• 대한금속재료학회지
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• 제48권11호
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• pp.995-1002
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• 2010

This study investigated the effect of process temperature on the alloying process during synthesis of $Sm_2Fe_{17}$ powder from ball-milled samarium oxide ($Sm_2O_3$) powders and a solid reducing agent of calcium hydrides ($CaH_2$) using iron nanopowder (n-Fe powder) by a reduction-diffusion (R-D) process. The $n-Fe-Sm_2O_3-CaH_2$ mixed powders were subjected to heat treatment at $850{\sim}1100^{\circ}C$ in $Ar-H_2$ for 5 h. It was found that the iron nanopowders in the mixed powders are sintered below $850^{\circ}C$ during the R-D process and the $SmH_2$ is synthesized by a reduced Sm that combines with $H_2$ around $850^{\circ}C$. The results showed that $SmH_2$ is able to separate Sm and $H_2$ respectively depending on an increase in process temperature, and the formed $Sm_2Fe_{17}$ phase on the surface of the sintered Fe nanopowder agglomerated at temperatures of $950{\sim}1100^{\circ}C$ in this study. The formation of the $Sm_2Fe_{17}$ layer is mainly due to the diffusion reaction of Sm atoms into the sintered Fe nanopowder, which agglomerates above $950^{\circ}C$. We concluded that nanoscale $Sm_2Fe_{17}$ powder can be synthesized by controlling the diffusion depth using well-dispersed Fe nanopowders.

• 한국지반공학회논문집
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• 제22권5호
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• pp.5-12
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• 2006

본 연구에서는 점토질 지반의 강도를 증진시키기 위해, 일련의 동전기 현상을 이용한 주입 실험을 수행하였다. 이를 위해 실내 Bench scale 실험을 실시하여 적용성을 파악하였다. 또한 확산의 영향에 의한 지반개량효과를 파악하기 위해 실험 종료 후 5일 간격으로 25일 동안 데인 실험을 실시하여 강도증진효과를 파악하였으며, 처리기간에 따른 영향을 고려하기 위해 5일 간격(5, 10, 15, 20, 25)으로 처리기간을 설정한 후 동전기 주입 실험을 실시하였다. 주입제 종류에 따른 실험결과, 초기 강도치와 비교하여 약 $2\sim7$배 정도의 강도증진효과가 발생하였으며, 특히 양극에 규산나트륨을 주입하고 음극에 인산을 주입한 경우 약 7배 정도의 강도증진효과가 발생하였다. 또한 확산과 함수비 감소에 따른 강도값을 분석해본 결과 시간경과에 따라 강도 값이 일정한 값으로 수렴하는 양상을 띠었으며, 함수비 감소에 의한 강도 증가치 보다 동전기 주입과 확산에 의한 영향으로 발생되는 강도증가치가 약 $700\sim1000%$ 높게 나타났다. 처리기간에 따른 실험결과, 처리기간이 증가함에 따라 동전기 주입에 의한 강도증진효과가 크게 나타났으며, 함수비 감소에 의한 강도증가치보다 대략 $3\sim4$배 정도 높게 나타남을 파악할 수 있었다.

• 한국진공학회지
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• 제18권3호
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• pp.203-207
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• 2009

반도체 공정에서 기존 금속배선으로 사용되던 Al을 대체하여 사용되는 금속배선으로는 Cu가 그 대안으로 인식되고 있다. 이는 비저항값이 Al ($2.66{\mu}{\Omega}$-cm)보다 Cu ($1.67{\mu}{\Omega}$-cm)가 더 작아 RC 지연 시간 (RC delay time)을 극복하기 때문이다. 그러나 Cu의 녹는점은 $1085^{\circ}C$로 높지만 저온에서 쉽게 Si기판과 반응하는 특성을 가지고 있고, 또한 Si과의 접착력이 좋이 않는 것으로 알려져 있다. 이러한 이유로 Cu와 Si과의 반응을 방지하고 접착력을 높이기 위하여 확산방지막의 연구가 꾸준히 진행되고 있다. 본 연구그룹에서는 Cu의 확산을 방지하기 위하여 W-C-N의 확산방지막에 대하여 연구하여 왔다. 지금까지 보고된 연구 결과에 의하면 W-C-N (tungsten-carbon-nitrogen) 확산방지막은 고온에서도 Cu와 Si과의 확산을 효과적으로 방지하는 것으로 보고되었다. 이 논문에서는 W-C-N 확산방지막에 질소(N) 비율을 다르게 증착하여 지금까지 진행한 연구 결과를 기반으로 새로이 Cu의 전자거동현상(Electromigration)에 대하여 연구하였고, 고온 열처리 과정에서 박막의 표면강도 (Surface hardness)를 Nano-Indenter system을 이용하여 연구하였다. 이러한 연구를 통하여 박막내 질소가 포함된 W-C-N 확산방지막이 Cu의 전자거동에 더 안정적이며, 고온 열처리 과정에서도 표면 강도가 더 안정한 연구 결과를 획득하였다.

