• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제51권5호
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• pp.185-190
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• 2002

Capacitor material utilized in the downsizing passive devices and dynamic random access memory(DRAM) requires the physical and electrical properties at given area such as capacitor thickness reduction, relative dielectric constant increase, low leakage current and thermal stability. Common capacitor materials, $SiO_2$, $Si_3N_4$, $SiO_2$/$Si_3N_4$,TaN and et al., used until recently have reached their physical limits in their application to several hundred angstrom scale capacitor. $Ta_2O_{5}$ is known to be a good alternative to the existing materials for the capacitor application because of its high dielectric constant (25 ~35), low leakage current and high breakdown strength. Despite the numerous investigations of $Ta_2O_{5}$ material, there have little been established the clear understanding of the annealing effect on capacitance characteristic and conduction mechanism, design and fabrication for $Ta_2O_{5}$ film capacitor. This study presents the structure-property relationship of reactive-sputtered $Ta_2O_{5}$ MIM capacitor structure processed by annealing in a vacuum. X-ray diffraction patterns skewed the existence of amorphous phase in as-deposited condition and the formation of preferentially oriented-$Ta_2O_{5}$ in 670, $700^{\circ}C$ annealing. On 670, $700^{\circ}C$ annealing under the vacuum, the leakage current decrease and the enhanced temperature-capacitance characteristic stability. and the leakage current behavior is stable irrespective of applied electric field. The results states that keeping $Ta_2O_{5}$ annealed at vacuum gives rise to improvement of electrical characteristics in the capacitor by reducing oxygen-vacancy and the broken bond between Ta and O.

• Bulletin of the Korean Chemical Society
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• 제26권1호
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• pp.103-106
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• 2005

In order to investigate the catalytic mechanism for the growth of carbon nanotubes (CNTs), a comprehensive study was conducted using carbon materials synthesized at 680 ${^{\circ}C}$ with a gas mixture of CO-H$_2$ after reduction at 800 ${^{\circ}C}$ by H$_2$ gas from iron oxide, and metal Pt. The resulting material was observed by scanning electron microscopy (SEM) and X-ray diffraction patterns (XRD) after a variety of reaction times. The carbon materials synthesized by metal Pt were little affected by reaction time and the sintered particles did not form CNTs. Xray analysis revealed that metal Fe was completely converted to iron carbide (Fe$_3$C) without Fe peaks in the early stage. After 5 min, iron carbide (Fe$_3$C) and carbon (C) phases were observed at the beginning of CNTs growth. It was found that the intensity of the carbon(C) peak gradually increased with the continuous growth of CNTs as reaction time increases. It was also found that the catalyst of growth of CNTs was metal carbide.

• 한국자기학회지
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• 제7권1호
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• pp.7-12
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• 1997

회전형 볼밀을 이용하여 Ar 분위기에서 기계적 합금화 방법으로 Fe$_{50}$Zr$_{50}$ 비정질을 제조하고 이들의 구조 및 자기적 성질을 투과전자현미경과 SQUID 자력계를 이용하여 조사하였다. 기계적합금화법으로 제조된 분말로 부터 얻은 제한시야 회절도형은 두개의 인접한 halo ring 도형을 나타내며, 이것은 비정질이 Fe rich 한 비정질과 Zr rich 한 두 비정질로이 공존하기 때문이다. 기계적 합금화한 Fe$_{50}$Zr$_{50}$ 비정질 분말에서 비정질상의 큐리온도로 부터 추정된 강자성 Fe-Zr계 비정지상의 Fe 조성은 100시간 합금화한 경우 65 at% 로서, 이것은 비정질의 상분리가 일어났기 때문이며, 이 결과는 회절도형의 분석결과와 일치한다. 기계적 합금화한 Fe$_{50}$Zr$_{50}$ 분말의 스핀파 탄성계수는 100시간 합금화한 경우에는 52.2 meV .angs. 이고, 200시간 합금화 한 경우에는 63.8 meV .angs. 으로 합금화시간이 증가함에 따라 증가하였다. 이것으 200시간 합금화한 경우 부분 결정화에 의하여 .alpha. -Fe가 일부 석출하였기 때문이다.

