• Journal of Advanced Marine Engineering and Technology
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• 제13권2호
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• pp.64-77
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• 1989

In this study, the experiments were carried out for the purpose of establishment of aluminium cementation to steel surface by diffusible heat treatment after making the coated film onto the substrate by arc spray method. Also, the microstructure and mechanical properties of the cementation layer produced by this study were inspected for various heat treatment and spraying conditions. Main results obtained are as follow ; 1. The coating film characteristics which have excellent errosion-resistance, high temperature oxidation-resistance are obtained by aluminium penetration heat treatment after making the sprayed aluminum coating film onto the steel substrate. 2. Aluminium diffusion penetration takes place at higher temperature than 660.deg.C, and the more heat treatment time and the higher heat treatment temperature adopted, the deeper diffusion layer obtained. 3. Insert gas arc spraying using argon gas as the carrier gas higher improvement of mechanical property than that of compressed air environment. 4. The coating film characteristics appeared to be improvement of adhesive property, porosity plugging effect by heat treatment in air environment.

• 전자공학회논문지A
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• 제30A권7호
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• pp.47-59
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• 1993

16M DRAM 용 Al/Si contact 의 열적안정성을 개선하기 위하여 "stuffed" TiN/Ti diffusion barrier를 사용하였다. Diffusion barrier 로서의 특성을 개선하기 위한 Al 증착전 TiN/Ti barrier metal의 열처리 과정중 barrier metal의 두께, 열처리온도, 분위기 등을 변화시켰다. 질소분위기하에서 450도에서 TiN(900A)/Ti(300A) 박막을 열처리 하여 "stuffed" barrier metal을 형성 시켰을 경우 Al 원자의 TiN층으로의 확산의 600도에서 후속열처리한 경우 일어났으나, 700도까지도 Al-spike를 관찰할 수 없었다. 그러나 "stuffed" barrier metal을 550도에서 형성한 경우에는 600도의 후속열처리온도에서 Al이 Si 기판으로 침투했음을 관찰하였다. 박막의 두께를 얇게한 경우, 600도의 후속 열처리에서 Al-spike가 형성되었음을 확인하였다.

• 열처리공학회지
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• 제17권3호
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• pp.180-188
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• 2004

• 열처리공학회지
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• 제1권1호
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• pp.1-7
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• 1988

In this study the improvement of mechanical properties of ion-nitrided SACM-1 steel was investigated by analysing microstructural developments and hardness increase in the nitrided surface layer. Specimens were quenched at $570^{\circ}C$, which is lower than the eutectoid temperature ($590^{\circ}C$) of Fe-N binary system after nitrided at temperature of $460-570^{\circ}C$ for 2-8 hours under constant pressure of 8 torr. The depths of diffusion and compound layers were appeared to proportional to the root mean square time of nitriding. And the hardness showed the maximun value Hv = 1200 for the specimen nitrided at $530^{\circ}C$. Hardness distribution of the. ion-nitrided steels were increased by diffusion treatment below the eutectoid temperature of the Fe-N binary system. A prolonged heat treatment below the eutectoid temperature was attributed to the increase in the depth of diffusion layer at the expense of the decrease in surface hardness of the ion nitreded steel.

• Journal of the Korean Wood Science and Technology
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• 제19권4호
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• pp.7-17
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• 1991

The feasibility of treating three softwood(Japanese larch pitch pine, and Korean pine) thinned logs by double-diffusion treatment processes was investigated. Some posts were incised before immersion, and others were imersed in hot copper sulfate solution. Comparison among species indicated that. in general, pitch pine was most treatable and Japanese larch least treatable. For all three species, almost all treatment schedules gave consistently good penetration and high net retention, but very steep gradient of preservative distribution. As expected, the treatability was increased by the extension of immersion time, increased concentration of treating solution, incising. and heating of the first solution. Of the variables tested, it appears that heating of the first solution is the most important. From the data in this paper, it may be concluded that, if the first solution is not heated, the best schedule is #3. If the first solution is healed. it appears the best schedules are #10 or #11. Since heating of the first solution improves the treatability. schedules # 10 or :#11 are recommended if the cost of heating might be justified. The data presented in this paper indicate that double-diffusion treatment processes seem to offer a promise as a comparatively effective and easy-operating method of treating thinned logs for the small-scale production of treated stock.

