• 한국재료학회:학술대회논문집
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• 한국재료학회 1999년도 추계학술발표강연 및 논문개요집
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• pp.97-97
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• 1999

• Journal of information and communication convergence engineering
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• 제1권2호
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• pp.67-69
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• 2003

The experimental studies for the etch properties of the oxide grown on silicon substrate, which is in diluted hydrogen fluoride (HF) solution, are presented. Using different ion implantation dosages, dopants and energies, silicon substrate was implanted. The wet etching in diluted HF solution is used as a mean of wafer cleaning at various steps of VLSI processing. It is shown that the wet etch rate of oxide grown on various implanted silicon substrates is a strong function of ion implantation dopants, dosages and energies. This phenomenon has never been reported before. This paper shows that the difference of wet etch rate of oxide by ion implantation conditions is attributed to the kinds and volumes of dopants which was diffused out into $SiO_2$ from implanted silicon during thermal oxidation.

• 한국표면공학회지
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• 제28권3호
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• pp.182-191
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• 1995

A highly porous silicon layer was fabricated by anodizing single crystalline silicon in a dilute solution of hydrofluoric acid. The color of the porous silicon changed from red and blue to yellow gold during the anodizing process. The current-voltage (I-V) curve of the anodizing process showed a typical Schottky diode rectification form. The cell voltage decreased with the increase of HF concentration in the solution at high current range. However, the voltage was independent on HF concentration in the solution at low current range. The pore size was dependant on anodizing condition (HF concentration, current and anodizing time). The pore size and wall width of porous silicon layer were 4~6 and 1~3 nm, respectively. Surface of the porous silicon was covered with silicon compound ($SiH_x$etc.) according to IR spectrum analysis. The peak wavelength and width of photoluminescence (PL) spectrum of porous silicon were 650~850 nm (1.5~1.9 eV) and 250 nm, respectively. The photoluminescence intensity and peak wavelength, and porosity of porous silicon increased with increasing anodizing current and decreased with increasing HF concentration in the anodizing solution.

• 한국전기전자재료학회논문지
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• 제14권2호
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• pp.117-122
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• 2001

In this paper, we report on photoelectrochemical etching process of 6H-SiC semiconductor wafer. The etching was performed in two-step process; anodization of SiC surface to form a deep porous layer and thermal oxidation followed by an HF dip. Etch rate of about 615${\AA}$/min was obtained during the anodization using a dilute HF(1.4wt% in H$_2$O) electrolyte with the etching potential of 3.0V. The etching rate was increased with the bias voltage. It was also found out that the adition of appropriate portion of H$_2$O$_2$ into the HF solution improves the etching rate. The etching process resulted in a higherly anisotropic etching characteristics and showed to have a potential for the fabrication of SiC devices with a novel design.

• 한국세라믹학회지
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• 제39권3호
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• pp.315-320
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• 2002

저농도로 희석된 HF 수용액(6 wt%)을 사용하여 $Al(OH)_3$의 표면을 F/Al의 몰비 0.15에서 처리하고, 처리 전후 표면특성을 관찰하였다. 반응계의 온도 및 pH 변화로부터 $Al(OH)_3$에 대한 HF의 표면반응은 HF와 접촉한 $Al(OH)_3$ 표면부에서 metastable한 ${\alpha}$형의 불화알루미늄$({\alpha}-AlF_3{\cdot}3H_2O)$이 안정한 ${\beta}$형의 불화알루미늄$({\beta}-AlF_3{\cdot}3H_2O)$으로 전이되는 과정으로 진행되며, 다량의 발열을 수반하면서 반응계의 온도상승을 유발하였다. 이러한 ${\beta}-AlF_3{\cdot}3H_2O$의 생성은 표면처리된 분말의 FT-IR 및 X-선 회절분석결과를 통해 확인되었다. ${\beta}-AlF_3{\cdot}3H_2O$의 morphology와 분포상태를 SEM을 통해 관찰한 결과 $Al(OH)_3$ 표면에 $1{\mu}m$ 이하의 미세분말 형태로 피복층을 형성하며 균일하게 분포된 것으로 확인되었다. HF로 처리된 시료의 표면 백색도는 미처리에 비해 약 6.6% 증가되었으며, 이는 $Al(OH)_3$보다 높은 백색도를 지닌 ${\beta}-AlF_3{\cdot}3H_2O$ 피복 효과 때문인 것으로 나타났다.

• The Korean Journal of Ceramics
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• 제4권1호
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• pp.28-32
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• 1998

This paper reports on photoluminescence (PL), luminescence decay curves, and compositional analysis of porous silicon(PS) which is aged under air ambient by Fourier transform infrared vibrational spectroscopy (FTIR) and by Auger electron spectroscopy (AES). Porous silicos which has been aged under air ambient yields two PL band structures, i.e. blue/violet PL and red PL. The evolution of a blue/violet band is pronounced, especially for thin PS film which is prepared in dilute HF solution. The blue/violet PL band has been observed initially to increrase rapidly with aging, then saturated with further atmospheric aging. The ambient air aged PS exhibits a fast decay time of sub-nanosecond at room temperature and shows appreciably faster decay time than that at 20K. Atmospheric aging of this thin blue/violet luminescing PS yield non-stoichiometric oxide judging from the vibrational spectra of Si-O and AES analysis.