• 한국자기학회지
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• 제6권2호
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• pp.73-79
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• 1996

Y형 육방정 산화철$(Ba_{2}Me_{2}Fe_{12}O_{22}:Me=천이금속)$은 천이 금속으로 Co와 Zn가 포함된 경우 양호한 고주파 특성을 보이는 것으로 알려져 있다. 따라서, 결정 구조 내에 이들의 분포 상태를 파악하는 것이 중요하다. 본 논문에서는 엄밀한 성분 분석, X-선 회절 분석, 자기 특성 분석을 통하여 확인된 $Co_{2}Y$와 $Co_{1.6}Zn_{0.4}Y$시료에 대한 $M\"{o}ssbauer$ 분광 분석 결과로부터 다음과 같은 결론을 제시하였다. (1) Co는 주로 육방정 산화철의 S-block에 위치한 4배위 자리 $(6c_{IV})$와 S-, T-block 경계의 6배위자리(18h VI)에 들어간다. (2) Co의 일부를 Zn으로 치환하여도, Fe의 분포에는 큰 영향을 미치지 않는다.

• 한국자기학회지
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• 제17권6호
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• pp.238-241
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• 2007

복합 전파흡수체로 사용할 Ni-Cu-Zn ferrite는 공침법을 사용하여 제조 하였고,제조 시편의 물리적 특성 및 전파흡수특성은 소결온도 변화에 따라 고찰하였다. Ni-Cu-Zn ferrite의 스피넬 구조는 XRD pattern을 통하며 확인하였다. 소결온도가 $1100^{\circ}C$에서 흡수 능력도 좋아짐을 알 수 있었으며, 소결된 페라이트의 초투자율은 평균 50 정도로 나타났다. $Ni_{0.7}Cu_{0.2}Zn_{0.1}Fe_2O_4$ 조성에서 소결 온도가 $1100^{\circ}C$ 일 때가 복합 전파흡수체로 사용할 조성임을 확인할 수 있었으며, 그 결과 복합 전파흡수체에서 사용할 수 있다고 사료된다.

• 자연과학논문집
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• 제14권2호
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• pp.41-54
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• 2004

$LaMnO_3$(a=$5.51\AA$, c=$13.33\AA$) 페로브스카이트형 복합산화물에서 A site인 La자리에 Sr을 치환시킨 $La_{0.9}Sr_{0.1}MnO_3$(a=$5.33\AA$, c=$13.27\AA$)와 B site인 Mn을 Cu로 치환시킨 $LaMn_{0.9}Cu_{0.1}O_3$(a=$5.52\AA$, c=$13.31\AA$) 복합산화물을 Citrate sol-gel법을 이용하여 합성하였으며 분말 X-ray회절 분석기(XRD)을 이용하여 Rhombohedral의 페로브스카이트 구조임을 확인하였다. 수소 환원분위기에서의 TRR결과에 의하면 이들 산화물의 산소 화학양론은 $LaMnO_{3.16}$, $La_{0.9}Sr_{0.1}MnO_{3.10}$, $LaMn_{0.9}Cu_{0.1}O_{3.14}$의 조성을 갖는다. $LaMnO_3$는 2단계 환원반응을 일으키지만 각 자리를 치환시킨 $LaMnO_3$ 복합산화물은 3단계 환원반응을 일으켰다.

• 한국식품과학회지
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• 제31권6호
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• pp.1410-1414
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• 1999

Durian 종자 전분의 입자크기범위는 약 $2.0-10.0\;{\mu}m$ 이었으며 구형과 다각형의 형태를 갖고 있었다. Durian종자, 옥수수, 고구마, 감자전분의 아밀로오스 함량은 28.3%, 27.5%, 20.3% 및 21.7%이었다. Durian 종자, 옥수수, 고구마, 감자전분의 blue value는 0.370, 0.368, 0.332 및 0.338이었으며, 알칼리도는 7.39, 9.02, 7.08 및 5.43이었다. Durian 종자 전분의 팽윤력과 용해도는 감자전분보다 낮았다. Durian 종자자전분의 X-선 회절도에 의한 결정성은 곡류전분과 같은 A형이었다. RVA로 측정한 durian 종자 전분의 호화개시온도 $(76.6^{circ}C)$는 옥수수$(73.0^{circ}C)$, 고구마$(72.3^{circ}C)$, 감자전분 $(70.2^{circ}C)$보다 높았으며 breakdown은 낮은 반면 setback은 높았다.

