• 한국재료학회지
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• 제14권5호
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• pp.310-314
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• 2004

Mechanical alloying (MA) of Ti-50.0～66.7at%Si powders was carried out in a high-energy ball mill, and in situ thermal analysis was also made during MA. In order to classify the synthesis behavior of the powders with respect to at%Si, the synthesis behavior during MA was investigated by in situ thermal analysis and X-ray diffraction (XRD). In situ thermal analysis curves and XRD patterns of Ti-50.0～59.6at%Si powders showed that there were exothermic peaks during MA, indicating TiSi, $TiS_2$, and $Ti_{5}$ $Si_4$ phase formation by a rapid exothermic reaction of self-propagating high-temperature synthesis (SHS). Those of Ti-59.8～66.7 at%Si powders, however, showed that there were no peaks during MA, indicating any Ti silicide was not synthesised until MA 240 min. For Ti-50.0～59.6at%Si powders, the critical milling times for SHS increased from 34.5 min to 89.5 min and the temperature rise, $\Delta$T (=peak temperature-onset temperature) decreased form $26.2^{\circ}C$ to $17.1^{\circ}C$ as at%Si increased. The critical composition of Si for SHS reaction was found to be 59.6at% and the critical value of the negative heat of formation of Ti-59.6at%Si to be -1.48 kJ/g.

• 한국환경과학회지
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• 제27권7호
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• pp.611-620
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• 2018

In this study, a metal-organic framework (MOF) material $NH_2$-MIL-101(Fe) was synthesized using the solvothermal method, and characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), UV-visible spectrophotometry, field-emission scanning electron microscopy (FE-SEM), energy dispersive X-ray spectroscopy (EDS), transmission electron microscopy (TEM), and surface area measurements. The XRD pattern of the synthesized $NH_2$-MIL-101(Fe) was similar to the previously reported patterns of MIL-101 type materials, which indicated the successful synthesis of $NH_2$-MIL-101(Fe). The FT-IR spectrum showed the molecular structure and functional groups of the synthesized $NH_2$-MIL-101(Fe). The UV-visible absorbance spectrum indicated that the synthesized material could be activated as a photocatalyst under visible light irradiation. FE-SEM and TEM images showed the formation of hexagonal microspindle structures in the synthesized $NH_2$-MIL-101(Fe). Furthermore, the EDS spectrum indicated that the synthesized material consisted of Fe, N, O, and C elements. The synthesized $NH_2$-MIL-101(Fe) was then employed as an adsorbent and photocatalyst for the removal of Indigo carmine and Rhodamine B from aqueous solutions. The initial 30 min of adsorption for Indigo carmine and Rhodamine B without light irradiation achieved removal efficiencies of 83.6% and 70.7%, respectively. The removal efficiencies thereafter gradually increased with visible light irradiation for 180 min, and the overall removal efficiencies for Indigo carmine and Rhodamine B were 94.2% and 83.5%, respectively. These results indicate that the synthesized MOF material can be effectively applied as an adsorbent and photocatalyst for the removal of dyes.

• 한국해양공학회지
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• 제11권3호
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• pp.56-68
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• 1997

This work was intended to study the effect of a partial pressure ratio and a total pressure of reactive gases on the properties of TiC$_{x}$N$_{1-x}$ . coated layer. In this regard, various TiC$_{x}$N$_{1-x}$ coatings were synthesized with C2112 and N2 Mixture gas of different compositions by Arc Ion Plating process which has been highlighted for an industrial purpose. It was revealed from colors and X-ray diffraction patterns that the concentration of carbon of a TiC$_{x}$N$_{1-x}$ coating increases with a partial pressure ratio (PC$_{2}$H$_{2}$/PN$_{2}$) as well as a total pressure Of $C_{2}$H$_{2}$ and N$_{2}$ mixture gas. Accordingly, the hardness of TiC$_{x}$N$_{1-x}$ coated layer increased but the adhesion to the substrate of SKH 51 was degraded. On the other hand, the deposition rate was independent of a partial pressure ratio and a total pressure of mixture gas. It was found that a uniform gas distribution is critical for an industrial application since the composition of a coating depends strongly on the location of a substrate inside of the furnace. As a result of milling tests with different TiC$_{x}$N$_{1-x}$ coated end mills, the one which has a low carbon concentration was better than others studied in this work.d in this work.