• 한국표면공학회지
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• 제50권3호
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• pp.170-176
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• 2017

EPIG (Electroless Pd/immersion Au) process was studied to replace ENIG (electroless Ni/immersion Au) and ENEPIG (electroless Ni/electroless Pd/immersion Au) processes for bump surface treatment used in high reliable flip chip packages. The palladium and gold layers formed by EPIG process were uniform with thickness of 125 nm and 34.5 nm, respectively. EPAG (Electroless Pd/autocatalytic Au) also produced even layers of palladium and gold with the thickness of 115 nm and 100 nm. TEM results exhibited that the gold layer in EPIG surface had crystalline structure while the palladium layer was amorphous one. After annealing at 250 nm, XPS analysis indicated that the palladium layer with thickness more than 22~33 nm could act as a diffusion barrier of copper interconnects. As a result of comparing the chip shear strength obtained from ENIG and EPIG surfaces, it was confirmed that the bonding strength was similar each other as 12.337 kg and 12.330 kg, respectively.

• 한국작물학회지
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• 제44권3호
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• pp.282-287
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• 1999

The object of this study was to determine the difference of the time course changes of transpiration, diffusion resistance and photosynthetic rate of rice at several different growth stages subjected to soil moisture stress (SMS) and recovery by irrigation. A japonica rice cultivar 'Dongjinbyeo', was grown under flooded condition in a plastic container filled with silty loam soil. At 5 main growth stages, the container was treated by SMS until initial wilting point (IWP) and then reirrigated. The duration of SMS until IWP were the longest, 13 days for tillering stage, and the shortest, 7 days for panicle initiation and meiosis stage. The transpiration rate rapidly decreased during SMS and the transpiration rate at IWP of the stressed plant showed 10∼20% compared with control, and the transpiration rate of stressed plant at most growth stages also recovered rapidly after irrigation and then reached 100% of control within a week. The shoot photosynthetic rate in all growth stages rapidly decreased by SMS, and the rates at IWP of stressed plants were de-creased nearly to 0%, beside the treatment at tillering stage. The recovery degree of photosynthetic rate by irrigation ranged from 20 to 90%, showed higher at early growth stages of SMS treatment than that of later stages. At all growth stages the leaf diffusion resistance of stressed plants was over 3 times that of the control resulting from a rapid increase at 3 to 5 days after draining for SMS, and showed quick recovery by irrigation within 3 days after drainage. The above physiological parameters changed in close relation with the decrease of the soil matric potential after SMS. These results indicate that at all main growth stages of rice plants the transpiration and photosynthesis reduction by stomatal closure reponded sensitively to the first stage of SMS closely related with decrease of soil water potential, while those recovery pattern and recovered degree by irrigation are little different by growth stage of rice.

• 대한치과기공학회지
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• 제27권1호
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• pp.97-104
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• 2005

The effect of Nb on interfacial bonding characteristics of Ni-Cr alloy for porcelain fused to metal crown (PFM) has been studied in order to investigate oxide layer. A specimens, which is 0.8mm in thickness, were fired at 1,000$^{\circ}C$ with four tests such as air, vacuum, air for 5 minutes and vacuum for 5 minutes in order to examine an oxide behavior of alloy surface generated by the adding of Nb to be controlled at a rate of 0, 1, 3 and 5. It observed oxide film form of the fired specimens with optical microscope and scanning electron microscope (SEM), and chemical formation of them with energy disperse X-ray spectroscopy (EDX). The other specimens, which is 2mm in thickness, were fired at 1,000$^{\circ}C$ with air and vacuum in order to analyze the diffusion behaviors of alloy-porcelain interface by X-ray dot mapping. The results of this study were as follows: 1. The observation of microstructure of specimens by SEM showed that the more Nb content is high, the more much intermediate compound of rich Nb is observed. 2. The surface morphology of oxide film is most dense in 3% Nb. The heat treatment in air constitutes denser oxide film than heat treatment under vacuum. 3. The diffusion behavior of oxide layer by X-ray dot mapping showed that Si, Al of porcelain diffuse toward metal.