• 한국재료학회지
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• 제26권3호
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• pp.143-148
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• 2016

$CaAl_2O_4:RE^{3+}$(RE = Tb or Dy) phosphor powders were synthesized with different contents of activator ions $Tb^{3+}$ and $Dy^{3+}$ by using the solid-state reaction method. The effects of the content of activator ions on the crystal structure, morphology, and emission and excitation properties of the resulting phosphor particles were investigated. XRD patterns showed that all the synthesized phosphors had a monoclinic system with a main (220) diffraction peak, irrespective of the content and type of $Tb^{3+}$ and $Dy^{3+}$ ions. For the $Tb^{3+}$-doped $CaAl_2O_4$ phosphor powders, the excitation spectra consisted of one broad band centered at 271 nm in the range of 220-320 nm and several weak peaks; the main emission band showed a strong green band at 552 nm that originated from the $^5D_4{\rightarrow}^7F_5$ transition of $Tb^{3+}$ ions. For the $Dy^{3+}$-doped $CaAl_2O_4$ phosphor, the emission spectra under ultraviolet excitation at 298 nm exhibited one strong yellow band centered at 581 nm and two weak bands at 488 and 672 nm. Concentration-dependent quenching was observed at 0.05 mol of $Tb^{3+}$ and $Dy^{3+}$ contents in the $CaAl_2O_4$ host lattice.

• 한국재료학회지
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• 제14권5호
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• pp.305-309
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• 2004

Mechanical alloying (MA) of Ti-25.0～37.5at%Si powders was carried out in a high-energy ball mill, and in situ thermal analysis was also made during MA. In order to classify the synthesis behavior of the powders with respect to at%Si, the synthesis behavior during MA was investigated by in situ thermal analysis and X-ray diffraction (XRD). In situ thermal analysis curves and XRD patterns of Ti-25.0～26.1at%Si powders showed that there were no peaks during MA, indicating $Ti_{5}$ $Si_3$ was synthesised by a slow reaction of solid state diffusion. Those of Ti-27.1～37.5at%Si powders, however, showed that there were exothermic peaks during MA, indicating $_Ti{5}$ $Si_3$ and$ Ti_3$Si phase formation by a rapid exothermic reaction of self-propagating high-temperature synthesis (SHS). For Ti-27.1～37.5at%Si powders, the critical milling times for SHS decreased from 38.1 to 18.5 min and the temperature rise, ΔT (= peak temperature - onset temperature) increased form $19.5^{\circ}C$ to $26.7^{\circ}C$ as at%Si increased. The critical composition of Si for SHS reaction was found to be 27.1at% and the critical value of the negative heat of formation of Ti-27.1at%Si to be -1.32 kJ/g.

• 한국재료학회지
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• 제12권1호
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• pp.36-43
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• 2002

In this study, the nanosized ZnS thin films that can be used for fabrication of blue light-emitting diodes, electro-optic modulators, and n-window layers of solar cells were grown by the solution growth technique (SGT), and their surface morphology and film thickness and grain size dependence on the growth conditions were examined. Based on these results, the quantum size effects of ZnS were systematically investigated. Governing factors related to the growth condition were the concentration of precursor solution, growth temperature, concentration of aq. ammonia, and growth duration. X-ray diffraction patterns showed that the ZnS thin film obtained in this study had the cubic structure ($\beta$-ZnS). With decreasing growth temperature and decreasing concentration of precursor solution, the surface morphology of film was found to be improved. Also, the film thickness depends largely on the ammonia concentration. In particular, this is the first time that the surface morphology dependence of ZnS film grown by SGT on the ammonia concentration is reported. The energy band gaps of samples were determined from the optical transmittance values, and were shown to vary from 3.69 eV to 3.91 eV. These values were substantially higher than 3.65 eV of bulk ZnS. It was also shown that the quantum size effect of SGT grown ZnS is larger than that of the ZnS films grown by most other growth techniques.