• 한국전기전자재료학회논문지
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• 제33권4호
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• pp.263-270
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• 2020

In this study, the physical mechanism and diffusion effects in aluminium implanted silicon was investigated. For fabricating power semiconductor devices, an aluminum implantation can be used as an emitter and a long drift region in a power diode, transistor, and thyristor. Thermal treatment with O₂ gas exhibited to a remarkably deeper profile than inert gas with N₂ in the depth of junction structure. The redistribution of aluminum implanted through via thermal annealing exhibited oxidation-enhanced diffusion in comparison with inert gas atmosphere. To investigate doping distribution for implantation and diffusion experiments, spreading resistance and secondary ion mass spectrometer tools were used for the measurements. For the deep-junction structure of these experiments, aluminum implantation and diffusion exhibited a junction depth around 20 ㎛ for the fabrication of power silicon devices.

• 대한기계학회논문집A
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• 제39권12호
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• pp.1221-1227
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• 2015

미세유로채널 타입의 열교환기 제작에 필요한 과정 중 하나인 확산접합(Diffusion Bonding)에 대하여 연구를 수행하였다. 시험에 사된 재료는 Alloy 800HT, Alloy 690, 그리고 Alloy 600 으로 다양한 온도에서 확산접합을 수행하고 상온에서 $650^{\circ}C$ 까지 인장특성을 평가하였다. Alloy 800H 의 경우 든 온도에서 확산접합부의 연신율이 크게 저하되었다. Alloy 690 과 Alloy 600 의 경우 $500^{\circ}C$ 까지는 확산접합부도 높은 연신율을 보이나 $550^{\circ}C$ 이상에서는 연신율이 재에 비해 감소하였다. 이는 확산접합부에서의 불분한 결정립계 이동과 석출상에 의한 것으로 판단된다. 확산접합부의 인장 특성을 향상시키기 위해 후열처리를 수행한 경우 든 재료에 대해 $550^{\circ}C$ 까지 재 수준으로 연신율이 회복되었다. 이러한 확산접합부의 인장특성의 변화와 미세조직간의 연관성에 대해 토의하였다.

• 열처리공학회지
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• 제14권5호
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• pp.282-285
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• 2001

Based on the mass balance of anion and cation fluxes, the parabolic rate constant ($K_p$) of oxide grown during the high-temperature oxidation of metal is theoretically calculated. It is assumed that the diffusion of oxygen anion and metal cation through oxide scale obeys the Fick's 1st law, the growth of oxide is controlled by the diffusion of ions, electrical potential gradient as driving force for diffusion of ions is ignored, and oxidation occurs within an existing oxide layer. Then, the parabolic rate constant can be expressed by $K_p=[2{\rho}_{MmOn}{M^2}_{MmOn}(mD_oC_o{^e}+nD_MC_M{^e})/nm]$.

• 열처리공학회지
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• 제11권1호
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• pp.17-26
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• 1998

Cladding of stainless steel on mild steel was prepared by diffusion bonding process. The bond strength increased with an increase of bonding temperature and time. It was also found that the bond strength increased as the surface roughness decreased. After the diffusion bonding of stainless steel-mild steel, the mild steel part near the bonded interface showed higher strength than the base steel due to the migration of chromium and nickel from stainless steel to mild steel. Carbon migration from mild steel gave effect on the formation of chromium carbides at grain boundaries of stainless steel, the fractograpohic features of the imperfectly bonded interface showed rather coarse dimples in the mild steel part and very fine dimples in the stainless steel part.

• 열처리공학회지
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• 제34권2호
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• pp.75-80
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• 2021

The crystal grains of polycrystalline diamond vary depending on deposition conditions and growth thickness. The diamond thin film deposited by the CVD method has a very rough growth surface. On average, the surface roughness of a diamond thin film deposited by CVD is in the range of 1-100 um. However, the high surface roughness of diamond is unsuitable for application in industrial applications, so the surface roughness must be lowered. As the surface roughness decreases, the scattering of incident light is reduced, the heat conduction is improved, the mechanical surface friction coefficient can be lowered, and the transmittance can also be improved. In addition, diamond-coated cutting tools have the advantage of enabling ultra-precise machining. In this study, the surface roughness of diamond was improved by thermal diffusion reaction between diamond carbon atoms and ferrous metals at high temperature for diamond thin films deposited by MPCVD.