• The Korean Journal of Ceramics
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• 제2권2호
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• pp.102-110
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• 1996

The Mg-PSZ/$Al_2O_3$ fibers were fabricated by the sol-gel method. The added $Al_2O_3$ amounts were varied from 5 to 20 mol%. The phase transformation studies of a drawn Mg-PSZ/$Al_2O_3$ fibers were investigated by use of X-ray diffraction, IR and Raman spectroscopy. Microstructure and tensile strength of fibers were subjected to scanning electron microscopy and tensile strength tester. When $Al_2O_3$ was added to the Mg-PSZ fibers, it was found out from the analysis of XRD patterns and Raman spectra that a small amount of crystalline spinel($MgAl_2O_4$) started to form due to the reaction between $Al_2O_3$ and MgO, at $1000^{\circ}C$, and the phase transformation temperature of $ZrO_2$ crystal phase at different sintering temperatures increased. Also, the rapid grain growth with average size of 2.0 ${\mu}m$ shown in Mg-PSZ fiber at $1500^{\circ}C$ was considerably suppressed to 0.39 ${\mu}m$ by adding $Al_2O_3$ at the same temperature. When the Mg-PSZ/$Al_2O_3$ fibers containing 5 mol% $Al_2O_3$ were sintered $800^{\circ}C$ for 1 hr, average tensile strength of fibers was 0.9 GPs at diameters of 20 to 30 ${\mu}m$, but as the sintering temperatures was increased to $1000^{\circ}C$ for 1 hr, average tensile strength of fibers increased to 1.2 GPa in the same diameter range.

• 한국식품과학회지
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• 제29권6호
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• pp.1309-1315
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• 1997

아밀로오스 함량이 다른 옥수수 전분을 1 N HCl로 산처리하여 약산처리 전분의 특성과 효소저항전분의 수율 및 특성을 비교한 결과 아밀로오스 함량이 증가할수록 산가수분해율은 감소하였고 산처리가 진행됨에 따라 최대흡수파장$({\lambda}_{max})$와 요드친화력이 각각 감소하였다. 산처리 기간에 따른 효소저항전분 수율은 12시간 산처리했을 때까지 모든 시료에서 증가하였으나, 24시간 처리시켰을 때는 오히려 감소하였으며, 찰전분의 수율 증가정도는 12시간 처리시 8배로 다른 전분에 비해 높은 증가를 나타내었다. 약산처리된 효소저항전분 생성전분의 형태는 그물망과 같은 형태를 보였으며, 분리된 효소저항전분은 작은 알갱이와 막대모양의 입자를 관찰할 수 있었다. 효소저항전분 생성전분의 X-선 회절도는 Amioca의 경우 무정형이었으며, 다른 전분은 $20{\theta}=17^{\circ}$, $20^{\circ}$, $23^{\circ}$, 근처의 피크가 나타났고, 분리된 효소저항전분은 형성전분과는 다른 경향을 보여 완전한 결정구조를 나타내었다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권5호
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• pp.226-231
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• 2001

The $Mg_{1-x}Sr_xTiO_3\;(x=0.02{\sim}0.08)$ ceramics were fabricated by the conventional mixed oxide method. The sintering temperature and time were $1250^{\circ}C{\sim}1350^{\circ}C$, 2hr., respectively. From the X-ray diffraction patterns, it was found that the perovskite $SrTiO_3$ and ilmenite $MgTiO_3$ structures were coexisted in the $Mg_{1-x}Sr_xTiO_3\;(x=0.02{\sim}0.08)$ ceramics. The dielectric constant( ${\epsilon}_r$) was increased with addition of $SrTiO_3$. The temperature coefficient of resonant frequency( ${\tau}_f$) was gradually varied from negative value to the positive value with increasing the $SrTiO_3$. The temperature coefficient of resonant frequency of the $Mg_{1-x}Sr_xTiO_3(x=0.036)$ ceramics was near zero, where the dielectric constant, quality factor, and ${\tau}_f$ were 20.65, 95120 and +1.3ppm/$^{\circ}C$, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.547-550
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• 2000

