimed at the characteristics of different version . This version kept in mind for play(drama), so we could easily find the purpose of change for scenario. 'Yeon-jeong' in is 연정(演訂) in Korean words in Chinese characters. It is sure that this word means that the text considered play(drama). The narrative of also told us that this old novel aimed at the stage. Tendencies are classified four features, first, abundant situation description, second, frequent direct conversation, third, concrete description about direct conversation, fourth, showing poem and appeal for audience. The theme of has an interesting differences in comparison to the group of best version. When main character awakened, this novel showed the most important message. In the group of best version, he awakened to the cloud that he couldn't distinguish anything. But in this novel, cloud didn't appear, in other words, didn't change the scene. Instead, main character realize himself that he changed from Yang-so-yoo to Seong-jin. It is probable that change of process to conclusion aroused reader and audience's sympathy. To sum up, we could know that this novel kept in mind for play(drama).

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.344-344
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• 2014

Transparent amorphous oxide semiconductors such as a In-Ga-Zn-O (a-IGZO) have advantages for large area electronic devices; e.g., uniform deposition at a large area, optical transparency, a smooth surface, and large electron mobility >10 cm2/Vs, which is more than an order of magnitude larger than that of hydrogen amorphous silicon (a-Si;H).1) Thin film transistors (TFTs) that employ amorphous oxide semiconductors such as ZnO, In-Ga-Zn-O, or Hf-In-Zn-O (HIZO) are currently subject of intensive study owing to their high potential for application in flat panel displays. The device fabrication process involves a series of thin film deposition and photolithographic patterning steps. In order to minimize contamination, the substrates usually undergo a cleaning procedure using deionized water, before and after the growth of thin films by sputtering methods. The devices structure were fabricated top-contact gate TFTs using the a-IGZO films on the plastic substrates. The channel width and length were 80 and 20 um, respectively. The source and drain electrode regions were defined by photolithography and wet etching process. The electrodes consisting of Ti(15 nm)/Al(120 nm)/Ti(15nm) trilayers were deposited by direct current sputtering. The 30 nm thickness active IGZO layer deposited by rf magnetron sputtering at room temperature. The deposition condition is as follows: a rf power 200 W, a pressure of 5 mtorr, 10% of oxygen [O2/(O2+Ar)=0.1], and room temperature. A 9-nm-thick Al2O3 layer was formed as a first, third gate insulator by ALD deposition. A 290-nm-thick SS6908 organic dielectrics formed as second gate insulator by spin-coating. The schematic structure of the IGZO TFT is top gate contact geometry device structure for typical TFTs fabricated in this study. Drain current (IDS) versus drain-source voltage (VDS) output characteristics curve of a IGZO TFTs fabricated using the 3-layer gate insulator on a plastic substrate and log(IDS)-gate voltage (VG) characteristics for typical IGZO TFTs. The TFTs device has a channel width (W) of $80{\mu}m$ and a channel length (L) of $20{\mu}m$. The IDS-VDS curves showed well-defined transistor characteristics with saturation effects at VG>-10 V and VDS>-20 V for the inkjet printing IGZO device. The carrier charge mobility was determined to be 15.18 cm^2 V-1s-1 with FET threshold voltage of -3 V and on/off current ratio 10^9.

• Cartoon and Animation Studies
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• s.46
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• pp.207-231
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• 2017

Printmaking is a field of fine arts and is placed on a vague boundary that is perceived as a commercial product with a popular character due to the speciality of editions. Advances of modern science and technology has developed a new technique of printmaking, and the fusion of printmaking and computer has shown the possibility of reproduction art. Reproduction printmaking has been heavily influenced by photography and extended areas, and the various forms of printing have brought about many changes and attempts by stimulating the possibilities of indirect art at various angles. As the history of printmaking and technology closely relate, the development of computer makes widespread expansion of plural artistry, technological and artistic change. A new conceptual shape can be created on the copied image simply by placing the material of the print on the smoothly flat surface expressed in digital form. The process and the result of such work show the area of unique work which is different from the value of the $\grave{a}$ la carte art or the characteristics of the material given by the print. The deprecated perception of reproducibility evaluated the value of the work in a direct sense of printmaking. It is undeniable that it is devalued by a bundle of works regardless of the value of each edition. However, the physical properties of the prints on the paper are brought up with hand drawings drawn on the canvas by hand. And it becomes an opportunity to show new aspect and change through the process of combining digital print information on paper. The diversity of media is sometimes a controversy of identity between art and technology. In the future, it should be discussed how the limit of the media which can be enjoyed in the field of art can be set as a standard.

• The Journal of the Korea Contents Association
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• v.20 no.8
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• pp.162-175
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• 2020

The purpose of this study is to deal with practical investigation, which blends symbolism on spatio-temporal level-especially typography in three-dimensional environment-and the symbolism of written language in the context of visual communication. Up until now, typography research and education have mainly been centered on two-dimensional environment and printing technology, such as the paper. However, this study is the result of this researcher's direct design and implementation of projects on typography aside from paper. Accordingly, this study is to provide an opportunity to raise the level of reason and expression used in visual communication to a new level and to expand its scope. To ensure the efficient progress of the project, this study was to identify the structure, system, and process of communication first. Furthermore, this study was to investigate two-dimensional and three-dimensional typography as the backbone of visual communication. In addition, several representative 3D typography works are analyzed in context and used as the conceptual framework of the project conducted for this study. Based on these results, this research verifies and suggests the possibility practically and objectively by creating the project series entitled Rhetorical Space in 3D typography. In addition, this research gives an opportunity to visualize ideas aimed at the development of character-based visual language and visual communication design in the realm of the more spatial, physical, and three-dimensional public environment.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.490.2-490.2
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• 2014

Since the general solar cells accept sun light at the front side, excluding the electrode area, electrons move from the emitter to the front electrode and start to collect at the grid edge. Thus the edge of gridline can be important for electrical properties of screen-printed silicon solar cells. In this study, the improvement of electrical properties in screen-printed crystalline silicon solar cells by contact treatment of grid edge was investigated. The samples with $60{\Omega}/{\square}$ and $70{\Omega}/{\square}$ emitter were prepared. After front side of samples was deposited by SiNx commercial Ag paste and Al paste were printed at front side and rear side respectively. Each sample was co-fired between $670^{\circ}C$ and $780^{\circ}C$ in the rapid thermal processing (RTP). After the firing process, the cells were dipped in 2.5% hydrofluoric acid (HF) at room temperature for various times under 60 seconds and then rinsed in deionized water. (This is called "contact treatment") After dipping in HF for a certain period, the samples from each firing condition were compared by measurement. Cell performances were measured by Suns-Voc, solar simulator, the transfer length method and a field emission scanning electron microscope. According to HF treatment, once the thin glass layer at the grid edge was etched, the current transport was changed from tunneling via Ag colloids in the glass layer to direct transport via Ag colloids between the Ag bulk and the emitter. Thus, the transfer length as well as the specific contact resistance decreased. For more details a model of the current path was proposed to explain the effect of HF treatment at the edge of the Ag grid. It is expected that HF treatment may help to improve the contact of high sheet-resistance emitter as well as the contact of a high specific contact resistance.