• Journal of the Microelectronics and Packaging Society
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• v.25 no.2
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• pp.35-39
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• 2018

In order to improve the coupling efficiency, a collimator lens that collects the light emitted from the laser diode at a wide angle to the core of the optical fiber is essential. Glass mold method using a mold is widely used as a collimator lens currently used. Although this method is inexpensive to produce, it is difficult to form precisely and quality problems such as spherical aberration. In this study, the precision of surface processing was improved by replacing the existing glass mold method with the semiconductor process, and the material of the lens was changed to silicon suitable for the semiconductor process. The semiconductor process consists of a photolithography process using PR and a dry etching process using plasma. The optical coupling efficiency was measured using an ultra-precision alignment system for the evaluation of the optical characteristics of the silicon lens. As a result, the optical coupling efficiency was 50% when the lens diameter was $220{\mu}m$, and the optical coupling property was 5% or less with respect to the maximum optical coupling efficiency in the lens diameter range of $210-240{\mu}m$.

• Journal of Korean Ophthalmic Optics Society
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• v.4 no.2
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• pp.45-49
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• 1999

The second harmonic, wavelength is 397nm, of the continuous wave diode laser, whose maximum power is 35mW, was generated in $LiIO_3$ crystals in a ring enhancement cavity. 5mm- and 10mm-long crystals cut $43.21^{\circ}$ for optic axis were used in this experiment. Both surfaces of those were anti-reflection coated for 794nm. In case the crystal was inserted into the cavity, the condition of separation between two concave mirrors for the optimum mode matching was found. The conversion efficiency of second harmonic generation was increased by the resonant enhancement of pumping power in the ring enhancement cavity, and the frequency of diode laser was locked to that of the counter-propagation mode generated from the surface of crystal. When the pumping power was 28 mW, the infrared buildup factor was about 45 without the crystal, and 14 with the crystal due to the transmission loss of crystal. The maximum second harmonic powers of $1.5{\mu}W$ and $6.6{\mu}W$ were obtained, and corresponding conversion efficiencies were $(6.584{\pm}0.56){\times}10^{-3}$%, $2.6{\pm}0.21){\times}10%{-2}$% in 5mm- and 10mm-long $LiIO_3$, respectively.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.3 s.333
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• pp.25-34
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• 2005

In this paper, we analyzed and measured the electrical crosstalk characteristics of a triplex transceiver module for ethernet Passive optical networks(EPONS). And we improved the electrical crosstalk levels using Dummy ground lines with signal lines. The triplex transceiver module consists of a laser diode as a transmitter, a digital photodetector as a digital data receiver, and a analog photodetector as a community antenna television signal receiver. And there are integrated on silicon substrate. The digital receiver and analog receiver sensitivity have to meet -24 dBm at $BER=10^{-l2}$ and -7.7 dBm at 44 dB SNR. And the electrical crosstalk levels have to maintain less than -86 dB from DC to 3 GHz. From analysis and measurement results, the proposed silicon substrate structure that contains the Dummy ground line with $100\;{\mu}m$ space from signal lines and separates 4 mm among devices respectively, is satisfied the electrical crosstalk level compared to simple structure. This proposed structure can be easily implemented with design convenience and greatly reduced the silicon substrate size about $50\%$.

• Korean Journal of Optics and Photonics
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• v.15 no.3
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• pp.193-199
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• 2004

We present the double resonance optical pumping(DROP) spectra in the transition 5P$_{3}$2/-4D$_{3}$2/ and 5P$_{3}$2/-4D$_{5}$ 2/ of ($^{87}$ Rb) and the frequency stabilization in the $1.5mutextrm{m}$ region using those spectra. Those spectra have high signal-to-noise ratio and narrow spectral linewidth, which is about 10 MHz. We could account fur the relative intensities of the hyperfine states of those spectra by the spontaneous emission into the other state. When the frequency of the $1.5mutextrm{m}$ laser diode was stabilized to the DROP spectrum, the frequency fluctuation was about 0.2 MHz fDr sampling time of 0.1 s and the Allan deviation(or the square root of the Allan variance) was about 1${\times}$10$^{-11}$ for averaging time of l00s.

• Progress in Medical Physics
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• v.16 no.2
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• pp.104-109
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• 2005

Photodynamic therapy (PDT) is one of the expectable current cure operation methods. Tumor tissue is treated by abundant oxygen in a body and generated singlet or free radical from exterior laser diode and photosensitizer. Current problem of PDT is the low penetration power of the light beam in a deep seated large tumor and solid tumor thus results in low treatment outcome. In the study, we tried to develop interstitial photodynamics therapy treatment to solve this problem. As the accurate determination of light dosimetry in biological tissue is one of the most important factors affecting the effectiveness of PDT, parameters used in this study are the optical property of biological tissue. Since biological tissues have large scattering coefficient to visible light the penetration depth of a biological tissue in visible light region is only $15\~20$ mm. We showed that it is possible to measure fluence rate and penetration depth within the biological tissues by Monte Carlo simulation very well. Based on the MC simulation study, the effectiveness of interstitial photodynamic therapy on tumor control in solid tumor was proved through in vivo animal experiment.