• 열처리공학회지
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• 제6권1호
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• pp.17-25
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• 1993

The Cu - $Nb_3Sn$ composites wire as a superconducting material was prepared by in situ method as follow: Cu - 15wt.% Nb alloys which were melted in a high -frequency induction furnace and casted in bar were cold-worked up to the final diameter of 0.24 mm, electroplated with Sn, pre-treated in two steps and then diffused at $550{\sim}650^{\circ}C$ for 24 ~ 96 hrs. The overall $J_c$ and $T_c$ of the specimens were measured by the four point-probe method at 10 K in the magnetic field of 0 Tesla. The overall $J_c$ of the composites wire which diffused at $550^{\circ}C$ after pre-treating in two steps were generally higher than those of the wire at either $600^{\circ}C$ or $650^{\circ}C$. For the specimens diffused at $550^{\circ}C$, the overall $J_c$ were increased until 72 hrs. of diffusion time and then decreased. However, in case of diffusion at $600^{\circ}C$ and $650^{\circ}C$, the overall $J_c$ were gradually decreased from the beginning. The maximum overall $J_c$ obtained in this experiment was $1.3{\times}10^4\;A/cm^2$, which was measured for the specimen diffused at $550^{\circ}C$ for 72 hrs. When the specimens were diffused at $550^{\circ}C$ for 72 hrs, after pre-treating, the measured critical temperature, $T_c$ was 16.19 K. Similar $T_c$ value were obtained in other specimens regardless of diffusion time and temperature.

• 열처리공학회지
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• 제13권4호
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• pp.224-230
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• 2000

Garbon steel(SM35C) was gas nitrocarburized at $580^{\circ}C$ in $55%N_2-40%NH_3-5%CO_2$ mixed gas atmosphere, and then the steel was induction hardened at $850^{\circ}C$. The microstructure of gas nitrocarburized surface layer was observed by optical microscope and SEM. The phase analysis was carried out by X-ray diffraction method. The mechanical properties of gas nitrocarburized SM35C steel was evaluated by hardness, wear and fatigue test. The thickness of compound and diffusion layer were increased with increasing the gas nitrocarburizing time and the densest compound layer was obtained at 3 hours gas nitrocarburizing time. In case of 15sec induction hardening after gas nitrocarburizing, the surface hardness was decreased from 800Hv to 630Hv owing to the decomposition of compound layer, but wear resistance was increased because of increased hardness of diffusion layer. The fatigue strength of induction hardened steel after gas nitrocarburizing, $58kgf/mm^2$, was higher than $41.5kg/mm^2$ of gas nitrocarburized steel and $45kg/mm^2$ of induction hardened steel, respectively.

• 열처리공학회지
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• 제9권1호
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• pp.69-77
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• 1996

The fatigue crack initiation behavior of plasma ion nitrided SACM645 steel was investigated through the rotary bending fatigue test and residual stress measurement by XRD. It was shown by XRD and EPMA that the plasma ion nitrided surface was composed of ${\gamma}^{\prime}(Fe_4N)$phase and ${\varepsilon}(Fe_{2-3}N)$phase, and that the nitrogen atoms existed in Fe matrix in diffusion layer. The OM, SEM and Auger spectroscopy showed that the depth of compound layer, mixed compound and diffusion layer, and diffusion layer was $8{\mu}m$, $30{\mu}m$ and $300{\mu}m$, respectively. However, the microhardness test showed that the depth of hardened layer was $500{\mu}m$. The tensile strength of the ion nitrided SACM645 was lower than that of the unnitrided SACM645, and the ion nitrided specimen was fractured without plastic deformation. The nitrided SACM645 showed much poorer low cycle fatigue properties than the unnitrided one. In rotary bending fatigue, the fatigue strength of the ion nitrided SACM645 was higher than that of the unnitrided specimen, and the fatigue crack initiation sites changed by applied fatigue stress levels. The XRD result showed that the ion nitrided SACM645 has the compressive residual stress from surface to $600{\mu}m$ deep and the tensile residual stress from $600{\mu}m$ to deeper site. It is thought that crack initiation takes place at the point where the total stress of residual stress and applied stress is maximum.

• 한국표면공학회지
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• 제47권5호
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• pp.227-232
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• 2014

In this study, we propose the application of doping process technology for atmospheric pressure plasma. The plasma treatment means the wafer is warmed via resistance heating from current paths. These paths are induced by the surface charge density in the presence of illuminating Argon atmospheric plasmas. Furthermore, it is investigated on the high-concentration doping to a selective partial region in P type solar cell wafer. It is identified that diffusion of impurities is related to the wafer temperature. For the fixed plasma treatment time, plasma currents were set with 40, 70, 120 mA. For the processing time, IR(Infra-Red) images are analyzed via a camera dependent on the temperature of the P type wafer. Phosphorus concentrations are also analyzed through SIMS profiles from doped wafer. According to the analysis for doping process, as applied plasma currents increase, so the doping depth becomes deeper. As the junction depth is deeper, so the surface resistance is to be lowered. In addition, the surface charge density has a tendency inversely proportional to the initial phosphorus concentration. Overall, when the plasma current increases, then it becomes higher temperatures in wafer. It is shown that the diffusion of the impurity is critically dependent on the temperature of wafers.