The (1-x)MgTiO$_3$-xSrTiO$_3$(x=0.03~0.04) ceramics were fabricated by the conventional mixed oxide method. The sintering temperature and time were 125$0^{\circ}C$~135$0^{\circ}C$, 2hr., respectively. From the X-ray diffraction patterns, it was found that the perovskite SrTiO$_3$ and ilmenite MgTiO$_3$ structures coexisted in the (1-x)MgTiO$_3$-xSrTiO$_3$(x=0.03~0.04) ceramics. The dielectric constant($\varepsilon$$_{r}$) was increased with addition of SrTiO$_3$. The temperature coefficient of resonant frequency($\tau$$_{f}$) was gradually varied from negative value to the positive value with increasing the SrTiO$_3$. The negative temperature coefficient of resonant frequency of the magnesium titanate was adjusted to near zero at x=0.036, where the dielectric constant, quality factor, and $\tau$$_{f}$ were 20.65, 95120, and +1.3ppm/$^{\circ}C$, respectively. The temperature stability of qualify factor in (1-x)MgTiO$_3$-xSrTiO$_3$(x=0.03~0.04) ceramics increased as the amount of MgTiO$_3$./TEX>.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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• pp.1850-1852
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• 2005

$SrTiO_3$ and $BaTiO_3$ sol-liquids and powders were prepared by the sol-gel method. $SrTiO_3/BaTiO_3$ heterolayered thin/thick films have been prepared on the $Al_2O_3$ substrates by screen printing and spin-coating method. The thin films were sintered at $750^{\circ}C$ in the air for 1 hour and the thick films sintered at $1325^{\circ}C$ in the air for 2 hours, respectively. The $SrTiO_3/BaTiO_3$ thin/thick films's structural and dielectric properties were investigated. Increasing the spin-coating times, (110), (200), (211) peaks of the $SrTiO_3$ were increased. The X-ray diffraction(XRD) patterns and SEM photographs indicated that the $SrTiO_3$ phase were formed in the surface of $BaTiO_3$ thick films. The average thickness of a $BaTiO_3$ thick films and $SrTiO_3$ thin films were $50{\mu}m$ and 400nm, respectively The dielectric constant and dielectric loss of the $SrTiO_3/BaTiO_3$ thin/thick films with $SrTiO_3$ coated 5 times were 1598 and 0.0436 at 10KHz.

• 한국전기전자재료학회논문지
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• 제29권6호
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• pp.337-341
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• 2016

In this study, $ Ni_{0.79}(Mn_{2.21-x}Cu_x)O_4$ (x=0~0.25) specimens were prepared by using a conventional mixed oxide method. All specimens were sintered in air at $1,200^{\circ}C$ for 12 h and cooled at a rate of $2^{\circ}C/min$ to $800^{\circ}C$, subsequently quenching to room temperature. We investigated the structural and electrical properties of $ Ni_{0.79}(Mn_{2.21-x}Cu_x)O_4$ specimens with variation of CuO amount for the application of NTC thermistors. As results of X-ray diffraction patterns, all specimens showed the formation of a complete solid solution with cubic spinel phase. The relationship between ln ${\rho}$ and the reciprocal of absolute temperature(1/T) for the NTC thermistors was shown linearity, which exhibited the typical NTC thermistor properties. With increasing the amount of CuO, resistivity at room temperature, B-value, and temperature coefficient resistance decreased.

• 한국전기전자재료학회논문지
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• 제21권11호
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• pp.968-972
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• 2008

Ni/Ti/Al multilayer system ('/'denotes the deposition sequence) was tested for low-resistance ohmic contact formation to Al-implanted p-type 4H-SiC. Ni 30 nm / Ti 50 nm / Al 300 nm layers were sequentially deposited by e-beam evaporation on the 4H-SiC samples which were implanted with Al (norminal doping concentration = $4\times10^{19}cm^{-3}$) and then annealed at $1700^{\circ}C$ for dopant activation. Rapid thermal anneal (RTA) temperature for ohmic contact formation was varied in the range of $840\sim930^{\circ}C$. Specific contact resistances were extracted from the measured current vs. voltage (I-V) data of linear- and circular transfer length method (TLM) patterns. In constrast to Ni contact, Ni/Ti/Al contact shows perfectly linear I-V characteristics, and possesses much lower contact resistance of about $2\sim3\times10^{-4}\Omega{\cdot}cm^2$ even after low-temperature RTA at $840^{\circ}C$, which is about 2 orders of magnitude smaller than that of Ni contact. Therefore, it was shown that RTA temperature for ohmic contact formation can be lowered to at least $840^{\circ}C$ without significant compromise of contact resistance. X-ray diffraction (XRD) analysis indicated the existence of intermetallic compounds of Ni and Al as well as $NiSi_{1-x}$, but characteristic peaks of $Ti_{3}SiC_2$, a probable narrow-gap interfacial alloy responsible for low-resistance Ti/Al ohmic contact formation, were not detected. Therefore, Al in-diffusion into SiC surface region is considered to be the dominant mechanism of improvement in conduction behavior of Ni/Ti/Al contact.