• Korean Journal of Optics and Photonics
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• v.9 no.5
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• pp.333-341
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• 1998

The novel integrated device, 1.55 ${\mu}{\textrm}{m}$ DR-LD(distrbuted reflector laser diode) integrated EA-MOD (electro-absorption modulator) as light source, is proposed to improve the device yield and its operational performances. This device can be easily fabricated by the selective MOVPE technique and its fabrication processes are almost the same as the reported 1.55 ${\mu}{\textrm}{m}$ DFB-LD(distributed feedback laser diode) integrated EA-MOD except the asymmetric gratings. The static and dynamic properties are investigated simultaneously by solving the transfer matrix method for light propagation, the time-dependent rate equation for carrier change and schr$\"{o}$dinger equation for QCSE (Quantum-Confined Stark Effect). The performances of the proposed device such as output power, chirp, and extinction ratio are compared with those of DFB-LD integrated EA-MOD. Under 10Gb/s NRZ modulation, we obtain that DR-LD integrated EA-MOD. is 30% higher in output power on the on-state, about 50% lower in chirp, and slightly larger in extinction ratio than DFB-LD integrated EA-MOD.-MOD.

• Journal of the Korean Magnetics Society
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• v.8 no.6
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• pp.380-387
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• 1998

In this paper, a sensor material with Fe/Zr multilayer thin film, in which the change in the magnetization and strain with hydrogenation is maximized, were developed. Compositionally modulated (CM) Fe/Zr multilayers with a $Fe_{80}Zr_{20}$ composition and modulation wavelengths ($\lambda$) $3~50{\AA}$ were deposited by sequentially sputtering (RF diode) elemental Fe and Zr targets. The films were electrolytically hydrogenated to select the optimum Fe/Zr multilayers that show the maximum increases in the magnetization and strain with hydrogenation. The changes in the magnetic properties of the thin films after hydrogenation, were measured using a hysteresis graph and a vibrating sample magnetometer (VSM), and the strains induced in the films by hydrogenation were also measured using a laser heterodyne interferometer (LHI). The optimum sensor material selected was incorporated in a fiber-optic hydrogen sensor (that can sense indirectly amount of hydrogen injected) by depositing it directly on the sensing arm of a single-mode fiber Michelson interferometer. The developed sensor holds significant promise for non-destructive test evaluation (NDE) applications because it is expected to be useful for detecting easily and accurately the subsurface corrosion in structural systems.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.1261-1262
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• 2008

Laser-based crystallization techniques are ideally-suited for forming high-quality crystalline Si films on active-matrix display backplanes, because the highly-localized energy deposition allows for transformation of the as-deposited a-Si without damaging high-temperature-intolerant glass and plastic substrates. However, certain significant and non-trivial attributes must be satisfied for a particular method and implementation to be considered manufacturing-worthy. The crystallization process step must yield a Si microstructure that permits fabrication of thin-film transistors with sufficient uniformity and performance for the intended application and, the realization and implementation of the method must meet specific requirements of viability, robustness and economy in order to be accepted in mass production environments. In recent years, Low Temperature Polycrystalline Silicon (LTPS) has demonstrated its advantages through successful implementation in the application spaces that include highly-integrated active-matrix liquid-crystal displays (AMLCDs), cost competitive AMLCDs, and most recently, active-matrix organic light-emitting diode displays (AMOLEDs). In the mobile display market segment, LTPS continues to gain market share, as consumers demand mobile devices with higher display performance, longer battery life and reduced form factor. LTPS-based mobile displays have clearly demonstrated significant advantages in this regard. While the benefits of LTPS for mobile phones are well recognized, other mobile electronic applications such as portable multimedia players, tablet computers, ultra-mobile personal computers and notebook computers also stand to benefit from the performance and potential cost advantages offered by LTPS. Recently, significant efforts have been made to enable robust and cost-effective LTPS backplane manufacturing for AMOLED displays. The majority of the technical focus has been placed on ensuring the formation of extremely uniform poly-Si films. Although current commercially available AMOLED displays are aimed primarily at mobile applications, it is expected that continued development of the technology will soon lead to larger display sizes. Since LTPS backplanes are essentially required for AMOLED displays, LTPS manufacturing technology must be ready to scale the high degree of uniformity beyond the small and medium displays sizes. It is imperative for the manufacturers of LTPS crystallization equipment to ensure that the widespread adoption of the technology is not hindered by limitations of performance, uniformity or display size. In our presentation, we plan to present the state of the art in light sources and beam delivery systems used in high-volume manufacturing laser crystallization equipment. We will show that excimer-laser-based crystallization technologies are currently meeting the stringent requirements of AMOLED display fabrication, and are well positioned to meet the future demands for manufacturing these displays as well.

• Korean Journal of Optics and Photonics
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• v.25 no.1
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• pp.38-43
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• 2014

An external cavity laser supporting two wavelengths is demonstrated by incorporating polymer waveguide Bragg reflectors and a superluminescent light-emitting diode. An oversized rib waveguide structure and Bragg gratings are designed by using the effective-index and transmission-matrix methods. Bragg gratings with different periods are inscribed on a polymer waveguide through double-exposure laser interferometry. In order to tune the cavity loss affected by the reflectivity of Bragg gratings, a Bragg reflectors with varying length is incorporated. Two-wavelength-mode lasing is achieved for the device consisting of 2-mm long, 537-nm period gratings and 2.2-mm long, 540-nm period gratings; the lasing wavelengths are 1554 nm and 1564 nm, with an output power close to 0 dBm, a 20-dB bandwidth of 0.2 nm, and a side-mode suppression ratio of 45 dB.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.5 s.347
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• pp.68-76
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• 2006

We propose a low noise broadband light source (BLS) and investigate a cost-effective wavelength division multiplexing-passive optical network (WDM-PON) for the convergence of broadcasting and data service. The proposed BLS is used for an injection light of wavelength-locked Fabry-Perot laser diodes (F-P LD) and helps the color-free operation of dense WDM-PON (DWDM-PON). In addition, we apply this BLS to a optical source for overlay of digital broadcasting channel on the WDM-PON.